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Semiconductor Device Manufacturing: Process > Semiconductor Substrate Dicing > Having Specified Scribe Region Structure (e.g., Alignment Mark, Plural Grooves, Etc.)

Having Specified Scribe Region Structure (e.g., Alignment Mark, Plural Grooves, Etc.)

Having Specified Scribe Region Structure (e.g., Alignment Mark, Plural Grooves, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

03/29/07 - 20070072395 - Substrate and method of separating components from a substrate
A substrate (1) having a first groove (4) is provided with a plurality of protrusions (3) on the first groove (4). These protrusions (4) can have a top with an apex angle of 30 to 150 degrees and results in a controlled breaking of the substrate (1) and a minimum ...

03/29/07 - 20070072394 - Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device
A semiconductor device manufacturing apparatus is provided with a drawing pattern printing part having a print head which injects a conductive solvent, an insulative solvent and an interface treatment solution. The print head is formed in such a way that desired circuit drawing pattern can be printed on a wafer ...

03/22/07 - 20070066032 - Nanopowder coating for scribing and structures formed thereby
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a conformal layer of a water soluble nanopowder on a wafer, and then scribing the wafer. ...

03/08/07 - 20070054471 - Alignment mark and method of forming the same
An alignment mark is fabricated containing a mark portion and a trench structure. The trench structure surrounds the mark portion and is at a distance from the mark portion. The mark portion has a plurality of notches. Due to the erosion effect caused by the trench structure, it can prevent ...

01/25/07 - 20070020889 - Method for manufacturing semiconductor device
Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, a device isolation film having a step difference occurring during a process of forming a device isolation film in a scribe lane region serves as a first alignment key, and a second alignment key formed ...

01/18/07 - 20070015343 - Method for dicing a semiconductor wafer
A method for dicing a semiconductor wafer includes the steps of: forming grooves in an integrated circuit layer of the semiconductor wafer; forming a photoresist layer on the integrated circuit layer; forming V-shaped first notches, each of which is further indented from the integrated circuit layer; thinning the substrate; attaching ...

12/28/06 - 20060292833 - Substrate for forming semiconductor layer
A substrate for forming a semiconductor layer includes a plurality of linear convexes or grooves on a surface of the substrate by crystal growth. The plurality of linear convexes or grooves are formed along a direction of a cleavage plane of the semiconductor layer. ...

11/30/06 - 20060270196 - Methods of forming semiconductor devices and electrical interconnect structures in semiconductor devices and intermediate structures formed thereby
Methods of forming semiconductor device assemblies include forming a depression in a semiconductor chip while the semiconductor chip is disposed in the stack, and filling the depression with conductive material. Additional methods include ablating material of a semiconductor device to form a depression, and subsequently filling the depression conductive material. ...

08/03/06 - 20060172509 - Method for reducing stress concentrations on a semiconductor wafer by surface laser treatment
A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into ...

07/13/06 - 20060154449 - Method of laser processing a wafer
A method of laser processing a wafer having a plurality of devices that are composed of a laminate layer laminated on the front surface of a substrate, along a plurality of streets for sectioning the devices, comprising a first groove forming step for applying a first laser beam having absorptivity ...

07/13/06 - 20060154448 - Soi component comprising margins for separation
A method for producing a component is provided, in particular a deformation sensor, having a sensor element which includes at least one region that is sensitive with respect to expansion or compression, as well as electrical structures which are in connection therewith. To this end, a sacrificial layer is produced ...

07/06/06 - 20060148211 - Wafer dividing method
A wafer dividing method for cutting a wafer having devices which are composed of a laminate laminated on the front surface of a substrate with a cutting blade along a plurality of streets for sectioning the devices, comprising the steps of a groove forming step for forming two grooves deeper ...

04/27/06 - 20060088983 - Method of dividing wafer
In order to efficiently divide the wafer into individual devices in dicing the wafer without deteriorating the quality of the devices, the front surface of the wafer is coated with a resist film except the regions corresponding to the streets, grooves of a depth corresponding to the finished thickness of ...

03/02/06 - 20060046437 - Method for forming individual semi-conductor devices
The present invention provides a method that forms individual semiconductor devices from a semiconductor substrate including a first face having a first region in which micro-mechanical elements are formed and a second region which surrounds the first region and in which a scribe line is formed, and a second face ...

02/09/06 - 20060030129 - Method and apparatus for dividing an adhesive film mounted on a wafer
A method of dividing an adhesive film mounted on the back surface of a wafer having a plurality of streets formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of streets, along the streets in a state ...

02/09/06 - 20060030128 - Structure and method of liner air gap formation
A structure and method of a semiconductor device with liner air gaps next to interconnects and dielectric layers. A dielectric layer is formed over a lower dielectric layer and a lower interconnect over a substrate. We form an interconnect opening in the dielectric layer. The opening has sidewalls of the ...

02/02/06 - 20060024923 - Deep alignment marks on edge chips for subsequent alignment of opaque layers
A method of forming alignment marks on edge chips in a kerf region of a semiconductor workpiece. The alignment marks are formed in at least one material layer of the semiconductor device. The alignment marks are formed using a separate lithography mask, and may extend into lower layers, including the ...

02/02/06 - 20060024922 - Method for cutting wafer
A method for cutting wafer according to the invention includes a roller disposed below a pressing and grinding mechanism, and separates a piece of wafer into a plurality of small chips or dies by pressing and grinding scribe lines of the wafer, thereby optimizing efficiency of wafer cutting operations. ...

