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Semiconductor Device Manufacturing: Process > Radiation Or Energy Treatment Modifying Properties Of Semiconductor Region Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.) Radiation Or Energy Treatment Modifying Properties Of Semiconductor Region Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.)Radiation Or Energy Treatment Modifying Properties Of Semiconductor Region Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082507 - Method and apparatus for the low temperature deposition of doped silicon nitride films A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon ... 03/29/07 - 20070072439 - Semiconductor device and manufacturing method thereof An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode ... 03/15/07 - 20070059949 - Laser irradiating apparatus and method of manufacturing semiconductor apparatus First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first ... 03/08/07 - 20070054507 - Method of fabricating oxide semiconductor device A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray. ... 03/01/07 - 20070049057 - Heat treatment apparatus and heat treatment method using the same A heat treatment apparatus and a heat treatment method using the same are disclosed. In the method, a support plate on which a device substrate is mounted is loaded into the heat treatment apparatus using a transfer unit in an in-line manner, and the device substrate mounted on the support ... 02/08/07 - 20070032097 - Method and apparatus for processing semiconductor work pieces A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece. ... 02/08/07 - 20070032096 - System and process for providing multiple beam sequential lateral solidification A process and system for processing a thin film on a sample are provided. In particular, a plurality of separated beams each including beam pulses are generated. At least one first beam of the separated beams is forwarded through a mask to irradiate and heat the thin film sample prior ... 02/08/07 - 20070032095 - Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio ... 02/01/07 - 20070026693 - Method of thermally oxidizing silicon using ozone A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other ... 02/01/07 - 20070026692 - Method for applying a high temperature heat treatment to a semiconductor wafer The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments, the high temperature treatments begin at boat-in temperatures of less than about 550° C. and include a first temperature ramp-up to the HT treatment temperatures at ... 02/01/07 - 20070026691 - Low-field non-contact charging apparatus for testing substrates An apparatus and method for charging substrates without introducing high electric fields into the work environment. A non-contact charging plate is combined with a source of bipolar air (or gas) ions to effect the charging. This method is useful for studying the effects of static charge in charge sensitive processes. ... 01/25/07 - 20070020958 - Plasma processing method and apparatus With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power ... 01/11/07 - 20070010104 - Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions Process and system for processing a thin film sample, as well as at least one portion of the thin film structure are provided. Irradiation beam pulses can be shaped to define at least one line-type beam pulse, which includes a leading portion, a top portion and a trailing portion, in ... 01/04/07 - 20070004233 - Manufacturing method of semiconductor device A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is formed over the third layer. After applying an organic resin film covering the fourth layer, laser light ... 01/04/07 - 20070004232 - Laser thermal processing chuck with a thermal compensating heater module Chuck methods and apparatus for supporting a semiconductor substrate and maintaining it at a substantially constant background temperature even when subject to a spatially and temporally varying thermal load. Chuck includes a thermal compensating heater module having a sealed chamber containing heater elements, a wick, and an alkali metal liquid/vapor. ... 01/04/07 - 20070004231 - Method for controlling structure of nano-scale substance, and method for preparing low dimensional quantum structure having nano-scale using the method for controlling structure A method for controlling a structure of a nano-scale substance, which comprises irradiating a mixture of low-dimensional quantum structures having a nano-scale with an electromagnetic wave in an oxygen atmosphere, to thereby selectively oxidize a low-dimensional quantum structure having a density of states resonating with the electromagnetic wave used for ... 12/28/06 - 20060292896 - Heater for heating a wafer and method for preventing contamination of the heater A method for preventing contamination of a heater which is used for heating a wafer with a wafer bevel contains not directly heating the wafer bevel when using the heater to heat the wafer. ... 12/28/06 - 20060292895 - Method for thermal processing a semiconductor wafer A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first ... 12/07/06 - 20060276055 - Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of ... 11/23/06 - 20060264068 - Method for fabricating semiconductor device and semiconductor substrate A first thermal treatment, which is performed at a temperature within 650-750° C. for 30-240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900-1100° C. for 30-120 minutes, are performed as the initial thermal treatments on a semiconductor wafer composed of silicon. Further, before ... 11/09/06 - 20060252282 - Laser thermal annealing of lightly doped silicon substrates Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such ... 10/19/06 - 20060234519 - Contact doping and annealing systems and processes for nanowire thin films Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing ... 