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Semiconductor Device Manufacturing: Process > Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor SubstrateCoating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087577 - Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal ... 04/19/07 - 20070087576 - Substrate susceptor for receiving semiconductor substrates to be deposited upon In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a ... 04/19/07 - 20070087575 - Method for fabricating silicon nitride spacer structures Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may ... 04/19/07 - 20070087574 - Conformal doping apparatus and method A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features ... 04/12/07 - 20070082500 - Ti, ta, hf, zr and related metal silicon amides for ald/cvd of metal-silicon nitrides, oxides or oxynitrides wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are ... 04/12/07 - 20070082499 - Photoresist coating apparatus, medium, and method efficiently spraying photoresist A photoresist coating apparatus, medium, and method for efficiently spraying a liquid photoresist to maintain an atmosphere of ionized solvent vapor between a substrate and a spray nozzle of an upper portion by using a vapor inducing pipe supplying ionized solvent vapor, with the atmosphere being maintained by differently biasing ... 04/05/07 - 20070077775 - Deposition of tin films in a batch reactor Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or ... 04/05/07 - 20070077774 - Method for manufacturing a semiconductor device having a stepped contact hole A process for forming a stepped contact hole includes: dry-etching a portion of a silicon oxide film using a mixed gas including carbon-rich fluorocarbon gas to form a first contact hole, forming a specific film on the sidewall of the first contact hole; dry-etching the remaining portion of the silicon ... 04/05/07 - 20070077773 - Technique for creating different mechanical strain in different cpu regions by forming an etch stop layer having differently modified intrinsic stress The present invention provides a technique for reducing stress or stress gradients in highly sensitive device regions, such as cache areas, while still providing high transistor performance in logic areas by correspondingly providing contact etch stop layers with compressive and tensile stress for P-channel transistors and N-channel transistors in these ... 04/05/07 - 20070077772 - Apparatus and method for manufacturing semiconductor device using plasma An apparatus and related manufacturing method for semiconductor devices are disclosed. A plasma generator is used to convert a plasma source into plasma. Plasma particles are then captured in plasma capsules formed from a protective layer, and introduced into a process chamber adapted to form a material layer on a ... 04/05/07 - 20070077771 - Method for producing buried micro-channels and micro-device comprising such micro-channels The invention relates to a method for producing at least one buried micro-channel on a substrate consisting in applying and moving an optic radiation on a stacking in a predetermined direction. The stacking successively comprises a deformable absorbent thin layer and a thin-layer formed by a material able to locally ... 03/22/07 - 20070066082 - Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafer Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by placing a wafer on a susceptor, pretreating under a hydrogen atmosphere, in and then with addition of an etching medium, and coating epitaxially on a polished front side, wherein an etching treatment of the susceptor is effected after ... 03/22/07 - 20070066081 - Catalytic activation technique for electroless metallization of interconnects A method of forming a metal interconnect for an integrated circuit comprises providing a substrate that includes a trench formed in a dielectric layer, employing a first dry thermal process to deposit a barrier layer onto the dielectric layer and within the trench, employing a second dry thermal process to ... 03/08/07 - 20070054498 - Method for applying resin film to face of semiconductor wafer A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having ... 03/08/07 - 20070054497 - Method for preventing contamination and lithographic device The invention relates to a method for preventing contamination of the surfaces of reflective optical elements for the soft X-ray and EUV wavelength range during their irradiation at operating wavelength in an evacuated closed system having a residual gas atmosphere, said elements comprising a cover layer consisting of at least ... 03/01/07 - 20070049046 - Oxide film filled structure, oxide film filling method, semiconductor device and manufacturing method thereof The present invention aims at offering the filled structure of an oxide film etc. which can form an insulating film (oxide film) without void in a predetermined depressed portion by an economical and practical method and without increasing RF bias. According to the first invention, the oxide film filled structure ... 03/01/07 - 20070049045 - Atomic layer deposition method for depositing a layer The invention is related to an ALD method for depositing a layer comprising the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing ... 03/01/07 - 20070049044 - Porous organosilicate layers, and vapor deposition systems and methods for preparing same The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks. ... 