REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Chemical Etching > Combined With The Removal Of Material By Nonchemical Means (e.g., Ablating, Abrading, Etc.) > Combined Mechanical And Chemical Material Removal > Simultaneous (e.g., Chemical-mechanical Polishing, Etc.) Simultaneous (e.g., Chemical-mechanical Polishing, Etc.)Simultaneous (e.g., Chemical-mechanical Polishing, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087570 - Planarization of a heteroepitaxial layer A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between ... 04/19/07 - 20070087569 - Method for fabricating semiconductor device A method for fabricating a semiconductor device includes forming a plurality of gate patterns over a substrate, each gate pattern comprising a hard mask and a gate electrode, forming a photoresist layer over the gate patterns, performing a planarizing process until the hard masks of the gate patterns are exposed ... 04/12/07 - 20070082491 - Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric ... 03/29/07 - 20070072427 - Method for fabricating semiconductor device and polishing method A method for fabricating a semiconductor device includes forming a copper film above a surface of a substrate, forming on a polishing pad a material which contains copper, wherein said copper does not derive from said copper film, and after having formed the copper-containing material on said polishing pad, polishing ... 03/29/07 - 20070072426 - Chemical mechanical polishing process and apparatus therefor A CMP process and a CMP apparatus therefor are provided. First, a substrate including a semiconductor structure, a liner layer over the semiconductor structure and a metal layer over the liner layer is provided. Next, a metal polishing step is performed to polish the metal layer until a portion of ... 03/29/07 - 20070072425 - Substrate and method for producing same A substrate according to the present invention includes a metal plate, and an insulating film, which is provided on the surface of the metal plate and which includes needle alumina particles and granular particles. The substrate of the present invention has excellent insulating property and can be manufactured on an ... 03/15/07 - 20070059936 - Electronic sensing circuit A sensor (10) has an output coupled to a first comparator input. A control circuit (18) is arranged to switch from an upward tracking mode to a downward relative level detection mode, to a downward tracking mode, to an upward relative level detection mode and back to the upward tracking ... 03/01/07 - 20070049033 - Film tray for fabricating flexible display A film tray for fabricating a flexible display, the film tray preventing a flexible substrate or film from sagging. The film tray includes a support plate and at least one pair of clamps, each clamp of the at least one pair of clamps located along an opposite edge of the ... 02/08/07 - 20070032084 - Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the thickness of semiconductor material. The method ... 02/08/07 - 20070032083 - Planarization method for manufacturing semiconductor device A method for planarizing a layer of a semiconductor device includes heating the layer to exhibit flowability, and applying pressure through an optically flat surface layer onto the layer to planarize the layer. And the planarizing method further comprises etch-back or chemical-mechanical polishing on the planarized layer. ... 01/25/07 - 20070020939 - Controlled geometry hardmask including subresolution elements Methods for forming accurate, symmetric cross-section spacers of hardmask material on a substrate such as a silicon wafer or quartz substrate, for formation of precise subresolution features useful for forming integrated circuits. The resulting symmetrical hardmask spacers with their symmetric upper portions may be used to accurately etch well-defined, high ... 01/18/07 - 20070015366 - Semiconductor device and programming method The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the ... 01/18/07 - 20070015365 - Method and apparatus for enhanced cmp planarization using surrounded dummy design In one embodiment, the disclosure relates to a method and apparatus for inserting dummy patterns in sparsely populated portions of a metal layer. The dummy pattern counters the effects of variations of pattern density in a semiconductor layout which can cause uneven post-polish film thickness. An algorithm according to one ... 01/18/07 - 20070015364 - Method for avoiding exposure of void caused by dielectric gap-filling, and fabricating process and structure of dielectric film A method for avoiding exposure of a void caused by dielectric gap-filling is described. An etching-resistant layer is formed on only a portion of the dielectric layer over the gap covering at least the dielectric layer over the void, so that the void is not exposed in a subsequent etching ... 01/11/07 - 20070010098 - Use of cmp for aluminum mirror and solar cell fabrication The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abrading at least a portion of ... 