REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Chemical Etching > Combined With The Removal Of Material By Nonchemical Means (e.g., Ablating, Abrading, Etc.) Combined With The Removal Of Material By Nonchemical Means (e.g., Ablating, Abrading, Etc.)Combined With The Removal Of Material By Nonchemical Means (e.g., Ablating, Abrading, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072424 - Method of manufacturing silicon rich oxide (sro) and semiconductor device employing sro Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to ... 03/15/07 - 20070059935 - Polishing method for semiconductor wafer A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50-60 wt %/40-50 wt %, a modulus of elasticity of 1.4×1010 Pa or higher and a particle size of 1 ... 03/08/07 - 20070054494 - Method for planarizing semiconductor structures A method for planarizing a semiconductor structure is disclosed. A semiconductor substrate having a first area in which one or more trenches are formed in a first pattern density, and a second area in which one or more trenches are formed in a second pattern density lower than the first ... 02/01/07 - 20070026679 - Method and structure for aluminum chemical mechanical polishing and protective layer A method for chemical mechanical polishing of mirror structures. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method includes forming a first dielectric layer overlying the semiconductor substrate and forming an aluminum layer overlying the first dielectric layer, the aluminum layer having an upper surface with a ... 01/11/07 - 20070010097 - Apparatus and method for selected site backside unlayering of silicon, gaas, gaxalyasz of soi technologies for scanning probe microscopy and atomic force probing characterization Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece ... 11/30/06 - 20060270233 - Vapor deposition of benzotriazole (bta) for protecting copper interconnects A method of protecting an interconnect is provided. The method includes forming an integrated circuit structure having an interconnect, and depositing vaporized benzotriazole on the interconnect. ... 11/30/06 - 20060270232 - Manufacturing method of printed wiring board as well as copper-clad laminate and treatment solutions used therefor There is provided a method for removing molten and scattered Cu and overhang that are generated around a via opening during laser machining in a direct laser via forming method of directly machining an outer-layer copper foil. In a manufacturing method of a printed wiring board of machining the via ... 11/30/06 - 20060270231 - Systems and methods for removing wafer edge residue and debris using a residue remover mechanism A system (500) removes wafer edge residue from a target wafer (508). A wafer holding mechanism (502) holds and rotates the target wafer (508). A residue remover mechanism (504) mechanically interacts or abrades an edge surface of the target wafer (508) and removes strongly adhered residue from the edge surface ... 11/23/06 - 20060264051 - Method for formng impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), ... 10/19/06 - 20060234507 - Treatment of semiconductor wafers A method is described for treating a wafer having at least a surface layer of semiconductor material, with the surface of this surface layer having undergone a chemical-mechanical polishing step followed by an RCA cleaning step. After the polishing step and prior to the RCA cleaning step, the method includes ... 09/21/06 - 20060211249 - Pattern transfer method and exposure system Multilevel pattern registration is achieved by modifying the shape of an exposure pattern according to deviation of the shape of a microlithographically defined pattern due to distortion produced on a substrate. A substrate to be exposed is pretreated in a given manner. The substrate is photographed to obtain image data ... 08/03/06 - 20060172539 - Method of treating a structured surface The invention provides a simple method of treating a structured surface comprising a higher surface in a first region and a lower surface in the second region. A plurality of layers is deposited on said surface wherein a lower layer exhibits a higher polishing rate than an upper layer and ... 07/06/06 - 20060148258 - Method of planarizing an inter-metal insulation film A method for forming a planarized inter-metal insulation film is provided. The method includes applying a CMP process to an insulation film as controlled by a polish-stop layer pattern formed on an underlying metal wiring pattern. A PAE based material may be used to form the polish-stop layer. ... 06/15/06 - 20060128152 - Plasma oxidation and removal of oxidized material A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about ... 06/01/06 - 20060115986 - Edge removal of silicon-on-insulator transfer wafer A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant ... 05/11/06 - 20060099812 - Semiconductor device and method of fabricating a semiconductor device A method is proposed for the fabrication of the gate electrode of a semiconductor device such that the effects of gate depletion are minimized. The method is comprised of a dual deposition process wherein the first step is a very thin layer that is doped very heavily by ion implantation. ... 