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Semiconductor Device Manufacturing: Process > Chemical Etching > Vapor Phase Etching (i.e., Dry Etching) > Utilizing Electromagnetic Or Wave Energy Utilizing Electromagnetic Or Wave EnergyUtilizing Electromagnetic Or Wave Energy patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072433 - Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded ... 03/29/07 - 20070072432 - Apparatus for the removal of a metal oxide from a substrate and methods therefor An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded ... 11/09/06 - 20060252271 - Atomic layer deposition using photo-enhanced bond reconfiguration An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are formed, a substrate or previous layer is exposed to a first reactant. After the substrate or layer has reacted with ... 05/11/06 - 20060099815 - Cooling system for a semiconductor device and method of fabricating same A cooling system for a semiconductor substrate incudes a plurality of trenches formed from a backside of the semiconductor substrate, and thermally conductive material deposited in the plurality of trenches. A method of forming cooling elements in a semiconductor substrate, includes coating a backside of the semiconductor substrate with a ... 07/28/05 - 20050164513 - Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the lower electrode 28 is powered by a low ... ### FreshPatents.com Support |