10/12/06 - 20060228908 - Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is ... 09/21/06 - 20060211273 - Method of manufacturing an injector plate A method of manufacturing an injector plate is disclosed. A wafer is provided and a release layer is disposed on the wafer. Then a photo resist is formed over the release layer. After photolithography processing, a plurality of plugs are formed from the photo resist. A titanium layer is sputtered ... 09/14/06 - 20060205239 - Laser treatment apparatus A drain port and an exhaust port arranged at the bottom of a cup surrounding a substrate holding unit. A drainage tray is arranged below the cup so as to cover the moving area of the drain port when the substrate holding unit and the cup move in X-directions and ... 09/07/06 - 20060199398 - Method of modifying insulating film An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due ... 08/31/06 - 20060194454 - Technique to radiation-harden trench refill oxides Oxide films are deposited under conditions generating a silicon-rich oxide in which silicon nanoclusters form either during deposition or during subsequent annealing. Such deposition conditions include those producing films with optical indices (n) greater than 1.46. The method of the present invention reduces the TID radiation-induced shifts for the oxides. ... 08/24/06 - 20060189170 - Plasma treatment apparatus and method for plasma treatment A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in ... 08/24/06 - 20060189169 - Method for heat treatment of silicon wafers A method is provided for the heat treatment of low oxygen concentration silicon wafers obtained from a silicon single crystal produced by the Czochralski process. The method comprises high-temperature oxidation heat treatment for the formation of a high oxygen concentration region under the wafer surface and the subsequent oxygen precipitation ... 08/24/06 - 20060189168 - Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device To provide a generator capable of generating plasma and ozone with high efficiency and easy to handle, with a simple structure. An electrode part 10 is formed of electrodes 11 and 12 without dielectric material interposed therebetween. An arc-extinguishing capacitor 13 as a charge storage part for storing charge is ... 08/17/06 - 20060183351 - Apparatus for manufacturing liquid crystal display device An apparatus for manufacturing a liquid crystal display device is disclosed. A first robot arm at a loading side of the thru-conveyor receives a substrate coated with photoresist and conveys the substrate to a thru-conveyor. A softbake hot plate (SHP) at the unloading side of the thru-conveyor removes solvent from ... 08/17/06 - 20060183350 - Process for fabricating semiconductor device A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state ... 07/27/06 - 20060166517 - Phase-shifting mask and semiconductor device Disclosed is a phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation and wherein the phases are substantially equally spaced, thereby increasing resolution of a given lithographic system. ... 07/13/06 - 20060154495 - Device for cleaning the surface of a component A detached particle capture means by laser (4) allows them to be attracted and prevented from dropping back better than a traditional blow-off flushing means would. Various categories of attractive forces may be implemented. It will also be possible to use a particle destruction means, like a second high-power laser ... 07/06/06 - 20060148274 - Device for fabricating a mask by plasma etching a semiconductor substrate A device for fabricating a mask by plasma etching a semiconductor substrate comprises a semiconductor substrate part of the area whereof is partially covered by a mask for protecting at least one area that must not be etched and for exposing at least one area including a pattern to be ... 06/22/06 - 20060134929 - Heating treatment device, heating treatment method and fabrication method of semiconductor device To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film o be treated is formed and infrared light is irradiated from ... 06/15/06 - 20060128167 - Semiconductor device fabrication method The semiconductor device fabrication method comprises the step of forming a first porous insulation film 38 over a semiconductor substrate 10; the step of forming a second insulation film 40 whose density is higher than that of the first porous insulation film 38; and the step of applying electron beams, ... 06/15/06 - 20060128166 - Semiconductor device fabrication method The semiconductor device fabrication method comprises the step of forming a first porous insulation film 38 over a semiconductor substrate 10; the step of forming a second insulation film 40 whose density is higher than that of the first porous insulation film 38; and the step of applying electron beams, ... 06/15/06 - 20060128165 - Method for patterning surface modification A method of patterning surface modification by (a) positioning a repositionable aperture mask in proximity to a substrate, and (b) selectively exposing a portion of the substrate to a surface modification treatment, wherein the exposed portion is defined by one or more apertures in the aperture mask. ... 06/01/06 - 20060116000 - Manufacturing method of insulating film and semiconductor device The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield. According to the invention, a porous insulating film is formed by forming a plurality of pores in an interlayer insulating ... 05/25/06 - 20060110944 - Dummy substrate for thermal reactor A single substrate reactor system for processing batches of product substrates one at a time is provided with at least one dummy substrate. In the time after one batch of product substrates is processed and before another batch of product substrates is ready for processing, the dummy substrate is used ... 