REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > Amorphous Semiconductor > And Subsequent Crystallization And Subsequent CrystallizationAnd Subsequent Crystallization patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/05/07 - 20070077735 - Element of low temperature poly-silicon thin film and method of making poly-silicon thin film by direct deposition at low temperature and inductively-coupled plasma chemical vapor deposition equipment therefor A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma ... 03/01/07 - 20070048978 - Mask for sequential lateral solidification (sls) process and a method thereof A mask for sequential lateral solidification (SLS) process with at least one transparency region is provided. The transparent region is defined by two lengthwise edges, a front edge, and a rear edge. The two lengthwise edges also define a quadrilateral. The front edge is located outside the quadrilateral, and the ... 02/08/07 - 20070032049 - Process for manufacturing a semiconductor device A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first ... 02/01/07 - 20070026647 - Method for forming polycrystalline silicon thin film A method for forming a polycrystalline silicon thin film, comprising steps of: providing a substrate; forming an amorphous silicon thin film on the substrate; and inducing a plurality of eddy currents to heat up the substrate such that the amorphous silicon thin-film is annealed to form the polycrystalline silicon thin ... 01/11/07 - 20070010075 - Semiconductor device and method for manufacturing same Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, ... 01/11/07 - 20070010074 - Method and system for facilitating bi-directional growth A method and system for processing at least one portion of a thin film sample on a substrate, with such portion of the film sample having a first boundary and a second boundary. One or more first areas of the film sample are successively irradiated by first beamlets of an ... 01/11/07 - 20070010073 - Method of forming a mos device having a strained channel region A method of forming a semiconductor device comprising providing a substrate comprising a first device region, implanting a source/drain region in the first device region, forming a strained capping layer on the source/drain region, super annealing and crystallizing the source/drain region, and removing substantially all of the strained capping layer ... 01/04/07 - 20070004185 - Methods of fabricating crystalline silicon film and thin film transistors A method by which solid phase crystallization (SPC) thermal budget for crystallizing an undoped (or a lightly doped) amorphous Si (a-Si) is significantly reduced. First, a composite layer structure consisting of an undoped (or a lightly doped) a-Si layer and a heavily doped (either p-type or n-type) a-Si layer is ... 12/07/06 - 20060276012 - Method of manufacturing a semiconductor device When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film contracts, so that a warp in the film occurs. Therefore, the quality of a resulting crystalline semiconductor film sometimes deteriorates. According ... 12/07/06 - 20060276011 - Amorphization/templated recrystallization method for hybrid orientation substrates The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first ... 08/17/06 - 20060183302 - Highly conductive shallow junction formation The invention relates to a method of forming a shallow junction. The method (100) comprises forming source/drain extension regions with a non-amorphizing tail implant (105) which is annealed conventionally (spike/RTP) and amorphizing implant which is re-grown epitaxially (SPER) (110). The non-amorphizing tail implant is generally annealed (106) before a doped ... 07/06/06 - 20060148218 - Method for manufacturing a semiconductor thin film A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film ... 07/06/06 - 20060148217 - Method of annealing polycrystalline silicon using solid-state laser and devices built thereon The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, ... 06/22/06 - 20060134894 - Method of manufacturing polycrystalline si film and manufacturing stacked transistor using the same A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, ... 05/11/06 - 20060099779 - Method for transferring a thin layer including a controlled disturbance of a crystalline structure The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The ... 02/09/06 - 20060030132 - Method for manufacturing a crystalline silicon layer A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed. ... 02/02/06 - 20060024925 - Crystalline semiconductor film, method of manufacturing the same, and semiconductor device A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount ... 01/26/06 - 20060019473 - Method of crystallizing amorphous si film A method of crystallizing an amorphous Si film is provided. The method of crystallizing an amorphous Si film may include doping the amorphous Si film formed on a substrate with predetermined metal ions, and annealing the amorphous Si film doped with the metal ions to crystallize the amorphous Si film. ... 01/26/06 - 20060019472 - Systems and methods for nanowire growth and harvesting The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality ... 01/26/06 - 20060019471 - Method for forming silicide nanowire Methods for forming a silicon-based material layer are disclosed along with silicon-based material layers formed by the method and devices incorporating the silicon-based material layer. The method includes forming an amorphous layer on a silicon-based substrate, doping at least a region of the amorphous layer with a metal ion, and ... 01/12/06 - 20060009015 - Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having ... 01/12/06 - 20060009014 - Method of fabricating a poly-crystalline silicon thin film and method of fabricating a semiconductor device using the same A method of fabricating a poly-crystalline silicon thin film, and a method of fabricating a semiconductor device using the same, includes implanting predominantly neutralized ions into an amorphous silicon thin film formed on a substrate. The thin film may be annealed. Glass, silicon and other substrates, such as heat intolerant ... 01/12/06 - 20060009013 - Method for manufacturing polysilicon layer and a tft using the same A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a ... 11/24/05 - 20050260834 - Method for forming a semiconductor A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a forming process of a non-crystalline silicon film by a ... 10/20/05 - 20050233557 - Semiconductor device and manufacturing method thereof In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions ... 10/20/05 - 20050233556 - Method for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The ... 10/13/05 - 20050227459 - Film formation method and apparatus for semiconductor process A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first ... 08/04/05 - 20050170618 - Manufacturing method of semiconductor film and image display device A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on ... 06/30/05 - 20050142818 - Method of manufacturing semiconductor device According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H2, O, O2, and P are added, are formed in a semiconductor film having ... 06/30/05 - 20050142817 - Surface planarization method of sequential lateral solidification crystallized poly-silicon thin film Provided is a method for planarizing a polysilicon surface grown by means of a sequential lateral solidification method, which comprises the steps of: crystallizing an amorphous silicon having a predetermined thickness formed on a substrate into the polysilicon layer by means of the sequential lateral solidification method; and planarizing the ... ### FreshPatents.com Support |