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Semiconductor Device Manufacturing: Process > Coating With Electrically Or Thermally Conductive Material > Insulated Gate Formation > Gate Insulator Structure Constructed Of Plural Layers Or Nonsilicon Containing Compound Gate Insulator Structure Constructed Of Plural Layers Or Nonsilicon Containing CompoundGate Insulator Structure Constructed Of Plural Layers Or Nonsilicon Containing Compound patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/15/07 - 20070059910 - Semiconductor structure and method for manufacturing the same A semiconductor structure and method for manufacturing the same is disclosed. The present invention relates to a semiconductor having a dielectric layer applied on a gate of a transistor, and a high dielectric-coefficient, and a manufacturing method of the semiconductor. Ti is formed on HfO2 to absorb oxygen from the ... 03/01/07 - 20070048989 - Atomic layer deposition of gdsco3 films as gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of gadolinium oxide (Gd2O3) and scandium oxide (Sc2O3) acting as a single dielectric layer with a formula of GdScO3, and a method of fabricating such a dielectric layer, is described that produces a reliable structure with a high ... 12/28/06 - 20060292844 - Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first ambient comprises an inert ambient with a first partial ... 11/02/06 - 20060246698 - Process to make high-k transistor dielectrics A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce ... 09/14/06 - 20060205198 - Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the ... 08/31/06 - 20060194423 - Method of making a nitrided gate dielectric A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors that are ultimately formed. ... 07/27/06 - 20060166476 - Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference ... 06/01/06 - 20060115971 - Nano- and micro-scale structures: methods, devices and applications thereof Disclosed are methods for fabricating integrated nano-scale and micro-scale structures. Also disclosed are carbon nanopipettes, shovels, and sheets made by these methods. Nano-scale and micro-scale structures fabricated by the disclosed methods are useful in a variety of application, for example, nanoelectrodes, functionalized probes for chemical and biological sensing, nanopipettes for ... 04/13/06 - 20060079077 - Semiconductor device manufacturing method A manufacturing method for semiconductor devices having MOSFET gate insulation films. The method includes forming a silicon oxide film, forming a silicon nitride film, nitriding the silicon nitride film, and heat treatment. ... 02/23/06 - 20060040483 - Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a ... 09/08/05 - 20050196948 - Method for forming a semiconductor device A method for forming a semiconductor device by self-aligned is provided. The present method provides a substrate and a multilayer structure formed on the substrate. A patterned first layer is formed on the multilayer structure, and a second layer is then formed on the patterned first layer and the multilayer ... 07/28/05 - 20050164479 - Zirconium oxide and hafnium oxide etching using halogen containing chemicals A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing ... 07/21/05 - 20050158973 - Low-temperature grown high quality ultra-thin cotio3 gate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a ... 06/23/05 - 20050136632 - Implementation of split gate transistor technology with high-k gate dielectrics Methods and systems are disclosed that facilitate semiconductor fabrication by fabricating transistor devices having gate dielectrics with selectable thicknesses in different regions of semiconductor devices. The thicknesses correspond to operating voltages of the corresponding transistor devices. Furthermore, the present invention also provides systems and methods that can fabricate the gate ... ### FreshPatents.com Support |