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Semiconductor Device Manufacturing: Process > Chemical Etching > Vapor Phase Etching (i.e., Dry Etching) > Utilizing Electromagnetic Or Wave Energy > By Creating Electric Field (e.g., Plasma, Glow Discharge, Etc.) > Organic Material (e.g., Resist, Etc.) Organic Material (e.g., Resist, Etc.)Organic Material (e.g., Resist, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077769 - Method of removing organic contaminants from a semiconductor surface A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication ... 03/22/07 - 20070066080 - Method of producing a substrate having areas of different hydrophilicity and/or oleophilicity on the same surface The present invention relates to substrates having wetting contrasts which include a top layer of polymer matrix and particles of an inorganic material. Such substrates can be processed in various ways which allow the production of good wetting contrasts by various processing means. According to a first aspect of the ... 03/22/07 - 20070066079 - Sealing porous dielectrics with silane coupling reagents A method and structure for sealing porous dielectrics using silane coupling reagents is herein described. A sealant chain (silane coupling reagent) is formed from at least silicon, carbon, oxygen, and hydrogen and exposed to a porous dielectric material, wherein the sealant chain reacts with a second chain, that has at ... 03/08/07 - 20070054496 - Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen ... 02/08/07 - 20070032089 - Printable semiconductor structures and related methods of making and assembling The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized ... 02/01/07 - 20070026683 - Method for reducing amine based contaminants Method for reducing resist poisoning. The method includes the steps of forming a first structure in a dielectric on a substrate, reducing amine related contaminants from the dielectric and the substrate prior to a formation of a second structure on the substrate such that the amine related contaminates will not ... 01/25/07 - 20070020944 - Selective etch process of a sacrificial light absorbing material (slam) over a dielectric material A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon ... 01/25/07 - 20070020943 - Apparatus and method for removing a photoresist structure from a substrate In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water ... 12/28/06 - 20060292886 - Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes sequentially forming etch target layers, a hard mask layer and an anti-reflective coating layer, selectively etching the anti-reflective coating layer and the hard mask layer using a gas generating polymers, thereby increasing a line width of a bottom ... 12/28/06 - 20060292885 - Layout modification to eliminate line bending caused by line material shrinkage A semiconductor device and a method for fabricating a semiconductor device with reduced line bending is provided. The method can include forming a first layer and depositing a photoresist layer on the first layer. The photoresist layer can be patterned, such that the patterning comprises at least one support feature ... 11/30/06 - 20060270241 - Method of removing a photoresist pattern and method of manufacturing a semiconductor device using the same In a method of removing a photoresist pattern from a substrate without deteriorating a lower electrode or increasing processing time, ozone gas may be provided onto a substrate on which a photoresist pattern may be formed. An oxidation-decomposition process may be carried out using the ozone gas, to thereby decompose ... 11/16/06 - 20060258162 - Method for integrated circuit fabrication using pitch multiplication Different sized features in the array and in the periphery of an integrated circuit are patterned on a substrate in a single step. In particular, a mixed pattern, combining two separately formed patterns, is formed on a single mask layer and then transferred to the underlying substrate. The first of ... 11/16/06 - 20060258161 - Methods of processing a semiconductor substrate The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region received about a peripheral edge of the semiconductor substrate. A layer comprising amorphous carbon is provided over the substrate outer surface. A masking ... 11/02/06 - 20060246734 - Methods of forming patterned photoresist layers over semiconductor substrates This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the ... 10/19/06 - 20060234513 - Method for manufacturing semiconductor device and semiconductor device A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered ... 10/12/06 - 20060228895 - Method of forming fine pitch photoresist patterns using double patterning technique A method of forming a photoresist pattern comprises providing a semiconductor substrate on which a layer to be etched is formed. The method further comprises forming a first photoresist pattern on the layer to be etched, processing the first photoresist pattern with hydrogen bromide (HBr) plasma, and forming a second ... 10/12/06 - 20060228894 - Method for semiconductor manufacturing using a negative photoresist with thermal flow properties Provided is a method for manufacturing a semiconductor device. In one example, the method includes forming a negative photoresist layer over an underlying layer, where the negative photoresist layer is soluble by a developer when formed. The negative photoresist layer is patterned using a chromium-less mask. The patterning alters at ... 10/05/06 - 20060223329 - Vapor hf etch process mask and method A method of processing a semiconductor wafer provides a wafer, and then forms an organic mask on at least a portion of the wafer. The method then applies a vapor etching process to the wafer through holes in the organic mask. ... 09/21/06 - 20060211256 - Porous underlayer film and underlayer film forming composition used for forming the same There is provided an underlayer coating causing no intermixing with photoresist layer and having a high dry etching rate compared with photoresist, which is used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for forming a porous underlayer coating for use in ... 09/14/06 - 20060205225 - Electronic device and method of making same The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of ... 09/14/06 - 20060205224 - Large-scale trimming for ultra-narrow gates Large-scale trimming for forming ultra-narrow gates for semiconductor devices is disclosed. A hard mask layer on a semiconductor wafer below a patterned soft mask layer on the semiconductor wafer is etched to narrow a width of the hard mask layer. The hard mask layer is trimmed to further narrow the ... 