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Semiconductor Device Manufacturing: Process > Coating With Electrically Or Thermally Conductive Material Coating With Electrically Or Thermally Conductive MaterialCoating With Electrically Or Thermally Conductive Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082469 - Forming heaters for phase change memories Rather than depositing a heater material into a pore, a heater material may be first blanket deposited. The heater material may then be covered by a mask, such that the mask and the heater material may be etched to form a stack. Then, the region between adjacent stacks that form ... 04/12/07 - 20070082468 - Atomic layer deposition methods An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. The first monolayer comprises metal and halogen of the metal halide. While flowing ... 03/29/07 - 20070072401 - Method for purifying a metal carbonyl precursor A method of purifying a metal carbonyl precursor in a metal precursor vaporization system where the metal carbonyl precursor comprises a metal particulate impurity. The method includes flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization ... 02/15/07 - 20070037370 - Method and apparatus for high-efficiency synthesis of carbon nanostructure, and carbon nanostructure A high-efficiency synthesis method of carbon nanostructure according to the present invention is a high-efficiency synthesis method of carbon nanostructure, the method comprising: bringing raw material gas and a catalyst into contact with each other under reactive conditions so as to produce a carbon nanostructure, wherein: the initiation of contact ... 02/08/07 - 20070032055 - Dry etchback of interconnect contacts A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The ... 01/25/07 - 20070020899 - Forming method for film pattern, device, electro-optical apparatus, electronic apparatus, and manufacturing method for active matrix substrate A forming method for a film pattern, includes: forming a first bank layer on a substrate; forming a second bank layer on the first bank layer; patterning the first bank layer and the second bank layer thereby forming a bank having a pattern formation region including a first pattern formation ... 01/18/07 - 20070015350 - Methods of manufacturing carbon nanotubes An optical antenna collects, modifies and emits energy at light wavelengths. Linear conductors sized to correspond to the light wavelengths are used. Nonlinear junctions of small dimension are used to rectify an alternating waveform induced upon the conductors by the lightwave electromagnetic energy. The optical antenna and junctions are effective ... 01/11/07 - 20070010078 - Methods of forming integrated circuitry and methods of forming local interconnects In one implementation, field oxide is grown within bulk semiconductive material in a first circuitry area and not over immediately adjacent bulk semiconductive material in a second circuitry area. The field oxide is etched from the first circuitry area. After the etching, a circuit component is formed in the first ... 01/04/07 - 20070004186 - Film forming method A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase ... 12/28/06 - 20060292841 - Atomic layer deposition systems and methods including metal beta-diketiminate compounds The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. ... 12/28/06 - 20060292840 - Thermally conductive grease and methods and devices in which said grease is used A thermally conductive grease includes (A) a polyorganosiloxane having a viscosity less than 50 cSt (mm2/s) at 25° C. and (B) a thermally conductive filler. The thermally conductive grease is useful as a thermal interface material for electronic devices. ... 12/21/06 - 20060286785 - A stretchable form of single crystal silicon for high performance electronics on rubber substrates The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant ... 12/14/06 - 20060281286 - Method for fabricating metal line in semiconductor device A method for fabricating a metal line in a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a contact hole by etching the inter-layer insulation layer; forming a metal layer on the inter-layer insulation layer and the contact hole; etching a portion ... 11/09/06 - 20060252240 - Process for forming a dielectric on a copper-containing metallization and capacitor arrangement Process for forming a dielectric. The process may include forming the dielectric on a metallization and capacitor arrangement. The process allows the direct application of a dielectric layer to a copper-containing metallization. Accordingly, two process gases may be excited with different plasma powers per unit substrate area, or one process ... 11/02/06 - 20060246696 - Method of forming a chalcogenide material containing device Embodiments of the invention provide a method of forming a chalcogenide material containing device, and particularly resistance variable memory elements. A stack of one or more layers is formed over a substrate. The stack includes a layer of chalcogenide material and a metal, e.g., silver, containing layer. A protective layer ... 11/02/06 - 20060246695 - Flip chip method A flip chip method using gold bumps and inkjet printing is disclosed. The flip chip method, comprising: forming gold bumps on a semiconductor chip, printing solder ink on a first pad of a substrate using inkjet printing, mounting the semiconductor chip on the substrate so that the gold bump and ... 08/24/06 - 20060189108 - Suppressing formation of metal silicides on semiconductor surfaces The present invention provides for compositions and methods of modifying a semiconductor structure, the structure including a semiconductor material, silicon, or germanium. The methods include modifying at the atomic scale at least one surface of the structure and forming a low-reactivity surface, contacting the at least one surface with at ... 08/10/06 - 20060177997 - Methods of forming semiconductor devices with high-k gate dielectric A method of fabricating an integrated circuit is provided. A first gate dielectric portion is formed on a substrate in a first transistor region. The first gate dielectric portion includes a first high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. A second gate ... 