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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Insulative Material Deposited Upon Semiconductive Substrate > Silicon Oxide Formation Silicon Oxide FormationSilicon Oxide Formation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070054504 - Post deposition plasma treatment to increase tensile stress of hdp-cvd sio2 A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and ... 03/01/07 - 20070049056 - Silicon surface preparation Methods are provided for producing a pristine hydrogen-terminated silicon wafer surface with high stability against oxidation. The silicon wafer is treated with high purity, heated dilute hydrofluoric acid with anionic surfactant, rinsed in-situ with ultrapure water at room temperature, and dried. Alternatively, the silicon wafer is treated with dilute hydrofluoric ... 02/01/07 - 20070026690 - Selective frequency uv heating of films A layer, such as a dielectric, formed on a substrate, such as a silicon substrate, is heated by selecting a specific wavelength or energy for the material of the layer, such that photons readily pass and are absorbed by the material and then reflected from the interface of the layer ... 12/28/06 - 20060292894 - Gapfill using deposition-etch sequence Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to ... 12/14/06 - 20060281337 - Method and apparatus for forming silicon oxide film A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a chlorosilane family gas, a second process gas containing a Cl-replacing gas, and a third process gas containing an oxidizing gas. This method ... 12/14/06 - 20060281336 - Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first insulating film, forming a polymer solution layer containing a silicon-containing polymer on the water-adhered first insulating film, and forming a second ... 11/16/06 - 20060258176 - Method for forming insulation film A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma ... 09/21/06 - 20060211270 - Methods for improving quality of high temperature oxide (hto) formed from halogen-containing precursor and products thereof and apparatus therefor A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlorosilane (DCS) and an oxygen-providing reactant such as N2O. In one embodiment, a DCS-HTO film ... 09/14/06 - 20060205236 - Intermediate semiconductor device structures using photopatternable, dielectric materials A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the ... 08/31/06 - 20060194453 - Silicon dioxide film and process for preparation of the same A transparent amorphous silicon dioxide film containing many fine voids, characterized in that the refractive index (for light at λ=500 nm) is in the range of 1.01 to 1.40 and that 80 vol. % or more of the fine voids have a diameter of 5 nm or less, has a ... 08/03/06 - 20060172555 - Method to make silicon nanoparticle from silicon rich-oxide by dc reactive sputtering for electroluminescence application A method of forming a silicon-rich silicon oxide layer having nanometer sized silicon particles therein includes preparing a substrate; preparing a target; placing the substrate and the target in a sputtering chamber; setting the sputtering chamber parameters; depositing material from the target onto the substrate to form a silicon-rich silicon ... 08/03/06 - 20060172554 - Method of forming gate dielectric layer A method for forming a gate dielectric layer is described. A silicon oxide layer is formed on a semiconductor substrate. Then, a first and a second nitrogen doping processes are performed in sequence to the silicon oxide layer using plasma comprising inert gas and gaseous nitrogen to form a gate ... 07/27/06 - 20060166513 - Method and apparatus for forming thin film of semiconductor device A method of forming a high quality thin film on a semiconductor substrate includes supplying a first gas to change a crystal structure of a semiconductor substrate, and a second gas to form a thin film on the semiconductor substrate; sputtering the first gas in a plasma state to the ... 07/20/06 - 20060160375 - Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, methods of forming trench isolation in the fabrication of integrated circuitry, method of depositing silicon dioxide-comprising layers in the fabrication o This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over capacitor arrays of memory cells. In one implementation, a semiconductor substrate having an exposed outer first surface comprising silicon-nitrogen bonds and an ... 07/13/06 - 20060154494 - High-throughput hdp-cvd processes for advanced gapfill applications Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an ... 07/06/06 - 20060148273 - Method using teos ramp-up during teos/ozone cvd for improved gap-fill Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an ... 06/15/06 - 20060128164 - Chemical treatment of semiconductor substrates A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the substrate. In particular, the method is ... 03/16/06 - 20060057860 - Manufacturing method of semiconductor device and semiconductor manufacturing device A manufacturing method of a semiconductor device, comprises; a process of heat-treating a semiconductor substrate under the ordinary pressure and in an oxidizing atmosphere; and a process of heat-treating the semiconductor substrate under the ordinary pressure and in an inert atmosphere, wherein heat-treating time or heat-treating temperature in heat treatment ... 02/23/06 - 20060040510 - Semiconductor device with silicon dioxide layers formed using atomic layer deposition Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, ... 01/05/06 - 20060003603 - Method and apparatus for processing A method for forming an insulating film low in defects, in high throughput and with high reliability includes a first step of oxidizing an article employing a plasma having oxidizing species including ions to form an oxide film having a desired film thickness, and a second step of controlling an ... 01/05/06 - 20060003602 - Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series ... 10/13/05 - 20050227501 - Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin ... 09/22/05 - 20050208778 - Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over capacitor arrays of memory cells. In one implementation, a semiconductor substrate having an exposed outer first surface comprising silicon-nitrogen bonds and an ... 09/08/05 - 20050196976 - Methods of filling gaps using high density plasma chemical vapor deposition The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of ... 08/18/05 - 20050181633 - Precursors for depositing silicon-containing films and processes thereof Inorganic precursors, namely iodosilane precursors, for the low temperature, low pressure deposition of silicon-containing films is provided therein. In one aspect, there is provided a process for forming a silicon-containing film process comprising: introducing a substrate and gaseous reagents comprising an iodosilane precursor having three or less iodine atoms bound ... 06/30/05 - 20050142895 - Gap-fill depositions in the formation of silicon containing dielectric materials A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of ... 06/23/05 - 20050136692 - Material for forming silica based film A material for forming a silica based film which enables the production of a silica based film with a reduced etching rate relative to hydrofluoric acid. This material includes a solid fraction containing a film forming component capable of generating a silica based film, an organic solvent, and water, and ... 06/16/05 - 20050130449 - Method of forming an oxide layer using a mixture of a supercritical state fluid and an oxidizing agent A method of forming an oxide layer. A fluid, such as water, is heated and pressurized to supercritical or near-supercritical conditions and mixed with at least one oxidizing agent. The supercritical state mixture of the fluid and at least one oxidizing agent is then applied on the workpiece, forming an ... ### FreshPatents.com Support |