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Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > Fluid Growth From Gaseous State Combined With Subsequent Diverse Operation Fluid Growth From Gaseous State Combined With Subsequent Diverse OperationFluid Growth From Gaseous State Combined With Subsequent Diverse Operation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/08/07 - 20070032053 - Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in ... 09/14/06 - 20060205191 - Substrate processing method A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being ... 09/14/06 - 20060205190 - Semiconductor etching apparatus and method of etching semiconductor devices using same A semiconductor etching apparatus and a method for etching semiconductor devices using the apparatus. The semiconductor etching apparatus includes a chamber for accommodating a wafer, a radical source for supplying a radical into the chamber, a beam source for supplying ion beams or plasma into the chamber, a wafer stage ... 07/20/06 - 20060160337 - Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the same In a method of manufacturing a capacitor including a hemispherical grain (HSG) silicon layer, after forming a storage electrode electrically coupled to a contact region of a substrate, the HSG silicon layer is formed on the storage electrode by providing a first gas including silicon and a second gas onto ... 02/02/06 - 20060024926 - Method of forming a controlled and uniform lightly phosphorous doped silicon film Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The ... 08/11/05 - 20050176221 - Plasma cvd apparatus In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of ... ### FreshPatents.com Support |