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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Multiple Layers > Layers Formed Of Diverse Composition Or By Diverse Coating Processes Layers Formed Of Diverse Composition Or By Diverse Coating ProcessesLayers Formed Of Diverse Composition Or By Diverse Coating Processes patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082501 - Novel integrated circuit support structures and their fabrication A method of fabricating an electronic substrate comprising the steps of; (A) selecting a first base layer; (B) depositing a first etchant resistant barrier layer onto the first base layer; (C) building up a first half stack of alternating conductive layers and insulating layers, the conductive layers being interconnected by ... 03/15/07 - 20070059942 - Plasma cvd process for manufacturing multilayer anti-reflection coatings A plasma chemical vapor deposition (CVD) process for the production of a multilayer anti-reflection coating on substrates (especially on substrates with curved or uneven surface) is disclosed. The CVD process utilizes free radical plasma to form the multilayer anti-reflection coating in order to achieve necessary coating thickness uniformity. ... 11/23/06 - 20060264062 - Method using teos ramp-up during teos/ozone cvd for improved gap-fill Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an ... 09/28/06 - 20060216947 - Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer deposition in a second batch type apparatus, wherein the second ... 09/28/06 - 20060216946 - Method of fabricating a semiconductor device An intermediate film 222 in a three-layered resist film 225 is formed by the chemical vapor deposition process at a temperature not higher than 300° C., using Si(OR1)(OR2)(OR3)(OR4) , where each of R1, R2, R3 and R4 independently represents a carbon-containing group or a hydrogen atom, excluding the case where ... 09/21/06 - 20060211260 - Pitch reduced patterns relative to photolithography features Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the ... 09/14/06 - 20060205228 - Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with ... 09/14/06 - 20060205227 - Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with ... 09/14/06 - 20060205226 - Structure and method for forming semiconductor wiring levels using atomic layer deposition A method for forming a conductive wire structure for a semiconductor device includes defining a mandrel on a substrate, forming a conductive wire material on the mandrel by atomic layer deposition, and forming a liner material around the conductive wire material by atomic layer deposition. ... 08/24/06 - 20060189154 - Atomic layer deposition of hf3n4/hfo2 films as gate dielectrics The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in a variety of electronic devices. Forming the dielectric structure includes depositing ... 07/06/06 - 20060148270 - High density plasma and bias rf power process to make stable fsg with less free f and sin with less h to enhance the fsg/sin integration reliability An embodiment of the invention is a HDP CVD FSG layer and an HDP CVD SIN layer with more stability (e.g., less free F and less free H). A feature is that the FSG and SIN are formed using a HDP CVD process with a high plasma density between 1E12 ... 04/27/06 - 20060089007 - In situ deposition of a low k dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier ... 03/09/06 - 20060051973 - Method for forming imd films A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle. ... 03/09/06 - 20060051972 - Hybrid dielectric film A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor ... 02/09/06 - 20060030162 - Method to avoid threshold voltage shift in thicker dielectric films A method of fabricating an integrated circuit having reduced threshold voltage shift is provided. A nonconducting region is formed on the semiconductor substrate and active regions are formed on the semiconductor substrate. The active regions are separated by the nonconducting region. A barrier layer and a dielectric layer are deposited ... 01/26/06 - 20060019499 - Method of forming passivation layer in semiconductor device Provided is a method of forming a passivation layer of a semiconductor device, using a high density plasma-enhanced chemical vapor deposition (HDPCVD) in order to form an excellent film without a void between metal lines which are being narrower. During the process of HDPCVD that utilizes SiH4 and O2 gas ... 01/12/06 - 20060009043 - Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure Some methods that are provided form a composite dielectric structure on a substrate. A first dielectric layer that includes metal and oxygen is formed on a substrate. A preliminary dielectric layer that includes silicon is formed on the first dielectric layer. A plasma nitriding treatment is performed on the preliminary ... 12/15/05 - 20050277302 - Advanced low dielectric constant barrier layers Methods are provided for depositing a doped barrier layer material having a low dielectric constant. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate by introducing a processing gas comprising an organosilicon compound, at least one dopant containing gas, ... 11/10/05 - 20050250342 - Semiconductor device placing high, medium, and low voltage transistors on the same substrate A method for forming three kinds of MOS transistors on a single semiconductor substrate, each provided with gate oxides different in thickness from each other, without detracting from the device characteristics. The method includes the steps of forming a dielectric layer for device isolation for defining first, second, and third ... 11/10/05 - 20050250341 - Method for manufacturing semiconductor device and substrate processing apparatus To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, ... 11/03/05 - 20050245094 - Method to reduce photoresist pattern collapse by controlled surface microroughening A method is provided for preparing a substrate for photolithographic patterning. The method includes providing a substrate having at least an exposed rough surface layer including a polymeric material. The rough surface layer has surface features characterized by feature step height varying between about two percent and twenty percent of ... 10/06/05 - 20050221623 - Article comprising an oxide layer on a gaas-based semiconductor structure and method of forming same A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor structure to form an interface therewith. A second layer of ... 09/15/05 - 20050202683 - Method of depositing an amorphous carbon film for etch hardmask application Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or ... 09/01/05 - 20050191863 - Semiconductor device contamination reduction in a fluorinated oxide deposition process A method for improving throughput in a semiconductor wafer deposition process in a high density plasma chamber includes processing a first wafer in the high density plasma chamber using a process that includes high power sufficient to burn fluorosilicate glass residue in the chamber. The method further includes removing the ... 07/28/05 - 20050164517 - In-situ-etch-assisted hdp deposition using sif4 A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at ... 07/28/05 - 20050164516 - Method and structure for graded gate oxides on vertical and non-planar surfaces A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3 angstroms. The oxide layer includes a portion that is substantially amorphous and notably dense. The oxide layer is a ... 06/16/05 - 20050130439 - Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated to ... ### FreshPatents.com Support |