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Semiconductor Device Manufacturing: Process > Chemical Etching > Liquid Phase Etching > Germanium GermaniumGermanium patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.10/05/06 - 20060223330 - Nitride semiconductor device and manufacturing method thereof A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor ... 03/16/06 - 20060057856 - Manufacturing method for strained silicon wafer A manufacturing method for producing a stained silicon wafer has the steps of forming an Si1-xGex composition-graded layer of which Ge concentration is stepwisely increased on a single crystal silicon substrate, forming an Si1-xGex uniform composition layer of which Ge concentration is constant on the Si1-xGex composition-graded layer, forming a ... 10/27/05 - 20050239292 - Device for etching semicnductors with a large surface area The device etches semiconductors with a large surface area in a trough-shaped receptacle containing a liquid electrolyte. A sample head is mounted inside the etching trough, and is provided with a device for holding at least one semiconductor wafer. The device is tilted to promote turbulent electrolyte flow in a ... 08/18/05 - 20050181621 - Methods of forming doped and un-doped strained semiconductor and semiconductor films by gas-cluster ion irradiation Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the ... 08/11/05 - 20050176260 - Method for removing oxides from a ge semiconductor substrate surface This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface. ... ### FreshPatents.com Support |