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Semiconductor Device Manufacturing: Process > Chemical Etching > Vapor Phase Etching (i.e., Dry Etching) > Utilizing Electromagnetic Or Wave Energy > By Creating Electric Field (e.g., Plasma, Glow Discharge, Etc.) By Creating Electric Field (e.g., Plasma, Glow Discharge, Etc.)By Creating Electric Field (e.g., Plasma, Glow Discharge, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077767 - Method of plasma etching of high-k dielectric materials A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry. ... 03/29/07 - 20070072434 - Method and system for operating a physical vapor deposition process A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The target member comprises a first side and a second ... 03/22/07 - 20070066077 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes doping a surface of a silicon-containing dielectric film with nitrogen to change an etching rate of the silicon-containing dielectric film relative to a predetermined solution such that the etching rate is lower at a surface portion doped with nitrogen than at a ... 03/22/07 - 20070066076 - Substrate processing method and apparatus using a combustion flame A substrate processing method and apparatus using a combustion flame of a gaseous mixture of hydrogen and a non-oxygen oxidizer is described. The method uses the hydrogen and non-oxygen oxidizer combustion flame to impinge upon a substrate surface for chemically reacting with a thin film on the surface and thus ... 03/15/07 - 20070059938 - Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon A method and system for etching features in a substrate, whereby silicon oxide or silicon nitride or both are etched with high selectivity relative to silicon. In one embodiment, the process chemistry utilized to achieve high selectivity includes trifluoromethane (CHF3), difluoromethane (CH2F2), an oxygen containing gas, such as O2, and ... 02/15/07 - 20070037397 - Two-piece dome with separate rf coils for inductively coupled plasma reactors A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces ... 02/01/07 - 20070026682 - Method for advanced time-multiplexed etching A method of anisotropic plasma etching of a substrate material through a window defined in an etching mask comprises the steps of: disposing a hard mask material by injection of a precursor gas or precursor liquid and plasma-activated deposition to form a hard mask layer to form a temporary etch ... 01/25/07 - 20070020941 - Plasma etching apparatus and particle removal method The invention provides a particle removal method for a plasma processing apparatus, the method easily removing particles in the chamber up to its lower part. In a plasma etching apparatus including an upper antenna, a lower electrode, pressure gauges P1 and P2, gas introducing means, evacuating means, and phase controlling ... 01/18/07 - 20070015370 - Manufacturing method for semiconductor device It is an object of the present invention to enhance a selection ratio in an etching process, and provide a method for manufacturing a semiconductor device that has favorable uniform characteristics with high yield. In a method for manufacturing a semiconductor device according to the present invention, a semiconductor layer ... 01/11/07 - 20070010100 - Method of plasma etching transition metals and their compounds A method of plasma etching comprises using a primary etchant of carbon monoxide gas to etch a transition metal or transition metal compound and to form a volatile by-product of metal carbonyl. ... 12/28/06 - 20060292883 - Etching of silicon nitride with improved nitride-to-oxide selectivity utilizing halogen bromide/chlorine plasma A method of manufacturing a semiconductor device is disclosed. A gate is formed on a semiconductor substrate. A gate oxide is formed between the gate and the semiconductor substrate. A silicon oxide liner layer is deposited on the gate and on the semiconductor substrate. A silicon nitride layer is then ... 12/21/06 - 20060286806 - Plasma etching method and plasma etching apparatus The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is ... 12/14/06 - 20060281324 - Method of controlling the pressure in a process chamber (f) the steps (c) to (e) are repeated until the calculated average pressure Pc is substantially equal to the reference pressure value Pref so that it is no longer necessary to correct the position of the valve. ... 12/14/06 - 20060281323 - Method of cleaning substrate processing apparatus A method for cleaning a microwave plasma processing apparatus is disclosed wherein a cleaning gas is introduced and then excited with microwave plasma (step 3). By applying high-frequency power to a substrate supporting stage by which a substrate to be processed is supported (step 4), the etching rate is improved, ... 11/16/06 - 20060258160 - Method of manufacturing semiconductor device A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom ... 10/19/06 - 20060234512 - Plasma processing apparatus and plasma processing method A plasma processing apparatus and method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24a to a wafer 2 ... 10/05/06 - 20060223327 - Etch with photoresist mask A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The ... 09/07/06 - 20060199393 - H20 plasma and h20 vapor methods for releasing charges An in-situ performed method utilizing a pure H2O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H2O plasma or a pure H2O vapor to release or remove charges from a surface or surfaces of ... 08/31/06 - 20060194437 - Use of pulsed grounding source in a plasma reactor A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor. ... 08/24/06 - 20060189145 - Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection ... 08/24/06 - 20060189144 - Multiple layer etch stop and etching method A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively ... 