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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Insulative Material Deposited Upon Semiconductive Substrate > Depositing Organic Material (e.g., Polymer, Etc.) > Subsequent Heating Modifying Organic Coating Composition Subsequent Heating Modifying Organic Coating CompositionSubsequent Heating Modifying Organic Coating Composition patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077782 - Treatment of low dielectric constant films using a batch processing system A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are ... 04/05/07 - 20070077781 - Plural treatment step process for treating dielectric films A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on at least one of said one or ... 03/08/07 - 20070054501 - Process for modifying dielectric materials The invention relates to a process for modifying materials including, e.g., dielectric materials associated with electronic substrates, semiconductor chips, wafers, and the like, damaged by fabrication processes such as plasma etch processing. The described method improves structural integrity as measured, e.g., by Young's Modulus, as well as hydrophobicity, as measured, ... 02/15/07 - 20070037411 - Method of manufacturing an electronic device The electronic device with a layer of mesoporous silica can be obtained by applying a composition comprising alkoxysilane, a surfactant and a solvent onto a substrate, and by subsequently removing the surfactant and the solvent. The customary dehydroxylation treatment is not necessary if the composition contains a mixture of tetra-alkoxysilane, ... 02/01/07 - 20070026689 - Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH3 bond and an Si—CHx- bond, where x represents an integer of 0 to 2. ... 12/21/06 - 20060286813 - Silica and silica-like films and method of production A method of producing a silica or silica-like coating by forming a precursor formulation from oligomeric organosilicate. The precursor formulation is coated on a substrate as a continuous liquid phase. The precursor formulation is then cured in an ammoniacal atmosphere to produce a continuous, interconnected, nano-porous silica network. ... 11/23/06 - 20060264065 - Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial ... 08/31/06 - 20060194449 - Resist pattern forming method and method of manufacturing semiconductor device A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming ... 08/24/06 - 20060189163 - Method of forming thick silica-based film The present invention provides a process for forming a silica-based coating film, characterized by heating a reaction mixture comprising a silicon compound (A) represented by Si(OR)4 and/or a silicon compound (B) represented by R1nSi (OR2)4-n (wherein n is an integer of from 1 to 3), an alcohol (C) represented by ... 07/13/06 - 20060154492 - Forming method of low dielectric constant insulating film of semiconductor device, semiconductor device, and low dielectric constant insulating film forming apparatus It is an object of the present invention to cure an insulating film of a semiconductor device in a short time while keeping a low dielectric constant. In the present invention, a coating film made of porous MSQ is formed on a substrate, the substrate on which the porous MSQ ... 05/25/06 - 20060110941 - Method of improving via filling uniformity in isolated and dense via-pattern regions An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which minimizes step height differences between isolated and dense via-pattern regions for optimizing a subsequent trench process and simplifying process steps. ... 04/20/06 - 20060084282 - Porous organosilicates with improved mechanical properties Oxycarbosilane materials make excellent matrix materials for the formation of porous low-k materials using incorporated pore generators (porogens). The elastic modulus numbers measured for porous samples prepared in this fashion are 3-6 times higher than porous organosilicates prepared using the sacrificial porogen route. The oxycarbosilane materials are used to produce ... 02/23/06 - 20060040509 - Composition for preparing nanoporous material Disclosed herein is a composition for preparing a nanoporous material. The composition comprises i) a cyclodextrin derivative, ii) a thermostable matrix precursor, and iii) a solvent for dissolving the components i) and ii). The composition enables the preparation of a low dielectric constant film in which nanopores with a size ... 01/05/06 - 20060003601 - Method of forming fine patterns It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between ... 11/03/05 - 20050245098 - Method and apparatus for selectively altering dielectric properties of localized semiconductor device regions A method for selectively altering dielectric properties of a semi-conductor device. In an exemplary embodiment, the method includes applying energy to a local region of interest, the local region of interest including a thermally alterable dielectric such that said heating caused by the applied energy causes a dielectric constant of ... 09/22/05 - 20050208777 - Film forming method, and substrate-processing apparatus A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an ... 08/18/05 - 20050181630 - Method of making a semiconductor device using treated photoresist A semiconductor device is made by patterning a conductive layer for forming gates of transistors. The process for forming the gates has a step of patterning photoresist that overlies the conductive layer. The patterned photoresist is trimmed so that its width is reduced. Fluorine, preferably F2, is applied to the ... 06/23/05 - 20050136687 - Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture A composition comprising a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A method of producing a nanoporous silica dielectric film having a void ... ### FreshPatents.com Support |