03/01/07 - 20070049043 - Nitrogen profile engineering in hi-k nitridation for device performance enhancement and reliability improvement A method and apparatus for forming a nitrided gate dielectric. The method comprises incorporating nitrogen into a dielectric film using a plasma nitridation process to form a nitrided gate dielectric. The first step involves providing a substrate comprising a gate dielectric film. The second step involves inducing a voltage on ... 03/01/07 - 20070049042 - Method of cleaning a wafer A wafer is provided and loaded in a reaction chamber. Subsequently, the wafer is lifted up, and a dry clean process is performed on the wafer to clean the front side, the back side, and the bevel of the wafer. Following that, a deposition process is performed on the wafer. ... 02/15/07 - 20070037406 - Methods of fabricating a semiconductor device using a photosensitive polyimide layer and semiconductor devices fabricated thereby A method of fabricating a semiconductor device includes forming a photo-sensitive polyimide layer on a semiconductor substrate, patterning the photo-sensitive polyimide layer using a mask having a layer for adjusting light transmittance, and forming an epoxy molding compound on the substrate having the photo-sensitive polyimide layer patterns. ... 02/15/07 - 20070037405 - Methods of forming metal-insulator-metal (mim) capacitors with passivation layers on dielectric layers and devices so formed Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed. ... 02/15/07 - 20070037404 - Siox:si composite articles and methods of making same Article are made from silicon oxide and electrically conductive doped silicon materials that are joined in a protective environment to yield a composite SiOx:Si material that exhibits the properties of SiOx and yet is electrically conductive due to the presence of the Si. Articles from such composite materials find many ... 02/15/07 - 20070037403 - Via bottom contact and method of manufacturing same A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via ... 02/15/07 - 20070037402 - Method for manufacturing semi-transparent semi-reflective electrode substrate, reflective element substrate, method for manufacturing same, etching composition used for the method for manufacturing the reflective electrode substrate An etchant for selective etching is used to simplify the production process of a semi-transparent semi-reflective electrode substrate, and temporal loss is not produced by avoiding troublesome repeated works, thereby efficiently providing a semi-transparent semi-reflective electrode substrate. A method for manufacturing a semi-transparent semi-reflective electrode substrate where a metal oxide ... 02/08/07 - 20070032092 - Method for manufacturing semiconductor device having trench A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The epitaxial layer is made of silicon, and the step of filling the trench includes a step of performing a ... 02/08/07 - 20070032091 - Methods and devices for forming nanostructure monolayers and devices including such monolayers Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also ... 02/08/07 - 20070032090 - Plasma rapid thermal process apparatus in which supply part of radical source is improved Disclosed is a plasma rapid thermal process apparatus having an improved plasma supply port for supplying atomic radicals to a rapid thermal process chamber. The supply port includes an inner tube and an outer tube. The inner tube has one end which is opened and connected to the discharge tube ... 01/25/07 - 20070020947 - Method of reducing roughness of a thick insulating layer A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate; treating the first substrate to form a zone of weakness beneath the insulator layer; ... 01/25/07 - 20070020946 - Method for modifying surface of substrate and method for manufacturing semiconductor device An insulating film is formed on a substrate selected from a group containing a BT resin substrate and an epoxy resin substrate. Copper wirings and copper posts including wirings are formed on the insulating film. Plasma processing is effected on exposed surfaces of the insulating film, copper wirings and copper ... 01/25/07 - 20070020945 - Semiconductor processing system and method Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with ... 01/18/07 - 20070015374 - Apparatus and method for atomic layer deposition on substrates A deposition station allows atomic layer deposition (ALD) of films onto a substrate. The station comprises an upper and a lower substantially flat part between which a substrate is accommodated. The parts are positioned opposite each other and parallel to the substrate during processing. At least one of the parts ... 01/18/07 - 20070015373 - Semiconductor device and method of processing a semiconductor substrate A method of processing a semiconductor substrate is provided. The method includes depositing an amorphous hydrogenated carbon film on a semiconductor substrate using a low temperature plasma deposition process and performing at least one high temperature processing step on the semiconductor substrate. The SiC substrate is processed by ion implanting ... 01/11/07 - 20070010102 - Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate A method for forming a semiconductor device includes placing a Si substrate and an Sc2O3 powder source in an oxide chamber, and vaporizing the Sc2O3 powder source in the oxide chamber so as to form a single crystal Sc2O3 film on the Si substrate through electron beam evaporation techniques. ... 01/11/07 - 20070010101 - Use of expanding material oxides for nano-fabrication This invention relates to a method of fabricating nano-dimensional structures, comprising: depositing at least one deformable material upon a substrate such that the material includes at least one portion; and creating an oxidizable layer located substantially adjacent to the deposited deformable material such that at least a portion of the ... 