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Semiconductor Device Manufacturing: Process > Chemical Etching > Combined With The Removal Of Material By Nonchemical Means (e.g., Ablating, Abrading, Etc.) > Combined Mechanical And Chemical Material Removal Combined Mechanical And Chemical Material RemovalCombined Mechanical And Chemical Material Removal patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082490 - Apparatus of chemical mechanical polishing and chemical mechanical polishing process An apparatus of chemical mechanical polishing has a polishing machine, a first thickness metrology and a second thickness metrology. The first thickness metrology is connected with the polishing machine, and the second thickness metrology is connected with the polishing machine. Since the thickness of the first material layer and the ... 04/05/07 - 20070077764 - Polishing method, polishing composition and polishing composition kit A polishing method for polishing a polysilicon film provided on a silicon substrate having an isolation region is provided. The method includes preliminarily polishing the polysilicon film using a preliminary polishing composition containing abrasive grains, an alkali, a water-soluble polymer, and water till a part of the top surface of ... 03/22/07 - 20070066066 - Polishing method for glass substrate, and glass substrate A surface of a glass substrate containing SiO2 as the main component, is polished with a polishing slurry comprising colloidal silica having an average primary particle size of at most 50 nm, an acid and water, and having the pH adjusted to be within a range of from 0.5 to ... 03/22/07 - 20070066065 - Metal-polishing liquid and chemical-mechanical polishing method The present invention provides a metal-polishing liquid comprising an oxidizing agent and a heterocyclic aromatic ring compound, wherein the time until the oxidation reaction rate is (E1+E2)/2 is shorter than 1.0 second, E1 being an oxidation reaction rate immediately after initiation of oxidation of a metal surface to be polished ... 03/01/07 - 20070049032 - Protective coating for planarization Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer ... 10/19/06 - 20060234508 - Substrate processing apparatus and substrate processing method There is provided a substrate processing apparatus which can process a substrate by using an electrolytic processing method, while reducing a load upon a CMP processing to the least possible extent. The substrate processing apparatus of the present invention includes: an electrolytic processing unit (36) for electrolytically removing the surface ... 09/28/06 - 20060216936 - Chemical and mechanical polishing method and polishing liquid using therefor A polishing method comprising chemically and mechanically polishing a surface to be polished, the polishing comprising a plurality of steps, wherein the surface is polished with a polishing liquid containing an oxidant in each of the plurality of steps, and the polishing liquids used for the each of the steps ... 09/28/06 - 20060216935 - Composition for oxide cmp in cmos device fabrication The present invention provides an oxide CMP slurry composition for use in planarizing silicon oxide-containing films via CMP during CMOS device fabrication, and a method of planarizing silicon oxide-containing films via CMP using the slurry composition. The oxide CMP slurry composition according to the invention includes: (i) proline, lysine and/or ... 09/07/06 - 20060199389 - Method of manufacturing semiconductor device having planarized interlayer insulating film A method of manufacturing a semiconductor device according to the present invention, comprising the steps of: forming a first insulating film on a substrate that is provided with a structure; forming a second insulating film on the first insulating film; polishing at least the second insulating film; forming a third ... 08/24/06 - 20060189137 - Method of forming damascene filament wires and the structure so formed A method of forming a semiconductor device, and the device so formed. Depositing a low dielectric constant material on a substrate. Depositing a hard mask on the low dielectric constant material. Forming an at least one first feature within the low dielectric constant material and the hard mask. Depositing a ... 08/17/06 - 20060183332 - Method of manufacturing floating structure A method of manufacturing a floating structure capable of providing increased device yield. The method includes: a) forming an insulation film, a predetermined area of which is removed, between a first substrate and a second substrate; and b) forming a floating structure in the removed predetermined area. ... 07/27/06 - 20060166502 - Semiconductor constructions The invention includes a method of forming a planarized surface over a semiconductor substrate. A substrate is provided which includes a memory array region and a peripheral region proximate the memory array region. The memory array region has a higher average elevational height than the peripheral region. Polysilazane is formed ... 07/06/06 - 20060148259 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device in accordance with an embodiment of the present invention provides performing a CMP process using high selectivity slurry until the hard mask nitride film is exposed so as to reduce the thickness to be removed in a subsequent CMP process, forming an landing ... 06/29/06 - 20060141790 - Chemical mechanical polishing method In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer ... 05/11/06 - 20060099813 - Chemical mechanical polish of pcmo thin films for rram applications A method of fabricating a CMR layer in a CMOS device using CMP to pattern the CMR layer includes preparing a silicon substrate, including fabrication of a bottom electrode in the silicon substrate; depositing a layer of SiNx on the substrate; patterning and etching the SiNx layer to form a ... 