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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Insulative Material Deposited Upon Semiconductive Substrate Insulative Material Deposited Upon Semiconductive SubstrateInsulative Material Deposited Upon Semiconductive Substrate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087580 - Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same In one aspect, a composition is provided which is capable of removing an insulation material which includes at least one of a low-k material and a passivation material. The composition of this aspect includes about 5 to about 40 percent by weight of a fluorine compound, about 0.01 to about ... 04/19/07 - 20070087579 - Semiconductor device manufacturing method A semiconductor device manufacturing method by which a process chamber can be self-cleaned, while keeping a temperature in the process chamber low or a semiconductor device manufacturing method by which a high-k film adhering in the process chamber can be effectively removed. The method is provided with a pre-coat process, ... 04/12/07 - 20070082506 - Multi-step annealing process A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process ... 04/12/07 - 20070082505 - Method of forming an electrically insulating layer on a compound semiconductor A method of forming an electrically insulating layer (130) on a compound semiconductor (110) comprises: providing a compound semiconductor structure; preparing an upper surface (111) of the compound semiconductor structure to be chemically clean; forming a template (120) on the compound semiconductor structure using a first precursor in a metalorganic ... 04/12/07 - 20070082504 - Pre-metal dielectric semiconductor structure and a method for depositing a pre-metal dielectric on a semiconductor structure The invention refers to a pre-metal dielectric semiconductor structure comprising a substrate, having features on a surface of the substrate, wherein the features are spaced from at least one gap between the features. The gap is filled with an advantageous layer combination. The layer combination comprises at least one spin-on ... 04/12/07 - 20070082503 - Method of fabricating a dielectric layer A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process ... 04/05/07 - 20070077779 - Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material ... 04/05/07 - 20070077778 - Method of forming low dielectric constant layer Dielectric layers having a low dielectric constant are fabricated by using an asymmetric organocyclosiloxane as a precursor gas. The carbon content of the deposited layer is reduced to less than about 50 percent by use an oxidizing agent, a silicon containing compound, or a combination thereof. ... 04/05/07 - 20070077777 - Method of forming a silicon oxynitride film with tensile stress A method for forming a densified silicon oxynitride film with tensile stress and a semiconductor device including the densified silicon oxynitride film. The densified silicon oxynitride film can be formed by depositing a porous SiNC:H film on a substrate in a LPCVD process, and exposing the porous SiNC:H film to ... 04/05/07 - 20070077776 - Method for forming an insulating film in a semiconductor device This invention provides a method for forming a semiconductor device, capable of preventing as many impurities as possible, which cause deterioration in film quality, from existing in an gate insulating film. In this invention, a step of forming an insulating film so as to have a thickness in the range ... 03/22/07 - 20070066085 - Method of fabricating dielectric layer A method of fabricating a dielectric layer is described. A twelve-inch wafer having at least three metallic layers thereon is provided. A dielectric layer is formed over the twelve-inch wafer by performing a high-density plasma process. The high-density plasma process includes applying a total bias radio frequency (RF) power and ... 03/15/07 - 20070059945 - Atomic layer deposition with nitridation and oxidation A dielectric layer is created for use with non-volatile memory and/or other devices. The dielectric layer is created using atomic layer deposition to deposit multiple components whose mole fractions change as a function of depth in the dielectric layer in order to create a rounded bottom of a conduction band ... 03/08/07 - 20070054499 - Apparatus and method for forming polycrystalline silicon thin film Apparatus and method for forming a polycrystalline silicon thin film by converting an amorphous silicon thin film into the polycrystalline silicon thin film using a metal are provided. The method includes: a metal nucleus adsorbing step of introducing a vapor phase metal compound into a process space where the glass ... 03/01/07 - 20070049051 - Atomic layer deposition of zrx hfy sn1-x-y o2 films as high k gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of ZrXHfYSn1-X-YO2, and a method of fabricating such a dielectric layer is described that produces a reliable structure ... 02/22/07 - 20070042610 - Method of depositing low k barrier layers A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications ... 02/22/07 - 20070042609 - Molecular caulk: a pore sealant for ultra-low k dielectrics Methods of use of parylene based polymers with porous ultra-low κ dielectric materials and use of parylene barriers in integrated circuit fabrication are presented. ... 