REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Coating With Electrically Or Thermally Conductive Material > To Form Ohmic Contact To Semiconductive Material > Plural Layered Electrode Or Conductor > At Least One Layer Forms A Diffusion Barrier At Least One Layer Forms A Diffusion BarrierAt Least One Layer Forms A Diffusion Barrier patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/08/07 - 20070032072 - Nucleation layer deposition on semiconductor process equipment parts A plasma chamber is provided having an upper insulating member as a lid of the plasma chamber. The lid of the plasma chamber, usually in the form of a bell jar, has an inside surface which will be exposed to the interior of the plasma chamber. A nucleation layer is ... 12/28/06 - 20060292864 - Plasma-enhanced cyclic layer deposition process for barrier layers In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical vapor deposition process, exposing the substrate to a soak process, and depositing a conductive material on the substrate by a ... 11/30/06 - 20060270217 - Integration process for fabricating stressed transistor structure A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP of a nitride spacer and polysilicon gate, and subsequent deposition of a high stress etch stop layer, enhance strain and improve ... 10/26/06 - 20060240665 - Methods of producing integrated circuit devices utilizing tantalum amine derivatives In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal ... 09/21/06 - 20060211241 - Protective layer for barrier coating for silicon-containing substrate and process for preparing same An article comprising a silicon-containing substrate, a steam-resistant barrier coating overlaying the substrate, wherein the steam-resistant barrier coating comprises an outer barrier layer consisting essentially of an alkaline earth aluminate/aluminosilicate, and a corrosion resistant metal silicate protective layer overlaying and adjacent to the outer barrier layer. A process is also ... 08/24/06 - 20060189130 - Method of forming metal line in semiconductor device A method of forming a line a semiconductor device, including the steps of forming an interlayer insulating film on a semiconductor substrate in which predetermined structures are formed, forming a trench through which a predetermined region of the semiconductor substrate is exposed in the interlayer insulating film, sequentially forming a ... 08/17/06 - 20060183321 - Method for reduction of gap fill defects A method of electrodepositing a conductor to form a defect-free conductor layer on a wafer surface including features. The wafer surface including the features is lined with a nucleation film. The conductor is electrodeposited onto the nucleation layer from a process solution having an additive that adsorbs strongly on the ... 06/29/06 - 20060141779 - Method for forming an aluminum contact A method of forming an aluminum contact including forming a barrier metal layer on an interlayer insulation layer pattern defining a contact hole, and forming an aluminum layer on the barrier metal layer so as to fill the contact hole. The method further includes forming a photoresist pattern for ion ... 05/25/06 - 20060110917 - Method of metallization in the fabrication of integrated circuit devices The method of metallization in the fabrication of an integrated circuit device comprises the steps as follows. First, a dielectric layer overlying a semiconductor substrate is provided. The dielectric layer has a top surface and a plurality of openings. Next, a metal layer is formed on the dielectric layer and ... 05/04/06 - 20060094237 - Methods to completely eliminate or significantly reduce defects in copper metallization in ic manufacturing A method for the improved electroplating of copper on to a copper seed layer provides treating the surface of a copper seed layer with nitrogen or another anaerobic gas. In another aspect, a burnishing treatment is used to enhance the platability of the copper seed layer. According to another aspect, ... 03/02/06 - 20060046472 - Barrier layer, ic via, and ic line forming methods A barrier layer forming method includes providing a porous dielectric layer over a substrate, the dielectric layer having a surface with exposed pores, and treating the dielectric layer with a plasma formed from a methane-containing gas. The treating seals the exposed pores. The method includes depositing a barrier layer over ... 02/09/06 - 20060030148 - Formation of a tantalum-nitride layer A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration ... 12/15/05 - 20050277291 - Method of manufacturing electronic device A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so ... 12/01/05 - 20050266684 - Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers, and apparatus for fabricating the same A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on the exposed ... 11/10/05 - 20050250317 - Semiconductor device and method of fabricating the same A semiconductor device includes (a) a semiconductor layer formed on an electrically insulating layer, (b) a gate insulating film formed on the semiconductor layer, (c) a gate electrode formed on the gate insulating film, and (d) a field insulating film formed on the semiconductor layer for defining a region in ... 09/22/05 - 20050208763 - Method and apparatus for depositing tungsten after surface treatment to improve film characteristics A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of ... 08/25/05 - 20050186787 - Semiconductor devices and methods to form a contact in a semiconductor device Semiconductor devices and methods to form a contact of a semiconductor device are disclosed. An example method to form a contact includes forming an insulating layer on a substrate; etching the insulating layer to form a contact hole; depositing a silicon layer on sidewalls and an undersurface of the contact ... 06/30/05 - 20050142866 - Method for forming aluminum interconnect A method for forming an Al interconnect is disclosed. A disclosed method comprises: depositing a Ti layer on a substrate having predetermined devices; depositing a TiN layer on the entire surface of the Ti layer by performing a CVD process; performing a plasma treatment for the TiN layer; depositing an ... ### FreshPatents.com Support |