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Semiconductor Device Manufacturing: Process > Chemical Etching > Vapor Phase Etching (i.e., Dry Etching) > Utilizing Electromagnetic Or Wave Energy > By Creating Electric Field (e.g., Plasma, Glow Discharge, Etc.) > With Substrate Heating Or Cooling With Substrate Heating Or CoolingWith Substrate Heating Or Cooling patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087573 - Pre-treatment method for physical vapor deposition of metal layer and method of forming metal silicide layer A pre-treatment method for physical vapor deposition of a metal layer is provided. A substrate is first provided and then a dry cleaning process is performed to the substrate using a chemical etching process, in which the chemical etching process causes a reaction to the oxide. Thereafter, an annealing process ... 02/22/07 - 20070042607 - Etch features with reduced line edge roughness A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the ... 12/21/06 - 20060286807 - Use of active temperature control to provide emmisivity independent wafer temperature Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic ... 10/12/06 - 20060228893 - Semiconductor substrates and field effect transistor constructions The invention includes methods of forming field effect transistor gates. In one implementation, a series of layers is formed proximate a semiconductive material channel region. The layers comprise a gate dielectric layer and a conductive metal-comprising layer having an ion implanted polysilicon layer received therebetween. Patterned masking material is formed ... 10/05/06 - 20060223328 - Apparatus and method for manufacturing semiconductor device, and electronic apparatus A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source. ... 09/28/06 - 20060216941 - Method for removing silicon oxide film and processing apparatus A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece ... 07/20/06 - 20060160365 - Water-cooling apparatus for semiconductor thermal processing A water-cooling apparatus for semiconductor thermal processing compring two supply pipes and two recycle pipes for respectively connecting to two chambers for performing the semiconductor processing. Each chamber has one set of pipes for supplying and recycling the cooling water in order to adjust the temperature in the chambers and ... ### FreshPatents.com Support |