REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Chemical Etching > Liquid Phase Etching Liquid Phase EtchingLiquid Phase Etching patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082497 - Composition for removing an insulation material and related methods A composition for removing an insulation material and related methods of use are disclosed. The composition comprises about 1 to 50 percent by weight of an oxidizing agent, about 0.1 to 35 percent by weight of a fluorine-containing compound, and water. The insulation material comprises at least one of a ... 03/29/07 - 20070072436 - Substrate processing apparatus and substrate processing method In a substrate processing apparatus of the present invention, when substrates are loaded into a chamber, a frame part formed integral with a substrate holding part is interposed between the chamber and a cover, thereby sealing the interior of the chamber. When the substrates are unloaded to above the chamber, ... 03/15/07 - 20070059941 - Methods of forming patterns and capacitors for semiconductor devices using the same A semiconductor structure may be formed by a wet etching process using an etchant containing water. The semiconductor structure may include a plurality of patterns having an increased or higher aspect ratio and may be arranged closer to one another. A dry cleaning process may be performed using hydrogen fluoride ... 02/22/07 - 20070042608 - Method of substantially uniformly etching non-homogeneous substrates A method of substantially uniformly etching oxides from non-homogeneous substrates is provided. The method utilizes a substantially non-aqueous etchant including an organic solvent and a fluorine-containing compound. The fluorine containing compound may include HF, HF:NH4F, (NH4)HF2, or TMAF:HF and mixtures thereof. The etchant may be applied to chemically non-homogeneous layers ... 02/15/07 - 20070037399 - High-pressure device for closing a container in a clean room The invention relates to a very compact device and to a method for closing a container by means of a rotational symmetric lifting system, which contains a working piston and a guide cylinder and is operated essentially using the same fluid that is placed inside the container while serving a ... 01/18/07 - 20070015372 - Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same Example embodiments of the present invention relate to an etching solution, a method of forming a pattern using the same, a method of manufacturing a multiple gate oxide layer using the same and a method of manufacturing a flash memory device using the same. Other example embodiments of the present ... 12/21/06 - 20060286808 - System and method of processing substrates using sonic energy having cavitation control A system and method for the acoustic-assisted processing of a substrate, such as a semiconductor wafer, that reduces and/or eliminates damage. The invention suppresses cavitation and pressure effects within the cleaning liquid that may damage devices on the wafer by maintaining the liquid under a constant positive pressure. In one ... 12/14/06 - 20060281327 - Semiconductor laser element and method of fabrication thereof A semiconductor laser element having an advantageous vertical light confinement efficiency, a low threshold current and a low element resistance is provided. The semiconductor laser element has a substrate and a stacked structure formed thereon, where the stacked structure comprises a buffer layer, an n-Al0.6Ga0.4As cladding layer, an n-Al0.47Ga0.53As cladding ... 12/14/06 - 20060281326 - Washing apparatus, washing stystem, and washing method The present invention provides a cleaning apparatus, a cleaning system and a cleaning method for a member used in the semiconductor field, excellent in cleaning capability and good in operation efficiency. The present invention is directed to a cleaning apparatus for cleaning the member used in the semiconductor field, which ... 11/30/06 - 20060270242 - Cleaning method and solution for cleaning a wafer in a single wafer process The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution ... 11/23/06 - 20060264058 - Liquid-based gravity-driven etching-stop technique for controlling structure dimension A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, ... 11/16/06 - 20060258168 - Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide ... 11/16/06 - 20060258167 - Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide ... 11/16/06 - 20060258166 - Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide ... 11/16/06 - 20060258165 - Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide ... 11/09/06 - 20060252272 - Method of processing silicon wafer The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each wafer is lapped to be planar; step 14 in which the wafer is subjected to alkaline ... 11/02/06 - 20060246735 - Film-forming apparatus component and method for cleaning same There are provided a film forming equipment component having a structure in which an deposited film d formed on the component can be separated from the component for a time period shorter than the prior art to reduce damage due to a cleaning fluid S, and a method of cleaning ... 08/31/06 - 20060194443 - Field effect transistor with gate spacer structure and low-resistance channel coupling Spacer structures of field effect transistor structures are enhanced at least in sections with immobile charge carriers. The charge accumulated in the spacer structures induces an enhancement zone of mobile charge carriers in the underlying semiconductor substrate. The enhancement zone reduces the resistance of a channel coupling between the respective ... 08/31/06 - 20060194442 - Procede method for cleaning a semiconductor A method for removing contaminating particles from the substrate of a semiconductor, comprising a step for depositing a thin film in dielectric material on the substrate. The method is characterized in that the deposition step is immediately followed by a chemical etching step for removing the deposited thin film. ... 08/31/06 - 20060194441 - Method for etching a silicon wafer and method for performing differentiation between the obverse and the reverse of a silicon wafer using the same method The invention is improvement of a silicon wafer etching method of storing an acid etching solution and an alkali etching solution respectively in plural etching tanks, and immersing a silicon wafer having a work-degenerated layer, which has experienced a lapping process and then a cleaning process, in the acid etching ... 