05/18/06 - 20060105585 - Autofocus for high power laser diode based annealing system Apparatus for thermally processing a substrate includes a source of laser radiation comprising a plurality diode lasers arranged along a slow axis, optics directing the laser radiation from the source to the substrate, and an array of photodetectors arranged along a fast axis perpendicular to the slow axis and receiving ... 05/18/06 - 20060105584 - Device and method for thermally treating semiconductor wafers A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least ... 05/11/06 - 20060099832 - System and method for determining line widths of free-standing structures resulting from a semiconductor manufacturing process A apparatus and method for determining minimum line widths of free standing structures built by a semiconductor (S/C) manufacturing process. Free standing structures are created in a semiconductor device and subjected to an aerosol process which is tuned and centered with respect to a critical line width for the free ... 05/04/06 - 20060094260 - Method for laser processing of wafer A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the ... 04/06/06 - 20060073708 - Strained silicon on insulator from film transfer and relaxation by hydrogen implantation Transistors fabricated on SSOI (Strained Silicon On Insulator) substrate, which comprises a strained silicon layer disposed directly on an insulator layer, have enhanced device performance due to the strain-induced band modification of the strained silicon device channel and the limited silicon volume because of the insulator layer. The present invention ... 03/30/06 - 20060068607 - Laser illumination apparatus A laser illumination apparatus for illuminating a semiconductor film with a linear laser beam while scanning the semiconductor film with the linear laser beam. An optical system generates a linear laser beam having a beam width W by dividing a pulse laser beam that is emitted from a pulsed laser ... 03/09/06 - 20060051979 - Apparatus and method of exposing a semiconductor device having a curved surface to light A semiconductor manufacturing station (50) exposes light on a surface area of a spherical semiconductor device or ball (52). A mask (56) receives light from a light source (54) and passing the light to the surface area of the semiconductor ball according to a pattern of the mask. A lens ... 02/23/06 - 20060040513 - Duv laser annealing and stabilization of sicoh films A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties ... 02/23/06 - 20060040512 - Single-shot semiconductor processing system and method having various irradiation patterns High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam ... 02/16/06 - 20060035478 - Variable mask device for crystallizing silicon layer and method for crystallizing using the same Disclosed are a variable mask device for crystallizing a silicon layer capable of controlling a width and a length of an opening, and a method for crystallizing a silicon using the variable mask device. The variable mask device has a frame with an opening whose width is controlled by an ... 02/16/06 - 20060035477 - Methods and systems for rapid thermal processing Methods for rapid thermal processing of semiconductor substrates are provided. An exemplary method comprises directing radiant heat energy emitted from a heat source toward a backside surface of the semiconductor substrate. Systems for rapid thermal processing also are provided. ... 02/09/06 - 20060030166 - Laser annealing method In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in ... 02/09/06 - 20060030165 - Multi-step anneal of thin films for film densification and improved gap-fill A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about ... 02/09/06 - 20060030164 - Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at least one masked beam pulse, which is used to irradiate at least one portion ... 02/02/06 - 20060024981 - Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region, and heating the ... 01/26/06 - 20060019503 - Laser crystallization apparatus and laser crystallization method A laser crystallization apparatus which capable of correcting both shift in imaging position caused by thermal lens effect of the imaging optical system and shift due to flatness of the substrate comprises an crystallization optical system which irradiates laser light to a thin film disposed on the substrate to melt ... 01/19/06 - 20060014400 - Method for fabricating a buried metallic layer in a semiconductor body and semiconductor component having a buried metallic layer A method for fabricating a buried metallic layer at a predetermined vertical position in a semiconductor body having a first and second side includes a step of applying a metal layer to one of the first and second sides at least in sections. The method also includes establishing a positive ... 12/29/05 - 20050287825 - Laser anneal method of a semiconductor layer For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower ... 12/29/05 - 20050287824 - Ecr-plasma source and methods for treatment of semiconductor structures The invention relates to microelectronics, more particularly, to methods of manufacturing solid-state devices and integrated circuits utilizing microwave plasma enhancement under conditions of electron cyclotron resonance (ECR), as well as to use of plasma treatment technology in manufacturing of different semiconductor structures. Also proposed are semiconductor device and integrated circuit ... 12/22/05 - 20050282408 - Method for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The ... 12/22/05 - 20050282407 - Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor ... 12/22/05 - 20050282406 - Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser ... 12/22/05 - 20050282405 - Vacuum system for immersion photolithography A vacuum system for extracting a stream of a multi-phase fluid from a photolithography tool comprises a pumping arrangement for drawing the fluid from the tool, and an extraction tank located upstream from the pumping arrangement for separating the fluid drawn from the tool into gas and liquid phases. The ... 