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Semiconductor Device Manufacturing: Process > Bonding Of Plural Semiconductor Substrates > Thinning Of Semiconductor Substrate Thinning Of Semiconductor SubstrateThinning Of Semiconductor Substrate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.03/29/07 - 20070072393 - Method for preparing and assembling substrates A method for assembling a first and a second wafer of material, including routing at least the first wafer and assembling the first and second wafer. ... 03/15/07 - 20070059903 - Pressure-sensitive adhesive sheet and method of processing articles To provide a pressure-sensitive adhesive that is used in processing an article such as a semiconductor wafer, the pressure-sensitive adhesive sheet is one that has a base, an intermediate layer and a pressure-sensitive adhesive layer in order, wherein the intermediate layer has an elastic modulus at elongation at 23° C. ... 03/15/07 - 20070059902 - Method for manufacturing semiconductor device A method for manufacturing a semiconductor device is disclosed, in which a laser marking is formed on a rear surface of a wafer to prevent a Cu layer from being peeled by a protrusion of the laser marking. The method includes forming a laser marking on a rear surface of ... 03/08/07 - 20070054470 - Method for thinning substrate and method for manufacturing circuit device The supporting plate 1 and the substrate W are joined by using an adhesive layer 2, and a sheet 6 is attached to the supporting plate 1. The surface of the supporting plate 1 to which the sheet 6 has been attached is mounted and fixed by attraction onto an ... 03/08/07 - 20070054469 - Pressure-sensitive adhesive sheet and method of processing articles To provide a pressure-sensitive adhesive sheet, which is used in processing an article such as a semiconductor wafer, the pressure-sensitive adhesive sheet has a base, an intermediate layer and a pressure-sensitive adhesive layer in this order, wherein the intermediate layer has an elastic modulus in tension at 23° C. of ... 03/08/07 - 20070054468 - Method for producing silicon epitaxial wafer For a silicon single crystal substrate PW to which boron, arsenic or phosphorus is added as a dopant in a concentration of 1×1019/cm3 or more and in which a CVD oxide film 1 is formed on a rear surface, wet etching of an oxide film on a main surface of ... 03/01/07 - 20070048971 - Laminated substrate manufacturing method and laminated substrate manufactured by the method Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an ... 02/22/07 - 20070042567 - Process for producing silicon wafer A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching ... 02/15/07 - 20070037363 - Method for forming a brittle zone in a substrate by co-implantation The invention concerns a method for making a thin film, which consists in creating a brittle zone embedded by implantation of a chemical species in a substrate, so as to be able subsequently to provoke a fracture of the substrate along said brittle zone to separate therefrom said thin film. ... 02/08/07 - 20070032044 - Method and structure for fabricating devices using one or more films provided by a layer transfer process and etch back A method for fabricating one or more devices using semiconductor substrate with a cleave region. The method includes providing a substrate. In a preferred embodiment, the substrate has a thickness of semiconductor material and a surface region. In a specific embodiment, the substrate also has a cleave plane (including a ... 02/08/07 - 20070032043 - Soi wafer and its manufacturing method Since a supporting wafer contains boron of 9×1018 atoms/cm3 or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamination in the active ... 02/01/07 - 20070026639 - Manufacturing method of semiconductor device A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back ... 02/01/07 - 20070026638 - Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface ... 02/01/07 - 20070026637 - Soi wafer and its manufacturing method Since a supporting wafer contains nitrogen of 1×1014 atmos/cm3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13×1017 atoms/cm3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer can be captured by the BMD and the OSF in ... 01/25/07 - 20070020888 - Semiconductor device and method of manufacturing the same A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to ... 01/25/07 - 20070020887 - Processing method and grinding apparatus of wafer To facilitate handling of a wafer in processing or carrying after the wafer being reduced in thickness by grinding, the whole back of a wafer having a surface on which a device region having a plurality of devices formed therein and a peripheral surplus region enclosing the device region are ... 01/11/07 - 20070010068 - Methods of manufacturing a semiconductor device Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor ... 01/04/07 - 20070004173 - Semiconductor wafers including one or more reinforcement structures and methods of forming the same Methods of forming semiconductor devices include thinning a region of a semiconductor wafer and forming at least one semiconductor die laterally within a thinned region of the wafer. One or more reinforcement structures may be defined on the wafer. Semiconductor wafers include one or more reinforcement structures that extend laterally ... 