02/15/07 - 20070037409 - Composite dielectric forming methods and composite dielectrics A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a ... 02/15/07 - 20070037408 - Method and apparatus for plasma processing A plasma processing method using an apparatus including an electrode unit configured by providing a dielectric layer on a surface of a metal substrate having a surface defining a plurality of through holes and by superimposing a plurality of the metal substrates so that the through holes coincide, the method ... 02/08/07 - 20070032094 - Energy beam treatment to improve packaging reliability The present invention provides a process for improving the hardness and/or modulus of elasticity of a dielectric layer and a method for manufacturing an integrated circuit. The process for improving the hardness and/or modulus of elasticity of a dielectric layer, among other steps, includes providing a dielectric layer having a ... 02/08/07 - 20070032093 - Structure and method of forming a semiconductor material wafer A structure and method of forming a semiconductor material wafer comprising forming an ingot of semiconductor material. A first dielectric layer is formed on the surface of the ingot, and the surface of the first dielectric layer is larger than the surface of the ingot. A 5 second dielectric layer ... 02/01/07 - 20070026688 - Method of forming a zro2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrO2 thin film and a method of fabricating ... 01/25/07 - 20070020955 - Fabrication method of composite metal oxide dielectric film, and composite metal oxide dielectric film fabricated thereby The invention relates to a fabrication method of a composite metal oxide dielectric film containing at least two metallic elements on a substrate, and a composite metal oxide dielectric film fabricated thereby. The method includes: forming an amorphous film containing at least one of the metallic elements; preparing a hydrothermal ... 01/25/07 - 20070020954 - Method for manufacturing semiconductor optical device using inductive coupled plasma-enhance cvd The present invention provides a semiconductor laser diode prevents not only the adhesion of the upper electrode but the heat dissipation of the mesa from degrading. The laser diode includes a substrate, portion of which forms a mesa including an active layer, an insulating layer formed so as to bury ... 01/25/07 - 20070020953 - Method for forming a high density dielectric film by chemical vapor deposition A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate, wherein the first gas comprises silicon-containing ... 01/25/07 - 20070020952 - Repairing method for low-k dielectric materials A method of forming a low-k dielectric layer and forming a structure in the low-k dielectric layer includes depositing a low-k dielectric layer over a substrate, performing a first treatment to the low-k dielectric layer, performing post-formation processes, and performing a second treatment to the low-k dielectric layer. The k ... 01/25/07 - 20070020951 - Fluorocarbon film and method for forming same The major objective is to provide a fluorocarbon film wherein fine voids are formed by a step (SA1) for introducing a mixed gas containing a first carbon fluoride gas and a second carbon fluoride gas on a substrate placed inside a chamber, and depositing a fluorocarbon film on the substrate; ... 01/04/07 - 20070004227 - Semiconductor processing methods In one aspect, the invention encompasses a semiconductor processing method. A layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the ... 01/04/07 - 20070004226 - Strain control of epitaxial oxide films using virtual substrates A method of controlling strain in a single-crystal, epitaxial oxide film, includes preparing a silicon substrate; forming a silicon alloy layer taken from the group of silicon alloy layer consisting of Si1-xGex and Si1-yCy on the silicon substrate; adjusting the lattice constant of the silicon alloy layer by selecting the ... 01/04/07 - 20070004225 - Low-temperature catalyzed formation of segmented nanowire of dielectric material The present invention discloses a method of forming a segmented nanowire including: providing a substrate; pre-cleaning the substrate; pre-treating the substrate; forming and placing a catalyst over the substrate; and forming the segmented nanowire over the catalyst with recurring pulses of plasma-enhanced chemical vapor deposition (PECVD) of a dielectric material. ... 01/04/07 - 20070004224 - Methods for forming dielectrics and metal electrodes A method for forming a semiconductor structure, the method including forming in a processing chamber a dielectric layer over a substrate; and subsequently forming, in the same processing chamber and without removing the substrate therefrom, an electrode layer directly over and in contact with the dielectric layer. ... 12/28/06 - 20060292891 - Cascade source and a method for controlling the cascade source A cascade source includes a cathode housing, a number of cascade plates insulated from each other and stacked on top of each other which together bound at least one plasma channel, and an anode plate provided with an outflow opening connecting to the plasma channel. One cathode is provided per ... 