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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Insulative Material Deposited Upon Semiconductive Substrate > Insulative Material Is Compound Of Refractory Group Metal (i.e., Titanium (ti), Zirconium (zr), Hafnium (hf), Vanadium (v), Niobium (nb), Tantalum (ta), Chromium (cr), Molybdenum (mo), Tungsten (w), Or Alloy Thereof) Insulative Material Is Compound Of Refractory Group Metal (i.e., Titanium (ti), Zirconium (zr), Hafnium (hf), Vanadium (v), Niobium (nb), Tantalum (ta), Chromium (cr), Molybdenum (mo), Tungsten (w), Or Alloy Thereof)Insulative Material Is Compound Of Refractory Group Metal (i.e., Titanium (ti), Zirconium (zr), Hafnium (hf), Vanadium (v), Niobium (nb), Tantalum (ta), Chromium (cr), Molybdenum (mo), Tungsten (w), Or Alloy Thereof) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/15/07 - 20070059948 - Ald metal oxide deposition process using direct oxidation Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer ... 03/08/07 - 20070054503 - Film forming method and fabrication process of semiconductor device A method of forming a film on a substrate includes a first step of carrying out first film formation on an insulation layer formed on the substrate by an ALD process, and a second step of carrying out second film formation in continuation to the first step by a CVD ... 03/01/07 - 20070049055 - Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds The present invention provides atomic layer deposition systems and methods that include at least one compound of the formula (Formula I): Ta(NR1)(NR2R3)3, wherein each R1, R2, and R3 is independently hydrogen or an organic group, with the proviso that at least one of R1, R2, and R3 is a silicon-containing ... 03/01/07 - 20070049054 - Cobalt titanium oxide dielectric films Electronic apparatus and methods of forming the electronic apparatus include a cobalt titanium oxide film on a substrate for use in a variety of electronic systems. The cobalt titanium oxide film may be structured as one or more monolayers. The cobalt titanium oxide film may be formed by atomic layer ... 03/01/07 - 20070049053 - Pretreatment processes within a batch ald reactor Embodiments of the invention provide methods for forming a material on a substrate which includes exposing a plurality of substrates within a batch process chamber to a first oxidizing gas during a pretreatment process, exposing the substrates sequentially to a precursor and a second oxidizing gas during an ALD cycle ... 02/22/07 - 20070042612 - Method for manufacturing semiconductor device It is made possible to form a silicon nitride film, an aluminum oxide film and a transition metal high-k insulation film of high quality. A manufacturing method includes: forming an insulation film having at least one kind of bonds selected out of silicon-nitrogen bonds, aluminum-oxygen bonds, transition metal-oxygen-silicon bonds, transition ... 02/15/07 - 20070037412 - In-situ atomic layer deposition An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and ... 01/25/07 - 20070020957 - Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film ... 01/04/07 - 20070004230 - Post polish anneal of atomic layer deposition barrier layers A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD. ... 11/23/06 - 20060264067 - Surface pre-treatment for enhancement of nucleation of high dielectric constant materials Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, ... 11/23/06 - 20060264066 - Multilayer multicomponent high-k films and methods for depositing the same The present invention provides systems and methods for forming a multi-layer, multi-component high-k dielectric film. In some embodiments, the present invention provides systems and methods for forming high-k dielectric films that comprise hafnium, titanium, oxygen, nitrogen, and other components. In a further aspect of the present invention, the dielectric films ... 11/16/06 - 20060258175 - Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands. ... 11/16/06 - 20060258174 - Substrate treatment apparatus and method of manufacturing semiconductor device A substrate treatment apparatus, comprising a reaction tube (203) and a heater (207) heating a silicon wafer (200), wherein trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tube (203) to generate Al2O3 film on the surface of the wafer (200). The apparatus also comprises supply tubes ... 11/09/06 - 20060252279 - Systems and methods for forming metal oxides using metal diketonates and/or ketoimines A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands. ... 11/02/06 - 20060246741 - Atomic layer deposited nanolaminates of hfo2/zro2 films as gate dielectrics A dielectric film containing a nanolaminate with a hafnium oxide layer and a zirconium oxide layer and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using silicon oxide. ... 10/26/06 - 20060240679 - Method of manufacturing semiconductor device having reaction barrier layer A method of manufacturing a semiconductor device comprises forming a lower electrode on a substrate using a titanium chloride pulsed deposition (TPD) process, forming a high-k dielectric layer on the lower electrode, and forming an upper electrode on the dielectric layer using a TPD process. The method further comprises forming ... 10/05/06 - 20060223339 - Ald metal oxide deposition process using direct oxidation Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic ... 