08/17/06 - 20060183337 - Post high voltage gate dielectric pattern plasma surface treatment The present invention provides a method for fabricating a dual gate semiconductor device. In one aspect, the method comprises forming a nitridated, high voltage gate dielectric layer over a semiconductor substrate, patterning a photoresist over the nitridated, high voltage gate dielectric layer to expose the nitridated, high voltage dielectric within ... 08/10/06 - 20060178010 - Member having plasma-resistance for semiconductor manufacturing apparatus and method for producing the same In order to control and reduce generation of disjoined grains from a plasma-resistant member, the present invention provides a plasma-resistant member having no pores and boundary layers. In a layer structure made of yttria polycrystal and formed on a surface of a member for a semiconductor manufacturing apparatus on a ... 08/03/06 - 20060172546 - Dry-etching method A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cl2 and ... 08/03/06 - 20060172545 - Purge process conducted in the presence of a purge plasma The present invention provides, in one embodiment, a method for reducing defects associated with a plasma deposition or etching process. In this particular embodiment, the method includes creating a plasma in a deposition or etching chamber (140) and purging undesirable species from the deposition or etching chamber (150) in the ... 08/03/06 - 20060172544 - Member for plasma etching device and method for manufacture thereof A member for a plasma etching device, which comprises a device substrate comprising quartz glass, aluminum, alumite or a combination thereof and, formed on the surface thereof, a coating film of yttrium oxide or YAG having a film thickness of 10 μm or more and a variation in the thickness ... 07/27/06 - 20060166507 - Integrated circuits having low resistivity contacts and the formation thereof using an in situ plasma doping and clean Contact areas comprising doped semiconductor material at the bottom of contact holes are cleaned in a hot hydrogen plasma and exposed in situ during and/or separately from the hot hydrogen clean to a plasma containing the same dopant species as in the semiconductor material so as to partially, completely, or ... 06/22/06 - 20060134921 - Plasma etching process A plasma etching process is described. A substrate having a low-k material layer and a metal hard mask layer sequentially formed thereon is provided, wherein the metal hard mask layer exposes a portion of the low-k material layer. The low-k material layer is then etched with plasma of a gas ... 06/22/06 - 20060134920 - Passivating metal etch structures A method to passivate a freshly etched metal structure comprises providing a metal surface on a substrate that has been etched by a first particle beam, exposing the metal surface to a passivation gas, and exposing the freshly etched metal structures to a second particle beam in the presence of ... 05/18/06 - 20060105576 - High ion energy and reative species partial pressure plasma ash process A high ion energy and high pressure O2/CO-based plasma for ashing field photoresist material subsequent to via-level damascene processing. The optimized plasma ashing process is performed at greater than approximately 300 mT pressure and ion energy greater than approximately 500 W conditions with an oxygen partial pressure of greater than ... 05/11/06 - 20060099816 - System and method for plasma induced modification and improvement of critical dimension uniformity Novel interconnect structures possessing a OSG or polymeric-based (90 nm and beyond BEOL technologies) in which advanced plasma processing is utilized to reduce post lithographic CD non-uniformity (“line edge roughness”) in semiconductor devices. The novel interconnect structure has enhanced liner and seed conformality and is therefore capable of delivering improved ... 04/27/06 - 20060089004 - Adhering and releasing method for protective tape In a protective tape applying and separating method according to this invention, a protective tape applied by a tape applying mechanism to a surface of a wafer suction-supported by a chuck table is cut to a wafer configuration by a cutter unit. Subsequently, a protective tape having a weaker adhesion ... 04/06/06 - 20060073706 - Selective etching processes of silicon nitride and indium oxide thin films for feram device applications A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in ... 03/30/06 - 20060068593 - Patterning method A patterning method is provided. First, a substrate comprising a film formed thereon is provided. Then, a photoresist layer is formed over the film. Next, the photoresist layer is developed to form a patterned photoresist layer. Then, the film is etched using a dry etching method. In addition, the dry ... 03/23/06 - 20060063385 - Etching method and computer-readable storage medium An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined ... 03/16/06 - 20060057855 - Method for making toughening agent materials A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, ... 03/16/06 - 20060057854 - High frequency power supply device and plasma generator A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with ... 03/09/06 - 20060051967 - Wafer bevel polymer removal A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer ... 03/02/06 - 20060046496 - Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate A method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate using a gas mixture that includes a passivation gas. The passivation gas is provided to a peripheral region of the substrate to passivate sidewalls of the structures being etched. ... 02/09/06 - 20060030160 - Backside unlayering of mosfet devices for electrical and physical characterization A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor ... 01/19/06 - 20060014394 - Process for low temperature, dry etching, and dry planarization of copper The subject invention pertains to a method and apparatus for etching copper (Cu). The subject invention can involve passing a halide gas over an area of Cu such that CuX, or CuX and CuX2, are formed, where X is the halide. Examples of halides which can be utilized with the ... 