12/28/06 - 20060292826 - Wafer processing method A method of processing a wafer having a device area where a plurality of devices are formed on the front surface and an extra area surrounding the device area and comprising electrodes which are formed in the device area, comprising: a reinforcement forming step for removing an area, which corresponds ... 12/28/06 - 20060292825 - Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material The aim of the invention is to create a simple monitoring or testing method for monitoring a reduction in thickness as material is removed from a bonded semiconductor wafer pair, which prevents failure effects as material is removed from wafers (polishing, grinding or lapping). In addition, the costs of the ... 12/14/06 - 20060281281 - Method of inspecting semiconductor wafer A method of inspecting a semiconductor wafer, comprises removing a device structure film on the semiconductor wafer with a chemical solution to expose a crystal surface of the semiconductor wafer; coating a protected area, which is a part of the crystal surface of the semiconductor wafer, with a mask material ... 12/07/06 - 20060276008 - Thinning A method for thinning a wafer layer to a predetermined thickness comprises two phases of thinning. A first thinning phase and a second thinning phase, wherein the first thinning phase is a preparatory thinning phase and the second thinning phase is a final thinning phase, so performed that the structure ... 11/30/06 - 20060270193 - Semiconductor substrate, method for fabricating the same, and method for fabricating semiconductor device In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 ... 11/30/06 - 20060270192 - Semiconductor substrate and device with deuterated buried layer A method and structure for forming an SOI substrate and integrated circuit built on the SOI substrate contain deuterium in the buried insulator layer of the substrate. Deuterium in the buried insulator layer acts as a reservoir to supply deuterium in the entire device manufacturing process. It is in a ... 11/23/06 - 20060264005 - Silicon substrate processing method for observing defects in semiconductor devices and defect-detecting method A silicon substrate processing method for reducing the thickness of an area of a silicon substrate on which a metal layer is formed to implement a semiconductor integrated circuit is disclosed. The method includes: (A) a process which evenly reduces the thickness of the backside of a silicon substrate to ... 11/09/06 - 20060252231 - High temperature and chemical resistant process for wafer thinning and backside processing A process which uses a silicone resin to form a wafer-to-carrier bonded package that enables wafer thinning and backside processing while the cured resin exhibits high chemical and thermal resistance. The process is versatile in that the constructed wafer package allows for a wide range of chemical exposures to include ... 11/02/06 - 20060246689 - Soi wafer and process for producing the same The present invention provides an SOI wafer having at least an SOI layer, in which a plain orientation of the SOI layer is off-angled from {110} only in a direction to <100>, and an off-angle is from 5 minutes to 2 degrees, and a method of producing an SOI wafer ... 08/31/06 - 20060194415 - Germanium infrared sensor for cmos imagers A method of fabricating a germanium infrared sensor for a CMOS imager includes preparation a donor wafer, including: ion implantation into a silicon wafer to form a P+ silicon layer; growing an epitaxial germanium layer on the P+ silicon layer, forming a silicon-germanium interface; cyclic annealing; and implanting hydrogen ions ... 08/17/06 - 20060183297 - Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an ... 08/03/06 - 20060172508 - Process for transfer of a thin layer formed in a substrate with vacancy clusters Processes for forming semiconductor structure comprising a transfer layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor on insulator (“SeOI”) structure can be formed using a donor substrate, a support substrate ... 07/27/06 - 20060166463 - Method of producing a device with a movable portion A method of producing a device with a movable portion spaced apart from a support wafer comprises a step of providing the support wafer having a structured surface and a further step of providing a device wafer with a backing layer and a device layer disposed thereon. Further, the method ... 07/27/06 - 20060166462 - Method for manufacturing semiconductor wafer A method may involve mounting a first supporting plate on an active surface of a wafer using an adhesive. A portion of the back surface of the wafer may be backlapped. A second supporting plate may be mounted on the back surface of the wafer using an adhesive. The first ... 07/13/06 - 20060154446 - Method for fabricating semiconductor component with thnned substrate having pin contacts A semiconductor component includes back side pin contacts fabricated using a circuit side fabrication method. The component also includes a thinned semiconductor die having a pattern of die contacts, and conductive members formed by filled openings in the die contacts and the die. In addition, the pin contacts are formed ... 06/08/06 - 20060121696 - Method for manufacturing soi wafer This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the insulating film in the front surface of the active layer wafer; a step of subjecting the active ... 