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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > By Reaction With Substrate > Reaction With Silicon Semiconductive Region (e.g., Oxynitride Formation, Etc.) Reaction With Silicon Semiconductive Region (e.g., Oxynitride Formation, Etc.)Reaction With Silicon Semiconductive Region (e.g., Oxynitride Formation, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.12/21/06 - 20060286812 - Modification of semiconductor surfaces in a liquid Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations of surface states, passivation, cleaning and/or etching of the surface, thereby providing an improved surface to the semiconductor material. Modifications of surface states ... 11/02/06 - 20060246738 - Semiconductor device and method for manufacturing the same A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition ... 10/12/06 - 20060228899 - Semiconductor memory device and method for manufacturing semiconductor device After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. ... 10/12/06 - 20060228898 - Method and system for forming a high-k dielectric layer A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. ... 09/21/06 - 20060211262 - Methods of laterally forming single crystalline thin film regions from seed layers A method of forming an integrated circuit can be provided by successively laterally forming single crystalline thin film regions from an amorphous thin film using a lower single crystalline seed layer. ... 09/14/06 - 20060205230 - Surface preparation prior to deposition Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for ... 06/15/06 - 20060128161 - Film formation method and apparatus for semiconductor process A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride ... 09/22/05 - 20050208775 - Method for growing a gate oxide layer on a silicon surface with preliminary n2o anneal The present invention relates to a method for growing a robust, high-quality gate oxide layer on a silicon surface. The resultant gate oxide layer made according to the present invention can pass the standard 50K times 14V high-voltage stress testing. The preferred embodiment of this invention includes a step of ... 06/16/05 - 20050130440 - Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (pecvd) Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer ... ### FreshPatents.com Support |