08/24/06 - 20060189148 - Transistor having a metal nitride layer pattern, etchant and methods of forming the same A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an ... 08/17/06 - 20060183338 - Etchant composition and manufacturing method for thin film transistor array panel The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3). ... 08/03/06 - 20060172548 - Method of cleaning wafer and method of manufacturing gate structure A method of cleaning a wafer, adapted for a patterned gate structure. The gate structures comprise a gate dielectric layer, a nitrogen-containing barrier layer and a silicon-containing gate layer sequentially stacked over the substrate. The method includes cleaning the substrate with phosphoric acid solution and hydrofluoric acid solution so that ... 07/27/06 - 20060166510 - Semiconductor manufacturing method for die bonding The present invention has a pump system having a gear pump to which a gear structure, having a pump gear and a driving gear concentrically and integrally formed with each other, is incorporated; a main control section for controlling this pump system; and a stage that can support a plate-like ... 07/27/06 - 20060166509 - Method to avoid alpha-si damage during wet stripping processes in the manufacture of mems devices A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent stripping operation due to the oxidation of ... 07/20/06 - 20060160368 - Substrate processing apparatus and substrate processing method A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside ... 07/20/06 - 20060160367 - Methods of treating semiconductor substrates The invention includes methods of treating semiconductor substrates with one or more reactants dispersed in supercritical fluid. A substrate can be provided within a reaction chamber having an interior periphery. The interior periphery can include a bottom region, a top region, and one or more sidewall regions between the bottom ... 07/13/06 - 20060154490 - Liquid treating apparatus A liquid treating apparatus includes an etchant discharging nozzle for discharging a treating solution (E) onto an upper surface of a film carrier tape for mounting an electronic component (T) from above and a treating solution contact prevention chamber disposed on an upstream side of a liquid treating start position ... 07/13/06 - 20060154489 - Semiconductor base structure for molecular electronics and molecular electronic-based biosensor devices and a method for producing such a semiconductor base structure The invention concerns a structured semiconductor surface as basis for molecular electronics or molecular electronics-based bio-sensors. The starting point is a heterostructure consisting of two undoped layers of a semiconductor material that are separated by an extremely thin (a few nm) layer of a different semiconductor material. This material stack ... 07/06/06 - 20060148267 - Apparatus and method for single-or double-substrate processing In a method for treating semiconductor substrates, one or two substrates are positioned in a substrate process chamber and subjected to wet etching, cleaning, rinsing and/or drying steps. During cleaning or rinsing a band of megasonic energy is created within the process chamber to create an active rinse or cleaning ... 06/29/06 - 20060141801 - Semiconductor device manufacturing method, wafer, and wafer manufacturing method A semiconductor device manufacturing method capable of making in-plane temperature distribution on a wafer uniform at heat treatment time. Before heat treatment is performed by irradiating the wafer with lamp light from the side of a device formed area where semiconductor devices are to be formed, an SiN film with ... 06/22/06 - 20060134923 - Semiconductor substrate cleaning apparatus and method According to the present invention, there is provided a semiconductor substrate cleaning apparatus comprising: a support which supports a semiconductor substrate; a rotating mechanism which rotates the semiconductor substrate; a first supply unit which supplies a first treatment liquid to which an ultrasonic wave is added, to a surface, on ... 05/11/06 - 20060099817 - Novel slurry for chemical mechanical polishing of metals A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about 4 to about 8. ... 04/06/06 - 20060073707 - Low 1c screw dislocation 3 inch silicon carbide wafer A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2. ... 03/23/06 - 20060063388 - Method for using a water vapor treatment to reduce surface charge after metal etching The present disclosure provides a method for reducing or eliminating residual surface charge from a wafer during a semiconductor fabrication process. Because metal etching and photo resist ashing may result in a surface charge, performing a wet cleaning process directly after the ashing may increase corrosion to metal surfaces. This ... 03/02/06 - 20060046499 - Apparatus for use in thinning a semiconductor workpiece The present invention provides an apparatus and method for use in processing semiconductor workpieces. The new apparatus and method allows for the production of thinner workpieces that at the same time remain strong. Particularly, a chuck is provided that includes a body, a retainer removeably attached to the body and ... 02/23/06 - 20060040506 - Semiconductor fabrication methods and apparatus Methods and apparatus for fabricating and cleaning in-process semi-conductor wafers are provided. An in-process wafer is placed within a closed chamber. A reactant gas is incorporated in a liquid solvent to form a “reactant mixture” that is capable of reacting with photoresist material for other material) on a wafer surface ... 02/23/06 - 20060040505 - Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second ... 01/05/06 - 20060003593 - Method and apparatus for stripping photo-resist A method for stripping a photo-resist includes the steps of: (a) wet stripping a photo-resist off from a substrate; and (b) rinsing the substrate under high-speed conveyance using an aqua knife. A speed of the conveyance of the substrate is 0.2 m/s or higher. Because the aqua knife can rinse ... 01/05/06 - 20060003592 - System and method for processing a substrate using supercritical carbon dioxide processing A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a ... 