10/05/06 - 20060223338 - Film formation method and recording medium A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the metal silicate film on ... 10/05/06 - 20060223337 - Atomic layer deposited titanium silicon oxide films A dielectric layer containing an atomic layer deposited titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include forming titanium silicates and/or mixtures of titanium oxide and silicon ... 09/28/06 - 20060216954 - Method for manufacturing semiconductor device After a bottom electrode film is formed, a ferroelectric film is formed on the bottom electrode film. Then, a heat treatment is performed for the ferroelectric film in an oxidizing atmosphere so as to crystallize the ferroelectric film. Then, a top electrode film is formed on the ferroelectric film. In ... 09/28/06 - 20060216953 - Method of forming film and film forming apparatus The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a ... 09/21/06 - 20060211269 - Semiconductor device and its fabrication method A fabrication method of a semiconductor device comprises the steps of forming a metal thin film Whose oxide is insulative on sidewall of a hole formed in a semiconductor substrate and forming an insulating metal oxide film by oxidizing the metal thin film. ... 09/14/06 - 20060205235 - Semiconductor device and fabrication method thereof A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the ... 09/14/06 - 20060205234 - Forming a barrier layer in interconnect joints and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer. ... 08/31/06 - 20060194450 - Semiconductor device and fabrication process of semiconductor device A method of fabricating a semiconductor device on a Si substrate includes a first step of forming an insulation film containing an oxide of Zr or Hf on a Si substrate, a second step of forming a gate electrode film on the insulation film, a third step of patterning the ... 08/24/06 - 20060189164 - Hafnium alloy target and process for producing the same Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit ... 07/27/06 - 20060166512 - Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same wherein M represents a metal in listed in Group 4A of the periodic table of elements, R1, R2 and R3 independently represent hydrogen or an alkyl group having a carbon number from 1 to 5, and X represents hydrogen or an alkyl group having a carbon number from 1 to ... 06/08/06 - 20060121744 - Top surface roughness reduction of high-k dielectric materials using plasma based processes A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer. ... 05/04/06 - 20060094259 - Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication process A semiconductor fabrication annealing process includes depositing a high dielectric constant gate dielectric over a substrate and annealing the gate dielectric. Annealing the gate dielectric includes exposing the gate dielectric to an inert ambient and ramping the inert ambient to an annealing temperature. A passivating gas is then introduced into ... 03/30/06 - 20060068604 - Barrier layer and fabrication method thereof A barrier layer and a fabrication thereof are disclosed. The barrier layer comprises at least one barrier material selected from the group consisting of Ta, W, Ti, Ru, Zr, Hf, V, Nb, Cr and Mo and at least one component of oxygen, nitrogen or carbon. A ratio of the component ... 03/30/06 - 20060068603 - A method for forming a thin complete high-permittivity dielectric layer A method for forming a thin complete high-k layer for semiconductor applications. The method includes providing a substrate in a process chamber, depositing a thick complete high-k layer on the substrate, and thinning the deposited high-k layer to form a thin complete high-k layer on the substrate. Alternately, the substrate ... 03/23/06 - 20060063395 - Manufacturing method of a semiconductor device A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250° C. or higher, so that impurities are reduced and density is ... 03/09/06 - 20060051978 - High dielectric constant transition metal oxide materials A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium ... 03/02/06 - 20060046522 - Atomic layer deposited lanthanum aluminum oxide dielectric layer Atomic layer deposited lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices. In an embodiment, a lanthanum aluminum oxide dielectric layer is formed by depositing aluminum and lanthanum by atomic ... 01/26/06 - 20060019501 - Methods of forming a thin layer including hafnium silicon oxide using atomic layer deposition and methods of forming a gate structure and a capacitor including the same Methods of forming a thin film include applying a first reactant to a substrate, chemisorbing a first portion of the first reactant and physisorbing a second portion of the first reactant on the substrate, applying a first oxidizer to the substrate, chemically reacting the first oxidizer with the first portion ... 01/26/06 - 20060019500 - Ultraviolet blocking layer Semiconductor structures and methods of fabricating semiconductor structures are disclosed. The method comprises the steps of: providing an initial semiconductor structure; forming a non-silicon layer overlying the initial semiconductor structure, the non-silicon layer having an extinction coefficient greater than zero at wavelengths below about 300 nanometers; and performing a plasma-based ... 