REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > Fluid Growth From Gaseous State Combined With Preceding Diverse Operation Fluid Growth From Gaseous State Combined With Preceding Diverse OperationFluid Growth From Gaseous State Combined With Preceding Diverse Operation patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/22/07 - 20070042577 - Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followed by using a high power ... 11/16/06 - 20060258127 - Semiconductor device including container having epitaxial silicon therein Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided. ... 10/26/06 - 20060240648 - Atmospheric glow discharge with concurrent coating deposition A plasma is produced in a treatment space (58) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes (54,56) separated by a dielectric material (64), a precursor material is introduced into the treatment space to coat a substrate film ... 12/29/05 - 20050287775 - Film formation apparatus and method for semiconductor process A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. ... 07/07/05 - 20050148162 - Method of preventing surface roughening during hydrogen pre-bake of sige substrates using chlorine containing gases The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process ... ### FreshPatents.com Support |