01/04/07 - 20070004221 - Methods for forming material layers with substantially planar surfaces on semiconductor device structures Methods for partially or substantially filling recesses (e.g., capacitor containers, shallow trenches for formation of shallow trench isolation (STI) structures, etc.) That communicate with a surface of the semiconductor device structure include applying material to a surface of the semiconductor device structure and spreading the material. The thickness of the ... 01/04/07 - 20070004220 - Method for manufacturing flat substrates For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13). ... 12/21/06 - 20060286810 - Atomic layer deposition (ald) method and reactor for producing a high quality layer One inventive aspect is related to an atomic layer deposition (ALD) method comprising: a) providing a semiconductor substrate in a reactor, b) providing a pulse of a first precursor gas into the reactor at a first temperature, c) providing a first pulse of a second precursor gas into the reactor ... 12/14/06 - 20060281328 - Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrate A compound semiconductor substrate includes a substrate composed of a p-type compound semiconductor; and a substance containing p-type impurity atoms, the substance being bonded to a surface of the substrate. ... 12/07/06 - 20060276050 - Method for manufacturing crystalline dielectric film,crystalline dielectric film manufactured thereby and thin film capacitor having the same The invention provides a method for manufacturing a crystalline dielectric film by which the crystalline dielectric film can be formed at a low temperature of 300° C. or less. In the manufacturing method of the invention, first, an amorphous dielectric film is formed on a substrate. Then, the amorphous dielectric ... 12/07/06 - 20060276049 - High efficiency trap for deposition process The present invention provides a system, apparatus and method for improving the efficiency of a semiconductor processing system, such as a deposition system by decreasing or substantially eliminating the accumulation of by-products in the apparatus components of the semiconductor processing system. The present invention further relates to improving the efficiency ... 11/30/06 - 20060270244 - Method of fabricating a structure with an oxide layer of a desired thickness on a ge or sige substrate The present invention provides a method of forming a structure produced from semiconductor materials with the structure having a substrate layer and an insulating layer, and the method including the steps of creating the insulating layer involving constituting an oxidizable layer on the substrate layer and oxidizing the oxidizable layer. ... 11/30/06 - 20060270243 - Alignment shield for evaporator used in thin film deposition A system for depositing film includes (1) a substrate holder assembly, (2) a particle source, (3) an alignment shield between the particle source and the substrate holder assembly, and (4) a vacuum chamber for enclosing the substrate holder assembly, the particle source, and the alignment shield. The alignment shield includes ... 11/23/06 - 20060264061 - Solid source precursor delivery system A solid source precursor material is delivered to a deposition chamber in vaporized form by utilizing a solid source precursor delivery system having either single or multiple stations(s) having a collection/delivery reservoir that is an intermediate stage between a solid source reservoir and a processing deposition chamber. Each collection/delivery reservoir ... 11/23/06 - 20060264060 - Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source ... 11/23/06 - 20060264059 - Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is ... 11/16/06 - 20060258170 - Thermal processing unit The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an ... 11/09/06 - 20060252275 - Gas delivery device method for improved deposition of dielectric material A gas delivery device useful in material deposition processes executed during semiconductor device fabrication in a reaction chamber, including the gas delivery device of the present invention and a method for carrying out a material deposition process, including introducing process gas into a reaction chamber using the gas delivery device ... 11/09/06 - 20060252274 - Semiconductor device with spacer having batch and non-batch layers A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality ... 11/09/06 - 20060252273 - Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped ... 11/02/06 - 20060246736 - Methods for making nearly planar dielectric films in integrated circuits In the fabrication of integrated circuits, one specific technique for making surfaces flat is chemical-mechanical planarization. However, this technique is quite time consuming and expensive, particularly as applied to the numerous intermetal dielectric layers—the insulative layers sandwiched between layers of metal wiring—in integrated circuits. Accordingly, the inventor devised several methods ... 10/19/06 - 20060234515 - Film forming method A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of ... 10/19/06 - 20060234514 - Gas distribution showerhead featuring exhaust apertures A method of processing a semiconductor workpiece. The method includes flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate. The method also includes removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality ... 10/12/06 - 20060228897 - Rapid thermal processing using energy transfer layers A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source ... 