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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Insulative Material Deposited Upon Semiconductive Substrate > Depositing Organic Material (e.g., Polymer, Etc.) Depositing Organic Material (e.g., Polymer, Etc.)Depositing Organic Material (e.g., Polymer, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087581 - Technique for atomic layer deposition A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by a method for forming a strained thin film. The method may comprise supplying a substrate surface with one or more precursor substances having atoms of at least one first species and ... 04/05/07 - 20070077780 - Process to open carbon based hardmask A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch ... 03/15/07 - 20070059947 - Method of manufacturing carbon nanotube semiconductor device Provided is a method of controlling an alignment direction of CNTs in manufacturing a carbon nanotube semiconductor device using the CNTs for a channel region formed between a source electrode and a drain electrode. In manufacturing a carbon nanotube semiconductor device including a gate electrode, a gate insulating film, a ... 03/15/07 - 20070059946 - Method for compensating film height modulations in spin coating of a resist film layer A method compensates film height modulations in spin coating of a resist film layer. From a desired layout pattern, a substrate topography as a result of lithographically structuring in image fields is determined. A spin coating model is provided to determine a modeled resist film height based on the substrate ... 03/08/07 - 20070054500 - Removable amorphous carbon cmp stop A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for processing a substrate including ... 03/01/07 - 20070049052 - Method for processing a layered stack in the production of a semiconductor device A resist layer is deposited a resist layer on a first layer of a layered stack. The stack also includes a second layer below the first layer. The resist layer is processed with a lithographic method to achieve a first structured resist layer. At least a part of the first ... 02/22/07 - 20070042611 - Method of producing a trench in a photo-resist on a iii-v wafer and a compound wafer having a photo-resist including such a trench A method of producing a trench in a photo-resist on a III-V wafer comprising providing a III-V wafer; providing a photo-resist on the wafer; exposing the photo-resist to UV radiation through a mask; removing one of the exposed or non-exposed portions of the photo-resist to produce a recess; applying a ... 02/15/07 - 20070037410 - Method for forming a lithography pattern A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the ... 01/04/07 - 20070004229 - Lamination of organic semiconductors Low temperature, ambient pressure processes are desired for fabrication of transistors on flexible polymer substrates. Lamination of semiconductors is such a process. The semiconductor is deposited on a donor substrate. The donor is positioned over a receiver substrate, which may be patterned with additional transistor elements. The semiconductor is transferred ... 01/04/07 - 20070004228 - Polyamide acid-containing composition for forming antireflective film There is provided an anti-reflective coating forming composition for use in a lithography and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. Concretely, the composition comprises a polyamic ... 12/28/06 - 20060292892 - Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial ... 12/14/06 - 20060281334 - Method for forming high-resolution pattern and substrate having prepattern formed thereby Disclosed is a method for forming a pattern, which comprises the steps of: (a) providing a substrate having a sacrificial layer made of a first material, partially or totally formed on the substrate; (b) forming pattern grooves, which are free from the first material and have a line width of ... 12/14/06 - 20060281333 - Method for forming high-resolution pattern with direct writing means Disclosed is a method for forming a pattern which comprises the steps of: (a) providing a substrate having a sacrificial layer made of a first material, partially or totally formed on the substrate; (b) forming pattern grooves, which are free from the first material and have a line width of ... 12/14/06 - 20060281332 - Structure for a semiconductor arrangement and a method of manufacturing a semiconductor arrangement The invention relates to a structure for a semiconductor arrangement. A resist structure for supporting deposition of a solution containing a semiconductor is directly or through intervening layers coupled to a substrate. The resist structure comprises a depression (301) for depositing of the solution containing the semiconductor (309) and a ... 11/30/06 - 20060270248 - Solvent management methods for gel production Embodiments of the present invention describe a method for continuous manufacture of a gel material comprising the steps of: forming a gel sheet by dispensing a gel precursor mixture onto a moving element at a rate effective to allow gelation to occur to the gel precursor mixture on the moving ... 11/16/06 - 20060258173 - Precursors for cvd silicon carbo-nitride films and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2. ... 11/09/06 - 20060252277 - Methods of forming patterned photoresist layers over semiconductor substrates This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is formed over the semiconductor substrate. The antireflective coating has an outer surface. The outer surface is treated with a basic fluid. A positive photoresist is applied ... 10/12/06 - 20060228906 - Method of patterning conductive polymer layer, organic light emitting device, and method of manufacturing the organic light emitting device A method of patterning a conductive polymer, an organic light emitting device (OLED) manufactured using the method of patterning a conductive polymer, and a method of manufacturing the OLED are provided. The method of patterning a conductive polymer includes forming a conductive polymer layer on a substrate, aligning a shadow ... 