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Cleaning Compositions For Solid Surfaces, Auxiliary Compositions Therefor, Or Processes Of Preparing The Compositions > Cleaning Compositions Or Processes Of Preparing (e.g., Sodium Bisulfate Component, Etc.) > For Cleaning A Specific Substrate Or Removing A Specific Contaminant (e.g., For Smoker`s Pipe, Etc.) > For Printed Or Integrated Electrical Circuit, Or Semiconductor Device For Printed Or Integrated Electrical Circuit, Or Semiconductor DeviceFor Printed Or Integrated Electrical Circuit, Or Semiconductor Device patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/15/07 - 20070037719 - Polymer-stripping composition Compositions useful for removing a polymer material from a substrate, such as an electronic device, and methods of using such compositions are provided. These compositions and methods reduce the corrosion of any underlying metal surfaces, and are particularly suited to remove polymer residues from electronic device substrates. ... 02/08/07 - 20070032394 - Stabilisation of trans-1,2-dichloroethylene The present invention relates to the stabilization of trans-1,2-dichloroethylene (TDCE) for the purpose of its use in the treatment of solid surfaces. The stabilized solution comprises at least one acid acceptor, at least one radical scavenger, at least one Lewis base and at least one compound possessing a buffering effect. ... 02/01/07 - 20070027052 - Cleaning liquid used in photolithography and a method for treating substrate therewith It is disclosed a cleaning liquid for stripping and disssolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide ... 01/11/07 - 20070010412 - Process solutions containing surfactants Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after ... 01/11/07 - 20070010411 - Cleaning agent composition, cleaning and production methods for semiconductor wafer, and semiconductor wafer A cleaning agent composition comprising a nonionic surfactant represented by the following formula (1): R1O(EO)x(PO)yH (I)(wherein R1 represents a linear or branched alkyl group having from 6 to 20 carbon atoms or a linear or branched alkenyl group having from 6 to 20 carbon atoms, EO represents an oxyethylene group, ... 12/28/06 - 20060293199 - Removing agent composition and removing/cleaning method using same The present invention relates to a removal cleaning method for a semiconductor substrate or a semiconductor device with metal wirings by using a remover composition, wherein the remover composition contains a dissolution agent having an alumina dissolution amount as measured according to the standard test (A-1) of 10 ppm or ... 12/21/06 - 20060287208 - Methods of forming corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration ... 12/21/06 - 20060287207 - Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group. ... 11/30/06 - 20060270573 - Cleaning solution for substrate for semiconductor device and cleaning method To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, ... 11/02/06 - 20060247142 - Composition and method for treating a semiconductor substrate The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less or no metal precipitation on the semiconductor ... 10/19/06 - 20060234888 - Acidic chemistry for post-cmp cleaning This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the ... 10/05/06 - 20060223732 - Cleaning agent for removing solder flux and method for cleaning solder flux The present invention provides a cleaning agent for removing the solder flux and method for cleaning the solder flux which exhibit the excellent cleaning property even at the time of cleaning a lead-free soldering flux, a high-melting-point solder flux or the like and, at the same time, exhibits the excellent ... 09/28/06 - 20060217279 - Surface treatment compositions for foaming process The object of the invention is to provide a non-aqueous fluorine containing surface treatment composition and treated textile. The surface treatment composition can be made into foam for low energy application and to control depth or penetration of surface treatment. Surface treatment can be applied by current commercially available foam ... 09/28/06 - 20060217278 - Composition and method for removing copper-compatible resist A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor. ... 09/28/06 - 20060217277 - Compositions based on fluorinated hydrocarbons and secondary butanol for defluxing electronic boards The present invention concerns the field of fluorinated hydrocarbons and relates to novel compositions containing fluorinated hydrocarbons, secondary butanol and optionally DMSO. These novel compositions are particularly advantageous for defluxing electronic boards in particular for defluxing electronic boards containing “no clean” solder fluxes. ... 09/14/06 - 20060205623 - Composition for photoresist stripping solution and process of photoresist stripping The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of ... 09/07/06 - 20060199749 - Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, ... 08/24/06 - 20060189496 - Method for stripping cured paint with synthetic surfactants low in volatile organic compounds A method of stripping cured paint from plastic, aluminum, brass, magnesium, galvanized steel, zinc die cast, and non-ferrous metal substrates, said method comprising: a) adding a stripping composition to a strip tank, consisting of a mixture of, not limited to, two synthetic detergent surface active agents, referenced in this invention ... 