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Semiconductor Device Manufacturing: Process > Forming Schottky Junction (i.e., Semiconductor-conductor Rectifying Junction Contact) Forming Schottky Junction (i.e., Semiconductor-conductor Rectifying Junction Contact)Forming Schottky Junction (i.e., Semiconductor-conductor Rectifying Junction Contact) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/15/07 - 20070037369 - Method of manufacturing silicon carbide semiconductor device A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then the oxide film on regions in which ... 01/18/07 - 20070015348 - Crosspoint resistor memory device with back-to-back schottky diodes A metal/semiconductor/metal (MSM) back-to-back Schottky diode, a resistance memory device using the MSM diode, and associated fabrication processes are provided. The method includes: providing a substrate; forming a metal bottom electrode overlying the substrate, having a first work function; forming a semiconductor layer overlying the metal bottom electrode, having a ... 12/28/06 - 20060292839 - Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof Provided are a contact fabric using a heterostructure of metal/semiconductor nanorods and a method of manufacturing the same. An ohmic contact fabric having a low contact resistance or a Schottky contact fabric having a rectification characteristic is formed by selectively depositing metal of nano-sizes onto predetermined portions of zinc oxide/semiconductor ... 12/14/06 - 20060281285 - Semiconductor device and a method of manufacturing the same A semiconductor device has a semiconductor (e.g., a silicon substrate), an electrically conductive region (e.g., a source region and a drain region) which is in contact with the semiconductor to form a Schottky junction, and an insulator. The insulator is in contact with the semiconductor and the electrically conductive region, ... 09/21/06 - 20060211227 - Schottky diode and method of manufacture A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A ... 09/14/06 - 20060205196 - Vertical unipolar component A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being at most equal to the thickness of the upper portion. ... 09/14/06 - 20060205195 - Method of forming an ohmic contact in wide band semiconductor A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms ... 08/24/06 - 20060189107 - Merged p-i-n schottky structure Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region. ... 08/17/06 - 20060183308 - Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gases additions A method for making dual pre-doped gate stacks used in semiconductor applications such as complementary metal oxide semiconductor (CMOS) devices and metal oxide semiconductor field effect transistors (MOSFETs) is provided. The method involves providing at least one pre-doped conductive layer, such as poly silicon (poly-Si), on a gate stack and ... 07/27/06 - 20060166473 - Method of forming schottky diode with charge balance structure a Schottky diode having a semiconductor region is formed as follows. A plurality of charge control electrodes are formed in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from ... 07/20/06 - 20060160339 - Soi contact structure(s) and corresponding production method Disclosed are an arrangement and a production method for electrically connecting active semiconductor structures in or on a monocrystalline silicon layer (12) located on the front face (V) of silicon-on-insulator semiconductor wafers (SOI, 10) to the substrate (13). The electrical connection (20) is made through an insulator layer (11). A ... 09/15/05 - 20050202661 - Non-activated guard ring for semiconductor devices A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be ... ### FreshPatents.com Support |