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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Insulative Material Deposited Upon Semiconductive Substrate > Tertiary Silicon Containing Compound Formation (e.g., Oxynitride Formation, Etc.) Tertiary Silicon Containing Compound Formation (e.g., Oxynitride Formation, Etc.)Tertiary Silicon Containing Compound Formation (e.g., Oxynitride Formation, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087583 - Method of forming a silicon oxynitride layer A SiOxNy gate dielectric and a method for forming a SiOxNy gate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 and then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure ... 03/22/07 - 20070066087 - Method of manufacturing a semiconductor device According to an exemplary embodiment of the present invention, a method of manufacturing a semiconductor device having active regions including a SONOS device region, a high voltage device region, and a logic device region, includes defining the active regions by forming a device isolation region on a semiconductor substrate; performing ... 01/11/07 - 20070010103 - Nitric oxide reoxidation for improved gate leakage reduction of sion gate dielectrics A method of forming a silicon oxynitride gate dielectric. The method includes providing a structure comprising a silicon film formed on a substrate. The structure is exposed to a first plasma comprising a nitrogen source to incorporate nitrogen into the silicon film. The structure is oxidized in an atmosphere comprising ... 11/09/06 - 20060252280 - Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to ... 08/31/06 - 20060194452 - Plasma nitridization for adjusting transistor threshold voltage A method of adjusting the threshold voltage of semiconductor devices by incorporating nitride into the isolation layer so as to decrease the mobility of charge carriers and thereby increase the threshold voltage required to activate the device. The nitrogen incorporation method may comprise of decoupled plasma nitridization (DPN) and the ... 08/31/06 - 20060194451 - High-k dielectric film, method of forming the same and related semiconductor device A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having ... 08/10/06 - 20060178018 - Silicon oxynitride gate dielectric formation using multiple annealing steps A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pressure of about 1 to about 100 mTorr, ... 07/13/06 - 20060154493 - Method for producing gate stack sidewall spacers A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materials may be silicon carbide, ... 05/25/06 - 20060110942 - Method of manufacturing flash memory device A method of manufacturing flash memory devices, comprises the steps of forming an oxide film on a semiconductor substrate, performing a pre-annealing process under N2 gas atmosphere, nitrifying the oxide film by performing a main annealing process under N2O atmosphere having the flow rate of 5 to 15 slm for ... 05/18/06 - 20060105582 - Semiconductor device and method for fabricating same A method is provided with: arranging nitrogen atoms on a surface of a silicon substrate; performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; and forming a silicon ... 05/18/06 - 20060105581 - Glycol doping agents in carbon doped oxide films A method for forming a carbon doped oxide (CDO) film comprises doping an organosilane precursor material with a glycol material and using the doped organosilane precursor material in a deposition process to form the CDO film. The glycol material may be propylene glycol (PD). The PD-doped CDO films formed using ... 02/02/06 - 20060024978 - Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in ... 09/29/05 - 20050215074 - Ono formation method An ONO formation method comprises the following procedures. First, a bottom oxide layer is formed on a silicon substrate, and then a silicon-rich nitride layer is deposited on the bottom oxide layer. Then, an oxidation process is performed to react with silicon atoms in the silicon-rich nitride layer, so as ... 06/16/05 - 20050130448 - Method of forming a silicon oxynitride layer A SiOxNy gate dielectric and a method for forming a SiOxNy gate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 and then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure ... 06/02/05 - 20050118836 - Dielectrics with improved leakage characteristics Methods for forming an oxynitride dielectric in a semiconductor device are disclosed. In the method, an oxynitride layer is grown on a semiconductor device. The oxynitride layer is then annealed at a temperature of about 400° C. for about 20 minutes. Further, the annealing may be performed in a nitrogen ... ### FreshPatents.com Support |