12/14/06 - 20060281331 - Charge trapping dielectric structure for non-volatile memory An integrated circuit structure comprises a bottom dielectric layer on a substrate, a middle dielectric layer, and a top dielectric layer. The middle dielectric layer has a top surface and a bottom surface, and comprises a plurality of materials. Respective concentration profiles for at least two of the plurality of ... 12/14/06 - 20060281330 - Iridium / zirconium oxide structure Embodiments of an electronic apparatus and embodiments for methods of forming the electronic apparatus include a conductive layer having an iridium-based layer, where the conductive layer is disposed on a dielectric layer containing zirconium oxide. In various embodiments, each of the zirconium oxide layer and the iridium-based layer may be ... 12/14/06 - 20060281329 - Sealing porous dielectric material using plasma-induced surface polymerization A method for sealing a porous dielectric layer atop a substrate, wherein the dielectric layer is patterned to form at least a trench and at least a via, comprises applying a first plasma to a surface of the dielectric layer to silanolize the surface, treating the surface of the dielectric ... 11/30/06 - 20060270247 - Hi-k dielectric layer deposition methods Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising a high dielectric constant (Hi-K) dielectric precursor and an oxygen (O2) oxidant into the process chamber to form a first portion of ... 11/23/06 - 20060264064 - Zirconium-doped tantalum oxide films Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer is arranged as a structure of one or more monolayers of tantalum oxide doped with zirconium, provide an insulating layer in a variety of structures for use in a wide range of electronic devices. ... 11/16/06 - 20060258172 - Methods for forming an enriched metal oxide surface Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided. ... 11/02/06 - 20060246740 - Removal of charged defects from metal oxide-gate stacks The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in forming a pFET device, has a threshold voltage substantially within the silicon band gap and good ... 10/19/06 - 20060234517 - Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted ... 10/12/06 - 20060228905 - Method for conditioning a microelectronics device deposition chamber The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber 100. This method comprises placing an undercoat on the walls of a deposition chamber 100 and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted ... 10/12/06 - 20060228904 - Protection of silicon from phosphoric acid using thick chemical oxide A method for protecting exposed silicon from attack by phosphoric acid during wet etching and stripping processes is provided. According to various embodiments of the method, a thick chemical oxide layer can be formed on the exposed silicon to protect the exposed portion from etching by phosphoric acid. The method ... 10/12/06 - 20060228903 - Precursors for the deposition of carbon-doped silicon nitride or silicon oxynitride films A process for fabricating carbon doped silicon nitride layers is described. By adjusting the amount of carbon in adjacent regions, selective etching of the silicon nitride regions can occur. Several precursors for the introduction of carbon into the silicon nitride film, are described. ... 09/28/06 - 20060216951 - Method of making an encapsulated sensitive device A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack ... 09/21/06 - 20060211267 - Silicon oxide thin-films with embedded nanocrystalline silicon A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate, using a high-density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, the SiOx thin-film is ... 09/21/06 - 20060211266 - Semiconductor constructions comprising particle-containing materials The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second ... 09/21/06 - 20060211265 - Method for forming a multiple layer passivation film and a device incorporating the same A method of forming a multiple layer passivation film on a semiconductor device surface comprises placing a semiconductor device in a chemical vapor deposition reactor, introducing a nitrogen source into the reactor, introducing a carbon source into the reactor, depositing a layer of carbon nitrogen on the semiconductor device surface, ... 09/21/06 - 20060211264 - Field effect transisfor, associated use, and associated production method A vertical field-effect transistor having a semiconductor layer, in which a doped channel region is arranged along a depression. A “buried” terminal region leads as far as a surface of the semiconductor layer. The field-effect transistor also has a doped terminal region near an opening of the depression as well ... 09/14/06 - 20060205233 - Method for manufacturing a semiconductor device There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having ... 09/14/06 - 20060205232 - Film treatment method preventing blocked etch of low-k dielectrics A method for etching a dielectric material in a semiconductor device is disclosed. After providing a conductive region, a dielectric layer is formed over the conductive region. A dielectric antireflective coating (DARC) layer is further formed on the dielectric layer. Then, a moisture-removal step is performed that removes moisture from ... 09/07/06 - 20060199396 - Method of passivating semiconductor device In a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one ... 