01/12/06 - 20060009040 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum includes etching the conductive layer, and generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the plasma. The cleaning includes heating ... 12/29/05 - 20050287815 - Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch ... 12/29/05 - 20050287814 - H2o plasma for simultaneous resist removal and charge releasing An in-situ method of stripping a layer of resist from a substrate or wafer utilizes pure H2O plasma recipe to substantially prevent charges from accumulating on the substrate or wafer during stripping of the layer of resist. ... 12/29/05 - 20050287813 - Manufacturing method of semiconductor device and semiconductor manufacturing apparatus An apparatus for decreasing plasma-induced damage caused by exposure to plasma is provided in an apparatus for manufacturing semiconductor devices using plasma. An apparatus is used for irradiating the semiconductor surface with as least one of X-rays and UV-rays in a vacuum or in an inert atmosphere after plasma processing. ... 12/29/05 - 20050287812 - Method for repairing plasma damage after spacer formation for integrated circuit devices A method for processing integrated circuit memory devices. The method includes supporting a partially completed substrate, the substrate comprising a plurality of MOS gate structures. Each of the gate structures has substantially vertical regions that define sides of the gate structures. The method forms a conformal dielectric layer overlying the ... 12/08/05 - 20050272267 - Method suitable for batch ion etching of copper A method for etching metal deposited on a substrate, the method comprising: depositing a metal layer above a substrate; coating at least a portion of the deposited metal layer with a photo-resist; pattering the photo-resist; etching the deposited metal layer with an inert gas plasma at an energy density of ... 11/24/05 - 20050260858 - Versatile system for limiting electric field degradation of semiconductor structures The present invention provides a system for limiting degradation of a first semiconductor structure (304) caused by an electric field (314), generated from within the semiconductor substrate (302) by high voltage on a second semiconductor structure (310). A semiconductor device (300) is adapted to reduce the effective magnitude of the ... 10/27/05 - 20050239290 - Trench photolithography rework for removal of photoresist residue The present disclosure provides a method for removing photoresist residue from a low k dielectric above a semiconductor substrate. The method includes creating a first opening in the low k dielectric extending a first depth towards an underlying conductor, and applying and patterning a material above the low k dielectric. ... 10/20/05 - 20050233593 - Plating of multi-layer structures An insulating layer (5) and a conductive seed layer (6) are applied to a substrate (1) in a simple process. A photo resist with palladium chloride are provided in a bath for electrophoretic deposition onto the substrate. The photo resist is an insulator and the palladium chloride is a catalyst. ... 10/06/05 - 20050221618 - System for controlling a plenum output flow geometry A flow control system disrupts a reactive flow into a process chamber in order to shape the flow geometry issuing into a substrate processing chamber. In one embodiment, gas is injected into a chamber inlet in a direction which disrupts the reactive flow traveling through the chamber inlet. In another ... 09/29/05 - 20050215063 - System and methods for etching a silicon wafer using hf and ozone In a method of etching a silicon wafer in a controllable cost-effective manner with minimal chemical consumption, ozone gas and HF vapor are delivered into a process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed ... 08/18/05 - 20050181617 - Semiconductor processing equipment having improved particle performance A ceramic part having a surface exposed to the interior space, the surface having been shaped and plasma conditioned to reduce particles thereon by contacting the shaped surface with a high intensity plasma. The ceramic part can be made by sintering or machining a chemically deposited material. During processing of ... 07/28/05 - 20050164514 - Method for etching a quartz layer in a photoresistless semiconductor mask A chromeless phase lithography mask (30) that does not require photoresist to manufacture has a quartz substrate (32) is etched by using a plasma (38) containing one of a nitrogen augmented hydro-fluorocarbon oxygen mixture and a nitrogen augmented fluorocarbon oxygen mixture. Various hydro-fluorocarbons or fluorocarbons may be used. The nitrogen ... 07/14/05 - 20050153564 - Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to ... 06/30/05 - 20050142886 - Method for forming a contact in semiconductor device A method for forming a contact hole in a semiconductor device is disclosed. The method for forming a contact hole in a semiconductor device comprises depositing a nitride layer and an ILD on a substrate including predetermined devices; forming a first photoresist pattern on the ILD and making a via ... 06/23/05 - 20050136681 - Method and apparatus for removing photoresist from a substrate A method and system for removing photoresist from a substrate in a plasma processing system comprising: introducing a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble ... 06/23/05 - 20050136680 - Plasma treatment and etching process for ultra-thin dielectric films A method for dry etching a dielectric layer including providing a substrate; forming at least one overlying dielectric layer over the substrate; subjecting the at least one overlying layer to a plasma oxidizing process; and, subjecting the at least one overlying layer to a plasma etching process. ... 06/16/05 - 20050130435 - Method of preventing damage to porous low-k materials during resist stripping A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is ... 06/02/05 - 20050118828 - Method for removing photoresist A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides sufficient energy for the extra electrons caused by ... ### FreshPatents.com Support |