01/04/07 - 20070004211 - Methods of fabricating a semiconductor substrate for reducing wafer warpage Methods of fabricating a semiconductor device can include forming at least one layer on a first and a second side of a semiconductor substrate. Portions of the at least one layer may be removed on the first side of the semiconductor substrate to form a pattern of the at least ... 01/04/07 - 20070004210 - Polishing composition and polishing method wherein R is a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a carboxylic acid group. ... 01/04/07 - 20070004209 - Slurry for chemical mechanical polishing of aluminum Described herein are embodiments of a slurry used for the chemical mechanical polishing a substrate that includes aluminum or an aluminum alloy features having a width of less than 1 um. The slurry includes a precipitated silica abrasive having a diameter of less than or equal to 100 nm and ... 12/07/06 - 20060276042 - Versatile system for conditioning slurry in cmp process The present invention provides a system (100) for conditioning multi-component slurries utilized in chemical mechanical polishing (CMP) of semiconductor wafers (140). The system provides a first slurry component (108), and a second slurry component (120). A conditioning component (102) has first and second inlets, and an outlet operatively coupled to ... 12/07/06 - 20060276041 - Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic ... 11/30/06 - 20060270237 - Apparatus and method for pre-conditioning cmp polishing pad An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing ... 11/30/06 - 20060270236 - Semiconductor device and manufacturing method thereof To provide a thin film integrated circuit at low cost and with thin thickness, which is applicable to mass production unlike the conventional glass substrate or the single crystalline silicon substrate, and a structure and a process of a thin film integrated circuit device or an IC chip having the ... 11/30/06 - 20060270235 - Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the ... 11/30/06 - 20060270234 - Method and composition for preparing a semiconductor surface for deposition of a barrier material A method for making a semiconductor device includes cleaning a semiconductor wafer after a chemical mechanical polishing (CMP) process to remove or reduce particles of copper, a corrosion inhibitor such as triazole, and a copper oxide layer on the copper layer. In order to prepare for plating the copper layer ... 11/23/06 - 20060264052 - Method of forming a platinum pattern A solution for platinum chemical mechanical polishing is disclosed. Further, a method for forming Pt patterns is disclosed which utilizes the disclosed Pt-CMP solution which contains an alkali aqueous solution and an oxidizer which improves the polishing rate and polishing characteristics of Pt which forms a lower electrode of a ... 11/09/06 - 20060252268 - Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer. The method includes use of a polishing pad with a slurry solution in which copper and a material, such as tungsten, of the barrier layer are removed at substantially the ... 11/09/06 - 20060252267 - Topology-selective oxide cmp A method of performing chemical mechanical polishing (CMP) is described herein. By way of example, substantially undiluted slurry is applied to a polishing pad. A first CMP process is performed using the substantially undiluted slurry on a semiconductor wafer applying a first amount of pressure. The first CMP process is ... 11/09/06 - 20060252266 - Cmp process of high selectivity A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second grooves crossing the first grooves thereon is provided. The polishing pad and a high-selectivity slurry are then used ... 11/02/06 - 20060246726 - Making contact with the emitter contact of a semiconductor A semiconductor device having contact surfaces of different heights electrically connected to conductors defined on one or more patterned metal planes and a method for fabricating the semiconductor device. In one embodiment, the semiconductor device comprises a substrate having a process surface; a first contact and a second contact arranged ... 11/02/06 - 20060246725 - Hardening of copper to improve copper cmp performance A method for reducing the topography from CMP of metal layers during the semiconductor manufacturing process is described. Small amounts of solute are introduced into the conductive metal layer before polishing, resulting in a material with electrical conductivity and electromigration properties that are very similar or superior to that of ... 11/02/06 - 20060246724 - Method for polishing wafer There is provided a method for polishing a wafer in which linear defects are not generated. The polishing method comprises the steps of: holding a wafer on a rotatable wafer holding plate; and polishing a surface of the being in contact with a polishing cloth adhered on a rotatable table ... 