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Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > Polycrystalline Semiconductor Polycrystalline SemiconductorPolycrystalline Semiconductor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/22/07 - 20070042575 - Crystallization apparatus and method of amophous silicon A plurality laser beams generated by a plurality of beam generators are synthesized by a beam synthesizer. The synthesized beam is splitted into a plurality of beamlets and provided for a plurality of optical units controlling the beamlets. Each beamlet controlled by each optical unit is illuminated onto an amorphous ... 01/11/07 - 20070010076 - Polycrystalline sige junctions for advanced devices A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused ... 12/28/06 - 20060292837 - Method and apparatus for modelling film grain patterns in the frequency domain Film grain patterns can be modeled in the frequency domain by estimating the cut frequencies that define a 2D band-pass filter. The film grain parameters can be conveyed in accordance with the ITU-T H.264|MPEG-4 AVC standard in an SEI message allowing film grain reinsertion at a decoder. ... 07/20/06 - 20060160336 - Silicon layer production method and solar cell production method A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn ... 04/27/06 - 20060088987 - Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The ... 01/26/06 - 20060019475 - Method of depositing polysilicon A method of depositing polysilicon includes positioning a substrate within a chemical vapor deposition reactor. The substrate has an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor to provide a reactive atmosphere under conditions effective ... 01/12/06 - 20060009017 - Method of crystallizing semiconductor film and method of manufacturing display device Conventional methods of crystallizing a semiconductor film through scanning with a pulse laser have had a problem in that variation in particle diameter or shape of a crystal grain causes variation in characteristics of a thin film transistor, which lowers display quality of a liquid crystal display. In view of ... 10/06/05 - 20050221593 - Selective growth method, and semiconductor light emitting device and fabrication method thereof At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the ... ### FreshPatents.com Support |