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Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > Amorphous Semiconductor Amorphous SemiconductorAmorphous Semiconductor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/22/07 - 20070042574 - Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device that can prevent short-circuiting between gate electrodes and increases in the leakage current of a capacitive insulating film caused by the bottom electrode of the capacitor is provided. The method for manufacturing a semiconductor device according to the present invention comprises a first ... 12/28/06 - 20060292836 - Manufacturing method of polysilicon A manufacturing method of polysilicon is provided. First, a substrate is provided, and an amorphous silicon layer is formed on the substrate. Then, a buffer layer is formed on the amorphous silicon layer, and a metal catalysis solution is applied onto the surface of the buffer layer, wherein the metal ... 12/21/06 - 20060286781 - Crystal imprinting methods for fabricating subsrates with thin active silicon layers Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a ... 12/21/06 - 20060286780 - Method for forming silicon thin-film on flexible metal substrate Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film ... 09/07/06 - 20060199357 - High stress nitride film and method for formation thereof A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, ... 07/20/06 - 20060160335 - Rare earth element-doped silicon/silicon dioxide lattice structure Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a substrate; DC sputtering a layer of amorphous Si overlying the substrate; DC sputtering a rare earth element; in response, doping the Si layer with ... 07/13/06 - 20060154453 - Method(s) of forming a thin layer A method of forming a thin layer including providing a first single-crystalline silicon layer partially exposed through an opening in an insulation pattern and forming an epitaxial layer on the first single-crystalline silicon layer and forming an amorphous silicon layer on the insulation pattern, the amorphous silicon layer having a ... 07/06/06 - 20060148216 - Semiconductor film, semiconductor device and method for manufacturing same Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, ... 07/06/06 - 20060148215 - Method of fabricating a field effect transistor having improved junctions A method of forming a field effect transistor is provided which includes forming an amorphized semiconductor region having a first depth from a single-crystal semiconductor region and subsequently forming a first gate conductor above a channel portion of the amorphized semiconductor region. A first dopant including at least one of ... 06/22/06 - 20060134891 - Method for manufacturing semiconductor device An object of the present invention is to provide a method for manufacturing a semiconductor device in which, after crystallizing by using an element that promotes crystallization, holes are prevented from being generated in a crystalline semiconductor film with a concentration of the element in the crystalline semiconductor film decreased ... 05/25/06 - 20060110895 - Method of fabricating silicon-based mems devices A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure ... 05/18/06 - 20060105551 - Method of manufacturing a polysilicon layer and a mask used therein A method of manufacturing a polysilicon layer is provided. Firstly, a substrate is provided. Next, an amorphous silicon having a first region and a second region is formed on the substrate. After that, the amorphous silicon layer in the first region is completely melted and the amorphous silicon layer in ... 05/11/06 - 20060099778 - Method of preparing semiconductor film on a substrate A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° ... 05/04/06 - 20060094213 - Method for crystallizing silicon using a ramp shaped laser beam A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a ramp shaped cross sectional profile that decreases in a scanning direction; and performing a second crystallization by moving a predetermined length ... 04/27/06 - 20060088986 - Method of enhancing laser crystallization for polycrystalline silicon fabrication An amorphous silicon layer and at least a heat-retaining layer are formed on a substrate in turn. Wherein, the heat-retaining layer is controlled to have an anti-reflective thickness for reducing the threshold laser energy to effect the melting of the amorphous silicon layer. Then, a laser irradiation process is performed ... 03/16/06 - 20060057826 - System and method for suppression of wafer temperature drift in cold-wall cvd systems An apparatus and corresponding method are disclosed that uses one or more optical fibers in a susceptor that monitor radiation emitted by the backside of the susceptor. The optical fibers are filtered and converted into an electrical signal. A control system is used to maintain a constant wafer temperature by ... 02/09/06 - 20060030131 - Method for fabricating crystalline silicon The present invention provides methods of manufacturing of silicon in substantially crystalline form out of amorphous silicon. ... 01/26/06 - 20060019469 - Deposition of nano-crystal silicon using a single wafer chamber Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed ... 12/29/05 - 20050287771 - Liquid precursors for the cvd deposition of amorphous carbon films Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor ... 12/01/05 - 20050266663 - Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD). ... 10/20/05 - 20050233554 - Manufacturing method for semiconductor device and semiconductor manufacturing apparatus The present invention provides a technology for suppressing occurrence of abnormality on a surface of a silicon film other than a single crystal film formed on a wafer. A silicon film is formed on a wafer in step S1 and an oxide film functioning as an abnormality suppression film for ... 10/20/05 - 20050233553 - Method of fabricating semiconductor by nitrogen doping of silicon film A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment ... 09/22/05 - 20050208740 - Process for deposition of semiconductor films Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful ... 06/09/05 - 20050124144 - Electrical connecting apparatus The electrical connecting apparatus according to the present invention includes first, second and third plate members having plate-like portions at intervals from each other in the thickness direction, each plate-like member having a plurality of through holes in the plate-like portions; and a plurality of probes having projected portions passed ... ### FreshPatents.com Support |