11/02/06 - 20060246723 - Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition A method for controlling a selection ratio of a chemical-mechanical-polishing slurry composition for polishing and ablating an oxide layer selectively in relation to a nitride layer, the method includes: a step of confirming a polishing-rate selection ratio of an oxide layer to a nitride layer of a chemical-mechanical-polishing slurry composition ... 10/26/06 - 20060240672 - Polishing liquid composition A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing ... 10/19/06 - 20060234509 - Cerium oxide abrasives for chemical mechanical polishing The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of solid cerium-containing phases selected from CeO2, Ce2O3, cerium-nitride material, cerium-fluoride ... 10/05/06 - 20060223319 - Chemical mechanical polishing method for manufacturing semiconductor device Disclosed herein is a chemical mechanical polishing (CMP) method for manufacturing a semiconductor device, comprising performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film, and subjecting the partially ion implanted-wafer to a chemical mechanical ... 09/28/06 - 20060216939 - Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an ... 09/28/06 - 20060216938 - Method of forming pattern A method of forming a pattern, including forming first and second films, and a resist film on the second film, patterning the resist film to form a first pattern, etching the first pattern to narrow a width of the lines of the first pattern, etching the second film by using ... 09/28/06 - 20060216937 - Method for reducing dielectric overetch using a dielectric etch stop at a planar surface A substantially planar surface coexposes conductive or semiconductor features and a dielectric etch stop material. A second dielectric material, different from the dielectric etch stop material, is deposited on the substantially planar surface. A selective etch etches a hole or trench in the second dielectric material, so that the etch ... 09/21/06 - 20060211250 - Scratch reduction for chemical mechanical polishing A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish ... 09/14/06 - 20060205219 - Compositions and methods for chemical mechanical polishing interlevel dielectric layers The present invention provides an aqueous composition useful for polishing dielectric layers on a semiconductor wafer in interlevel dielectric processes comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.01 to 20 colloidal silica, 0 to 5 surfactant, 0 to 5 carboxylic acid polymer, and balance water. ... 09/14/06 - 20060205218 - Compositions and methods for chemical mechanical polishing thin films and dielectric materials The present invention provides an aqueous composition useful for polishing conducting, semi-conducting and dielectric materials on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to 5 cationic compound, 0.5 to 10 abrasive, 0 to 5 inorganic acids and salts thereof, and balance water, wherein the ... 09/14/06 - 20060205217 - Method and system for reducing wafer edge tungsten residue utilizing a spin etch A method and system for reducing wafer edge residue following a chemical mechanical polishing operation. A semiconductor wafer can be polished utilizing a chemical mechanical polishing apparatus. Thereafter, an acid etch operation may be performed to remove a residue, such as tungsten (W), collected on the semiconductor wafer as a ... 08/24/06 - 20060189140 - Insulated pad conditioner and method of using same A wafer planarization process with a conditioning tool having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool. The electrical insulator extends the useful life of the abrasive surface of the conditioning tool by reducing the level of electrochemically driven corrosion. ... 08/24/06 - 20060189139 - Methods and apparatuses for electrochemical-mechanical polishing Methods and apparatuses for removing material from a microfeature workpiece are disclosed. In one embodiment, the microfeature workpiece is contacted with a polishing surface of a polishing medium, and is placed in electrical communication with first and second electrodes, at least one of which is spaced apart from the workpiece. ... 08/24/06 - 20060189138 - Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface damaged layer and polishing remnants to be controlled easily. An insulating film on a substrate, which has ... 08/17/06 - 20060183334 - Methods for planarization of group viii metal-containing surfaces using oxidizing gases A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing gas. ... 08/17/06 - 20060183333 - Methods of fabricating semiconductor device using sacrificial layer There are provided methods of fabricating a semiconductor device using a sacrificial layer. The methods provide an approach to maintaining thickness distribution of the interlayer insulating layers below a sacrificial layer uniform on an overall surface of a semiconductor substrate during performing a chemical mechanical polishing (CMP) process in a ... 07/27/06 - 20060166503 - Polishing apparatus and polishing method A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a ... 