04/20/06 - 20060084270 - Composition for selectively polishing silicon nitride layer and polishing method employing it To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate of a silicon nitride layer is obtainable, and ... 02/09/06 - 20060030156 - Abrasive conductive polishing article for electrochemical mechanical polishing Articles of manufacture and processes for planarizing a layer on a substrate are provided. In one aspect, a process is provided for manufacturing a polishing article comprising combining a conductive material component and components of a binder material to form a composite material, at least partially curing the composite material, ... 02/09/06 - 20060030155 - Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method of forming metal wiring may employ ... 01/05/06 - 20060003587 - Grinding method for a sapphire wafer The present invention discloses a grinding method for a sapphire wafer, wherein a sapphire wafer is firstly provided, and the sapphire wafer has a substrate and an electrically-conductive layer; the sapphire wafer is fixed onto a fixing base; the fixing base is further fixed to a machining table, and the ... 12/22/05 - 20050282388 - Imprinting lithography using the liquid/solid transition of metals and their alloys A method is provided for imprinting a pattern having nanoscale features from a mold into the patternable layer on a substrate. The method comprises: providing the mold; forming the patternable layer on the substrate; and imprinting the mold into the patternable layer, wherein the patternable layer comprises a metal or ... 11/10/05 - 20050250331 - Fabrication method of semiconductor integrated circuit device A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of ... 09/01/05 - 20050191858 - Substrate processing method and apparatus A substrate processing apparatus can process a substrate having a metal film formed thereon. The substrate processing apparatus has a process unit configured to remove a native oxide of a metal film formed on a surface of a substrate. The substrate processing apparatus also has a planarization unit configured to ... 08/18/05 - 20050181615 - Integrated circuit process monitoring and metrology system A method for monitoring polishing process parameters for an integrated circuit structure on a substrate. A first metrology site is constructed on the substrate. The first metrology site represents a design extreme of a high density integrated circuit structure. The first metrology site is formed by placing a relatively small ... 08/11/05 - 20050176250 - Polishig fluid for metallic films and method for producing semiconductor substrate using the same A polishing fluid for metallic films, wherein the etching rate is 10 nm/min. or less, the polishing rate under a load of 10 KPa is 200 nm/min. or more, and the contrast, a ratio of the above-mentioned polishing rate to the etching rate, is 20 or more; and a method ... 07/28/05 - 20050164509 - Method of protecting semiconductor wafer and adhesive film for protection of semiconductor wafer The present invention is to provide a protecting method for a semiconductor wafer and an adhesive film for protection of a semiconductor wafer which makes it possible to straighten or avoid warpage in a semiconductor wafer and to prevent breakage of wafers during conveyance of wafers even if the thickness ... 07/14/05 - 20050153557 - Apparatus and method for treating susbtrates The polishing apparatus according to the present invention comprises a polishing section including a top ring for holding a workpiece to be polished and a turntable having a polishing surface for polishing a surface of the workpiece held by the top ring; a cleaning section including a cleaning device for ... 07/14/05 - 20050153556 - Methods for polishing copper features of semiconductor devices structures A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer includes use of a slurry that is formulated so as to oxidize copper at substantially the same rate as or at a faster rate than a material of the barrier ... 07/14/05 - 20050153555 - Method for chemical mechanical polishing of a shallow trench isolation structure A method for chemical mechanical polishing (CMP) of a shallow trench isolation (STI) structure employs a sequence of slurry polishes. In the first step the substrate is polished with either silica-based slurry or diluted ceria-based slurry. The first polishing is at a higher removal rate than the second polishing step. ... 06/23/05 - 20050136672 - Etching solution composition for metal films The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an ... 06/23/05 - 20050136671 - Compositions and methods for low downforce pressure polishing of copper The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising by weight percent 1 to 15 oxidizer, 0.1 to 1 inhibitor for a nonferrous metal, 0.05 to 3 complexing agent for the ... 06/23/05 - 20050136670 - Compositions and methods for controlled polishing of copper The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer comprising by weight percent 0.001 to 6 inhibitor for a nonferrous metal, 0.05 to 10 complexing agent for the metal, 0.01 to 25 copper removal agent for accelerating the removal of the copper, 0.5 to ... 06/02/05 - 20050118822 - Apparatus and process for bulk wet etch with leakage protection When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. ... 06/02/05 - 20050118821 - Slurry for cmp, polishing method and method of manufacturing semiconductor device Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle ... ### FreshPatents.com Support |