08/10/06 - 20060178282 - Process for production of etching or cleaning fluids A method for producing an etching or cleaning solution comprising (1) at least one member selected from the group consisting of fluoride salts and bifluoride salts formed from at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums and aromatic quaternary ... 08/03/06 - 20060172907 - Microelectronic cleaning agent(s) and method(s) of fabricating semiconductor device(s) using the same According to an example embodiment of the present invention, the microelectronic cleaning agent may include a fluoride component, an acid component, a chelating agent, a surfactant and water. Example embodiments of the present invention provide a microelectronic cleaning agent which can selectively remove, for example, a high-k dielectric layer. The ... 08/03/06 - 20060172906 - Aqueous based residue removers comprising fluoride A composition and method comprising same for selectively removing residues such as, for example, ashed photoresist and/or processing residues are disclosed herein. In one aspect, there is provided a composition for removing residue wherein the composition has a pH ranging from about 2 to about 9 comprising: a buffer solution ... 08/03/06 - 20060172905 - Aqueous based residue removers comprising fluoride A composition and method comprising same for selectively removing residues such as, for example, ashed photoresist and/or processing residues are disclosed herein. In one aspect, there is provided a composition for removing residue wherein the composition has a pH ranging from about 2 to about 9 comprising: a buffer solution ... 07/27/06 - 20060166847 - Compositions for processing of semiconductor substrates Compositions useful in semiconductor manufacturing for surface preparation and/or cleaning of wafer substrates such as semiconductor device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, ... 07/27/06 - 20060166846 - Remover solution A cleaning (stripping) solution comprises a mixture of a first compound, a second compound and water. The cleaning solution can effectively remove metal oxides without damaging the surface of the metal materials. The cleaning solution can successfully remove both organic and inorganic residues. ... 07/13/06 - 20060154839 - Stripping and cleaning compositions for microelectronics Aqueous, silicate free, cleaning compositions of about pH 9 or below and method of using the cleaning compositions for cleaning microelectronic substrates, which compositions are able to essentially completely clean such substrates and produce essentially no metal corrosion of the metal elements of such substrates. The aqueous cleaning compositions of ... 07/13/06 - 20060154838 - Cleaning composition and method of cleaning therewith (wherein, Y1 and Y2 are lower alkylene groups, n is an integer of 0 to 4, at least 4 of R1 to R4 and n R5s are alkyl groups having phosphonic acid group(s) and the rest are alkyl groups) and a cleaning method using the same. The present invention provides ... 07/13/06 - 20060154837 - Technique on ozone water for use in cleaning semiconductor substrate An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a ... 07/06/06 - 20060148666 - Aqueous cleaner with low metal etch rate A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post etch, post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of ... 06/22/06 - 20060135386 - Chemical composition for a fire retardant textile The present invention relates to methods and chemical compositions utilizing NPB (n-propyl bromide) also called 1-bromopropane or propyl bromide or 1-BP or N-Bromopropane as non-aqueous carrier mediums to apply fire retardants, fluorocarbons and other chemicals to substrates, whereby the NPB is evaporated away leaving the remaining chemicals on the substrate. ... 06/08/06 - 20060122085 - Compositions and methods for high-efficiency cleaning of semiconductor wafers A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom. ... 06/08/06 - 20060122084 - Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. ... 06/08/06 - 20060122083 - Remover composition A remover composition used for cleaning of a semiconductor substrate or semiconductor element, wherein (1) the remover composition contains 65% by weight or more of water; (2) the remover composition has a pH at 20° C. of 2 or more and 6 or less; and (3) the remover composition contains ... 05/11/06 - 20060100116 - Photo resist stripper composition A photo resist stripper composition includes PGME or its derivatives and ANONE or its derivatives characterized by low toxicity, safe use, free of odors, environment friendly, easy disposal of waste liquid and wastewater; good solution to photo resist material film, proper volatility, excellent stripping capability, good compatibility among different types ... 05/04/06 - 20060094614 - Non-corrosive cleaning composition for removing plasma etching residues A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a ... 05/04/06 - 20060094613 - Compositions and processes for photoresist stripping and residue removal in wafer level packaging Improved compositions and processes for removing photoresists, polymers, post etch residues, and post oxygen ashing residues from interconnect, wafer level packaging, and printed circuit board substrates are disclosed. One process comprises contacting such substrates with mixtures containing an effective amount of organic ammonium compound(s); from about 2 to about 20 ... 