07/13/06 - 20060154485 - Sacrificial layers comprising water-soluble compounds, uses and methods of production thereof Sacrificial composition and/or coating materials contemplated herein for use in semiconductor and electronic applications comprise at least one water-soluble compound and/or at least one water-soluble compound precursor and at least one solvent. Sacrificial materials and/or compositions may be produced by a method, comprising: a) providing at least one water-soluble compound ... 07/06/06 - 20060148261 - Methods and apparatus for polishing control A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the ... 07/06/06 - 20060148260 - Selective polish for fabricating electronic devices A selective polish for fabricating electronic devices is disclosed. The selective polish may include the use of a slurry that facilitates the selective polish of a first component but does not substantially polish a second component. ... 06/29/06 - 20060141792 - Process for manufacturing semiconductor integrated circuit device In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP). method, a process for manufacturing. a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main ... 06/29/06 - 20060141791 - Method for fabricating a semiconductor device The method includes chemical-mechanical polishing to planarize an insulating interlayer deposited on a lower pattern. The insulating interlayer is polished using a surfactant. The chemical-mechanical polishing includes at least two separate polishing steps of different fluxes of the surfactant. The first polishing step is performed for touching up an upper ... 06/22/06 - 20060134916 - Poly open polish process A method of fabricating microelectronic structure using at least two material removal steps, such as for in a poly open polish process, is disclosed. In one embodiment, the first removal step may be chemical mechanical polishing (CMP) step utilizing a slurry with high selectivity to an interlevel dielectric layer used ... 06/22/06 - 20060134915 - Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit The method of manufacturing an integrated circuit (IC) according to the invention starts with providing a pre-fabricated integrated circuit (10) comprising an electrical device (2) and having a surface (11) coated with a dielectric material (12) and a metal (15). The dielectric material (12), which may be separated from the ... 06/15/06 - 20060128154 - Glass substrate for magnetic disk and its production process A doughnut-type glass substrate for a magnetic disk having a circular hole at its center, characterized in that its inner peripheral edge surface is an etched surface with a large number of pits having different curvature radii adjacent to one another, and the proportion of pits having curvature radii r ... 06/15/06 - 20060128153 - Method for cleaning slurry particles from a surface polished by chemical mechanical polishing A method is provided to clean slurry particles from a surface in which tungsten and dielectric are coexposed after a dielectric CMP step. Such a surface is formed when tungsten features are patterned and etched, the tungsten features are covered with dielectric, and the dielectric is planarized to expose tops ... 06/01/06 - 20060115987 - Semiconductor device having recess and planarized layers A method for forming a floating gate semiconductor device such as an electrically erasable programmable read only memory is provided. The device includes a silicon substrate having an electrically isolated active area. A gate oxide, as well as other components of a FET (e.g., source, drain) are formed in the ... 05/25/06 - 20060110924 - Abrasive-free chemical mechanical polishing compositions and methods relating thereto An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modified cellulose, 0 to 15 weight percent phosphorus compound, 0.005 to 5 weight ... 05/25/06 - 20060110923 - Barrier polishing solution The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, inhibitor for reducing removal rate of the nonferrous interconnect metals, ammonium salt, 0.1 to 50 weight percent silica ... 05/11/06 - 20060099814 - Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide. ... 04/27/06 - 20060089000 - Material and process for etched structure filling and planarizing In the back end of integrated circuits employing low-k interlevel dielectrics, etched structures are filled with a planarizing material comprising a cyclic olefin polymer and solvent; the next pattern to be etched is defined in a photosensitive layer above the planarizing layer; the pattern is etched in the dielectric and ... 04/20/06 - 20060084272 - Polishing slurries for copper and associated materials A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high ... 04/20/06 - 20060084271 - Systems, methods and slurries for chemical mechanical polishing Process, slurries formulation and polishing mechanism are disclosed for the formation of silver (Ag) or Ag alloy film features on a substrate using CMP. The process and slurries can achieve Ag or Ag alloy film features with good planarization, low roughness, high reflectivity, and low defectivity. ... 