03/16/06 - 20060057850 - Method of manufacturing carrier wafer and resulting carrier wafer structures A method is disclosed for preparing carrier wafers for semiconductor device manufacture. The method includes the steps of sorting a plurality of standard carrier wafer blanks into batches by thickness to define a batch of starting carrier wafers that are within a predetermined tolerance of one another, reducing the thickness ... 02/16/06 - 20060035464 - Method of planarizing a semiconductor substrate The present invention provides a method of planarizing a substrate, the method including, forming, on the substrate, a patterned layer having a first shape associated therewith; and processing the patterned layer, with the first shape compensating for variations in the processing such that upon processing the patterned layer, the patterned ... 02/09/06 - 20060030154 - Polishing inhibiting layer forming additive, slurry and cmp method A polishing inhibiting layer forming additive for a slurry, the slurry so formed, and a method of chemical mechanical polishing are disclosed. The polishing inhibiting layer is formed through application of the slurry to the surface being polished and is removable at a critical polishing pressure. The polishing inhibiting layer ... 01/05/06 - 20060003586 - Nonselective unpatterned etchback to expose buried patterned features A method for etching to form a planarized surface is disclosed. Spaced-apart features are formed of a first material, the first material either conductive or insulating. A second material is deposited over and between the first material. The second material is either insulating or conductive, opposite the conductivity of the ... 12/08/05 - 20050272264 - Coupling for corrugated cable conduits for enclosing cables A coupling is provided for corrugated conduits. The coupling is formed unitarily from a resin material and has first and second coupling halves that are joined unitarily along a living hinged. The halves can be rotated about the living hinge from an open position to a closed position. Ends of ... 11/24/05 - 20050260855 - Method and apparatus for planarizing a semiconductor wafer A method for planarizing a semiconductor wafer includes providing a fluid on a surface of the wafer, the fluid containing particles, and generating a field to apply a force to the particles, the force having a component that is normal to the surface such that the particles contact the surface ... 11/03/05 - 20050245086 - Adaptive electropolishing using thickness measurement and removal of barrier and sacrificial layers A metal layer formed on a semiconductor wafer is adaptively electropolished. A portion of the metal layer is electropolished, where portions of the metal layer are electropolished separately. Before electropolishing the portion, a thickness measurement of the portion of the metal layer to be electropolished is determined. The amount that ... 09/29/05 - 20050215059 - Process for producing semi-conductor coated substrate A process of producing a clean substrate for use in semi-conductor processing in which the substrate is roughened to produce microfissures therein and then treated with a high concentration of a strong acid followed by coating with a material containing at least one metal oxide. ... 07/21/05 - 20050159003 - Chemical mechanical polishing compositions and methods relating thereto A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate ... 07/14/05 - 20050153554 - Integrated polishing and electroless deposition The invention provides a method of modifying a substrate comprising the steps of providing a substrate comprising a base and a first metal, chemically-mechanically polishing the substrate, depositing a second metal onto the substrate, and polishing the substrate again to remove any metal overburden for a planarized surface with minimum ... 07/07/05 - 20050148182 - Compositions for planarization of metal-containing surfaces using halogens and halide salts A planarization method includes providing a metal-containing surface (preferably, a Group VIII metal-containing surface, and more preferably a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes a halogen and a halide salt. ... 06/30/05 - 20050142881 - Mask and method of using the same A mask applied in the process of miniaturizing a structural device is disclosed. The mask comprises a plurality of layout pattern areas for defining layers of the structural device, wherein at least one layout pattern area is arranged on the mask in a regular rule. A method for exposure is ... 06/23/05 - 20050136669 - Slurry for color photoresist planarization The present invention relates to a chemical mechanical abrasive slurry for polishing a color photoresist, comprising composite abrasive particles and an aqueous medium. The abrasive slurry of the present invention can effectively polish off horn-like protuberances color filter processing. ... 06/16/05 - 20050130429 - Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step. ... 06/16/05 - 20050130428 - Slurry compositions and cmp methods using the same The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order ... 06/02/05 - 20050118820 - Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to ... ### FreshPatents.com Support |