12/08/05 - 20050272274 - Apparatus for forming a semiconductor thin film Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing ... 11/17/05 - 20050255716 - Laser irradiation method and method for manufacturing semiconductor device using the same The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance ... 11/17/05 - 20050255715 - Manufacturing method of composite sheet material using ultrafast laser pulses A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (λ), ... 10/27/05 - 20050239299 - Method for manufacturing a display device including irradiating overlapping regions A device-forming region where a semiconductor device is formed is arranged on a substrate in the matrix of 2×2. A linear laser beam has a cross-section having a length longer than the width of the device-forming region. When the irradiation of the laser beam is performed, the region irradiated with ... 10/13/05 - 20050227504 - Method for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The ... 10/13/05 - 20050227503 - Method and device for conditioning semiconductor wafers and/or hybrids The present invention provides a method for conditioning semiconductor wafers and/or hybrids having the steps: preparation of a space (1) which is at least partially enclosed and has a wafer/hybrid holding device (10) which is located therein and has the purpose of holding a semiconductor wafer and/or hybrid; and conduction ... 09/29/05 - 20050215078 - Scribing sapphire substrates with a solid state uv laser A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire ... 09/29/05 - 20050215077 - Method for manufacturing a polycrystalline semiconductor film, apparatus thereof, and image display panel The generation of a projecting intensity distribution in an irradiation laser beam used for forming a polycrystalline semiconductor film is prevented by irradiating the laser beam onto an amorphous semiconductor film to crystallize it while it is being scanned. A dog-ear removing filter for eliminating diffracted light that occurs at ... 09/22/05 - 20050208779 - Imprint lithography process An imprint lithography process is used for the production of a semiconductor component. A polymeric gate dielectric layer (12) is structured in the absence of a resist solely by at least one imprint die (20). Before and/or after the structuring by means of the imprint die (20), the polymer layer ... 08/04/05 - 20050170669 - Plasma processing method and apparatus With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power ... 07/07/05 - 20050148208 - Method and apparatus for forming polycrystalline layer using laser crystallization A method and an apparatus for forming a polycrystalline layer using laser annealing for preventing damage to the peripheral region of the substrate during laser annealing. The laser annealing comprises a shadow mask structure. When crystallizing an amorphous layer by laser annealing, the shadow mask structure shields the peripheral region ... 07/07/05 - 20050148207 - Method of forming a semi-insulating region A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask has a plurality of thicknesses and blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semiconductor substrate. The second mask covers the ... 06/30/05 - 20050142897 - Method for forming polycrystalline silicon film Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first ... 06/30/05 - 20050142896 - Liquid drop jetting apparatus using charged beam and method for manufacturing a pattern using the apparatus The invention drastically improves the accuracy of adhesion position of a liquid drop discharged by a liquid drop discharge method and makes it possible to form a fine and highly accurate pattern directly on a substrate. Therefore, one object of the invention is to provide a method for manufacturing a ... 06/23/05 - 20050136695 - Thin film oxide interface An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects ... 06/23/05 - 20050136694 - Method and apparatus for forming thin film A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. The rotor peripheral surface is also opposed to a film-forming material supplying ... 06/16/05 - 20050130452 - Production method for silicon wafers and silicon wafer A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature ... 06/16/05 - 20050130451 - Method for processing a wafer and apparatus for performing the same Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the ... 06/16/05 - 20050130450 - Device for producing inductively coupled plasma and method thereof A device for producing inductively coupled plasma and method thereof, wherein a coil is uniformly and dispersedly arranged on a lateral wall in a chamber, instead of the prior device of a permanent magnet mounted on an external wall of the chamber, and the coil is so disposed as to ... 06/09/05 - 20050124176 - Semiconductor device and method for fabricating the same and semiconductor device application system A semiconductor surface treatment and a film deposition method capable of realizing surface protection and surface inactivation using a boron nitride film is provided. A high-performance semiconductor device can be manufactured by using the same surface protection technology and surface inactivation technology. Additionally, a electronic device for a communication system ... 06/02/05 - 20050118839 - Chemical mechanical polish process control method using thermal imaging of polishing pad A method and apparatus for controlling CMP (Chemical Mechanical Polishing) for semiconductor substrates includes an infrared camera for detecting and mapping in two dimensions the thermal image of the polishing pad during CMP. The thermal image of the polishing pad is then analyzed and used to control the process parameters ... ### FreshPatents.com Support |