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Semiconductor Device Manufacturing: Process > Chemical Etching > Liquid Phase Etching > Silicon SiliconSilicon patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/15/07 - 20070037401 - Method of forming trench isolation A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditions and for ... 02/15/07 - 20070037400 - Composition and methods removing polysilicon Embodiments of the invention provide a composition adapted to remove polysilicon. The composition comprises about 1.0 to 10 percent by weight of alkylammonium hydroxide, about 0.1 to 5.0 percent by weight of hydrogen peroxide, and water. ... 12/28/06 - 20060292887 - Manufacturing method for a semiconductor device A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface, a side surface, a rear surface on the side opposite the active surface, and a plurality of semiconductor elements formed on the active surface; forming the side surface of the semiconductor wafer so that ... 12/07/06 - 20060276047 - Macroporous silicon microcavity with tunable pore size A biological sensor which includes: a macroporous semiconductor structure comprising a central layer interposed between upper and lower layers, each of the upper and lower layers including strata of alternating porosity; and one or more probes coupled to the porous semiconductor structure, the one or more probes binding to a ... 06/29/06 - 20060141802 - Silicon electrode assembly surface decontamination by acidic solution Methods for cleaning silicon surfaces of electrode assemblies by efficiently removing contaminants from the silicon surfaces without discoloring the silicon surfaces using an acidic solution comprising hydrofluoric acid, nitric acid, acetic acid, and balance deionized water. ... 03/30/06 - 20060068597 - Method for texturing surfaces of silicon wafers In a method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution, it is provided that the etching solution comprises, in percent, 20% to ... 11/03/05 - 20050245091 - Passivation for cleaning a material A contact is defined by an opening etched into borophosphosilicate glass (BPSG) down to a silicon substrate. In a contact cleaning process designed to remove native oxide at the bottom of the contact with little effect on the BPSG, the contact is dipped in an etch retardant before being dipped ... 08/25/05 - 20050186804 - Semiconductor device fabrication method and fabrication apparatus The flatness of the surface of a Si substrate is requested as the present gate length is miniaturized. The present invention is a semiconductor device fabrication method for flattening a silicon surface by continuously supplying a high-temperature fluoride ammonium solution to the surface a silicon substrate in which at least ... 08/18/05 - 20050181622 - Removing silicon nano-crystals A technique for reducing the number of silicon (Si) nano-crystals available to attach or otherwise deposit upon semiconductor device surfaces. More particularly, embodiments of the invention make a wafer substantially free of Si nano-crystals resulting from a wet etch of oxide layer portions, while not impairing semiconductor device dimensions or ... ### FreshPatents.com Support |