12/22/05 - 20050282397 - Semiconductor constructions The invention includes semiconductor processing patterning methods and semiconductor constructions. A semiconductor processing patterning method includes forming a second composition resist layer over a different first composition resist layer. Overlapping portions of the first and second composition resist layers are exposed to actinic energy effective to change solubility of the ... 12/22/05 - 20050282396 - Micro-etching method to replicate alignment marks for semiconductor wafer photolithography A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to ... 12/08/05 - 20050272268 - Method of producing substrate having patterned organosilane layer and method of using the substrate having the patterned organosilane layer Provided are a method of producing a substrate having a patterned organosilane layer and a method of using the substrate having the patterned organosilane layer. The method of producing the substrate having the patterned organosilane layer, includes: coating organosilane on a substrate to obtain an organosilane layer; coating a photoresist ... 11/24/05 - 20050260861 - Method for evaluating semiconductor substrate A method for evaluating a semiconductor substrate includes the steps of cleaning the semiconductor substrate with SPM, attaching a liquid metal electrode to a surface of the semiconductor substrate, and applying a voltage to the semiconductor substrate. ... 11/10/05 - 20050250339 - Methods of removing metal-containing materials Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide ... 11/03/05 - 20050245090 - Element having microstructure and manufacturing method thereof A method of manufacturing an element having a microstructure of an excellent grating groove pattern or the like is obtained. This method of manufacturing an element having a microstructure comprises steps of forming a metal layer on a substrate, forming a dot column of concave portions on the surface of ... 11/03/05 - 20050245089 - Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the ... 10/13/05 - 20050227496 - Phase change memory elements and methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall comprising a portion of the insulating layer by selectively etching a ... 10/06/05 - 20050221621 - Proximity head heating method and apparatus Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, ... 10/06/05 - 20050221620 - Process for etching a substrate The invention relates to a process for etching at least one substrate, in particular at least one silicon wafer for the fabrication of DRAM memory chips. The process comprising at least one substrate, for a first etching step, is arranged for a predetermined time in a first vessel containing a ... 09/29/05 - 20050215064 - Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl−, NO3− and F−. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over ... 09/22/05 - 20050208774 - Wet processing method and processing apparatus of substrate A substrate wet-processing method can carry out uniform chemical processing of the surface of a substrate while easily preventing a gas from remaining on the surface of the substrate and preventing difference in the concentration and the temperature of a chemical solution between the end portion and the central portion ... 09/01/05 - 20050191861 - Using supercritical fluids and/or dense fluids in semiconductor applications Embodiments of the present invention generally relate to methods and apparatuses using supercritical fluids and/or dense fluids in semiconductor applications. In one embodiment, a substrate structure is dried by applying a supercritical fluid, a dense fluid, or combinations thereof. In another embodiment, a substrate structure is cleaned by applying a ... 08/25/05 - 20050186803 - Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes selectively forming a photoresist film on an insulating film formed on a surface of a underlying semiconductor region such that the photoresist provides a masked surface region and an exposed surface region for the insulating film, and selectively removing that portion of ... 08/18/05 - 20050181620 - Fluorinated surfactants for aqueous acid etch solutions Novel aqueous, acid etch solutions comprising a fluorinated surfactant are provided. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates. ... 08/18/05 - 20050181619 - Method for forming metal oxide layer by nitric acid oxidation A method for forming a metal oxide layer by a nitric acid oxidation is disclosed. The method comprises steps of: a) providing a substrate, b) forming an ultra-thin silicon dioxide layer on the substrate, c) forming a metal layer on the silicon dioxide layer, d) oxidizing the metal layer into ... 08/11/05 - 20050176259 - Method for removing photoresist Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate ... 07/21/05 - 20050159011 - Selective etching silicon nitride By providing a silicon containing precursor, such as methyl triethoxysilane, to a phosphoric etch bath, wafers containing nitride may be selectively etched without unduly impacting other silicon containing underlying layers. ... 07/07/05 - 20050148197 - Substrate proximity processing structures and methods for using and making the same An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region that is ... 07/07/05 - 20050148196 - Method and system for patterning material in a thin film device An aspect of the present invention is a method of patterning material in a thin-film device. The method includes forming a liftoff stencil, depositing a first layer of material through the liftoff stencil, depositing a second layer of material through the liftoff stencil, removing at least a portion of the ... 06/16/05 - 20050130437 - Dry film remove pre-filter system In accordance with the objectives of the invention a new method and apparatus is provided for the removal of by-products resulting from a dry-film removal process. The conventional method and apparatus for controlling a dry-film removal process is extended by the addition of a Dry-Film Remove Pre-Filter System, which significantly ... 06/09/05 - 20050124168 - Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed ... 06/02/05 - 20050118832 - Removal of mems sacrificial layers using supercritical fluid/chemical formulations A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid, an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, ... ### FreshPatents.com Support |