04/13/06 - 20060079092 - Polishing method The present invention is relates to a polishing method for polishing a semiconductor wafer (W) by pressing the semiconductor wafer (W) against a polishing surface (10) with use of a top ring (23) for holding the semiconductor wafer (W). A pressure chamber (70) is defined in the top ring (23) ... 03/02/06 - 20060046491 - Cmp polishing method and method for manufacturing semiconductor device A wafer substrate having a wiring pattern formed between materials with a dielectric constant of 2 or less is polished with the polishing pressure being set at 0.01 to 0.2 psi. As a result, favorable polishing can be performed even in cases where a ultra-low-k material having the dielectric constant ... 03/02/06 - 20060046490 - Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition ... 02/16/06 - 20060035465 - Methods for reducing a thickness variation of a nitride layer formed in a shallow trench isolation cmp process and for forming a device isolation film of a semiconductor device A method for reducing a thickness variation of a nitride layer in a shallow trench isolation (STI) CMP process is provided, the method including forming an active region pattern in an alignment key region of a scribe lane where a device isolation film is formed at an ISO level, and ... 02/09/06 - 20060030158 - Compositions and methods for tantalum cmp A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, ... 02/09/06 - 20060030157 - Methods and apparatus configurations for affecting movement of processing fluids within a microelectronic topography chamber and a method for passivating hardware within a microelectronic topography processing chamber An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the ... 02/02/06 - 20060024967 - Polishing composition for noble metals The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. ... 01/19/06 - 20060014390 - Slurry composition, polishing method using the slurry composition and method of forming a gate pattern using the slurry composition A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry ... 12/22/05 - 20050282390 - Polishing composition for semiconductor wafers An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride ... 12/22/05 - 20050282389 - Semiconductor device fabrication method A semiconductor device fabrication method according to the invention comprises the steps of: (1) exposing a silicon layer by removing a portion of an insulating layer above a projected part of the silicon layer, the insulating layer covering the silicon layer; and (2) chemically and mechanically polishing the exposed silicon ... 12/01/05 - 20050266688 - Semiconductor device fabrication method The semiconductor device fabrication method comprises the step of conditioning the surface of a polishing pad 104 while a liquid 126 is being fed onto the polishing pad 104; the step of spraying water 128 onto the polishing pad 104 to clean the surface of the polishing pad 104 after ... 11/10/05 - 20050250334 - Polishing method for semiconductor substrate, and polishing jig used therein During the polishing of a semiconductor substrate, the semiconductor wafer that has been reduced in thickness, and hence in strength, by polishing, suffers outer-surface damage (or cracking) due to the initial damage caused by the use of polishing quartz. In order to solve these problems, the present invention applies a ... 11/10/05 - 20050250333 - Method and composition to minimize dishing Processes are disclosed for producing electronic interconnect devices, particularly semi-conductor wafers, with metal interconnect traces thereon wherein the surface of said device has improved planarity. Said planarity is achieved initially through the use of pulse reverse electrolytic plating techniques. Planarity is further enhanced by cathodically protecting the metal interconnect traces ... 11/10/05 - 20050250332 - Method for preventing cu contamination and oxidation in semiconductor device manufacturing A method for reducing or preventing contamination or oxidation of copper surfaces included in semiconductor process wafers including providing a semiconductor wafer including copper features having newly formed process surfaces following a semiconductor manufacturing process forming the newly formed process surfaces; exposing the process surfaces to an alkaline solution for ... 10/27/05 - 20050239289 - Method for reducing integrated circuit defects Post chemical mechanical polishing (CMP) cleaning methods are disclosed which reduce integrated circuit defects. A corrosion inhibitor is preferably applied during the post-CMP cleaning steps after application of a first chemistry. Subsequent to the application of the corrosion inhibitor a rinsing step using deionized water is employed. In this manner, ... 10/13/05 - 20050227491 - Methods of forming integrated circuit devices having polished tungsten metal layers therein Methods of forming integrated circuit devices use metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ≧8 wt %) in combination with sufficient quantities of ... 10/13/05 - 20050227490 - Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around ... 