08/03/06 - 20060172517 - Method for plasma-enhanced physical vapor deposition of copper with rf source power applied to the target A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into ... 07/27/06 - 20060166474 - Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt ... 07/20/06 - 20060160340 - Method and apparatus for processing a conductive thin film A method and apparatus for processing a thin film able to easily form grooves in a conductive thin film on an insulating substrate, comprising bringing a first electrode into contact with the conductive thin film, maintaining a conductive state between a tip of a second electrode with a voltage applied ... 06/22/06 - 20060134897 - Ethyleneoxide-silane and bridged silane precursors for forming low k films wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals. ... 06/22/06 - 20060134896 - Process for manufacturing liquid ejection head A process includes forming a protective layer in a region of a substrate including a PAD electrode; forming a soluble resin layer in a region including a region on the substrate where an energy generating element has been formed, for forming a liquid chamber; forming a coating resin layer in ... 06/15/06 - 20060128129 - Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less ... 06/15/06 - 20060128128 - Method for producing a conductive layer In a method for producing a conductive layer a substrate is provided. On the substrate, a layer comprised of at least two different metal nitrides is provided. Especially, on a surface of the substrate a first metal nitride layer, on a surface of the first metal nitride layer a second ... 06/15/06 - 20060128127 - Method of depositing a metal compound layer and apparatus for depositing a metal compound layer In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the ... 06/08/06 - 20060121710 - Thermal conducting trench in a semiconductor structure The invention relates to a trench filled with a thermally conducting material in a semiconductor substrate. In one embodiment, the semiconductor device has a trench defining a cell region, wherein a portion of the trench includes a thermally conducting material, and a contact to the thermally conducting material. The invention ... 06/08/06 - 20060121709 - Fluorine-free metallic complexes for gas-phase chemical metal deposition The invention concerns novel copper or silver complexes and their use for gas-phase chemical deposition of metal copper or silver almost free of impurities. ... 06/01/06 - 20060115970 - Compositions and processes for photoresist stripping and residue removal in wafer level packaging Improved compositions and processes for removing photoresists, polymers, post etch residues, and post oxygen ashing residues from interconnect, wafer level packaging, and printed circuit board substrates are disclosed. One process comprises contacting such substrates with mixtures containing an effective amount of organic ammonium compound(s); from about 2 to about 20 ... 05/25/06 - 20060110899 - Methods for fabricating a germanium on insulator wafer Improved fabrication processes for manufacturing GeOI type wafers are disclosed. In an implementation, a method for fabricating a germanium on insulator wafer includes providing a source substrate having a surface, at least a layer of germanium and a weakened area. The weakened area is located at a predetermined depth in ... 05/25/06 - 20060110898 - Circuitized substrates utilizing smooth-sided conductive layers as part thereof, method of making same, and electrical assemblies and information handling systems utilizing same A circuitized substrate in which two conductive layers (e.g., electroplated copper foil) are bonded (e.g., laminated) to an interim dielectric layer. Each of the two foil surfaces which physically bond to the dielectric are smooth (e.g., preferably by chemical processing) and include a thin, organic layer thereon, while the outer ... 05/18/06 - 20060105556 - Semiconductor device and method of manufacturing the same The annealing process at 400° C. or more required for the wiring process for a phase change memory has posed the problem in that the crystal grains in a chalcogenide material grow in an oblique direction to cause voids in a storage layer. The voids, in turn, cause peeling due ... 05/18/06 - 20060105555 - Display apparatus and control method thereof A gantry apparatus includes a pair of first guides disposed parallely each other, a pair of sliders respectively coupled to the pair of first guides to move together with the first guides; a second guide coupled to the pair of sliders to move along the sliders; a head coupled to ... 04/20/06 - 20060084254 - Method for making electronic packages A process for fabricating an electronic package for a Thermally Enhanced BGA package including the steps of fabricating a thermally conductive support member, an adhesive bonding member, and a circuitized member; sandwiching the members together, forming a cavity therein; bonding adhesively the members together with heat and pressure; bonding adhesively ... 04/20/06 - 20060084253 - Plating method, semiconductor device fabrication method and circuit board fabrication method The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and ... 04/20/06 - 20060084252 - Method for fabricating a gold contact on a microswith Described is a process to pattern adhesion and top contact layers in such a way that at least some portion of the top contact layers overlaps the adhesion layer, while another portion of the top contact layer overlaps with the bottom contacts, but does not overlap with the adhesion layer. ... 04/20/06 - 20060084251 - Plating method, semiconductor device fabrication method and circuit board fabrication method The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 so that the ten-point height of irregularities of the surface of the resin layer 10 is 0.5-5 μm; the step of forming ... 04/06/06 - 20060073687 - Method for maskless fabrication of self-aligned structures comprising a metal oxide The present invention describes a method for fabricating micro-devices comprising aluminumoxide structures without the need for an extra lithographical processing step. So, no extra mask is needed. It appears that under certain circumstances, aluminumoxide walls arise in the etching process, just above sloped walls of underlying metal structures. The fact ... 