REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > By Reaction With Substrate By Reaction With SubstrateBy Reaction With Substrate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/22/07 - 20070066084 - Method and system for forming a layer with controllable spstial variation A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective radical sources interact with different areas of the substrate surface. The invention suitably improves uniformity of oxidation, ... 10/19/06 - 20060234516 - Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same Provided are compositions for cleaning a semiconductor device that comprises (a) an inorganic acid in an amount ranging from 10 to 90 wt %, (b) a hydrofluoric acid compound in an amount ranging from 0.0001-1 wt %, (c) an additive in an amount ranging from 0-5 wt %, and (d) ... 10/05/06 - 20060223334 - System for controlling a plurality of lot processes, method for controlling a plurality of lot processes and method for manufacturing a semiconductor device A system for controlling lot processes, which are executed in parallel, includes: first and second processing tools processing wafers classified into the lots; a transfer tool transferring the wafers from the first to second processing tools; a recipe storage unit storing recipe data including first and second process periods; a ... 09/28/06 - 20060216948 - Substrate processing system and method for manufacturing semiconductor device An object of the present invention is to completely remove water adhering to a substrate due to cleaning and carry the substrate with the water being removed, to a film forming unit. The present invention is a substrate processing system including: a cleaning unit for cleaning a substrate with a ... 08/24/06 - 20060189155 - Method of forming semiconductor compound film for fabrication of electronic device and film produced by same A process of forming a compound film includes formulating a nano-powder material with a controlled overall composition and including particles of one solid solution The nano-powder material is deposited on a substrate to form a layer on the substrate, and the layer is reacted in at least one suitable atmosphere ... 08/10/06 - 20060178014 - Method of forming film pattern, device, method of manufacturing device, electro-optical device, and electronic apparatus A method of forming a film pattern by disposing functional liquid on a substrate includes: forming banks on the substrate; disposing the functional liquid in regions partitioned by the banks; and drying the functional liquid disposed on the substrate. The forming of the banks includes forming a thin film on ... 08/10/06 - 20060178013 - Method of forming film pattern, device, method of manufacturing device, electro-optical device, and electronic apparatus A method of forming a film pattern by disposing functional liquid on a substrate includes: forming banks on the substrate; disposing the functional liquid in regions partitioned by the banks; and drying the functional liquid disposed on the substrate. A material for forming the banks contains one of polysilazane, polysilane, ... 08/10/06 - 20060178012 - Method of forming semiconductor compound film for fabrication of electronic device and film produced by same A process of forming a compound film includes formulating a nano-powder material with a controlled overall composition and including particles of one solid solution The nano-powder material is deposited on a substrate to form a layer on the substrate, and the layer is reacted in at least one suitable atmosphere ... 05/18/06 - 20060105580 - Method and apparatus for thermally processing microelectronic workpieces An apparatus for thermally processing a microelectronic workpiece is provided. The apparatus comprises a rotatable carousel assembly configured to support at least one workpiece. A driver is coupled to the carousel assembly and rotates the carousel assembly, moving the workpiece between a loading station, a heating station and a cooling ... 05/04/06 - 20060094253 - Semiconductor memory devices and methods for making the same Methods for making memory devices are disclosed for forming germanium nanocrystals in an oxynitride layer. The method includes: forming a first dielectric layer over a substrate; forming an oxynitride layer containing germanium nanocrystals over the first dielectric layer; forming a second dielectric layer over the oxynitride layer; forming a gate ... 03/16/06 - 20060057859 - Buffer layer for selective sige growth for uniform nucleation Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are disclosed. ... 03/16/06 - 20060057858 - Method for oxidation of a layer and corresponding holder device for a substrate A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to ... 02/09/06 - 20060030163 - Methods, complexes, and system for forming metal-containing films A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems. ... 12/01/05 - 20050266698 - Exposed pore sealing post patterning Methods and structures having pore-closing layers for closing exposed pores in a patterned porous low-k dielectric layer, and optionally a reactive liner on the low-k dielectric. A first reactant is absorbed or retained in exposed pores in the patterned dielectric layer and then a second reactant is introduced into openings ... 11/10/05 - 20050250343 - Method of manufacturing a semiconductor device An insulation layer containing bonds of Si—N may be formed on a substrate. An electrode may be formed on the insulation layer. The substrate and the insulation layer exposed by the electrode may be treated with free radicals, which may improve the insulation capacity of the insulation layer and/or partially ... ### FreshPatents.com Support |