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Semiconductor Device Manufacturing: Process > Formation Of Semiconductive Active Region On Any Substrate (e.g., Fluid Growth, Deposition) > On Insulating Substrate Or Layer On Insulating Substrate Or LayerOn Insulating Substrate Or Layer patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/08/07 - 20070054474 - Crack-free iii-v epitaxy on germanium on insulator (goi) substrates A method of forming III-V epitaxy on a germanium-on-insulator (GOI) substrate having a bonded layer and a handle substrate begins with measuring a lattice parameter of the bonded layer at a first temperature. The lattice parameter of the bonded layer, which is a function of a coefficient of thermal expansion ... 02/22/07 - 20070042573 - Methods of forming conductive polysilicon thin films via atomic layer deposition and methods of manufacturing semiconductor devices including such polysilicon thin films A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a ... 02/01/07 - 20070026646 - Method for arraying nano material and method for fabricating liquid crystal display device using the same A method for arraying nano material includes preparing a substrate coated with a dispersion solution where nano materials are dispersed and arraying the nano materials in the dispersion solution, in a uniform direction using a charged body. ... 01/25/07 - 20070020893 - Low defect epitaxial semiconductor substrate having gettering function, image sensor using the same, and fabrication method thereof Low defect epitaxial semiconductor substrates having a gettering function and methods of fabricating such substrates are described. A substrate in accordance with this invention includes a semiconductor substrate, a non-carrier characteristic dopant layer formed in the semiconductor substrate, a carrier characteristic dopant layer including the non-carrier characteristic dopant layer therein, ... 01/25/07 - 20070020892 - Method of fabricating semiconductor device using selective epitaxial growth A method of fabricating a semiconductor device using selective epitaxial growth (SEG) is disclosed. The method comprises; forming a seed window exposing a portion of a substrate through an interlayer insulating layer, growing a single crystal silicon SEG layer in the seed window using the exposed portion of the substrate ... 01/25/07 - 20070020891 - Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% ... 01/04/07 - 20070004184 - Low dislocation density group iii nitride layers on silicon carbide substrates and methods of making the same Group III nitride semiconductor device structures are provided that include a silicon carbide (SiC) substrate and a Group III nitride epitaxial layer above the SiC substrate. The Group III nitride epitaxial layer has a dislocation density of less than about 4×108 cm−2 and/or an isolation voltage of at least about ... 01/04/07 - 20070004183 - Two-phase thermal method for preparation of cadmium sulfide quantum dots The present invention relates to a two-phase thermal method for the preparation of cadmium sulfide quantum dots. In the method, cadmium carboxylate containing 2 to 18 carbon atoms or cadmium oxide is selected as cadmium source; thiourea or thioacetamide is selected as sulfur source; oleic acid or trioctylphosphine oxide (TOPO) ... 12/21/06 - 20060286778 - Method of manufacturing dual orientation wafers Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isolation structures are formed to isolate the silicon material in ... 11/30/06 - 20060270199 - Process for producing high-purity silicon and apparatus When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point ... 11/23/06 - 20060264010 - Methods of forming layers comprising epitaxial silicon The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. ... 11/23/06 - 20060264009 - Method for significant reduction of dislocations for a very high a1 composition a1gan layer A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate. ... 11/23/06 - 20060264008 - Surface treatment after selective etching The invention concerns a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon beneath the SiGe layer. The strained silicon layer is denuded by a step of selective etching of the SiGe layer by dispensing an etching solution onto the ... 11/16/06 - 20060258124 - Low temperature epitaxial growth of silicon-containing films using close proximity uv radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., ... 11/02/06 - 20060246691 - Signal and/or ground planes with double buried insulator layers and fabrication process The present invention describes a method including the steps of providing a single crystal semiconductor substrate, forming a layer of rare earth silicide on a surface of the semiconductor substrate, forming a first layer of insulating material on the layer of rare earth silicide, forming a layer of electrically conductive ... 10/19/06 - 20060234478 - Semiconductor device substrate and method of manufacturing semiconductor device substrate A method of manufacturing a semiconductor device substrate includes forming a mask layer pattern on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the pattern of the mask layer to form a trench leading to the ... 09/14/06 - 20060205189 - Manufacturable recessed strained rsd structure and process for advanced cmos A manufacturable way to recess silicon that employs an end point detection method for the recess etch and allows tight tolerances on the recess is described for fabricating a strained raised source/drain layer. The method includes forming a monolayer oxygen and carbon on a surface of a doped semiconductor substrate; ... 