08/31/06 - 20060194447 - Plasma treatment of an etch stop layer A method of manufacturing an etch stop layer 18, 20, 21 on a semiconductor wafer 2 and the etch stop layer 18, 20, 21 produced by the method. The method includes depositing a dielectric layer 18, 20, 21 and applying a plasma treatment to the semiconductor wafer 2. Also, an ... 08/24/06 - 20060189159 - Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing ... 08/24/06 - 20060189158 - Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing ... 08/24/06 - 20060189157 - Method for forming an integrated circuit semiconductor substrate An integrated circuit semiconductor substrate includes an active silicon layer separated from a silicon substrate layer by a buried insulating material layer. The active silicon layer, however, locally includes at least one over-thickness on the side of the buried layer, while maintaining a flat surface state of the semiconductor layer ... 08/24/06 - 20060189156 - Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer that contacts a metal oxide layer. The metal oxide layer is generated by forming a metal layer, then oxidizing the metal layer. ... 08/17/06 - 20060183347 - Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing ... 08/17/06 - 20060183346 - Multilayer anti-reflective coating for semiconductor lithography and the method for forming the same An interconnect structure has a dielectric layer having a dielectric constant less than 3.9 overlying a substrate with a conductive region, a silicon oxycarbide layer overlying the dielectric layer, and a silicon oxynitride layer overlying the silicon oxycarbide layer. A conductive layer is inlaid the silicon oxynitride layer, the silicon ... 08/17/06 - 20060183345 - Advanced low dielectric constant organosilicon plasma chemical vapor deposition films A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and ... 08/10/06 - 20060178017 - Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about ... 08/10/06 - 20060178016 - Silicon carbide-based device contact and contact fabrication method A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can be continuous or patterned, and can be undoped or ... 08/10/06 - 20060178015 - Wet chemical treatment to form a thin oxide for high k gate dielectrics Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms may be formed by two different ... 08/03/06 - 20060172552 - N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner. ... 07/20/06 - 20060160373 - Processes for planarizing substrates and encapsulating printable electronic features Processes for planarizing a substrate, for encapsulating a printed electronic feature and for forming a ramp feature. In various embodiments, the processes include the steps of: (a) applying a planarizing agent, an encapsulating agent or a ramping feature to a substrate or to an electronic feature disposed thereon, preferably through ... 07/06/06 - 20060148271 - Silicon source reagent compositions, and method of making and using same for microelectronic device structure A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different ... 06/29/06 - 20060141806 - Apparatus and process for treating dielectric materials Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and ... 06/22/06 - 20060134927 - Method for forming ultra thin oxide layer by ozonated water The present invention relates to a method for forming an ultra thin oxide layer by using an ozonated water, which comprises the steps of dissolving an ozone-containing gas in deionized water to form an ozonated water, and immersing a silicon wafer in the ozonated water to from an ultra thin ... 06/15/06 - 20060128162 - Process for fabricating a semiconductor device having an rtcvd layer A process of fabricating a semiconductor device includes forming a device region including a non-volatile memory element and forming a utility layer overlying the device region, where the utility layer is a dielectric material formed by RTCVD. The utility layer preferably has a hydrogen content below that necessary to reduce ... 06/08/06 - 20060121742 - Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises applying an atomic layer chemical vapor deposition process to form a high-k gate dielectric layer directly on a hydrophobic surface of a substrate. The atomic layer chemical vapor deposition process initiates growth of the high-k gate dielectric layer ... 06/01/06 - 20060115996 - Method for enhancing fsg film stability A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species ... 06/01/06 - 20060115995 - Electrode insulator and method for fabricating the same An electrode insulator and method for fabricating the same, wherein a T-shape electrode insulator made of inorganic dielectric material is fabricated perpendicular to the first electrode formed on the substrate, and insulating the second electrode from the first electrode. Inorganic films are used twice to form the insulator, and the ... 05/25/06 - 20060110939 - Enhanced thin-film oxidation process A method is provided for additionally oxidizing a thin-film oxide. The method includes: providing a substrate; depositing an MyOx (M oxide) layer overlying the substrate, where M is a solid element having an oxidation state in a range of +2 to +5; treating the MyOx layer to a high density ... 