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Semiconductor Device Manufacturing: Process > Introduction Of Conductivity Modifying Dopant Into Semiconductive Material > Plasma (e.g., Glow Discharge, Etc.) Plasma (e.g., Glow Discharge, Etc.)Plasma (e.g., Glow Discharge, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077737 - Plasma processing method and plasma processing apparatus A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form ... 02/08/07 - 20070032054 - Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer ... 01/25/07 - 20070020896 - Semiconductor device and method for fabricating the same A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than ... 11/23/06 - 20060264012 - Plasma processing, deposition, and ald methods A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method includes exposing at least some of the surface to both of ... 10/26/06 - 20060240649 - Method for depositing silicon The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma ... 09/14/06 - 20060205193 - Method for forming sic-based film and method for fabricating semiconductor device The method for forming an SiC-based film comprises the step of generating NH3 plasma on the surface of a substrate 20 in a chamber to make NH3 plasma processing on the substrate 20, the step of removing reaction products containing nitrogen remaining in the chamber, and the step of forming ... 09/14/06 - 20060205192 - Shallow-junction fabrication in semiconductor devices via plasma implantation and deposition A method for fabricating a semiconductor-based device includes disposing a substrate in a process chamber of a process tool, plasma implanting a dopant species from a plasma into a portion of the substrate in the process chamber, and plasma depositing a diffusion barrier on the implanted portion of the substrate ... 08/10/06 - 20060177996 - Doping method and method of manufacturing field effect transistor A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound in a first ... 04/27/06 - 20060088989 - Method of introducing impurity, device and element A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other ... 03/23/06 - 20060063361 - Plasma-assisted doping Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various doping processes. In one embodiment, a substrate (250) can be doped by forming a plasma (610) in a cavity (285) by subjecting a gas to an amount of electromagnetic radiation in the presence of a plasma ... 03/02/06 - 20060046445 - Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method In a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method, the method includes activating a surface of an electrode of the semiconductor device using surface pretreatment to create an activated surface of the electrode, forming an ... 12/22/05 - 20050282365 - Film formation apparatus and method for semiconductor process A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas ... 11/24/05 - 20050260837 - Methods for stable and repeatable ion implantation A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from the platen, and a pulse source ... 09/01/05 - 20050191827 - Plasma immersion ion implantation process One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma ... ### FreshPatents.com Support |