09/28/06 - 20060216952 - Vapor phase treatment of dielectric materials The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present ... 09/21/06 - 20060211268 - Method and apparatus for processing organosiloxane film There is provided a method and apparatus for processing an organosiloxane film, which allow an inter-level insulating film with a low dielectric constant to be formed at a low heat process temperature. A semiconductor (10) with a coating film formed thereon is loaded into a reaction tube (2) of a ... 09/07/06 - 20060199397 - Fabrication of semiconductor devices using anti-reflective coatings Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic process is provided over the first anti-reflective coating, and a photosensitive ... 08/31/06 - 20060194448 - Replication tools and related fabrication methods and apparatus Durable seamless replication tools are disclosed for replication of seamless relief patterns in desired media, for example in optical recording or data storage media. Methods of making such durable replication tools are disclosed, including preparing a recording substrate on the inner surface of a support cylinder, recording and developing a ... 08/24/06 - 20060189162 - Adhesion improvement for low k dielectrics Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon ... 08/24/06 - 20060189161 - Method and apparatus for treating organosiloxane coating film A method for processing an organosiloxane film includes loading a target substrate (W) with a coating film formed thereon into a reaction chamber (2), and performing a heat process on the target substrate (W) within the reaction chamber (2) to bake the coating film. The coating film contains a polysiloxane ... 08/24/06 - 20060189160 - Method for producing a pattern formation mold The method for producing a pattern formation mold includes: a first step of applying to a substrate a radiation-sensitive negative-type resist composition containing an epoxy resin represented by formula (I): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of ... 08/03/06 - 20060172553 - Method of retaining a substrate to a wafer chuck The present invention is directed towards a method of retaining a substrate to a wafer chuck. The method features accelerating a portion of the substrate toward the wafer chuck, generating a velocity of travel of the substrate toward the wafer chuck, and reducing the velocity before the substrate reaches the ... 07/27/06 - 20060166511 - Method for treatment of film or sheet A film or sheet containing an optionally crosslinked organic polymer having a high degree of crosslinking and having a little amount of residual solvent is obtained within a short period of time under a low pressure by bringing a film or sheet containing an organic polymer into contact with a ... 07/06/06 - 20060148272 - Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission A nanoparticle coated with a semiconducting material and a method for making the same. In one embodiment, the method comprises making a semiconductor coated nanoparticle comprising a layer of at least one semiconducting material covering at least a portion of at least one surface of a nanoparticle, comprising: (A) dispersing ... 06/15/06 - 20060128163 - Surface treatment of post-rie-damaged p-osg and other damaged materials Damaged porous OSG layers and other damage may be chemically healed. Chemical healing is particularly advantageous in a porous OSG layer in a sub 90 nm ILD. For example, chemical healing may be by reacting the damage with an adhesion promoter having a “k” value comparable to the “k” value ... 06/08/06 - 20060121743 - Flow control of photo-polymerizable resin This invention provides methods and systems, e.g., to control the flow of photo-polymerizable resins. In the method, e.g., flow of a photo-polymerizable resin is restricted from illuminated resin exclusion regions on a substrate surface by precisely situated flow barriers. A system to control photo-polymerizable resin flow includes, e.g., a light ... 06/01/06 - 20060115999 - Methods of exposure for the purpose of thermal management for imprint lithography processes The present invention is directed to a method that attenuates, if not avoids, heating of a substrate undergoing imprint lithography process and the deleterious effects associated therewith. To that end, the present invention includes a method of patterning a field of a substrate with a polymeric material that solidifies in ... 06/01/06 - 20060115998 - Method for forming pattern of organic insulating film A method for forming a pattern of an organic insulating film by forming an electrode on a substrate, coating an imprintable composition thereon to form an organic insulating film, pressurizing and curing the organic insulating film using a patterned mold to transfer a pattern of the mold to the organic ... 06/01/06 - 20060115997 - Method for patterning thin film, method and apparatus for fabricating flat panel display Disclosed is a method and apparatus for fabricating a patterned thin film layer within a flat panel display that employs a soft mold and heat treatment in place of a photolithographic process. The disclosed method may reduce process time as well as substantially minimize pattern deformities. A method of fabricating ... 05/25/06 - 20060110940 - Method of preparing mesoporous thin film having low dielectric constant A method of preparing a mesoporous thin film having a low dielectric constant, which includes mixing a cyclic siloxane-based monomer, an organic solvent, an acid catalyst or a base catalyst, and water, to prepare a coating solution, which is then applied on a substrate and heat cured. The mesoporous thin ... 05/04/06 - 20060094258 - Cyclic olefin polymers and catalyst for semiconductor applications An embodiment is a cyclic olefin semiconductor package. Further an embodiment is a combination of a cyclic olefin monomer and a ruthenium-based catalyst that is stable at approximately room temperature and humidity for extended storage life and pot life, and that can be screen printed or valve/jet deposited. ... 