REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Introduction Of Conductivity Modifying Dopant Into Semiconductive Material > Diffusing A Dopant Diffusing A DopantDiffusing A Dopant patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/15/07 - 20070037368 - Method of fabricating a semiconductor device A method of fabricating a semiconductor device includes a processing step of high-energy ion implantation. After performing the high-energy ion implantation process and before beginning a thermal process, a buffer layer is partially removed together with particles or contaminants that may be generated from the ion implantation process. Surface defects ... 12/07/06 - 20060276015 - Method and apparatus for reducing dielectric charging in mems structures A Micro-Electro-Mechanical system (MEMS) device includes a doped semiconductor layer that is disposed outwardly from a substrate. The MEMS device further includes an insulation layer that is disposed outwardly from and in contact with the doped semiconductor layer. The MEMS device also includes a conductive membrane that is disposed outwardly ... 11/23/06 - 20060264016 - Active mask lithography An active mask emits a patterned energy flux in response to an energy input. ... 11/23/06 - 20060264015 - Electroactive polymers for lithography Systems and methods for lithography include actuating an electroactive polymer member to position mask and/or substrate. ... 09/14/06 - 20060205194 - Methods of depositing electrically active doped crystalline si-containing films Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an ... 08/31/06 - 20060194422 - Abrupt delta-like doping in si and sige films by uhv-cvd A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 ... 05/11/06 - 20060099782 - Method for forming an interface between germanium and other materials Interfaces that are portions of semiconductor structures used in integrated circuits and optoelectronic devices are described. In one instance, the semiconductor structure has an interface including a semiconductor surface, an interfacial layer including sulfur, and an electrically active layer (e.g., a dielectric or a metal). Such an interface can inhibit ... 05/04/06 - 20060094214 - Semiconductor doping process A semiconductor doping process uses hydrogen in a diffusion furnace to prevent platinum/gold atoms from gathering around a defect area of the semiconductor wafer. Platinum/gold atom aggregation caused by a micro defect in the semiconductor wafer is prevented in order to stabilize the semiconductor doping process and to improve reverse ... 02/02/06 - 20060024933 - Semiconductor processing methods of forming integrated circuitry and semiconductor processing methods of forming dynamic random access memory (dram) circuitry Semiconductor processing methods of forming integrated circuitry, and in particular, dynamic random access memory (DRAM) circuitry are described. In one embodiment, a single masking step is utilized to form mask openings over a substrate, and both impurities are provided and material of the substrate is etched through the openings. In ... 12/29/05 - 20050287778 - Method for forming an ultra-shallow junction in a semiconductor substrate using a nuclear stopping layer A method for forming an ultra-shallow junction in a semiconductor substrate is provided. A semiconductor substrate having a top surface is prepared. A dielectric layer is then formed on the top surface. A first ion implantation process is carried out to implant a plurality of heavy ions into the dielectric ... 10/20/05 - 20050233558 - Semiconductor device and manufacturing method thereof The depletion of a gate electrode (103) is suppressed in such a way that impurities are introduced into the gate electrode that is formed on a semiconductor substrate (101), with a gate insulating film (102) interposed between the gate electrode (103) and the semiconductor substrate (101), and that, by irradiating ... 10/13/05 - 20050227464 - Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells In a preferred embodiment, an indium gallium phosphide (InGaP) nucleation layer is disposed between the germanium (Ge) substrate and the overlying dual-junction epilayers for controlling the diffusion depth of the n-doping in the germanium junction. Specifically, by acting as a diffusion barrier to arsenic (As) contained in the overlying epilayers ... 08/25/05 - 20050186766 - Method for modifying the impedance of semiconductor devices using a focused heating source A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing ... ### FreshPatents.com Support |