08/31/06 - 20060194418 - Smooth surface liquid phase epitaxial germanium A method is provided for forming a liquid phase epitaxial (LPE) germanium (Ge)-on-insulator (GOI) thin-film with a smooth surface. The method provides a silicon (Si) wafer, forms a silicon nitride insulator layer overlying the Si wafer, and selectively etches the silicon nitride insulator layer, forming a Si seed access region. ... 08/31/06 - 20060194417 - Polycrystalline sillicon substrate A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by ... 07/20/06 - 20060160334 - Epitaxial growth method Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer using a ... 07/13/06 - 20060154452 - Silicon film, crystalline film and method for manufacturing the same A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon film and/or crystalline film may include forming a insulating substrate, forming a buffer layer using a material selected from the ... 07/13/06 - 20060154451 - Epitaxial growth method An epitaxial growth method for forming a high-quality epitaxial growth semiconductor wafer is provided. The method includes forming a single crystalline layer on a single crystalline wafer; forming a mask layer having nano-sized dots on the single crystalline layer; forming a porous buffer layer having nano-sized pores by etching the ... 07/06/06 - 20060148214 - Method for manufacturing strained silicon In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while ... 06/29/06 - 20060141754 - Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, ... 06/15/06 - 20060128123 - Methods of forming integrated circuits structures including epitaxial silicon layers in a active regions An integrated circuit structure can include an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions and an insulation layer that extends from the isolation structure to beneath the active region. An epitaxial silicon layer extends from the active region through the ... 05/18/06 - 20060105550 - Method of depositing material on a substrate for a device The present invention provides a method of depositing material on a substrate for a device. The method includes providing the substrate having a deformable surface. The method also includes imprinting a structure into the deformable surface in a manner such that a base surface and at least one projection is ... 05/11/06 - 20060099777 - Method of fabricating single-crystal silicon film and method of fabricating tft adopting the same A method for forming a single-crystal silicon film of high quality is provided. The method includes the operations of: growing single-crystal silicon to a predetermined thickness of a crystal growth plate; depositing a buffer layer on the single-crystal silicon layer; forming a partition layer at a predetermined depth in the ... 05/11/06 - 20060099776 - Methods for fabricating compound material wafers Methods for fabricating compound material wafers are described. An embodiment of the method includes providing a donor substrate having a surface, forming a weakened zone in the donor substrate to define a transfer layer that includes the donor substrate surface, bonding the surface of the transfer layer to a handle ... 04/27/06 - 20060088985 - Low temperature silicon compound deposition Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride ... 04/13/06 - 20060079073 - Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas ... 04/06/06 - 20060073681 - Nanoheteroepitaxy of ge on si as a foundation for group iii-v and ii-vi integration A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. The interface layer can be, for example, SiO2, Si3N4, Al2O3, or W. A template can then be made by forming a plurality of ... 04/06/06 - 20060073680 - Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically ... 03/09/06 - 20060051941 - Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. ... 03/02/06 - 20060046441 - Method of monitoring selectivity of selective film growth method, and semiconductor device fabrication method According to the present invention, there is provided a selectivity monitoring method in a selective film growth method of selectively growing a film in a predetermined region on a semiconductor substrate, comprising: selectively growing the film on a surface of the semiconductor substrate while measuring temperature of the surface of ... 03/02/06 - 20060046440 - Methods of forming layers comprising epitaxial silicon The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. ... 03/02/06 - 20060046439 - Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method The invention relates to a method of manufacturing a semiconductor device (10) in which, in a semiconductor body (1) with a temporary substrate (2), at least one semiconductor element (3) is formed which, on a side of the semiconductor body (1) opposite to the substrate (2), is provided with at ... 02/23/06 - 20060040476 - Patterning soi with silicon mask to create box at different depths The present invention provides a method of fabricating a patterned silicon-on-insulator substrate which includes dual depth SOI regions or both SOI and non-SOI regions within the same substrate. The method of the present invention includes forming a silicon mask having at least one opening on a surface of Si-containing material, ... 