10/05/06 - 20060223332 - Method of manufacturing semiconductor device A method of manufacturing semiconductor devices includes forming an interlayer insulation film over a semiconductor substrate, the substrate having a first gate structure for a memory cell and a second gate structure for a control transistor, the interlayer insulation film overlying the first and second gate structures; annealing the interlayer ... 10/05/06 - 20060223331 - Method of forming sheet having foreign material portions used for forming multi-layer wiring board and sheet having foreign portions The present invention relates to a laminated type electronic part and aims at providing a sheet manufacturing method and a sheet that contribute to high integration, downsizing and enhancement of reliability of the electronic part. To accomplish this object, the manufacturing method according to the present invention involves forming a ... 09/28/06 - 20060216945 - Methods of depositing materials over semiconductor substrates In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a ... 09/28/06 - 20060216944 - Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy A method and apparatus for forming a nitrided gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via a smooth-varying modulated RF power source to reduce electron temperature spike. Field effect transistor channel mobility and gate leakage current results are improved when the power source ... 08/31/06 - 20060194445 - Semiconductor manufacturing apparatus and method A semiconductor manufacturing apparatus includes a transfer mechanism including a moving part for holding a substrate to be processed and moving along a longitudinal transferring passage and a plurality of processing units for performing respective processes on the substrate. The processing units are disposed along the transferring passage and the ... 08/31/06 - 20060194444 - Patterning method for fabricating high resolution structures Provided is a patterning method capable of fabricating high resolution structures without using a high resolution patterning step. The method comprises the steps of: (i) pre-patterning a layer of material (12) on a substrate (10), (ii) spin-coating a solution of a film-forming substance over the pre-patterned substrate, (iii) drying the ... 08/24/06 - 20060189151 - Method for forming an infrared photodetector with a vertical optical path Provided are a SiGe vertical optical path and a method for selectively forming a SiGe optical path normal structure for IR photodetection. The method comprises: forming a Si substrate surface; forming a Si feature, normal with respect to the Si substrate surface, such as a trench, via, or pillar; and, ... 08/24/06 - 20060189150 - Composition for an organic hard mask and method for forming a pattern on a semiconductor device using the same A composition for the organic hard mask includes a polyamic acid compound, and a method for forming a pattern is used in a manufacturing process of semiconductor devices by coating the composition for organic hard mask film on an underlying layer, and depositing a second hard mask film with a ... 08/24/06 - 20060189149 - Method of smoothening dielectric layer A method of smoothening a dielectric layer. First, a substrate is provided. Next, a dielectric layer is formed on the semiconductor substrate. Finally, the dielectric layer is smoothened by a plasma treatment employing a silane based gas and a nitrogen based gas. ... 08/17/06 - 20060183341 - Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficient A method for fabricating a semiconductor device includes: forming on a substrate a silicon-containing insulation film having a diffusion coefficient of about 250 μm2/min or less as measured using isopropyl alcohol, by plasma reaction using a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing plural ... 08/17/06 - 20060183340 - Coating and developing apparatus and coating and developing method A coating and developing apparatus comprises a process block which includes a unit block for coating-film formation which applies a resist, and a unit block for development which performs a developing process, and is separately provided with a coating-film-formation-unit-block transfer mechanism and a developing-process-unit-block transfer mechanism. After a substrate after ... 08/17/06 - 20060183339 - Stressed semiconductor using carbon and method for producing the same A stressed semiconductor using carbon is provided. At least one carbon layer containing diamond is formed either below a semiconductor layer or above a semiconductor device. The carbon layer induces stress in the semiconductor layer, thereby increasing carrier mobility in the device channel region. The carbon layer may be selectively ... 08/03/06 - 20060172549 - Method of separating a mold from a solidified layer disposed on a substrate The present invention is directed towards a method of separating a mold, included in a template, from a layer disposed on a substrate, the method including, inter alia, applying a separation force to the template to separate the template from the layer; and facilitating localized deformation in the substrate to ... 07/20/06 - 20060160370 - Solid material gasification method, thin film formation process and apparatuses Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a ... 07/20/06 - 20060160369 - Method of fabricating semiconductor electric heating film Disclosed is method of fabricating semiconductor heater film which is formed on a substrate with excellent heat resistant and electrical insulation property by depositing atomized particles of coating material essentially formed of powdered metallic (Sn,V) chlorides and silicide mixed with one of Fe, Sb or In compound and solvent such ... 