05/25/06 - 20060110938 - Etch stop layer A SiOC layer and/or a SiC layer of an etch stop layer may be improved by altering the process used to form them. In a bi-layer structure, a SiOC layer and/or a SiC layer may be improved to provide better reliability. A silicon carbide (SiC) layer may be used to ... 05/25/06 - 20060110937 - Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that ... 05/25/06 - 20060110936 - Method of increasing deposition rate of silicon dioxide on a catalyst Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide/silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of ... 05/25/06 - 20060110935 - Semiconductor device and manufacturing method thereof A semiconductor device with a fuse 3a to be cut for a circuit modification, of which passivation film coating the uppermost wiring layer is formed in a two-layer structure including a first insulating film 11 with high filling capability and a second insulating film 12 blocking penetration of moisture or ... 05/25/06 - 20060110934 - Method and apparatus for forming insulating film The present invention provides a method and apparatus for forming an insulating film having good reliability, in accordance with a process without high-temperature heating. In accordance with the present invention, in a process for forming an insulating film for a semiconductor device by oxidizing a material to be processed, exposed ... 05/25/06 - 20060110933 - Plasma control method and plasma control apparatus A method that controls the distribution of a plasma generated in a vacuum chamber, for example as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the variations of the film deposition conditions. ... 05/11/06 - 20060099827 - Photo-enhanced uv treatment of dielectric films A dielectric or oxide layer, such as a thin gate oxide, is formed by supplying a wafer in a processing chamber with thermal energy to heat the wafer and light energy, such as ultraviolet light, to improve the quality of the resulting layer. ... 05/04/06 - 20060094257 - Low thermal budget dielectric stack for sonos nonvolatile memories A method of forming an oxide-nitride-oxide (ONO) structure for use in a non-volatile memory cell, which includes (1) forming a first oxide layer over a substrate, (2) forming a silicon nitride layer over the first oxide layer, (3) introducing oxygen into a top interface of the silicon nitride layer, and ... 05/04/06 - 20060094256 - Using polydentate ligands for sealing pores in low-k dielectrics In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X—CH2—(CH2)n—CH2—X or X—Si(CH3)2—(CH2)n—Si(CH3)2—X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X—CH2—(CH2)m(CXH)(CH2)o—CH2—X or X—Si(CH3)2—(CH2)m(CXH)(CH2)o—Si(CH3)2—X. Alternative embodiments may ... 04/27/06 - 20060089008 - Methods of manufacturing silicon oxide isolation layers and semiconductor devices that include such isolation layers Methods of manufacturing silicon oxide layers for semiconductor devices are provided in which a substrate having a recess is coated with a spin-on-glass film so that the recess is filled with the spin-on-glass film. A main thermal treatment is performed on the spin-on-glass film at about 600 to about 1,000° ... 04/20/06 - 20060084281 - Novel deposition of high-k msion dielectric films This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor ... 04/20/06 - 20060084280 - Method of forming a carbon polymer film using plasma cvd A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, ... 04/20/06 - 20060084279 - Method for forming a multi-layer low-k dual damascene A damascene structure and method for forming the same in a multi-density dielectric insulating layer the method including providing a substrate; forming at least a first layer comprising silicon oxide according to a first process having a first density; forming at least a second layer comprising silicon oxide according to ... 04/13/06 - 20060079098 - Method and system for sealing a substrate A method of sealing a microelectromechanical system (MEMS) device from ambient conditions is described, wherein the MEMS device is formed on a substrate and a substantially hermetic seal is formed as part of the MEMS device manufacturing process. The method comprises forming a metal seal on the substrate proximate a ... 04/13/06 - 20060079097 - Method of forming dielectric layer in semiconductor device A method of forming an insulating film of a semiconductor device is disclosed. Where an insulating film is formed and an annealing process is then performed to remove out-gassing sources contained in the insulating film. Spot-shaped defects and by-products or CH-radicals, which are formed on the surface of the insulating ... 03/23/06 - 20060063392 - Deposition and patterning of boron nitride nanotube ild A method for forming a dielectric layer is disclosed herein. In accordance with the method, a first material is provided (303) which comprises a suspension of nanoparticles in a liquid medium. A dielectric layer is then formed (305) on the substrate from the suspension through an evaporative process. ... 03/09/06 - 20060051977 - Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, ... 03/09/06 - 20060051976 - Nanoporous membrane reactor for miniaturized reactions and enhanced reaction kinetics Reactors and methods for miniaturized reactions having enhanced reaction kinetics. In particular the subject matter is directed to chemical and biological reactions conducted in a nanoporous membrane environment. The subject matter contemplates methods for modifying the kinetics of reactions and devices for conducting reactions having modified kinetics. The subject matter ... 