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Semiconductor Device Manufacturing: Process > Gettering Of Substrate Gettering Of SubstrateGettering Of Substrate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.09/28/06 - 20060216912 - Methods to manufacture contaminant-gettering materials in the surface of euv optics Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed ... 08/17/06 - 20060183299 - Electronic device sealed under vacuum containing a getter and method of operation An electronic device that is sealed under vacuum includes a substrate, a transistor formed on the substrate, and a dielectric layer covering at least a portion of the transistor. The electronic device further includes a layer of non-evaporable getter material disposed on a portion of the dielectric layer; and a ... 01/12/06 - 20060009011 - Method for recycling/reclaiming a monitor wafer The present invention provides a method for recycling/reclaiming a monitor wafer and a method for testing a manufacturing process. The method for recycling/reclaiming the monitor wafer, among other steps, includes providing a monitor wafer having a number of front surface defects thereon (110), and annealing the monitor wafer in a ... 11/17/05 - 20050255677 - Integrated circuit with impurity barrier An integrated circuit with an interface between a semiconductor layer (having a selected region) and a second layer has a barrier with a gettering effect that 1) substantially circumscribes the selected region and 2) extends to the interface. Despite the fact that its gettering effect extends to the interface, the ... 11/10/05 - 20050250297 - Process for metallic contamination reduction in silicon wafers A process for removing a contaminant selected from among copper, nickel, and a combination thereof from a silicon wafer having a surface and an interior. The process comprises cooling the silicon wafer in a controlled atmosphere from a temperature at or above an oxidation initiation temperature and initiating a flow ... 09/22/05 - 20050208739 - Methods and apparatus for attaching getters to mems device housings A method for reducing occurrences of loose gettering material particles within micro-electromechanical system (MEMS) devices is described. The MEMS devices include a micro-machine within a substantially sealed cavity formed by a housing and a cover for the housing. The cavity containing a getter mounted on a getter substrate which is ... 07/21/05 - 20050158969 - Control of thermal donor formation in high resistivity cz silicon The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of forming thermal donors in an amount sufficient to affect ... 06/23/05 - 20050136623 - Shallow amorphizing implant for gettering of deep secondary end of range defects A pocket implant process to reduce defects. We provide a gate structure, on a semiconductor substrate doped with a first conductivity type dopant. We perform a pocket amorphizing implantation procedure to form a pocket implant region adjacent to the gate structure, and an amorphous pocket region. Next, we perform a ... ### FreshPatents.com Support |