07/06/06 - 20060148269 - Semiconductor devices and methods for depositing a dielectric film Embodiments provide methods and apparatuses for chemical vapor depositing a dielectric film, and various structures, devices, and systems, which incorporate dielectric elements formed from the dielectric film. The method includes heating a chamber, within which a substrate is located, to a temperature sufficient to thermally decompose an oxidizing component. A ... 07/06/06 - 20060148268 - In-situ thin-film deposition method Provided is an in-situ thin-film deposition method in which a TiSix/Ti layer or TiSix/Ti/TiN layer can be continuously deposited. The method serves to deposit a thin layer as a resistive contact and barrier on a loaded wafer and is performed in a thin-film deposition apparatus including a transfer chamber having ... 06/29/06 - 20060141805 - Method of depositing dielectric films A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer ... 06/29/06 - 20060141804 - Method and apparatus to facilitate electrostatic discharge resiliency A circuit element (such as an asperity sensor circuit (11)) as is formed (21) using semiconductor fabrication processing has a high resistance layer formed (22) thereover. The high resistance layer is preferably formed using semiconductor fabrication processing. The high resistance layer can be comprised of a variety of materials and ... 06/22/06 - 20060134924 - Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of ... 06/08/06 - 20060121741 - Device for supplying a solution onto a substrate and method for supplying the solution onto the substrate by using the same In a device for supplying a solution onto a substrate and a method for supplying the solution onto the substrate, the device includes a first nozzle supplying a thinner onto a substrate, a second nozzle supplying a photoresist composition onto the substrate, a first pipe connected to the first nozzle, ... 06/08/06 - 20060121740 - Semiconductor integrated circuit device and method for fabricating the same After forming a silicon oxide film 9 on the surface of a region A of a semiconductor substrate 1, a high dielectric constant insulating film 10, a silicon film, a silicon oxide film 14 are successively deposited over the semiconductor substrate 1, and they are patterned to leave the silicon ... 06/01/06 - 20060115992 - Coating apparatus, coating method and coating-film forming apparatus A coating apparatus is provided in which a coating liquid supplied onto a surface of a substrate such as a semiconductor wafer and a glass substrate can be easily leveled so as to have a uniform thickness without any edge bead. The coating apparatus comprises a tray, a nozzle for ... 06/01/06 - 20060115991 - Method for controlling the properties of darc and manufacturing darc A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas ... 05/25/06 - 20060110931 - Method for forming insulation film A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and ... 05/25/06 - 20060110930 - Direct liquid injection system and method for forming multi-component dielectric films The present invention provides methods and systems for atomic layer deposition (ALD). In some embodiments a system is provided comprising: at least one direct liquid injection system configured to inject one or more deposition precursors into one or more vaporization chambers, at least one bubble system configured to vaporize one ... 05/25/06 - 20060110929 - Anhydrous film for lip make-up or care The present invention relates to a method for cladding a simple or complex surface, electrically conducting or semiconducting, by means of an organic film from at least one precursor of said organic film, characterised in that the cladding of the surface by the organic film is carried out by electro-initiated ... 05/11/06 - 20060099824 - High density plasma chemical vapor deposition process A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be ... 05/11/06 - 20060099823 - Active area bonding compatible high current structures An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively ... 05/11/06 - 20060099822 - Method of making a memory cell An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material. ... 05/11/06 - 20060099821 - Apparatus for detecting an amount of strain and method for manufacturing same An apparatus for detecting an amount of strain comprises a strain generating part, an electrical insulating layer and sensing elements. The strain generating part is a member to which strain is to be applied. The electrical insulating layer is formed on the strain generating part. The sensing elements are formed ... 05/11/06 - 20060099820 - Deposition method and apparatus A deposition method and apparatus provide a uniform deposition rate and good reproducibility in a process used to deposit a material onto a substrate. The deposition method includes preparing a substrate on which a thin film is deposited, preparing a line source that includes a plurality of heating crucibles are ... 05/11/06 - 20060099819 - Low dielectric constant compositions and methods of use thereof Low dielectric compositions and methods of use thereof in integrated circuits are disclosed. The low dielectric compositions are derived from carbosilane polymers and oligomers containing imbedded sila- or disilacyclobutane rings and, after heating to induce cross-linking, may be used as an interlayer dielectric as well as a capping layer within ... 05/04/06 - 20060094252 - Methods to form electronic devices and methods to form a material over a semiconductive substrate A first electrode and a doped oxide layer laterally proximate thereof are provided over a substrate. A silicon nitride layer is formed over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode by low pressure ... 