03/30/06 - 20060068574 - Post passivation interconnection schemes on top of the ic chips A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick ... 03/30/06 - 20060068573 - Multilayer structure forming method, method of manufacturing wiring board, and method manufacturing of electronic apparatus A droplet discharge apparatus is used in a multilayer structure forming method of the invention. The multilayer structure forming method includes: discharging droplets of a first conductive material to form a first conductive material pattern on a surface of an object; baking the first conductive material pattern to form a ... 03/23/06 - 20060063363 - Semiconductor structures In one aspect, the invention includes a method of forming a roughened layer of platinum, comprising: a) providing a substrate within a reaction chamber; b) flowing an oxidizing gas into the reaction chamber; c) flowing a platinum precursor into the reaction chamber and depositing platinum from the platinum precursor over ... 03/16/06 - 20060057827 - Method for manufacturing in electrically conductive pattern The present invention relates to a method for manufacturing an electrically conductive pattern by printing a layer comprising metal oxide on a carrier substrate (2) and reducing the metal oxide to metal. The reduced layer is transferred to an application substrate (7). The present invention also relates to the use ... 03/02/06 - 20060046447 - Method for coating semiconductor surface, process for production of semiconductor particles using said method, and optical element using said semiconductor particles The present invention provides a method for coating a group 4 semiconductor surface composed mainly of a group 4 semiconductor elements and a process for producing group 4 semiconductor particles having a luminescent capability and semiconductor particles and a semiconductor element produced thereby. The method for coating a semiconductor surface ... 02/23/06 - 20060040480 - Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition ... 02/09/06 - 20060030135 - Method for fabricating hafnia films The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable ... 01/05/06 - 20060003564 - Wiring method A method of forming a wiring in a thin-film transistor includes a step of providing a bank having a groove defined thereon, a step of placing a liquid material in a wiring formation area of the by depositing droplets of the liquid material, and a step of placing the liquid ... 12/22/05 - 20050282369 - Enhanced step coverage of thin films on patterned substrates by oblique angle pvd A method and an apparatus for fabricating an integrated circuit entail directing a vapor flux toward a substrate surface from a plurality of directions associated with a plurality of azimuth angles, and selecting a deposition angle of the vapor flux, relative to a normal incidence, to obtain a substantially conformal ... 11/24/05 - 20050260839 - Non-volatile resistance switching memory Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the ... 10/20/05 - 20050233561 - Adhesion of a metal layer to a substrate and related structures Methods and resulting structures are described in which a metal layer is adhered to a surface of a substrate. The methods involve applying a sacrificial acidic organic layer to the surface of the substrate prior to depositing the metal layer onto the substrate. During deposition of the metal layer, the ... 10/20/05 - 20050233560 - Silicon substrates with multi-grooved surface and production methods thereof Methods for producing silicon substrates that have a silicon surface layer with a high voidage are provided. These methods do not involve the use of hydrogen fluoride, and the silicon surface of these substrates has a voidage high enough to be regarded as defining a quantum wire. The methods for ... 10/20/05 - 20050233559 - Method of forming a layer on a wafer A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the ... 10/13/05 - 20050227467 - Semiconductor device and method of manufacture thereof In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film ... 10/06/05 - 20050221594 - Isfet with tio2 sensing film A method of manufacturing a titanium dioxide (TiO2) thin film, used as the sensing film of the ISFET, prepared on the gate oxide by sputtering deposition. It also utilizes current/voltage measuring system to measure the current-voltage curves for the different pH values and temperatures. From the relationship of the current-voltage ... 09/22/05 - 20050208741 - Methods for forming rough ruthenium-containing layers and structures/methods using same A method for forming a rough ruthenium-containing layer on the surface of a substrate assembly includes providing a ruthenium-containing precursor into the reaction chamber. A rough ruthenium layer may be deposited on the surface of the substrate assembly at a rate of about 100 Å/minute to about 500 Å/minute using ... 08/25/05 - 20050186767 - Semiconductor device, apparatus and method for manufacturing the same An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and ... 08/04/05 - 20050170622 - Method for manufacturing wiring substrate and method for manufacturing electronic device A method for manufacturing a wiring substrate includes the steps of (a) irradiating a vacuum ultraviolet radiation on a second area of a substrate having a first area and the second area to thereby break down an interatomic bond in the second area of the substrate, (b) providing a catalyst ... 08/04/05 - 20050170621 - Methods of fabricating devices by transfer of organic material The invention provides a method of depositing a layer of a conductive material, e.g. metal, metal oxide or electroconductive polymer, from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate after an organic layer has been transferred from a patterned stamp to an organic layer over the substrate. ... 06/16/05 - 20050130397 - Formation of layers on substrates Disclosed is a method of forming, on the surface of a substrate, a first layer which is suitable for activating a second solid-layer-forming chemical reaction thereon, the method comprising the steps of bringing into contact with the substrate a first liquid which forms a first solid layer thereon, the first ... 06/02/05 - 20050118794 - Remote plasma deposition of thin films The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a ... ### FreshPatents.com Support - Terms & Conditions |