03/09/06 - 20060051975 - Novel deposition of sion dielectric films This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a dielectric film in a single film-forming step using a vapor phase ... 03/02/06 - 20060046521 - Deposition methods using heteroleptic precursors An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption ... 03/02/06 - 20060046520 - Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, ... 03/02/06 - 20060046519 - Method of forming fluorine-doped low-dielectric-constant insulating film A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4 as a silicon source gas, SiF4 as a fluorine source gas, and CO2 as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2 in the range of 0.02 ... 03/02/06 - 20060046518 - Method of increasing deposition rate of silicon dioxide on a catalyst Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide/silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of ... 03/02/06 - 20060046517 - Methods for forming an enriched metal oxide surface for use in a semiconductor device Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor device are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation sate for used in a semiconductor device is also provided. ... 03/02/06 - 20060046516 - Repair of carbon depletion in low-k dielectric films A method of repairing damaged low-k dielectric materials is disclosed. Plasma-based processes, which are commonly used in semiconductor device manufacturing, frequently damage carbon-containing, low-k dielectric materials. Upon exposure to moisture, the damaged dielectric material may form silanol groups. In preferred embodiments, a two-step approach converts the silanol to a suitable ... 03/02/06 - 20060046515 - Micelle-containing composition, thin film thereof, and method for producing the thin film The present invention provides a composition containing micelles that is useful as an optical material, and a method for producing a thin film using the same. The micelle-containing composition comprises at least micelles of an amphipathic block polymer, a polymer precursor and a dispersion medium therefor, the micelles containing a ... 02/02/06 - 20060024976 - Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity ... 02/02/06 - 20060024975 - Atomic layer deposition of zirconium-doped tantalum oxide films A dielectric film containing atomic layer deposited zirconium-doped tantalum oxide and a method of fabricating such a dielectric film produce a reliable dielectric layer for use in a variety of electronic devices. The zirconium-doped tantalum oxide dielectric layer is formed by depositing tantalum by atomic layer deposition onto a substrate ... 01/19/06 - 20060014398 - Method of forming dielectric layer using plasma enhanced atomic layer deposition technique A method of forming a dielectric layer using a plasma enhanced atomic layer deposition technique includes: loading a semiconductor substrate having a three-dimensional structure into a reaction chamber; and repeatedly performing the following steps until a dielectric layer with a desired thickness is formed: supplying a source gas into the ... 01/19/06 - 20060014397 - Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, ... 01/12/06 - 20060009044 - Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying ... 01/05/06 - 20060003599 - Semiconductor device and method for manufacturing same A semiconductor device is provided which is capable of improving its reliability by using a material having a high relative dielectric constant as a material for its gate insulating film, by suppressing degradation of an EOT (Equivalent Oxide Thickness) and by preventing crystallization of the material having a high relative ... 01/05/06 - 20060003598 - Gradient low k material A thin film dielectric layer comprises a top portion and a bottom portion and has density and permittivity characteristics that vary substantially uniformly from the top portion to the bottom portion. Control over the density and/or permittivity is accomplished through varying deposition parameters such as flow rate of constituent process ... 01/05/06 - 20060003597 - Enhanced nitride layers for metal oxide semiconductors The performance of NMOS and PMOS regions of integrated circuits is improved. Embodiments of the invention include forming a first dielectric layer optimized for n-doped regions over the n-doped regions and forming a second dielectric layer optimized for p-doped regions over p-doped regions. ... 12/29/05 - 20050287819 - Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposit ion process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands. ... 12/29/05 - 20050287818 - Material and method for forming low-dielectric-constant film The material contemplated by this invention for the formation of a low-dielectric-constant film contains in all the stereoisomer molecules of 1,3,5,7-tetramethyl cyclotetrasiloxane (TMCTS) not less than 15% and not more than 100% of a stereoisomer having all the four hydrogen atoms forming an Si—H bond fall on the same size ... 12/22/05 - 20050282400 - Method of forming a dielectric film A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps of forming the dielectric film, the dielectric film in an ambient primarily of nitrogen. ... 