12/22/05 - 20050282403 - Ceramic electronic device and the production method A ceramic electronic device having a dielectric layer, wherein the dielectric layer includes a main component containing a (Ba, Ca (Ti, Zr)O3 based material and a subcomponent containing an oxide of Si; and a content of the Si oxide is 0 to 0.4 wt % (note that 0 is not ... 12/15/05 - 20050277304 - Titanium silicate films with high dielectric constant A method of making a film with a high dielectric constant uses a spin-on sol-gel process to deposit the film on a substrate, the film having a composition (SiO2)x(TiO2)1-x, where 0.50<x<0.75. The resulting film is annealed in an oxygen-containing atmosphere at a temperature lying in the range of 500° C. ... 12/08/05 - 20050272272 - Semiconductor device and method for manufacturing the same A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer ... 12/08/05 - 20050272271 - Semiconductor processing method for processing substrate to be processed and its apparatus A method for processing a target substrate (10) in a semiconductor processing apparatus (1) controls temperature of a first substrate (10) at a process temperature inside a process container (2), while supplying a process gas into the process container, thereby subjecting the first substrate to a semiconductor process, during which ... 12/01/05 - 20050266700 - Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a metal other than germanium, and the second precursor ... 11/17/05 - 20050255711 - Method for forming underlying insulation film The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film ... 11/10/05 - 20050250347 - Method and apparatus for maintaining by-product volatility in deposition process A method and apparatus for introducing a fluorine-containing flow stream to a deposition process to maintain process by-product volatility and reduce or eliminate by-product formation and/or interference. ... 11/03/05 - 20050245099 - Film formation apparatus and method of using the same A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, ... 10/27/05 - 20050239298 - Process for deposition of a thin layer on an oxidized layer of a substrate A thin layer comprising at least a metal and a non-metallic chemical element is deposited on an oxidized layer of a substrate arranged in a reactor. The thin layer is formed by a plurality of superposed atomic layers formed by repetition of a reaction cycle comprising at least a first ... 10/27/05 - 20050239297 - Growth of high-k dielectrics by atomic layer deposition In general, the present invention provides a method of depositing high-k dielectric films or layers, such as but not limited to high-k gate dielectric films. In one embodiment, atomic layer deposition (ALD) cycles are carried out where ozone is selectively conveyed to a chamber in separate cycles to form a ... 10/20/05 - 20050233598 - Method of fabricating high-k dielectric layer having reduced impurity Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a ... 10/13/05 - 20050227500 - Method for producing material of electronic device A film is formed on the surface of an electronic device substrate by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits in the presence of a process gas comprising at least a gas containing a film-forming substance and a rare gas. An ... 08/04/05 - 20050170667 - Nanolaminate film atomic layer deposition method An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited ... 08/04/05 - 20050170666 - Semiconductor device and manufacturing method of the same A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas. ... 07/14/05 - 20050153573 - Semiconductor device and manufacturing method thereof A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NH3 gas, an NH3 gas purge step of purging ... 07/07/05 - 20050148206 - Atomic layer deposition using photo-enhanced bond reconfiguration An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are formed, a substrate or previous layer is exposed to a first reactant. After the substrate or layer has reacted with ... 06/23/05 - 20050136691 - Method and apparatus for depositing dielectric films A method of depositing a dielectric film, such as tantalum oxide, on a substrate is described. In one example, a substrate is placed in a process zone to face a metal target and a pulsed DC voltage is applied to the target. A sputtering gas comprising a non-reactive component and ... 06/23/05 - 20050136690 - Defect control in gate dielectrics A method for improving high-κ gate dielectric film (104) properties. The high-κ film (104) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (106) with low partial pressure of oxidizer to promote film relaxation and increase by-product diffusion and desorption. The second ... 06/23/05 - 20050136689 - Systems and methods for forming metal oxides using alcohols A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds. ... 06/09/05 - 20050124175 - Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics The invention provides a laminated dielectric layer for semiconductor devices formed by a combination of ZrO2 and a lanthanide oxide on a semiconductor substrate and methods of making the same. In certain methods, the ZrO2 is deposited by multiple cycles of reaction sequence atomic layer deposition (RS-ALD) that includes depositing ... 06/09/05 - 20050124174 - Lanthanide doped tiox dielectric films by plasma oxidation A dielectric film containing lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by ion assisted electron beam evaporation of Ti, electron beam evaporation of a lanthanide ... ### FreshPatents.com Support |