02/02/06 - 20060024921 - [method of relieving wafer stress]
A method of relieving wafer stress is provided. A wafer is provided, wherein at least a dielectric layer has already formed over the wafer and the wafer has a first and a second area. At least no circuits are formed on the dielectric layer within the first area. Thereafter, openings ...

01/26/06 - 20060019467 - Methods of fabricating integrated circuit chips for multi-chip packaging and wafers and chips formed thereby
Methods of forming integrated circuit chips include forming a plurality of criss-crossing grooves in a semiconductor wafer having a plurality of contact pads thereon and filling the criss-crossing grooves with an electrically insulating layer. The electrically insulating layer is then patterned to define at least first and second through-holes therein ...

01/05/06 - 20060003553 - Method of separating layers of material
A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on the substrate and a homogeneous ...

01/05/06 - 20060003552 - Wafer dividing method
A wafer dividing method for dividing a wafer along a first set of plural streets extending parallel to each other, and a second set of plural streets extending parallel to each other and extending perpendicularly to the first set of the streets, the wafer having a plurality of rectangular regions ...

01/05/06 - 20060003551 - Ultra-thin die and method of fabricating same
In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results ...

12/22/05 - 20050282361 - Semiconductor wafer and manufacturing process thereof
A semiconductor wafer includes a wafer body, a plurality of analog IC dies spacedly and alignedly formed on the wafer body to define a scribe line as a margin formed between each two dies wherein each of the dies has an internal circuit formed therewithin and at least a terminal ...

12/22/05 - 20050282360 - Semiconductor wafer and manufacturing process for semiconductor device
A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a ...

12/08/05 - 20050272226 - Semiconductor wafer having electrically connected passive device chips, passive devices and semiconductor package using the same
A semiconductor wafer includes a plurality of passive device units, which are electrically connected across scribe lines. Passive device chips in the wafer that are adjacent to one another in a first direction are electrically connected in parallel, while passive device units adjacent to one another in a second direction ...

12/01/05 - 20050266661 - Semiconductor wafer with ditched scribe street
A semiconductor wafer (10) and associated methods are disclosed in which a plurality of semiconductor dice (14) include a semiconductor substrate (12) overlain by a plurality of upper layers (13) are provided with encompassing scribe streets (20) at the top surface (16) of the wafer (10) defined by inactive areas ...

11/17/05 - 20050255676 - Configuring a performance state of an integrated circuit die on wafer
Techniques for configuring a performance state of an integrated circuit die that do not consume input/output pin connections to the integrated circuit die. An integrated circuit die according to the present teachings includes a set of configuration lines. Each configuration line determines a performance characteristic of the integrated circuit die. ...

11/03/05 - 20050245051 - Parting method for fragile material substrate and parting device using the method
There are provided a scribing step of performing scribing in a state in which a protective material is applied on at least one surface of a brittle material substrate, and a first scribing device that performs this scribing step. Accordingly, it is possible to form a vertical crack that reaches ...

10/20/05 - 20050233550 - Method of laser marking, laser marking apparatus and method and apparatus for detecting a mark
A method and apparatus for laser marking is disclosed. An interference fringe is formed on a subject to be marked using a laser beam to make a marking. ...

10/20/05 - 20050233549 - Multi-elevation singulation of device laminates in wafer scale and substrate processing
Wafer scale and substrate processing device singulation methods, and devices made by the methods, for singulation of discrete devices from a processed wafer or laminated structures, involves formation of separation scribes or saw cuts at multiple elevations in intersecting scribe streets or lines so that a separation cut in one ...

09/15/05 - 20050202650 - Method of dividing a wafer which has a low-k film formed on dicing lines
Semiconductor elements are formed in a wafer. At the upper layer of the wafer, a multilayer film including a low-relative-permittivity insulating film is formed. Thereafter, on a dicing line of the multilayer film, a metal layer functioning as at least an alignment mark and a test pad is formed. Next, ...

09/08/05 - 20050196941 - Dbg system and method with adhesive layer severing
An array of grooves (23) is formed in a first side (12) of a wafer (10) during a wafer processing method. A back grinding tape (16) is adhered to the first side. An amount of material is removed from the second side (20) of the wafer. An adhesive layer (30) ...

08/04/05 - 20050170615 - Method of manufacturing a semiconductor device having an alignment mark
A method of manufacturing a semiconductor device includes providing a substrate and forming a projecting alignment mark. The substrate includes an insulating layer and a semiconductor layer on the insulating layer, and the substrate includes device areas and a scribe line area which surrounds the device area in the semiconductor ...

07/07/05 - 20050148160 - Encapsulated semiconductor components and methods of fabrication
A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit side polymer layer, and terminal contacts on the contact bumps in a dense area array. A method for fabricating the ...

06/09/05 - 20050124141 - Row slicing method in tape head fabrication
A method and mechanism for slicing a thin film wafer. A closure is bonded to a section of a thin film wafer. A blade is used to slice a row from the section of the wafer by cutting through the closure and thin film wafer such that opposite sides of ...

06/02/05 - 20050118791 - Method of manufacturing semiconductor device and system of manufacturing semiconductor device
A method of manufacturing a semiconductor device is provided. A semiconductor module is prepared which has a wiring board and a plurality of semiconductor chips mounted on a first face of the wiring board. The semiconductor chips overlap a central region of the wiring board and an edge region of ...



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