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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > By Reaction With Substrate > Implantation Of Ion (e.g., To Form Ion Amorphousized Region Prior To Selective Oxidation, Reacting With Substrate To Form Insulative Region, Etc.) Implantation Of Ion (e.g., To Form Ion Amorphousized Region Prior To Selective Oxidation, Reacting With Substrate To Form Insulative Region, Etc.)Implantation Of Ion (e.g., To Form Ion Amorphousized Region Prior To Selective Oxidation, Reacting With Substrate To Form Insulative Region, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087578 - Ion beam sputtering apparatus and film deposition method for a multilayer for a reflective-type mask blank for euv lithography A film deposition method for a multilayer for a EUV mask blank by which a defect caused by the mixing of a particle in the layer during film formation can be prevented and an ion beam sputtering apparatus suitable for the method are presented. A film deposition method for forming ... 01/25/07 - 20070020949 - Method for manufacturing simox wafer and simox wafer One embodiment of this method for manufacturing a SIMOX wafer includes: while heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer so as to form an ... 12/07/06 - 20060276051 - Oxidation method and oxidation system An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, ... 11/02/06 - 20060246737 - New low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (pecvd) Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer ... 10/05/06 - 20060223335 - Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent ... 09/21/06 - 20060211261 - Method for fabricating a semiconductor device The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted into a surface of a semiconductor substrate such that a germanium-containing layer inside the semiconductor substrate is formed. ... 05/11/06 - 20060099825 - Quantum device, manufacturing method of the same and controlling method of the same By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then, the ... 11/10/05 - 20050250344 - Method for producing an annular microstructure element An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a ... 08/18/05 - 20050181624 - Method of forming quantum dots at predetermined positions on a substrate A method of forming at least one quantum dot on a predetermined area of a substrate includes forming a nucleation site having at least one surface or subsurface defect at the predetermined area of the substrate by implantation with ions, and growing a quantum dot on the nucleation site. ... 07/28/05 - 20050164518 - Oxidation method and oxidation system An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, ... 07/21/05 - 20050159014 - Processing method for annealing and doping a semiconductor A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be ... ### FreshPatents.com Support |