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Semiconductor Device Manufacturing: Process > Gettering Of Substrate > By Implanting Or Irradiating By Implanting Or IrradiatingBy Implanting Or Irradiating patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/22/07 - 20070066035 - Cleaved silicon substrate active device A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions; forming gettering regions underling the S/D regions; implanting ... 03/22/07 - 20070066034 - Semiconductor substrate with islands of diamond and resulting devices Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the substrate, and the ... 03/22/07 - 20070066033 - Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended) By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present ... 01/11/07 - 20070010069 - Hand-held laser cutting apparatus and method using same A hand-held apparatus is disclosed, where that hand-held apparatus comprises a hand piece having an output end, a switch disposed on that hand piece, wherein that switch includes “on” position and an “off” position, and wherein a laser beam is directed outwardly from the output end of the hand piece ... 06/22/06 - 20060134889 - Application of post-pattern resist trim for reducing pocket-shadowing in srams Methods (600, 700) are disclosed for minimizing the effect of pocket shadowing in the fabrication of an angled pocket implant (32) extending underlying a gate region (21) of a transistor (10), particularly in SRAM devices (400). The pocket shadowing is minimized by initially forming a relatively thick resist layer (810) ... 04/06/06 - 20060073678 - System and method for hydrogen exfoliation gettering A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions; forming gettering regions underling the S/D regions; implanting ... 06/09/05 - 20050124142 - Transposed split of ion cut materials A method for the transposed splitting of ion cut materials. Getters are formed and selectively introduced into a solid material. In addition, atoms are introduced into the solid material at a location that is offset spatially from the locating of the getters. The atoms introduced into the solid material are ... ### FreshPatents.com Support |