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Cleaning Compositions For Solid Surfaces, Auxiliary Compositions Therefor, Or Processes Of Preparing The Compositions > Cleaning Compositions Or Processes Of Preparing (e.g., Sodium Bisulfate Component, Etc.) > For Cleaning A Specific Substrate Or Removing A Specific Contaminant (e.g., For Smoker`s Pipe, Etc.) > For Printed Or Integrated Electrical Circuit, Or Semiconductor Device > For Stripping Photoresist Material For Stripping Photoresist MaterialFor Stripping Photoresist Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/30/06 - 20060270575 - Cleaning solution and cleaning method of a semiconductor device A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the ... 11/30/06 - 20060270574 - Photoresist stripping agent The photoresist stripping agent of the present invention contains a reaction product that is produced by the reaction of formaldehyde and an alkanol amine in a molar ratio of 0.8 or less. The photoresist stripping agent easily removes, at low temperatures in a short period of time, photoresist layers applied ... 03/23/06 - 20060063688 - Photoresist stripping solution and method of treating substrate with the same Disclosed is a photoresist stripping solution comprising: (a) a salt of hydrofluoric acid with a base free from metallic ions; and (b) a water-soluble organic solvent, wherein the content of the component (a) is 0.001 to 0.1 mass % based on the total mass of the photoresist stripping solution. Also ... 01/05/06 - 20060003910 - Composition and method comprising same for removing residue from a substrate wherein X, Y, and Z are each independently selected from C, N, O, S, and P; R1, R2, R3, R4, R5, and R6 are each independently an alkyl group having a formula CnH2n+1; R7 is one selected from H, —OH, —COOH, and —NH2; and R8 is selected from an alkyl ... 11/10/05 - 20050250660 - Photoresist stripper (Problem) Recently, use is made of copper wiring as the wiring material for semiconductor devices, and of low dielectric constant films as the insulating film between the lines of wiring. In this connection, a photoresist stripper is in need which can inhibit corrosion or damage on the copper wiring or ... 10/27/05 - 20050239673 - Microelectronic cleaning compositions containing oxidizers and organic solvents Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k dielectrics and copper or aluminum metallizations contain an oxidizing agent and a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols, and optionally other components. ... 08/11/05 - 20050176607 - Thinner composition and method of removing photoresist using the same A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof. ... ### FreshPatents.com Support |