12/08/05 - 20050272270 - Method for making a semiconductor device with a high-k gate dielectric and metal layers that meet at a p/n junction A method for making a semiconductor device is described. That method comprises modifying a first surface, and forming a high-k gate dielectric layer on an unmodified second surface. ... 11/17/05 - 20050255708 - Thick film dielectric structure for thick dielectric electroluminescent displays An improved smoothing layer for use with a thick film dielectric layer, and improved composite thick film dielectric structure is provided. The smoothing layer is a piezoelectric or ferroelectric material that has a reduced amount of defects. The smoothing layer is formed by the addition of surfactant to a sol ... 11/10/05 - 20050250346 - Process and apparatus for post deposition treatment of low k dielectric materials Methods and apparatus are provided for processing a substrate with an ultraviolet curing process. In one aspect, the invention provides a method for processing a substrate including depositing a silicon carbide dielectric layer on a substrate surface and curing the silicon carbide dielectric layer with ultra-violet curing radiation. The silicon ... 11/10/05 - 20050250345 - Method for fabricating a bottle-shaped deep trench A method for fabricating a bottle-shaped deep trench. The method comprises providing a substrate having a pad layer thereon, etching the pad layer and the substrate to form a deep trench in the substrate, performing an ALD process to form a nonmetal layer on the pad layer and on an ... 11/03/05 - 20050245096 - Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that ... 10/27/05 - 20050239294 - Apparatus for depositing a multilayer coating on discrete sheets A tool for depositing multilayer coatings onto a substrate. In one configuration, the tool includes a includes an in-line organic material deposition station operating under at least one of a pressure or temperature controlled environment. In another, it further is of a hybrid design that incorporates both in-line and cluster ... 10/27/05 - 20050239293 - Post treatment of low k dielectric films A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric ... 10/20/05 - 20050233595 - Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of ... 10/13/05 - 20050227499 - Oxide-like seasoning for dielectric low k films A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low ... 10/06/05 - 20050221626 - Chemically and electrically stabilized polymer films A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature ... 09/29/05 - 20050215073 - Wafer supporting member The present wafer supporting member includes a supporting part composed of a planar insulating sheet having a pair of main surfaces, one serving as a mounting surface for mounting a wafer and the other having an adsorption electrode; a resin layer part provided below the adsorption part and a conductive ... 09/29/05 - 20050215072 - Method and system for treating a dielectric film A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a ... 09/15/05 - 20050202684 - Method of manufacturing inorganic nanotube A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), ... 09/08/05 - 20050196973 - Plasma nitriding method Disclosed is a plasma nitriding method by which an ultra-thin oxide-nitride film having a half-value depth of not greater than 0.8 nm can be produced, overcoming various inconveniences involved in conventional plasma nitriding methods. In one preferred form of the present invention, the plasma nitriding method includes the steps of ... 09/08/05 - 20050196972 - Semiconductor component having at least one organic semiconductor layer and method for fabricating the same A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 ... 09/08/05 - 20050196971 - Hardware development to reduce bevel deposition Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow ... 09/08/05 - 20050196970 - Novel deposition of high-k msion dielectric films This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor ... 08/18/05 - 20050181628 - Process for preparing low dielectric constant material wherein at least one of R1 to R6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl ... 08/18/05 - 20050181627 - Method for preparing sic crystal and sic crystal A process for closing hollow-core defects, called micropipes, during growth by CVD of a SiC crystal on a SiC single crystal substrate having hollow-core defects, and a crystal obtained according to the process, by contacting the SiC crystal with a source gas adjusted to a C/Si atom ratio range in ... 08/11/05 - 20050176263 - Process for producing materials for electronic device A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an ... 08/04/05 - 20050170664 - Manufacturing method for strained silicon wafer A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased stepwisely from 5 to 60% at ... 08/04/05 - 20050170663 - He treatment to improve low-k adhesion property A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectric constant material layer ... 07/28/05 - 20050164521 - Zr-sn-ti-o films A dielectric layer containing a Zr—Sn—Ti—O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. In an embodiment, forming the Zr—Sn—Ti—O film on a substrate includes depositing materials of the Zr—Sn—Ti—O film substantially as ... 