05/04/06 - 20060094251 - Multi-layer film stack for extinction of substrate reflections during patterning A method including introducing a dielectric layer over a substrate between an interconnection line and the substrate, the dielectric layer comprising a plurality of alternating material layers; and patterning an interconnection to the substrate. An apparatus comprising a substrate comprising a plurality of devices formed thereon; and an interlayer dielectric ... 05/04/06 - 20060094250 - Method for fabricating semiconductor device Disclosed is a method for fabricating a semiconductor device. The method includes: forming a first inter-layer insulation layer on a substrate provided with a plurality of cell contact plugs; selectively etching the first inter-layer insulation layer to form a plurality of first contact holes; performing a cleaning process to remove ... 05/04/06 - 20060094249 - Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous semiconductor layer to form a crystalline semiconductor layer. A semiconductor structure includes a semiconductor substrate, ... 05/04/06 - 20060094248 - Method of oxidizing member to be treated In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen ... 04/27/06 - 20060089006 - Metal oxide layer formed on substrates and its fabrication methods The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method. The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile-environment devices. An important ... 04/20/06 - 20060084277 - Method of forming amorphous silica-based coating film with low dielectric constant and thus obtained silica-based coating film The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid composition containing a silicon compound obtained ... 03/30/06 - 20060068599 - Methods of forming a thin layer for a semiconductor device and apparatus for performing the same The present invention can provide methods of forming a thin layer for a semiconductor device. The methods can include forming a recessed portion on an object, and forming an insulation layer on the object by reacting a water vapor, an oxygen gas including an oxygen radical and an organic silicon ... 03/30/06 - 20060068598 - Film formation apparatus and method of using the same A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. ... 03/23/06 - 20060063389 - Structure having a shallow trench-deep trench isolation region for a bicmos/cmos technology A structure having a shallow trench-deep trench isolation region for a semiconductor device is provided. ... 03/09/06 - 20060051971 - Composite dielectric forming methods and composite dielectrics A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a ... 03/09/06 - 20060051970 - Method for forming porous film and porous film formed by the method A method for forming a porous film includes the precursor film forming step of forming a precursor film containing a mixture of a skeleton material and a pore-forming material, the decomposition step of decomposing the pore-forming material in the precursor film by oxidation in an oxidizing atmosphere, and the extraction ... 03/09/06 - 20060051969 - Semiconductor device fabrication method According to the present invention, there is provided a semiconductor device fabrication method comprising: forming an interlayer dielectric film on a semiconductor substrate; removing a predetermined region of the interlayer dielectric film, and forming a film by depositing a conductive material on the semiconductor substrate and interlayer dielectric film so ... 03/02/06 - 20060046510 - Method of forming an oxide film, an oxide film, a component and an electronic apparatus A method of forming an oxide film 3 on a surface of a base material 12 constituted from an inorganic material is disclosed. The oxide film 3 is constituted from a material containing an oxide of the inorganic material as a major component thereof. The method includes the steps of: ... 03/02/06 - 20060046509 - Method of forming a phase change memory device having a small area of contact Methods of fabricating a phase change memory device having a small area of contact are provided. The method includes forming a lower interlayer insulating layer on a semiconductor substrate, and forming a lower conductor pattern within the lower inter-insulating layer. A first insulating layer pattern which crosses a top surface ... 03/02/06 - 20060046508 - Silicon oxide gapfill deposition using liquid precursors A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is ... 03/02/06 - 20060046507 - Method to stabilize carbon in si1-x-ygexcy layers A method of providing a layer in a semiconductor device, wherein the layer includes Si1-x-yGexCy, and wherein the carbon in the layer is in a stable condition, includes preparing a silicon substrate; preparing a SiGeC precursor; forming a Si1-x-yGexCy layer on the silicon substrate from the precursor; forming a top ... 03/02/06 - 20060046506 - Soft de-chucking sequence A method and apparatus for improving the properties of a deposited film. The method includes depositing a low-k dielectric on a substrate using a plasma-enhanced chemical vapor deposition process and performing a soft de-chucking sequence after depositing the low-k dielectric film using a soft plasma process. The apparatus includes a ... 03/02/06 - 20060046505 - Ruthenium gate for a lanthanide oxide dielectric layer A ruthenium gate for a lanthanide oxide dielectric layer and a method of fabricating such a combination gate and dielectric layer produce a reliable structure for use in a variety of electronic devices. The lanthanide oxide dielectric layer is formed by depositing lanthanum by atomic layer deposition onto a substrate ... 