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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate > Multiple Layers Multiple LayersMultiple Layers patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072437 - Method for forming narrow structures in a semiconductor device A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered ... 02/01/07 - 20070026687 - Oxygen-rich gas supplying apparatus provided with a condensate removal unit An apparatus for supplying an oxygen-rich gas includes an oxygen-rich gas generating device for generating an oxygen-rich gas; and a condensate removal unit for removing condensates occurring in a transfer line from the oxygen-rich gas. The condensate removal unit has an inlet, an outlet and a drain port and the ... 01/25/07 - 20070020948 - Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers An electronic device of an embodiment of the invention is disclosed that at least partially displays a pixel of a display image. The device includes a first reflector and a second reflector defining an optical cavity therebetween that is selective of a visible wavelength at an intensity. The device includes ... 12/28/06 - 20060292889 - Finfet including a superlattice A semiconductor device may include at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin. The fin may include at least one superlattice including a plurality of stacked groups of layers. Each group of ... 08/24/06 - 20060189153 - Structures with improved interfacial strength of sicoh dielectrics and method for preparing the same A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive ... 07/20/06 - 20060160372 - Method and apparatus for fabricating low-k dielectrics, conducting films, and strain-controlling conformable silica-carbon materials A method for fabricating a semiconductor device having a plurality of layers, depositing a first layer comprising a medium-k dielectric barrier layer on one of the plurality of layers, depositing a second layer comprising a low-k dielectric layer on the first layer, and depositing a third layer comprising a medium-k ... 07/20/06 - 20060160371 - Inhibiting growth under high dielectric constant films Oxidation between a higher dielectric constant material such as a rare earth oxide and a substrate may be reduced by providing a seal layer over the gate dielectric. In some embodiments, the seal layer may be isolated from the gate dielectric by a buffer layer. ... 03/30/06 - 20060068601 - Wafer for compound semiconductor devices, and method of fabrication A wafer for fabrication of nitride semiconductor devices such as LEDs, HEMTs and FETs. The matrices of desired semiconductor devices are grown on a silicon substrate via a buffer region designed to keep the wafer from warping. The buffer region is in the form of alternations of multi-sublayered first buffer ... 03/30/06 - 20060068600 - Method of manufacturing semiconductor device A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the plated film a compressive ... 03/23/06 - 20060063390 - Hdpcvd process and method for improving uniformity of film thickness A high density plasma chemical vapor deposition (HDPCVD) process is disclosed. First, a first deposition step is performed on a wafer. Then, the wafer is rotated with an angle. A second deposition step is performed for completing the deposition. By the rotation of the wafer, the thin film is formed ... 03/16/06 - 20060057857 - Aperture masks for circuit fabrication In various embodiments, the invention is directed to aperture mask deposition techniques for use in creating integrated circuits or integrated circuit elements. In other embodiments, the invention is directed to different apparatuses that facilitate the deposition techniques. The techniques generally involve sequentially depositing material through a number of aperture masks ... 12/22/05 - 20050282399 - Electroformed metallization A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and substrate surface; forming a strike layer overlying the base layer; forming ... 10/20/05 - 20050233594 - Semiconductor device, electro-optic device, integrated circuit, and electronic apparatus A method of manufacturing a semiconductor is provided. The method includes the steps of forming a priming insulation film on a substrate, forming a first insulation film on the priming insulation film, forming an opening with a diameter of d1 in the first insulation film, and forming a second insulation ... 08/25/05 - 20050186805 - Synthesis of layers, coatings or films using collection layer Systems and methods are described for synthesis of films, coatings or layers using templates. A method includes locating a template within at least one of a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a ... 08/18/05 - 20050181623 - Silicon carbide deposition for use as a low dielectric constant anti-reflective coating The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of ... 07/07/05 - 20050148200 - Film forming apparatus, substrate for forming oxide thin film and production method thereof The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output ... 07/07/05 - 20050148199 - Apparatus for atomic layer deposition A trap with a residence time at least equal to one complete cycle time of an atomic layer deposition (ALD) process traps the gaseous effluent from a reaction chamber and reaction products before the effluent can enter a backing pump. The trap may be connected directly to the reaction chamber ... ### FreshPatents.com Support |