REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Semiconductor Device Manufacturing: Process > Gettering Of Substrate > By Implanting Or Irradiating > Ionized Radiation (e.g., Corpuscular Or Plasma Treatment, Etc.) > Hydrogen Plasma (i.e., Hydrogenization) Hydrogen Plasma (i.e., Hydrogenization)Hydrogen Plasma (i.e., Hydrogenization) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.09/21/06 - 20060211221 - Method for producing a strained layer on a substrate and corresponding layer structure The invention relates to a method for producing a layer structure comprising a strained layer on a substrate. The inventive method comprises the steps of producing a defect area in a layer adjoining the layer to be strained, and relaxing at least one layer adjoining the layer to be strained. ... 08/24/06 - 20060189102 - Process for treating substrates for the microelectronics industry, and substrates obtained by this process A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical ... 04/20/06 - 20060084242 - Memory device and method of manufacturing including deuterated oxynitride charge trapping structure A method for manufacturing a charge storage stack including a bottom dielectric layer, a charge trapping structure on the bottom dielectric layer, and a top dielectric layer, each comprising silicon oxynitride, are formed using reactant gases that comprise hydrogen, where the hydrogen comprises at least 90 percent deuterium isotope. The ... 09/29/05 - 20050215034 - Reduction of native oxide at germanium interface using hydrogen-based plasma A germanium substrate is positioned in a process chamber. A plasma is generated from a treatment gas that includes a flow of a hydrogen-containing gas. The plasma is provided to the process chamber to react with GeO2 in the germanium substrate. ... 09/15/05 - 20050202652 - High-density plasma hydrogenation A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than 400° C., using a high density plasma source, such as an inductively coupled plasma (ICP) source; introducing an atmosphere including H2 at ... 07/14/05 - 20050153526 - Method for manufacturing a semiconductor device having a low junction leakage current A method for manufacturing a DRAM device includes a hydrogenating step conducted to source/drain diffused regions in a hydrogen ambient at a substrate temperature not lower than 350 degrees C., and a dehydrogenating step in an inactive gas ambient at a substrate temperature of lower than 350 degrees C., before ... ### FreshPatents.com Support |