01/05/06 - 20060003555 - Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers is a doped and relaxed semiconductor layer underneath a strained semiconductor layer; converting ... 01/05/06 - 20060003554 - Structure and method for manufacturing planar soi substrate with multiple orientations The present invention provides a method of forming a substantially planar SOI substrate having multiple crystallographic orientations including the steps of providing a multiple orientation surface atop a single orientation layer, the multiple orientation surface comprising a first device region contacting and having a same crystal orientation as the single ... 12/22/05 - 20050282364 - Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film substrate with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the radiation timing or power density of the at least two types of ... 12/15/05 - 20050277273 - Method for introducing impurities and apparatus for introducing impurities A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous ... 12/15/05 - 20050277272 - Low temperature epitaxial growth of silicon-containing films using uv radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., ... 12/01/05 - 20050266662 - Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition A nanowire of a semiconductor material and having a uniform cross-sectional area along its length is grown using a chemical vapor deposition process. In the method, a substrate is provided, a catalyst nanoparticle is deposited on the substrate, a gaseous precursor mixture comprising a constituent element of the semiconductor material ... 11/24/05 - 20050260832 - Polycrystalline sige junctions for advanced devices A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused ... 11/03/05 - 20050245053 - Semiconductor device and process for fabricating the same After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is ... 10/20/05 - 20050233552 - Strained channel on insulator device A semiconductor device 10 includes a substrate 12 (e.g., a silicon substrate) with an insulating layer 14 (e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer 16 (e.g., SiGe) is disposed on the insulating layer 14 and a second semiconducting material layer 18 (e.g., Si) ... 10/13/05 - 20050227457 - Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein ... 10/06/05 - 20050221591 - Method of forming high-quality relaxed sige alloy layers on bulk si substrates A method of forming a high-quality relaxed SiGe alloy layer on a bulk Si-containing substrate is provided. The method of the present invention includes growing a strained SiGe alloy layer on a Si-containing substrate that has a porous Si-containing layer at or near the surface of the Si-containing substrate. The ... 09/15/05 - 20050202653 - High density plasma process for silicon thin films A method is provided for forming a Si and Si—Ge thin films. The method comprises: providing a low temperature substrate material of plastic or glass; supplying an atmosphere; performing a high-density (HD) plasma process, such as an HD PECVD process using an inductively coupled plasma (ICP) source; maintaining a substrate ... 08/25/05 - 20050186764 - Method for lifting offgan pseudomask epitaxy layerusing wafer bonding way Present invention is a method for lifting off GaN pseudomask epitaxy layer using wafer bonding way, wherein GaN epitaxy is obtained by way of selective area growth on a seed and the growth is in a way of pseudomask growth over a substrate. Owing to the different thermal expansion coefficients ... 08/18/05 - 20050181582 - Contact structure of wiring and a method for manufacturing the same First, a conductive material made of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed, and a semiconductor layer and an ohmic contact layer are sequentially formed. Next, a conductor layer ... 08/11/05 - 20050176219 - Methods of forming mosfets using crystalline sacrificial structures and mosfets so formed A Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) can be formed by growing an epitaxial semiconductor layer on an upper surface of a sacrificial crystalline structure and on a substrate to form a buried sacrificial structure. The buried sacrificial structure can be removed to form a void in place of the buried sacrificial structure ... 07/21/05 - 20050158970 - Tri-gate transistors and methods to fabricate same Embodiments of the invention provide a method for effecting uniform silicon body height for silicon-on-insulator transistor fabrication. For one embodiment, a sacrificial oxide layer is disposed upon a semiconductor substrate. The oxide layer is etched to form a trench. The trench is then filled with a semiconductor material. The semiconductor ... 06/23/05 - 20050136625 - Ultra-thin glass devices Techniques for fabricating devices including an ultra-thin glass and such devices are described. An ultra-thin glass substrate having a thickness less than or equal to 200 microns is fixed to a first mechanically stable support such that the substrate can be removed from the support without damaging the substrate. A ... 06/16/05 - 20050130393 - Method for improving the quality of heterostructure A method for improving the quality of a heterostructure that includes at least two layers of material that have different thermal expansion coefficients is described. The method includes applying a cap layer to the exposed surface of at least one of the layers. The cap layer is made of a ... ### FreshPatents.com Support |