05/04/06 - 20060094612 - Post etch cleaning composition for use with substrates having aluminum A composition used for removing a photoresist, polymeric material, or residue from a substrate contains a corrosion inhibitor that is a derivative of gallic acid that is soluble in water-miscible organic solvents, water, at least one organic amine, and two or more water-miscible organic solvents. The composition may further contain ... 04/27/06 - 20060089280 - Semiconductor cleaning solution The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula (1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group ... 04/06/06 - 20060073998 - Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning ... 04/06/06 - 20060073997 - Solutions for cleaning silicon semiconductors or silicon oxides A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an α,α-dihydroxyphenol, a carboxylic acid, a ... 03/23/06 - 20060063687 - Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate An aqueous-based composition and process for removing photoresist and/or bottom anti-reflective coating (BARC) material from a substrate having such material(s) thereon. The aqueous-based composition includes a quaternary ammonium base, at least one co-solvent, and optionally a chelator. The composition achieves high-efficiency removal of photoresist and/or BARC material in the manufacture ... 03/02/06 - 20060046944 - Composition for removing a photoresist residue and polymer residue, and residue removal process using same A composition for removing a photoresist residue and polymer residue to remove a photoresist residue and an ashing residue remaining after dry etching and after ashing of a semiconductor substrate having metal wiring formed from aluminum or an aluminum alloy is provided, the composition containing at least one type of ... 02/23/06 - 20060040840 - Supercritical carbon dioxide/chemical formulation for removal of photoresists A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. ... 02/23/06 - 20060040839 - Cleaning composition and method Cleaning compositions composed of specific amounts of carbonic acid and/or carbonate, hydrogen peroxide, aluminum fluoride and water are highly effective for cleaning electronic devices of resist, resist residues, titanium dioxide, aluminum oxide and silicon dioxide. The compositions contain no hydroxylamine and are thus free of its hazards. ... 02/23/06 - 20060040838 - Cleaning liquid and cleaning method A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than ... 02/16/06 - 20060035798 - Non-aqueous water and oil repellent compositions for a durable hydrophobic textile The object of the invention is to provide a fluorine-containing non-aqueous surface treatment composition for application by current commercially available equipment that has, excellent performance, a long shelf life, reduced energy consumption, very little to no ozone layer depletion and global warming. and is highly safe due to the non-flammability ... 02/16/06 - 20060035797 - Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process ... 02/09/06 - 20060030503 - Slurry for cmp, polishing method and method of manufacturing semiconductor device Disclosed is a CMP slurry comprising an abrasive grain, and a mixed surfactant comprising a first polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature, and a second polyether type nonionic surfactant having an HLB value ranging from 10 to 20 at room ... 02/09/06 - 20060030502 - Solution for removing magnesium chloride compound from a surface contaminated therewith A solution containing approximately 40-60% by weight phosphoric acid, approximately 1-6% by weight a surfactant, approximately 0.5-5% by weight an inhibitor, and the remaining percentage by weight made up of water for removing magnesium chloride from certain materials, namely aluminum, aluminum alloys, steel, rebar, chrome, plastics, ceramics, rubber, including insulation ... 02/02/06 - 20060025320 - Seminconductor surface treatment and mixture used therein The present invention relates to a surface treatment composition and a method for treating the surface of a substrate using the same. More particularly, the present invention relates to a surface treatment composition comprising a liquid medium as a main component, which prevents a substrate surface from being contaminated with ... 01/26/06 - 20060019850 - Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations A cleaning composition for cleaning particulate contamination from small dimensions on microelectronic device substrates. The cleaning composition contains dense CO2 (preferably supercritical CO2 (SCCO2)), alcohol, fluoride source, anionic surfactant source, non-ionic surfactant source, and optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, ... 01/26/06 - 20060019849 - Systems and methods for charging a cleaning solution used for cleaning integrated circuit substrates The cleaning compositions of the present invention include: a solvent; and a solute selected to promote cleaning of the IC substrate, wherein at least a portion of the solute is present in cluster form in the solution and the solute and solvent are present in a volumetric ratio that is ... 01/19/06 - 20060014657 - Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related to a method for polishing copper integrated with tungsten containing barrier layers by means of an aqueous solution containing ... 01/19/06 - 20060014656 - Composition for stripping and cleaning and use thereof A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor ... 