10/13/05 - 20050227489 - Polishing pad and method of manufacturing semiconductor devices Disclosed is a CMP pad which is abrasive-free and comprises cells and/or a recessed portion-forming material both having an average diameter ranging from 0.05 to 290 μm and occupying a region ranging from 0.1% by volume to 5% by volume based on an entire volume of the pad, and an ... 10/06/05 - 20050221615 - Method of processing a substrate There is disclosed a method of processing a substrate, which comprises applying a surfactant or a water soluble polymer agent onto a surface of a substrate to be processed, and sliding a circumferential portion of the substrate and a polishing member against each other to polish the circumferential portion of ... 09/29/05 - 20050215060 - Polishing composition and polishing method A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is ... 09/15/05 - 20050202678 - Semiconductor wafer front side protection There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second ... 09/15/05 - 20050202677 - Method for dishing reduction and feature passivation in polishing processes Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing ... 09/15/05 - 20050202676 - Insulated pad conditioner and method of using same A wafer planarization process with a conditioning tool having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool. The electrical insulator extends the useful life of the abrasive surface of the conditioning tool by reducing the level of electrochemically driven corrosion. ... 09/08/05 - 20050196964 - Dummy fill for integrated circuits A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The described methods use process variation and electrical impact to direct the ... 09/08/05 - 20050196963 - Methods and apparatuses for electrochemical-mechanical polishing Methods and apparatuses for removing material from a microfeature workpiece are disclosed. In one embodiment, the microfeature workpiece is contacted with a polishing surface of a polishing medium, and is placed in electrical communication with first and second electrodes, at least one of which is spaced apart from the workpiece. ... 09/01/05 - 20050191860 - Method for forming semiconductor device A method for forming a semiconductor device includes the steps of forming, on a substrate, a flowable film made of an insulating material with flowability; planarizing a top face of the flowable film by pressing the flowable film with a pressing member; forming a solidified film by annealing the flowable ... 09/01/05 - 20050191859 - Method of evaluating film thickness, method of detecting polishing terminal, and device-manufacturing apparatus A method of evaluating a thickness of a film during a polishing process includes the steps of irradiating light onto a surface of the film during the polishing process; obtaining a differential signal of reflection spectra at a polishing time t and a polishing time t−Δt with a time difference ... 08/25/05 - 20050186799 - Chemical-mechanical polishing method A chemical-mechanical polishing process for forming a metallic interconnect includes the steps of providing a semiconductor substrate having a first metallic line thereon, and then forming a dielectric layer over the substrate and the first metallic line. Next, a chemical-mechanical polishing method is used to polish the surface of the ... 08/11/05 - 20050176253 - Method of manufacturing semiconductor device A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP ... 08/11/05 - 20050176252 - Two-stage load for processing both sides of a wafer Disclosed herein is an apparatus and method for treating the frontside and backside of a semiconductor substrate with a process gas. A reactor chamber is equipped with a first load platform configured to permit the access of a process gas to both sides of a substrate. In some embodiments, the ... 08/11/05 - 20050176251 - Polishing pad with releasable slick particles The present invention provides a polishing pad useful for polishing a semiconductor substrate, the polishing pad comprising: a polishing layer having a polishing surface, the polishing layer comprising particles disposed in a polymeric matrix, the particles being coated with a material having a surface tension of less than 50 dynes/cm, ... 07/28/05 - 20050164510 - Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives ... 07/21/05 - 20050159005 - Semiconductor device manufacture method An electric conductive film is formed on the insulating surface of a substrate, the substrate having a trench formed on the insulating surface, and the conductive film being filled in the trench. Chemical mechanical polishing is executed to expose the insulating surface of the substrate and leave a portion of ... 07/21/05 - 20050159004 - System for reducing corrosion effects of metallic semiconductor structures The present invention defines a system for impeding corrosive egress from a metallic trench structure (206) during the production of a semiconductor device segment (200). The system of the present invention provides a first non-metallic structure (212) and a second non-metallic structure (214). The metallic trench structure is interposed between ... 