03/02/06 - 20060046504 - Metal oxide structure containing titanium oxide and production method and use thereof A dye sensitized solar cell comprising, as the dye electrode, a titanium oxide structure having an optical band gap (hereinafter referred to as “BG”) of 2.7 to 3.1 eV as calculated from absorbance measured by an integrating sphere-type sptetrophotometer, or a metal oxide structure obtained by dry-mixing a plurality of ... 03/02/06 - 20060046503 - Material for electronic device and process for producing the same An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by containing nitrogen atoms in a large amount in the vicinity of the oxynitride film surface when the nitrogen content distribution in ... 02/23/06 - 20060040508 - Method to protect internal components of semiconductor processing equipment using layered superlattice materials This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth ... 02/23/06 - 20060040507 - Method for depositing porous films A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced ... 02/16/06 - 20060035472 - Master base for fabrication and method for manufacturing the same A master base for fabrication includes a substrate, a first photoresist layer disposed on the substrate, and a second photoresist layer disposed on the first photoresist layer, wherein the first photoresist layer attenuates or absorbs rays reflected at the interface between the first photoresist layer and the substrate to prevent ... 02/16/06 - 20060035471 - Method of depositing a silicon dioxide comprising layer doped with at least one of p, b and ge A substrate is positioned within a deposition chamber. At least two gaseous precursors are fed to the chamber which collectively comprise silicon, an oxidizer comprising oxygen and dopant which become part of the deposited doped silicon dioxide. The feeding is over at least two different time periods and under conditions ... 02/16/06 - 20060035470 - Method for manufaturing semiconductor device and substrate processing system To improve throughput of a substrate processing without wastefully using a source as a reactant by repeating supply steps of a plurality of reactants for a plurality of times. A substrate processing apparatus includes a source gas obtained by vaporizing a liquid source as a reactant, and functions to process ... 02/09/06 - 20060030161 - Film forming method A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF3)4. ... 01/05/06 - 20060003596 - Low temperature process for polysilazane oxidation/densification Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane ... 01/05/06 - 20060003595 - Method of passivating oxide/compound semiconductor interface The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includes heating a semiconductor structure at an elevated temperature of between ... 01/05/06 - 20060003594 - Molecules for langmuir-blodgett deposition of a molecular layer A molecule for Langmuir-Blodgett (LB) deposition of a molecular layer. The molecule includes at least one switching moiety, a hydrophilicity-modifiable connecting group attached to one end of the moiety, and a hydrophilicity-non-modifiable connecting group attached to the other end of the moiety. The hydrophilicity-modifiable connecting group is transformable to a ... 12/29/05 - 20050287817 - Low dielectric constant zinc oxide Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon ... 12/29/05 - 20050287816 - Methods of forming patterned photoresist layers over semiconductor substrates This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the ... 12/22/05 - 20050282398 - Oxygen plasma treatment for enhanced hdp-cvd gapfill Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The ... 12/01/05 - 20050266697 - Light-emitting nanoparticles and method of making same A method for the production of a robust, chemically stable, crystalline, passivated nanoparticle and composition containing the same, that emit light with high efficiencies and size-tunable and excitation energy tunable color. The methods include the thermal degradation of a precursor molecule in the presence of a capping agent at high ... 12/01/05 - 20050266696 - [method of forming a silicon nitride layer] A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is ... 11/17/05 - 20050255707 - Discrete nano-textured structures in biomolecular arrays, and method of use A biomolecular array includes a substrate across which is distributed an array of discrete regions of a porous substance formed from a porogen-containing organosilicate material. The porous substance is designed to bind chemical targets useful in biotechnology applications, such as gene expression, protein, antibody, and antigen experiments. The regions are ... 11/17/05 - 20050255706 - Method for manufacturing semiconductor device In a MOSFET, after an element region is formed, a wiring layer is formed subsequently to a barrier metal layer, and hydrogen annealing is performed. However, in the case of an n-channel MOSFET, a threshold voltage is lowered due to an occlusion characteristic of the barrier metal layer. Thus, an ... 11/17/05 - 20050255705 - Prevention of electrostatic wafer sticking in plasma deposition/etch tools To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the ... 11/17/05 - 20050255704 - Stacked dielectric layer suppressing electrostatic charge buildup and method of fabricating the same A method of fabricating a stacked dielectric layer for suppressing electrostatic charge buildup. First, a substrate having metal layers thereon is provided, with a plurality of gaps formed therebetween. Next, a dielectric layer is formed by simultaneous deposition and ion-bombardment, such that the dielectric layer covers the bottom dielectric liner ... 