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Semiconductor Device Manufacturing: Process > Radiation Or Energy Treatment Modifying Properties Of Semiconductor Region Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.) > Ionized Irradiation (e.g., Corpuscular Or Plasma Treatment, Etc.) Ionized Irradiation (e.g., Corpuscular Or Plasma Treatment, Etc.)Ionized Irradiation (e.g., Corpuscular Or Plasma Treatment, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/16/06 - 20060258177 - Method for treating a wafer edge A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the wafer surface only on the edge portion that is being treated. Alternatively, the method may be utilized ... 11/09/06 - 20060252283 - Substrate processing apparatus and sustrate processing method To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber ... 09/07/06 - 20060199399 - Surface manipulation and selective deposition processes using adsorbed halogen atoms The present invention provides a surface preparation process using adsorbed halogen. The halogen is applied in a gas phase with UV light. The adsorbed halogen is subsequently modified in another gas phase reaction. The halogen may be reacted with water to form a hydroxyl-bearing Si—O monolayer that forms a layer ... 06/29/06 - 20060141807 - Seal hardening furnace of liquid crystal display device having rack bar A seal hardening furnace is presented in which seal lines in a liquid crystal display panel are hardened. The seal hardening furnace includes a cassette having a rack bar structure. The rack bar structure has rack bars for supporting the substrate along one direction and rack bar supports at ends ... 06/22/06 - 20060134930 - Method for forming a metal contact in a semiconductor device having a barrier metal layer formed by homogeneous deposition Low resistance, high performance, and a longer lifetime of a semiconductor device may be achieved when a metal contact is formed in a semiconductor device by a method including: forming a lower metal layer on a semiconductor substrate; forming an interlayer insulating layer having a via hole on the lower ... 06/01/06 - 20060116002 - Surface-activation of semiconductor nanostructures for biological applications The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to ... 06/01/06 - 20060116001 - Patterning method A method for patterning a device layer, for example of an organic electronic or optoelectronic device, using a patterned stamp. The method comprising the steps of (a) providing a substrate, (b) bringing the patterned stamp into contact with the substrate, (c) removing the patterned stamp from the substrate, characterized in ... 02/09/06 - 20060030167 - Method and system for source switching and in-situ plasma bonding A system for in-situ plasma treatment. The system has a processing chamber, e.g., plasma chamber. The system has a first susceptor coupled within the chamber and a second susceptor facing the first susceptor and being within the chamber. The system has one or more power sources. Preferably, a first power ... 07/07/05 - 20050148210 - Lithographic projection apparatus, reflector assembly for use therein, and device manufacturing method A lithographic projection apparatus includes a radiation system configured to form a beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the beam of radiation provides the beam of radiation with a pattern. A ... 07/07/05 - 20050148209 - Method for preventing metalorganic precursor penetration into porous dielectrics Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or ... ### FreshPatents.com Support |