07/14/05 - 20050153561 - Chemical mechanical polishing a substrate having a filler layer and a stop layer A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed. ... 07/14/05 - 20050153560 - Method of manufacturing a semiconductor device In a method of manufacturing a semiconductor device that prevents formation of scratches and occurrence of dishing in a CMP process utilizing a ceria slurry is to be provided. The method includes forming a first film on a part of a semiconductor substrate, forming a second film all over the ... 07/14/05 - 20050153559 - Broad band duv, vuv long-working distance catadioptric imaging system A high performance objective having very small central obscuration, an external pupil for apertureing and Fourier filtering, loose manufacturing tolerances, large numerical aperture, long working distance, and a large field of view is presented. The objective is preferably telecentric. The design is ideally suited for both broad-band bright-field and laser ... 07/14/05 - 20050153558 - Molded abrasive brush and methods of using for manufacture of printed circuit boards A molded brush segment having a plurality of integrally molded bristles extending from a generally planar center portion. The brush segment is molded from a moldable polymer, such as a thermoplastic elastomer, and has a plurality of abrasive particles present in at least the bristles of the brush segment. ... 07/07/05 - 20050148186 - Slurry composition with high planarity and cmp process of dielectric film using the same Disclosed herein are a CMP slurry composition with high-planarity and a CMP process for polishing a dielectric film using the same. More specifically, a CMP slurry composition with high-planarity includes a carbon compound having tens of thousands of carboxyl groups and having a molecular weight ranging from hundreds of thousands ... 07/07/05 - 20050148185 - Polishing cloth and method of manufacturing semiconductor device A polishing cloth used in the chemical mechanical polishing treatment comprises a molded body of (meth)acrylic copolymer having an acid value of 10 to 100 mg KOH/g and a hydroxyl group value of 50 to 150 mg KOH/g. ... 07/07/05 - 20050148184 - Chemical mechanical polishing process for forming shallow trench isolation structure A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the ... 07/07/05 - 20050148183 - Polishing pad, platen hole cover, polishing apparatus, polishing method, and method for fabricating semiconductor device It is an object of the present invention to provide a windowed polishing pad or a platen hole cover which is used to form planar surfaces in glass, semiconductors, dielectric/metal composites, integrated circuits, etc.; a polishing apparatus including the windowed polishing pad or the platen hole cover; a method for ... 06/30/05 - 20050142883 - Apparatus and method for supplying chemicals A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided from the first and second mixing tanks such that the slurry is continuously available to a precessing apparatus for maximum efficiency. While one ... 06/30/05 - 20050142882 - Semiconductor water manufacturing method and wafer The present invention provides a method for manufacturing a semiconductor wafer capable of manufacturing a wafer without ring-like sag in an outer peripheral portion thereof when polishing an alkali etched wafer, and a wafer without the ring-like sag in an outer peripheral portion thereof. The present invention comprises: a back ... 06/16/05 - 20050130430 - Method for chemical mechanical polishing for fabricating semiconductor device Disclosure is a method for a chemical mechanical polishing process for fabricating a semiconductor device. The method for performing the chemical mechanical polishing process for a copper layer on a semiconductor wafer comprises the steps of: performing the chemical mechanical polishing process for the copper layer on the semiconductor wafer ... 06/09/05 - 20050124165 - Method for cmp removal rate compensation A method for polishing a material layer on a semiconductor wafer to a desired target layer thickness. The method includes calculating a compensated removal rate based on the thickness of material to be removed from a material layer on the wafer according to a standard value; the current material removal ... 06/02/05 - 20050118824 - Multi-step chemical mechanical polishing of a gate area in a finfet A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” planarization. The slurry used for the finer planarization may include added ... 06/02/05 - 20050118823 - Wafer processing method and wafer processing apparatus There are provided a wafer processing method comprising the steps of grinding an underside (21) of a wafer which is provided, on its front surface (29), with a plurality of semiconductor devices (10); polishing a ground surface (22) formed by the grinding operation; and carrying out a plasma-processing for a ... ### FreshPatents.com Support |