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Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > On Insulating Substrate Or Layer > Utilizing Epitaxial Lateral Overgrowth Utilizing Epitaxial Lateral OvergrowthUtilizing Epitaxial Lateral Overgrowth patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072399 - Semiconductor devices having epitaxial layers with suppressed lateral growth and related methods of manufacturing such devices Semiconductor devices are provided having a selective epitaxial growth layer that exhibits suppressed lateral growth. These semiconductor devices may include a semiconductor substrate having a silicon region, and an epitaxial growth layer formed on the silicon region. The epitaxial growth layer may comprise alternatively stacked silicon and silicon germanium epitaxial ... 01/25/07 - 20070020894 - Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains of the substrate are chosen such ... 01/18/07 - 20070015346 - Mixed orientation and mixed material semiconductor-on-insulator wafer The present disclosure relates, generally, to a semiconductor substrate with a planarized surface comprising mixed single-crystal orientation regions and/or mixed single-crystal semiconductor material regions, where each region is electrically isolated. In accordance with one embodiment of the disclosure CMOS devices on SOI regions are manufactured on semiconductors having different orientations. ... 01/18/07 - 20070015345 - Lateral growth method for defect reduction of semipolar nitride films A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas ... 11/30/06 - 20060270201 - Nano-air-bridged lateral overgrowth of gan semiconductor layer A technique for growing a high quality gallium nitride layer on a uniform nano-patterned substrate is described. The invented technique is based on the transfer of ordered nano-patterns from a nano-template to the substrate, followed by the growth of gallium nitride on the nano-patterned substrate. The nano-patterned substrate serves as ... 11/30/06 - 20060270200 - Iii group nitride semiconductor substrate, substrate for group iii nitride semiconductor device, and fabrication methods thereof A III group nitride semiconductor substrate according to the present invention is fabricated by forming a metal film or metal nitride film 2′ with mesh structure in which micro voids are provided on a starting substrate 1, and growing a III group nitride semiconductor crystal layer 3 via the metal ... 11/16/06 - 20060258125 - Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression ... 11/09/06 - 20060252236 - Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device includes forming an island-patterned layer of a first semiconductor material, which includes a plurality of separated islands, on a semiconductor substrate, and epitaxially growing a base layer of a second semiconductor material on the island-patterned layer. ... 08/10/06 - 20060177995 - Voltage sustaining layer with opposite-doped islands for semiconductor power devices A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n (or p)-layer containing a plurality of floating p (or n)-islands. The effect of the floating islands is to absorb a large part of the electric flux when ... 08/03/06 - 20060172511 - In situ formed halo region in a transistor device By performing a sequence of selective epitaxial growth processes with at least two different species, or by introducing a first dopant species prior to the epitaxial growth of a drain and source region, a halo region may be formed in a highly efficient manner, while at the same time the ... 05/04/06 - 20060094212 - Thin film transistor and method of manufacturing the same A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film ... 03/16/06 - 20060057825 - Semiconductor devices with reduced active region defects and unique contacting schemes A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that ... 03/02/06 - 20060046443 - Method of forming a layer comprising epitaxial silicon The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material ... 03/02/06 - 20060046442 - Method of forming epitaxial silicon-comprising material and a method of forming a vertical transistor The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material ... 02/23/06 - 20060040477 - Method and apparatus for forming expitaxial layers The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical Vapor Deposition apparatus (10) comprising a ... 12/29/05 - 20050287770 - Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the present invention comprises heating a porous silicon deposition surface of a porous silicon substrate to a temperature operable for expitaxial ... 11/10/05 - 20050250298 - In situ doped epitaxial films A method for depositing an in situ doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 80 torr in a process chamber housing a patterned substrate. The method further comprises providing a flow of dichlorosilane to the process chamber. The method further comprises providing a flow of ... 08/11/05 - 20050176220 - Semiconductor device and method for manufacturing thereof A semiconductor device for efficiently forming a raised structure at a source/drain part of an MISFET having a gate electrode formed with a metal material by low temperature processes and a method therefore are provided. In a silicon buffer film formation process, a silicon buffer film is formed within a ... 06/23/05 - 20050136626 - Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium ... ### FreshPatents.com Support |