03/30/06 - 20060068602 - Electronic device having organic material based insulating layer and method for fabricating the same In an electronic device, insulating layers (24, 26 and 28) on metal conductors (23 and 27) situated inside the device are formed of insulating layers made of a novolac resin, and an insulating layer made of a polyimide resin is used as an insulating layer (30) covering these insulating layers ... 03/23/06 - 20060063393 - Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose ... 02/16/06 - 20060035474 - Increasing retention time for memory devices This disclosure relates to a doped polymer memory device. In one aspect the doped polymer memory device includes a molecularly doped polymer layer that includes a binder and a dopant. The combination of the binder and the dopant modifies polarizability of the molecularly doped polymer layer in a manner that ... 02/02/06 - 20060024977 - Low dielectric constant carbon films Diamond and non-diamond composite film may be exposed to oxygen plasma to gasify the non-diamond forms of carbon, leaving porosity in the resulting structure. In some cases, highly desirable dielectric materials may be formed with high dielectric constants and good mechanical strength. ... 01/05/06 - 20060003600 - Contact planarization for integrated circuit processing A method to form substantially planarized layers on a substrate. In an implementation, the method includes depositing a fluid material having at least one gap control bead onto a surface of the substrate, pressing a contact planarizer into the fluid material with a force sufficient to planarize at least a ... 12/29/05 - 20050287821 - Wafer processing system, coating/developing apparatus, and wafer, processing apparatus In a coating and developing apparatus that forms a resist film on substrates such as semiconductor wafers, and develops substrates exposed by an aligner, times after the aligner unloads substrates until heating units (PEB) start heating the substrates are kept uniform. Exposed wafers are prevented from being left stagnant in ... 12/29/05 - 20050287820 - Mold for nano imprinting A metal mold for use in a nano-imprinting process comprises a firmly adhering monomolecular non-sticking layer. The later was obtained by subjecting the mold to a reaction with a fluoroalkyl compound having a mercapto group. As a result of said reaction, the layer comprises an organic sulfide of said metal. ... 12/22/05 - 20050282402 - Resist for forming pattern and method for forming pattern using the same A method for forming a pattern includes forming an etching object layer on a substrate, applying a resist on an etching object layer, the resist including a photo-initiator, and a liquid pre-polymer including a vinyl functional group and a hydrophilic functional group, shaping the resist using a mold plate having ... 12/22/05 - 20050282401 - Zeolite films for low k applications A method is provided for making an integrated circuit dielectric. A structure-directing agent (SDA) is provided. Preferably this structure-directing agent is a salt of a polycyclic organic compound. By use of the structure-directing agent, a film of a zeolite having a framework density below 15 T atoms per 1000 cubic ... 12/15/05 - 20050277303 - Forming porous diamond films for semiconductor applications The porosity of a diamond film may be increased and its dielectric constant lowered by exposing a film containing sp3 hybridization to ion implantation. The implantation produces a greater concentration of sp2 hybridizations. The sp2 hybridizations may then be selectively etched, for example, using atomic hydrogen plasma to increase the ... 12/01/05 - 20050266699 - Organosilicate polymer and insulating film therefrom Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare ... 11/17/05 - 20050255710 - Porous materials Porous thermoset dielectric materials having low dielectric constants useful in electronic component manufacture are provided along with methods of preparing the porous thermoset dielectric materials. Also provided are methods of forming integrated circuits containing such porous thermoset dielectric material. ... 11/17/05 - 20050255709 - Method for manufacturing semiconductor device High quality dielectric layers may be achieved without introducing excessive impurities when a semiconductor device is manufactured by a method that includes forming a lower wire layer on a structure above a semiconductor substrate, forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on the lower wire ... 11/03/05 - 20050245097 - Method for synthesizing polymeric material, method for forming polymer thin film and method for forming interlayer insulating film A Lewis acid-base reaction is caused, in a solution, between a first monomer corresponding to a Lewis acid and a second monomer corresponding to a Lewis base, so as to generate a monomer adduct in which the first monomer and the second monomer are bonded to each other through weak ... 10/27/05 - 20050239296 - Top arc polymers, method of preparation thereof and top arc compositions comprising the same wherein R1, R2 and R3 are independently hydrogen or a methyl group; and a, b and c represent the mole fraction of each monomer, and are in the range between 0.05 and 0.9. The top anti-reflective coating formed using the anti-reflective coating polymer is not soluble in water and can ... 10/27/05 - 20050239295 - Chemical treatment of material surfaces A method for treating the surfaces of materials to improve wettability and adhesion of subsequently deposited polymer layers is disclosed. Suitable materials for practice of the method include polymeric materials and silicon-containing materials is disclosed. The method involves contacting at least a portion of the surface of the material with ... 10/20/05 - 20050233597 - Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking ... 