07/28/05 - 20050164520 - Method for manufacturing semiconductor device It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a method for manufacturing a semiconductor device having a laminated structure by forming an interlayer insulating ... 07/28/05 - 20050164519 - Methods of forming planarized surfaces over semiconductor substrates The invention includes a method of forming a planarized surface over a semiconductor substrate. A substrate is provided which includes a memory array region and a peripheral region proximate the memory array region. The memory array region has a higher average elevational height than the peripheral region. Polysilazane is formed ... 07/21/05 - 20050159015 - Method for forming interlayer insulation film A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ≧3; (2) ... 07/14/05 - 20050153572 - Cvd plasma assisted lower dielectric constant sicoh film A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The ... 07/14/05 - 20050153571 - Nitridation of high-k dielectric films The present invention promotes incorporation of nitrogen (e.g., nitridation) into high-k dielectric films using a low temperature process. Further, the present invention provides an in-situ method; that is formation of the high-k dielectric film and nitridation of the film are carried out in the same process chamber during deposition of ... 07/07/05 - 20050148202 - Method for sealing porous materials during chip production and compounds therefor A compound and method for sealing or protecting porous materials used in semiconductor fabrication, and in particular for protecting the inner walls of trenches or recesses or vias which are present in such materials. Specifically, compounds and the method of use of the compounds in which polymer compounds comprising functional ... 07/07/05 - 20050148201 - Method for forming a low-k dielectric layer for a semiconductor device A method for forming a low-k dielectric layer for a semiconductor device using an ALD process including (a) forming predetermined interconnection patterns on a semiconductor substrate, (b) supplying a first and a second reactive material to a chamber having the substrate therein, thereby adsorbing the first and second reactive materials ... 06/30/05 - 20050142893 - Method for manufacturing semiconductor device The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film even when the time between the formation of the ... 06/30/05 - 20050142892 - Method and structure for fabricating a halftone mask for the manufacture of semiconductor wafers A method for manufacturing a mask for integrated circuit devices. The method includes providing a quartz substrate having a surface and forming a MoSi film overlying the surface of the quartz substrate. The method also includes patterning the MoSi film overlying the quartz substrate to form a mask pattern. A ... 06/23/05 - 20050136686 - Gap-fill method using high density plasma chemical vapor deposition process and method of manufacturing integrated circuit device A method of filling gaps in an integrated circuit device is provided, that is less likely to fill voids and does not cause a lung defect. In one embodiment, a method of manufacturing an integrated circuit device including the gap filling method includes: etching a predetermined area of an integrated ... 06/23/05 - 20050136685 - Chips, and apparatus and method for reaction analysis A chip having a deaerating function and requiring no bonding or welding for forming a channel, and an apparatus and method for the reaction analysis are provided. The chip contains a first substrate, a second substrate having a liquid inlet and a liquid outlet, and an intermediate member having hydro-phobicity ... 06/23/05 - 20050136684 - Gap-fill techniques A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high ... 06/09/05 - 20050124171 - Method of forming trench isolation in the fabrication of integrated circuitry This invention includes methods of forming a phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of forming a phosphorus doped silicon dioxide comprising layer includes positioning a substrate within a deposition chamber. First and second ... 06/09/05 - 20050124170 - Strained semiconductor substrate and processes therefor A method of manufacturing an integrated circuit (IC) can utilizes semiconductor substrate configured in accordance with a trench process. The substrate utilizes trenches in a base layer to induce stress in a layer. The substrate can include silicon. The trenches define pillars on a back side of a bulk substrate ... 06/02/05 - 20050118835 - Lithographic projection apparatus, mirror, method of supplying a protective cap layer, device manufacturing method and device manufactured accordingly A lithographic projection apparatus includes a radiation system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to pattern the beam according to the desired pattern; a substrate table configured to hold a substrate; and a projection system configured to ... 06/02/05 - 20050118834 - Film forming method CVD is performed without damaging a micro-fabricated semiconductor element. An organic material gas containing amine is used as deposition material gas (6). The material gas (6) is introduced into a vacuum chamber (3) and ultraviolet light radiated from each of lamps (2) is applied onto an object (5) to be ... ### FreshPatents.com Support |