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Semiconductor Device Manufacturing: Process > Introduction Of Conductivity Modifying Dopant Into Semiconductive Material Introduction Of Conductivity Modifying Dopant Into Semiconductive MaterialIntroduction Of Conductivity Modifying Dopant Into Semiconductive Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077736 - Method of manufacturing semiconductor device carrying out ion implantation before silicide process An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of ... 03/15/07 - 20070059906 - Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate A semiconductor device includes a silicon substrate heavily-doped with phosphorous. A spacer layer is disposed over the substrate and is doped with dopant atoms having a diffusion coefficient in the spacer layer material that is less than the diffusion coefficient of phosphorous in silicon. An epitaxial layer is also disposed ... 03/08/07 - 20070054480 - Anti-halo compensation An apparatus and method for controlling the net doping in the active region of a semiconductor device in accordance with a gate length. The method includes doping a short channel device and a long channel device with a first dopant, and doping the short channel device and the long channel ... 03/01/07 - 20070048982 - Method of manufacturing semiconductor device and semiconductor device formed by the method The method of manufacturing a semiconductor device includes forming a p-type anode layer and an anode electrode on one major surface of an n-type semiconductor substrate, irradiating an electron beam to the semiconductor substrate to introduce crystal defects into the semiconductor substrate, grinding the other major surface of semiconductor substrate ... 03/01/07 - 20070048981 - Method for protecting a semiconductor device from carbon depletion based damage A method for protecting a semiconductor device from carbon depletion type damage includes enriching an exposed surface of a porous interlevel dielectric material (ILD) with a carbon based material, and implementing a plasma based operation on the porous ILD material. The enriching of the porous ILD material reduces effects of ... 02/15/07 - 20070037367 - Apparatus for plasma doping A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by ... 02/01/07 - 20070026649 - Plasma doping method and plasma doping apparatus In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and ... 01/25/07 - 20070020895 - Method for production of a very thin layer with thinning by means of induced self-support The invention relates to a process for obtaining a thin layer made of a first material on a substrate made of a second material called the final substrate, including the following steps: bonding a thick layer of a first material on one of its main faces on the final substrate ... 12/21/06 - 20060286783 - Post-ion implant cleaning for silicon on insulator substrate preparation A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, ... 11/30/06 - 20060270202 - Technique for reducing silicide non-uniformities by adapting a vertical dopant profile By modifying the vertical dopant concentration in deep drain and source regions, the reaction behavior during the formation of metal silicide regions may be controlled. For this purpose, an increased dopant concentration is formed around a target depth for the metal silicide interface, thereby reducing the reaction speeds and thus ... 11/16/06 - 20060258128 - Methods and apparatus for enabling multiple process steps on a single substrate Substrate masking apparatus includes a platen assembly to support a substrate for processing, a mask having an aperture, a retaining mechanism to retain the mask in a masking position, and a positioning mechanism to change the relative positions of the mask and the substrate so that different areas of the ... 10/05/06 - 20060223289 - Method of manufacturing semiconductor device and semiconductor device A method of manufacturing a semiconductor device includes implanting an impurity into a crystalline semiconductor film that is formed over a base and includes a first part in contact with the base, a second part and a third part, so that at least the second part and the third part ... 08/31/06 - 20060194421 - Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator cmos devices The present invention provides a method of integrating semiconductor devices such that different types of devices are formed upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. Specifically, the present invention provides a method of integrating semiconductor devices such that pFETs ... 07/06/06 - 20060148219 - Method for photomask processing A method for photomask processing including the formation of a photoresist pattern for a P-Well. The method further includes implanting ions for the P-well using the photoresist pattern as an ion implantation mask, coating another photoresist for the N-well that has a higher etch resistance than that of the photoresist ... 06/08/06 - 20060121705 - Devices and methods for integrated circuit manufacturing Integrated circuits and methods for producing them are provided. In particular, integrated circuits with shielding elements are provided. ... 06/08/06 - 20060121704 - Plasma ion implantation system with axial electrostatic confinement A plasma ion implantation system includes a process chamber, a source for generating a plasma in the process chamber, a platen for holding a substrate in the process chamber, an implant pulse source configured to generate implant pulses for accelerating ions from the plasma into the substrate, and an axial ... 06/01/06 - 20060115966 - Method and apparatus for the improvement of material/voltage contrast A method and system for registering a CAD layout to a Focused Ion Beam image for through-the substrate probing, without using an optical image and without requiring biasing, includes an improved method of trench endpointing during the FIB milling operation with a low beam energy. The method further includes removal ... 06/01/06 - 20060115965 - Ion implanted microscale and nanoscale device method A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing ... 04/27/06 - 20060088988 - Method for forming silicon-germanium in the upper portion of a silicon substrate A method for forming silicon-germanium in the upper portion of a silicon substrate, including the steps of: depositing a germanium layer doped at a concentration in dopant elements greater than 1019 atoms per cm3 on a silicon substrate; heating to have the germanium diffuse into the silicon substrate to form ... 04/20/06 - 20060084247 - Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation A process (200) for making integrated circuits with a gate, uses a doped precursor (124, 126N and/or 126P) on barrier material (118) on gate dielectric (116). The process (200) involves totally consuming (271) the doped precursor (124, 126N and/or 126P) thereby driving dopants (126N and/or 126P) from the doped precursor ... 04/06/06 - 20060073683 - Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The ... 03/23/06 - 20060063360 - Technique for boron implantation A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of ... 03/02/06 - 20060046444 - Method of forming a memory cell The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the processes can form the metal-rich metal chalcogenide without the use of photodoping techniques and without ... 02/23/06 - 20060040479 - Method of making semiconductor devices A method for fabricating semiconductor device is provided. A high stress layer formed on, under or on both sides of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress of the region is changed ... 02/23/06 - 20060040478 - Method of producing a calibration wafer A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical ... 01/05/06 - 20060003559 - Apparatus and method for controlling diffusion A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of dopant elements. Selection of a plurality of dopant elements includes selecting a first dopant element with a first atomic radius larger than a host ... 01/05/06 - 20060003558 - Method for fabricating semiconductor device and semiconductor device using the same A method for fabricating a semiconductor device improves off-state leakage current and junction capacitance characteristics in a pMOS transistor. The method includes forming a device isolation layer defining an active area in a semiconductor substrate; and forming a channel ion implantation layer by an implantation of arsenic ions in a ... 12/29/05 - 20050287777 - Semiconductor device and method of fabrication thereof A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step ... 12/29/05 - 20050287776 - Method of plasma doping A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized ... 12/08/05 - 20050272230 - Complementary analog bipolar transistors with trench-constrained isolation diffusion A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density ... 11/24/05 - 20050260836 - Method to overcome instability of ultra-shallow semiconductor junctions A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon ... 11/17/05 - 20050255680 - Sintered ceramic composite lead with superconductive nano-architecture A sintered ceramic composite lead has a super conductive nano-architecture including a physical-chemical phase composition consisting of nano-size superconductor ceramic grains composed of crystals and forming a base phase elements, additional phase elements, further phase elements and impurities, and a three dimensional grain-cell nano-structure comprising a network and consisting of ... 09/29/05 - 20050215035 - Field effect transistor with metal oxide gate insulator and sidewall insulating film Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, ... 06/16/05 - 20050130395 - Doping method and semiconductor device using the same The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron ... ### FreshPatents.com Support |