01/05/06 - 20060003909 - Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity ... 12/29/05 - 20050288199 - Composition for removing photoresist residue and polymer residue A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, ... 12/22/05 - 20050282718 - Rinsing composition, and method for rinsing and manufacturing silicon wafer A rinsing composition contains at least one water-soluble polymer selected from a water-soluble polysaccharide, polyvinyl alcohol, polyethylene oxide, polypropylene oxide, a copolymer of ethylene oxide and propylene oxide, and a hydrophilic polymer obtained by adding an alkyl group or an alkylene group to the copolymer. The rinsing composition can be ... 12/08/05 - 20050272621 - Composition and method for removing copper-compatible resist A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent. ... 12/01/05 - 20050267004 - Composition and method for surface treatment of oxidized metal The present invention provides an electrically conductive element for a proton exchange membrane fuel cell having low electrical contact resistance and high corrosion resistance. The conductive element comprises a corrosion susceptible metal substrate with a surface, which is preferably treated to activate the surface (i.e. to remove a passivation layer ... 11/24/05 - 20050261151 - Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration ... 11/24/05 - 20050261150 - Reactive fluid systems for removing deposition materials and methods for using same The present invention generally relates to methods for processing materials. More particularly, the present invention relates to reactive fluids and uses thereof for removing deposition materials, including, but not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial ... 11/03/05 - 20050245410 - Water soluble nonionic alkylene oxide resin, and production process therefor The residual amount of a solvent in a water soluble nonionic alkylene oxide resin is decreased in an apparatus including an evaporation vessel and a stirring blade which scrapes-up and coats resin solution onto the inner wall surface of the evaporation vessel. A water soluble nonionic alkylene oxide resin having ... 11/03/05 - 20050245409 - Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing A novel cleaning composition used for post-etch resist residue removal is disclosed. In contrast to the conventional cleaning solutions based on fluoride chemistries, the present invention can significantly reduce the oxide loss resulting from the exfoliation, while still providing an excellent cleaning efficiency. ... 10/27/05 - 20050239672 - Cleaning solution of silicon germanium layer and cleaning method using the same Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a ... 10/20/05 - 20050233922 - Cleaning solution and method of cleaning semiconductor devices using the same A cleaning solution for preventing the collapse of photoresist patterns and a method of cleaning a semiconductor device using the cleaning solution; the cleaning solution includes a solvent and a surfactant and has a dynamic surface tension of about 50 dyne/cm or less at about 6 bubbles/seconds when measured by ... 10/20/05 - 20050233921 - Cleaning solution for photoresist, method for forming a photoresist pattern using the same, and semiconductor device R and R′ are independently H, C1-C40 alkyl or C1-C40 alkyl aryl; l and n are independently integers ranging from 1 to 500; m is an integer ranging from 0 to 10; and the weight average molecular weight ranges from 100 to 50,000. ... 10/13/05 - 20050227888 - Cleaning method and solution for cleaning a wafer in a single wafer process The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution ... 09/29/05 - 20050215446 - Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, ... 09/29/05 - 20050215445 - Methods for residue removal and corrosion prevention in a post-metal etch process A method of plasma assisted CO2 cleaning for dry removal of residual photoresist and sidewall polymer with an etch gas mixture comprising fluorine containing gas, oxygen and hydrogen in N2 or H2O. The process removes polymer residues present on a metal layer on a substrate and on the sidewalls of ... 09/22/05 - 20050209119 - Etching liquid composition The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block ... 09/22/05 - 20050209118 - Photoresist residue remover composition and semiconductor circuit element production process employing the same A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, ... 09/22/05 - 20050209117 - Complexing agent for treating metallic and plastic surfaces where this structural unit may be part of a polymer main chain or may be bound to a polymer main chain via an anchor group, and M is hydrogen or an ammonium or metal cation; b) water or another solvent which is suitable for dissolving, dispersing, suspending or emulsifying the ... 09/15/05 - 20050202987 - Compositions for cleaning organic and plasma etched residues for semiconductor devices A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of ... 09/08/05 - 20050197266 - Acidic chemistry for post-cmp cleaning This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the ... 09/08/05 - 20050197265 - Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an ... 09/01/05 - 20050192193 - Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a surface passivator, a binder, deionized water, and optionally a surfactant. The SCF-based compositions ... 