11/10/05 - 20050250340 - Hdp-cvd seasoning process for high power hdp-cvd gapfil to improve particle performance A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at ... 11/03/05 - 20050245093 - Atomic layer deposition methods and atomic layer deposition tools An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. ... 11/03/05 - 20050245092 - Method for making a semiconductor structure using silicon germanium A semiconductor substrate having a silicon layer is provided. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate having an oxide layer underlying the silicon layer. An amorphous or polycrystalline silicon germanium layer is formed overlying the silicon layer. Alternatively, germanium is implanted into a top portion of the ... 10/13/05 - 20050227498 - Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the ... 10/13/05 - 20050227497 - Light transparent substrate imprint tool with light blocking distal end A substrate imprint tool is provided with a light transparent base and a light blocking distal end that is coupled to the light transparent base. ... 10/06/05 - 20050221622 - Deposition method and semiconductor device The present invention relates to a deposition method in which an insulating film that coats wirings mainly made of copper film and has low dielectric constant. Its constitution in the deposition method, where deposition gas is transformed into plasma and reaction is caused to form the insulating film having low ... 09/29/05 - 20050215068 - Porous body and manufacturing method therefor It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present invention relates to a porous body having a network structure skeleton wherein 1) the aforementioned skeleton is composed of an inner ... 09/29/05 - 20050215067 - Combination insulator and organic semiconductor formed from self-assembling block co-polymers A semiconductor structure including an insulator layer formed of a first polymer. The structure also includes an organic semiconductor layer formed of a second polymer. The polymers self-assemble into a well-ordered co-polymer structure with the semiconductor layer positioned adjacent the insulator layer. The structure may be an organic, thin-film semiconductor ... 09/29/05 - 20050215066 - High density plasma process for the formation of silicon dioxide on silicon carbide substrates Methods are provided for forming silicon dioxide (SiO2) on a silicon carbide (SiC) substrate. The method comprises: providing a SiC substrate; supplying an atmosphere including oxygen; performing a high-density (HD) plasma-based process; and, forming a SiO2 layer overlying the SiC substrate. Typically, performing the HD plasma-based process includes connecting a ... 09/29/05 - 20050215065 - Low dielectric constant porous films A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds ... 09/15/05 - 20050202681 - Method and/or system for forming a thin film Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described. ... 09/01/05 - 20050191862 - Air gap interconnect structure and method of manufacture A dual layer of polymeric material is deposited with a base layer and top layer resist onto an integrated circuit structure with topography. The base layer planarizes the surface and fills in the native topography. The base layer decomposes almost completely when exposed to an oxidizing environment. The top layer ... 08/11/05 - 20050176261 - Film formation method and apparatus for semiconductor process A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming ... 07/28/05 - 20050164515 - Biological control of nanoparticle nucleation, shape and crystal phase The present invention includes compositions and methods for selective binding of amino acid oligomers to semiconductor materials. One form of the present invention is a method for controlling the particle size of the semiconductor materials by interacting an amino acid oligomer that specifically binds the material with solutions that can ... 07/21/05 - 20050159013 - Film formation method A film formation method includes a preparation stage (S10) and a process stage (S20). In the preparation stage (S10), a process time correction equation prepared to correct process time in accordance with atmospheric pressure is derived, based on a first relational equation that expresses a relationship between film thickness and ... 06/30/05 - 20050142890 - Atomic layer deposition apparatus and method An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first deposition precursor is fed to the chamber under first vacuum conditions effective to form a first monolayer on the substrate. The first vacuum conditions are maintained at least in part by a ... 06/30/05 - 20050142889 - Method of forming oxide layer in semiconductor device Provided is related to a method of forming an oxide layer of a semiconductor device. In the method, a first oxide layer is formed with a first thickness on a semiconductor substrate, that is comparted into first and second fields, and then a second oxide layer is formed on the ... 06/09/05 - 20050124169 - Truncated dummy plate for process furnace A truncated dummy plate which is suitable for promoting substantially uniform flow of process gases among all regions on the surface of a substrate to facilitate deposition of a film having uniform thickness on the substrate. The truncated dummy plate has a circular shape with a flat edge provided in ... 06/02/05 - 20050118833 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device according to the present invention comprises the steps of: (1) forming an insulating film 11 composed of a thin silicon nitride film on a semiconductor substrate 1 having at least a necessary element and a recessed part 6 so as to cover the ... ### FreshPatents.com Support |