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Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > Amorphous Semiconductor > Deposition Utilizing Plasma (e.g., Glow Discharge, Etc.) Deposition Utilizing Plasma (e.g., Glow Discharge, Etc.)Deposition Utilizing Plasma (e.g., Glow Discharge, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/30/06 - 20060068570 - Structure with through hole, production method thereof, and liquid discharge head A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion ... 01/05/06 - 20060003557 - Atomic layer deposition metallic contacts, gates and diffusion barriers The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic ... 11/24/05 - 20050260833 - Constant emissivity deposition member A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the ... ### FreshPatents.com Support |