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Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > Amorphous Semiconductor > Compound Semiconductor Compound SemiconductorCompound Semiconductor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/12/07 - 20070082467 - Method for manufacturing compound semiconductor substrate (d) separating the support substrate 3 from the multilayer substrate. ... 04/05/07 - 20070077734 - Thin buffer layers for sige growth on mismatched substrates Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is ... 03/08/07 - 20070054476 - Method of producing a nitride semiconductor device and nitride semiconductor device AlxInyGa1-x-yN (0≦x≦1; 0≦x≦1; 0≦x+y≦1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN (0≦x≦1; 0≦y≦1; 0≦x+y≦1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the ... 03/08/07 - 20070054475 - Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including ... 03/01/07 - 20070048977 - Method of depositing ge-sb-te thin film There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other ... 12/21/06 - 20060286782 - Layer growth using metal film and/or islands A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface of a lower layer. The nitride film is ... 11/23/06 - 20060264011 - Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a ... 11/02/06 - 20060246692 - Semiconductor sensor and method for manufacturing same The present invention relates to a semiconductor sensor and method for manufacturing same, which makes it possible to form on a Si substrate an InSb or InAs film having a high electron mobility and a comparatively high sheet resistance, and to provide a highly sensitive, low power consumption, high quality ... 10/19/06 - 20060234479 - Implantation-less approach to fabricating strained semiconductor on isolation wafers A method of fabrication of semiconductor substrate structure comprising the following. A buffer layer is formed on the Si Substrate. We form a SiGe layer on the novel buffer layer. The buffer layer has defects therein so that the buffer layer is oxidized to form a buried isolation layer comprised ... 10/05/06 - 20060223288 - Group-iii nitride semiconductor stack, method of manufacturing the same, and group-iii nitride semiconductor device A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature deposited layer formed on the group-III nitride layer and made of nitride in which group-III element composition is continuously changed, and a second group-III ... 10/05/06 - 20060223287 - Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source ... 09/28/06 - 20060216914 - Method of growing non-polar a-plane gallium nitride The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium ... 08/03/06 - 20060172513 - Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality ... 08/03/06 - 20060172512 - Substrate of gallium nitride single crystal and process for producing the same The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the ... 07/27/06 - 20060166468 - Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second ... 07/13/06 - 20060154455 - Gallium nitride-based devices and manufacturing process A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions ... 07/13/06 - 20060154454 - Method for fabricating gan-based nitride layer The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a wetting layer having of forming a wetting layer having a composition of In(x1)Ga(y1)N (0<x1≦1, 0≦y1<1, x1+y1=1) on the silicon carbide buffer layer, and a step of forming a nitride ... 06/22/06 - 20060134893 - Fabrication of strained heterojunction structures Growth of multilayer films is carried out in a manner which allows close control of the strain in the grown layers and complete release of the grown films to allow mounting of the released multilayer structures on selected substrates. A layer of material, such as silicon-germanium, is grown onto a ... 06/22/06 - 20060134892 - Method of enhancing the photoconductive properities of a semiconductor and method of producing a semiconductor with enhanced photoconductive properties A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material ... 06/15/06 - 20060128125 - Gate electrodes and the formation thereof A method of fabricating a gate electrode for a semiconductor comprising the steps of: providing a substrate; providing on the substrate a layer of a first material of thickness tp, the first material being selected from the group consisting of Si, Si1-x—Gex alloy, Ge and mixtures thereof and a layer ... 06/15/06 - 20060128124 - Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density. ... 06/08/06 - 20060121702 - Iii-nitride light emitting devices fabricated by substrate removal Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, ... 06/08/06 - 20060121701 - Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. It also provides methods to monolithically integrate solar cells made on such compound thin films to form modules. In one ... 06/08/06 - 20060121700 - Method of forming a gate insulator in group iii-v nitride semiconductor devices A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing ... 05/25/06 - 20060110896 - Compound semiconductor particles and production process therefor There are provided: compound semiconductor particles that can display more excellent performance in functions peculiar to the compound semiconductor (e.g. luminosity and luminescence efficiency); and a production process for obtaining such compound semiconductor particles with economy, good productivity, and ease. Compound semiconductor particles, according to the present invention, are characterized ... 03/23/06 - 20060063358 - Method for preventing sidewall consumption during oxidation of sgoi islands A method of forming a substantially relaxed SiGe-on-insulator substrate in which the consumption of the sidewalls of SiGe-containing island structures during a high temperature relaxation annealing is substantially prevented or eliminated is provided. The method serves to maintain the original lateral dimensions of the patterned SiGe-containing islands, while providing a ... 03/09/06 - 20060051942 - Method for producing group iii element nitride single crystal and group iii element nitride transparent single crystal prepared thereby A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an ... 02/16/06 - 20060035446 - Apparatus of catalytic molecule beam epitaxy and process for growing iii-nitride materials using the apparatus This invention relates to an apparatus of catalytic molecule beam epitaxy (cat-MBE) and process for growing Group III nitride materials using thereof, characteristically in that said apparatus is equipped with a hot wire to catalytically decompose gaseous ammonium or nitrogen molecule into activated nitrogen radicals as the nitrogen source for ... 01/26/06 - 20060019470 - Directionally controlled growth of nanowhiskers Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> ... 01/12/06 - 20060009012 - Methods of fabricating semiconductor heterostructures Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer ... 01/05/06 - 20060003556 - Method of growing semi-insulating gan layer Disclosed herein is a method for growing a semi-insulating GaN layer with high sheet resistance by controlling the size of grains through changes in growth temperature at the initial growth stage of the layer, without doping of dopants. The method comprises the steps of growing a buffer layer on a ... 12/29/05 - 20050287772 - Process for producing a web of a semiconductor material Process for producing a web of a semiconductor material The invention relates to a process for producing two webs of a semiconductor material, in which a sacrificial web of a first material is produced on a semiconductor substrate, in which the first material is selected in such a way that ... 11/03/05 - 20050245054 - Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the same A mask with rectangular openings is formed on a large-scaled silicon substrate, and an AlN micro crystalline layer is formed in a thickness of 200 nm or over through the mask on the silicon substrate by means of selective and lateral growth. Then, a nitride semiconductor crystal layer with a ... 10/27/05 - 20050239271 - Heteroepitaxial growth method for gallium nitride A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate and a step B of depositing or vapor ... 10/20/05 - 20050233555 - Adhesion improvement for low k dielectrics to conductive materials Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based ... 10/13/05 - 20050227458 - Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, a When a semiconductor light emitting device or a semiconductor device is produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having ... 10/06/05 - 20050221592 - Method of growing iii-v compound semiconductor layer, substrate product, and semiconductor device A method for growing a GaInNAs layer on a supporting base comprises the steps of supplying antimony to the surface of a supporting base, and growing a GaInNAs layer on the surface after supplying the antimony. The GaInNAs layer is grown after supplying the antimony. In the step of supplying ... 08/04/05 - 20050170617 - Film formation method and apparatus for semiconductor process In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature ... 07/21/05 - 20050158971 - Relaxed silicon germanium substrate with low defect density A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided. ... 06/23/05 - 20050136627 - Method to reduce crystal defects particularly in group iii-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum ... ### FreshPatents.com Support |