08/25/05 - 20050187118 - Cleaning solution, method for cleaning semiconductor substrate using the same, and method for forming metal wiring The stripping-cleaning solution can advantageously strip a deposit generated on the top surface of a wiring without excessively etching the metal layer which constitutes the sidewall of the metal wiring pattern and the top surface of the wiring. The stripping-cleaning solution comprises at least a fluorine compound, a water-soluble organic ... 08/18/05 - 20050181961 - Alkaline chemistry for post-cmp cleaning This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the ... 08/11/05 - 20050176606 - Cleaning composition, method for cleaning semiconductor substrate, and process for manufacturing semiconductor device The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. ... 08/11/05 - 20050176605 - Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture where r and t are 1 or 2, (n+m) is 1 to 30 and (p+q) is 1 to 30. ... 08/11/05 - 20050176604 - Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about ... 08/11/05 - 20050176603 - Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof Microelectronic cleaning compositions for cleaning microelectronic substrates, and particularly cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by silicon dioxide, sensitive low-κ or high-κ dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as ... 08/11/05 - 20050176602 - Microelectronic cleaning and arc remover compositions Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k di-electrics and copper or aluminum metallizations contain a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols and a strong alkaline base. ... 08/04/05 - 20050170980 - Er cleaning composition and method A method for the cleaning of wafers typically during a chemical mechanical polishing (CMP) process. The method includes polishing a material layer on a wafer in sequential polishing steps, rinsing the wafer using a novel surfactant composition solution after at least one of the polishing steps and rinsing of the ... 07/21/05 - 20050159323 - Composition and method for treating a semiconductor substrate The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less or no metal precipitation on the semiconductor ... 07/21/05 - 20050159322 - Aqueous cleaning solution for integrated circuit device and method of cleaning using the cleaning solution Aqueous cleaning solutions are provided for cleaning an integrated circuit device formed on a wafer, as well as methods of cleaning a wafer using the aqueous cleaning solution. In one aspect, an aqueous cleaning solution includes a low foam surfactant, a metal corrosion inhibitor, an acidic pH control agent or ... 07/14/05 - 20050153855 - Photoresist cleaning solutions and methods for pattern formation using the same A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H2O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present ... 06/30/05 - 20050143271 - Composition for cleaning semiconductor device A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protective film-forming test; a semiconductor device comprising a protective film containing a ... 06/30/05 - 20050143270 - Cleaning solutions and etchants and methods for using same Composition for cleaning or etching a semiconductor substrate and method for using the same. The composition may include a fluorine-containing compound as an active agent such as a quaternary ammonium fluoride, a quaternary phosphonium fluoride, sulfonium fluoride, more generally an -onium fluoride or “multi” quaternary-onium fluoride that includes two or ... 06/23/05 - 20050137103 - Stripper for cured negative-tone isoprene-based photoresist and bisbenzocyclobutene coatings A chemical stripping solvent composition is provided for removing cured polymeric isoprene and bisbenzocyclobutene (BCB) substances from an inorganic substrate. The stripping composition comprises about 20 to about 30 weight percent anisole, about 20 to about 30 weight percent mesitylene, about 35 to about 55 weight percent of an alkylbenzene ... 06/09/05 - 20050124517 - Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrates A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, ... 06/09/05 - 20050124516 - Composition and method for removing photoresist materials from electronic components Composition and method for removing photoresist materials from electronic components. The composition is a mixture of at least one dense phase fluid and at least one dense phase fluid modifier. The method includes exposing a substrate to at least one pulse of the composition in a supercritical state to remove ... 06/02/05 - 20050119143 - Compositions for the removal of organic and inorganic residues A composition and method using same for removing photoresist and/or processing residue from a substrate are described herein. In one aspect, there is provided a composition for removing residue consisting essentially of: an acidic buffer solution having an acid selected from a carboxylic acid or a polybasic acid and an ... 06/02/05 - 20050119142 - Cleaning agent composition for a positive or a negative photoresist The present invention relates to a composition for cleaning a photoresist and is to provide a cleaning composition wherein the residue of the photoresist does not remain on the boundary surface between the cleaned area and the not-cleaned area after a negative photoresist containing pigment is cleaned, soft-baked, exposed and ... ### FreshPatents.com Support |