10/20/05 - 20050233596 - Self-aligned coating on released mems A method of making a semiconductor device including the steps of fabricating at least one component on a substrate and coating the component with a first self-aligned polymer film. ... 10/06/05 - 20050221627 - Method for producing optical film The present invention relates to a method for producing an optical film, the optical film having the same molecule length in X-axis, Y-axis and Z-axis orientation, comprising the steps of: stretching the optical film along the X-axis; fixing the length of the optical film along the Y-axis; heating the optical ... 09/15/05 - 20050202685 - Adhesion improvement for low k dielectrics Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon ... 09/08/05 - 20050196974 - Compositions for preparing low dielectric materials containing solvents Silica-based materials and films having a dielectric constant of 3.7 or below and compositions and methods for making and using same are disclosed herein. In one aspect, there is provided a composition for preparing a silica-based material comprising an at least one silica source, a solvent, an at least one ... 09/01/05 - 20050191865 - Treatment of a dielectric layer using supercritical co2 A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS) and combinations thereof. In accordance with further ... 08/18/05 - 20050181629 - Fibrillar microstructure and processes for the production thereof This invention relates to a fibrillar microstructure and processes for the manufacture thereof. These processes involve micromachining and molding, and can prepare sub-micron dimensioned fibrillar microstructures of any shape from polymeric as well as other materials. ... 08/04/05 - 20050170665 - Method of forming a high dielectric film A method of forming a high-K dielectric film by the MOCVD method using an amine-based organic metal compound precursor is disclosed. According to the present method, a precursor gas including organic metal compound molecules of the amine-based organic metal compound precursor is supplied to a processing space that accommodates a ... 07/28/05 - 20050164522 - Optical fluids, and systems and methods of making and using the same In part, the present invention is directed towards a fluid composition, and systems and methods of making and using the same, wherein the fluid composition has an absorbance of less than about 2 cm−1. ... 07/21/05 - 20050159016 - Electron exposure to reduce line edge roughness The present invention describes a method including providing a substrate; forming a photoresist on the substrate; performing a post-apply bake on the photoresist; exposing the photoresist to actinic radiation; performing a post-exposure bake on the photoresist; developing the photoresist; and performing electron exposure on the photoresist to reduce line edge ... 07/07/05 - 20050148204 - Method and system of coating polymer solution on surface of a substrate A method and system of coating a polymer solution on a substrate such as a semiconductor wafer. The method includes providing a substrate. Dispensing a polymer solution onto the surface of the substrate using a pump. The pump is connected in-line with a buffer tank and a polymer solution source ... 07/07/05 - 20050148203 - Method, apparatus, system and computer-readable medium for in situ photoresist thickness characterization An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer ... 06/30/05 - 20050142894 - Electronic device, method, monomer and polymer The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material ... 06/16/05 - 20050130447 - Composite dielectric material, composite dielectric substrate, prepreg, coated metal foil, molded sheet, composite magnetic substrate, substrate, double side metal foil-clad substrate, flame retardant substrate, polyvinylbenzyl ether resin composition, an A composite dielectric material comprising a resin resulting from a polyvinylbenzyl ether compound and a dielectric ceramic powder dispersed therein is useful in the high-frequency region. A composite magnetic material comprising a polyvinylbenzyl ether compound and a magnetic powder is also provided as well as a flame retardant material comprising ... 06/16/05 - 20050130446 - Composite dielectric material, composite dielectric substrate, prepreg, coated metal foil, molded sheet, composite magnetic substrate, substrate, double side metal foil-clad substrate, flame retardant substrate, polyvinylbenzyl ether resin composition, th A composite dielectric material comprising a resin resulting from a polyvinylbenzyl ether compound and a dielectric ceramic powder dispersed therein is useful in the high-frequency region. A composite magnetic material comprising a polyvinylbenzyl ether compound and a magnetic powder is also provided as well as a flame retardant material comprising ... 06/16/05 - 20050130445 - Substrate processing method and substrate processing apparatus The wafer coated with the resist is deliberately placed in the vapor before being transferred to an aligner that exposes the resist on the wafer, the vapor, for example, the moisture, uniformly adheres onto the resist on the wafer. As a result, the substrate can uniformly be exposed in the ... 06/16/05 - 20050130444 - Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are ... 06/16/05 - 20050130443 - Process for laminating a dielectric layer onto a semiconductor This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor. ... 06/09/05 - 20050124173 - Method for manufacturing device A method for manufacturing a device where an improvement of etching accuracy and curtailing of manufacturing costs are realized when a device is manufactured attended with etching, such as RIE, in which a device; i.e., an object of etching, evolves heat. The method includes a coating step of applying over ... 06/09/05 - 20050124172 - Process for making air gap containing semiconducting devices and resulting semiconducting device A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers ... ### FreshPatents.com Support |