09/14/06 - 20060205223 - Line edge roughness reduction compatible with trimming A method and apparatus for reducing line edge roughness, comprising patterning a photoresist to define lines for etching an underlying layer, depositing a post development material between the lines, curing and removing the post development material to reduce line edge roughness, trimming the lines in the underlying layer, and then ... 08/31/06 - 20060194439 - Etch with striation control A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are ... 08/24/06 - 20060189147 - Pattern forming method and semiconductor device manufacturing method A pattern forming method includes the following teps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed. ... 08/24/06 - 20060189146 - Method for patterning micro features by using developable bottom anti-reflection coating In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist ... 08/03/06 - 20060172547 - Implantation of gate regions in semiconductor device fabrication A method for implanting gate regions essentially without implanting regions of the semiconductor layer where source/drain regions will be later formed. The method includes the steps of (a) providing (i) a semiconductor layer, (ii) a gate dielectric layer on the semiconductor layer, (iii) a gate region on the gate dielectric ... 07/06/06 - 20060148266 - Pattern formation method In a pattern formation method, a resist film is formed on a substrate and a barrier film including a plasticizer is then formed on the resist film. Thereafter, with a liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light ... 07/06/06 - 20060148265 - After deposition method of thinning film to reduce pinhole defects A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized ... 06/29/06 - 20060141798 - Device and method of performing a seasoning process for a semiconductor device manufacturing apparatus A method of performing a seasoning process for a semiconductor device processing apparatus is provided by the present invention. The method includes: forming a material layer on a test wafer; coating a photoresist on the material layer; patterning the photoresist so as to expose a central region of the wafer ... 06/15/06 - 20060128160 - Photoresist strip using solvent vapor Photoresist is removed from a wafer or substrate during various stages of processing by introducing a solvent vapor, along with heat, into the processing chamber. The solvent vapor chemically reacts with the photoresist to quickly and cleanly strip away the exposed photoresist. ... 05/04/06 - 20060094246 - Method of wafer patterning for reducing edge exclusion zone A method includes steps of: (a) providing a wafer on which a film has been deposited; (b) exposing an annular area in an edge exclusion zone of the wafer to radiation having a wavelength suitable for patterning the film in the annular area; and (c) modulating the radiation while exposing ... 04/13/06 - 20060079096 - Substrate processing method and substrate processing apparatus A substrate processing method for removing a resist film from a substrate having the resist film formed thereon comprises maintaining the inner region of the chamber at a prescribed temperature by putting a substrate in a chamber, denaturing the resist film by supplying ozone and a water vapor in such ... 04/13/06 - 20060079095 - Method of removing a polymer coating from an etched trench A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180° C. ... 03/23/06 - 20060063386 - Method for photoresist stripping and treatment of low-k dielectric material A plasma processing operation uses a gas mixture of N2 and H2 to both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresist layer is ... 02/23/06 - 20060040504 - Photoresist trimming process A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least ... 02/02/06 - 20060024972 - Silicon recess improvement through improved post implant resist removal and cleans The present invention provides a process of manufacturing a semiconductor device 200 while reducing silicon loss. In one aspect, the process includes removing a photoresist layer 270 from a semiconductor substrate 235 adjacent a gate 240 and cleaning the semiconductor substrate with a wet clean solution. The removing step includes ... 01/05/06 - 20060003591 - Multi-step ebr process for photoresist removal An edge bead removal process is disclosed. The process includes providing a wafer having a feature layer, coating a photoresist on the feature layer, rotating the wafer, and removing an edge bead from the wafer by removing an edge bump portion from the edge bead and removing an edge region ... 11/24/05 - 20050260860 - Method of pattering a photoresist film using a lithographic Method for patterning a photoresist film in lithographic process including the steps of: coating the photoresist film on a substrate provided with an under layer; exposing the substrate; firstly developing the photoresist film; exposing a whole surface of the substrate; and secondly developing the photoresist film. The present method has ... 11/17/05 - 20050255702 - Methods of processing a semiconductor substrate The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region received about a peripheral edge of the semiconductor substrate. A layer comprising amorphous carbon is provided over the substrate outer surface. A masking ... 09/08/05 - 20050196969 - Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained A method for preparing an organic electronic or optoelectronic device is described. The method comprises depositing a layer of fluorinated polymer on a substrate, patterning the layer of fluorinated polymer to form a relief pattern and depositing from solution a layer of organic semiconductive or conductive material on the substrate. ... 08/18/05 - 20050181618 - Polymer via etching process An improved etching process for creating dimensionally accurate sub-micron and micron via-openings is disclosed. Specifically, this invention discloses a via etching process for a polymer layer (24) deposited on a semiconductor substrate (28) comprising the steps of: placing the semiconductor substrate comprising a polymer layer (24) deposited on the semiconductor ... 07/14/05 - 20050153566 - Method of fabricating microelectronic device using super critical fluid Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter ... 06/02/05 - 20050118831 - Gas assisted method for applying resist stripper and gas-resist stripper combinations A method for moving resist stripper across the surface of a semiconductor substrate that includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a ... ### FreshPatents.com Support - Terms & Conditions |