06/01/06 - 20060115961 - Method of producing a thin layer of semiconductor material a separation step of separating the thin layer (6) from the rest (7) of the wafer. ... 05/18/06 - 20060105543 - Cmos-mems process A fully CMOS compatible MEMS multi-project wafer process comprises coating a layer of thick photoresist on a wafer surface, patterning the photoresist to define a micromachining region, and performing a micromachining in the micromachining region to form suspended microstructures. ... 04/13/06 - 20060079071 - Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps: a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face, b) ... 03/30/06 - 20060068566 - Film sticking method and film sticking device There is provided a film sticking method for sticking a film on a pattern forming face of a wafer, on the pattern forming face (21) of which a circuit pattern (C) is formed, comprising the steps of: positioning the wafer (20) so that a sticking direction of a film sticking ... 03/23/06 - 20060063356 - Soi structure having a sige layer interposed between the silicon and the insulator A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over ... 03/23/06 - 20060063355 - Method and device for forming spacer structures for packaging optical reflection devices A method for forming a patterned silicon bearing material, e.g., silicon substrate. The method includes providing a silicon substrate, which has a surface region and a backside region. The method includes forming a plurality of recessed regions on the surface region. Each of the plurality of recessed regions has a ... 03/23/06 - 20060063354 - Microelectromechanical system pressure sensor and method for making and using According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite ... 03/16/06 - 20060057821 - Low temperature methods of etching semiconductor substrates Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, ... 03/09/06 - 20060051937 - Method for producing semiconductor chips using thin film technology, and semiconductor chip using thin film technology For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact ... 03/09/06 - 20060051936 - Mask and production method therefor and production for semiconductor device A highly durable mask with sufficient strength against ion implantation, a method of producing the same, and a method of producing a semiconductor device using the mask are provided. A mask comprising a thin film, a protective film preferably composed of a photosensitive resin formed on a part of the ... 03/02/06 - 20060046433 - Thinning semiconductor wafers Wafer thinning may be accomplished by grinding while the wafer is held in the fixture. The fixture may have a series of protrusions that form an interference fit with surface features extending outwardly from the non-thinned surface of the wafer to be thinned. In some embodiments, a releasable adhesive may ... 02/23/06 - 20060040471 - Method of forming vias on a wafer stack using laser ablation Disclosed are various embodiments of a method of forming vias for backside connections in a wafer stack, wherein the vias are formed by non-thermal laser ablation. Other embodiments are described an claimed. ... 02/16/06 - 20060035442 - Layer arrangement and process for producing a layer arrangement In a process for producing a layer arrangement, a first layer is formed with a thickness on a first side of a substrate, which thickness is greater than a minimum thickness for epitaxial growth, a second layer is epitaxially grown on the first layer, and a third layer is formed ... 02/16/06 - 20060035441 - Method for processing a thin semiconductor substrate A method for processing a semiconductor substrate less than 200 μm thick has been provided. The substrate has one or a plurality of semiconductor elements, which may be identical or different. The substrate is arranged onto a chuck during processing, the front side of the substrate facing the chuck. During ... 02/09/06 - 20060030124 - Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a ... 01/05/06 - 20060003550 - Method for ultra thinning bumped wafers for flip chip In an improved method for bumped wafer thinning, a wafer is provided having a front side and a back side wherein contact pads are formed on the top surface. A dry film is formed on the front side of the wafer and openings are provided in the dry film to ... 12/29/05 - 20050287767 - Semiconductor substrate and process for producing it d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF ... 12/29/05 - 20050287766 - Wafer-level diamond spreader An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of ... 12/22/05 - 20050282359 - Wafer processing method A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer on the side of the back ... 12/22/05 - 20050282358 - Method for transferring an electrically active thin layer A method for transferring an electrically active thin film from an initial substrate to a target substrate including: ion implantation through one face of the initial substrate to create a buried, embrittled film at a determined depth relative to the implanted face of the initial substrate, thus delimiting a thin ... 12/08/05 - 20050272223 - Method for dicing substrate A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within ... 12/01/05 - 20050266659 - Methods for transferring a useful layer of silicon carbide to a receiving substrate Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the invention relates to a method for recycling of a silicon carbide source substrate by removal of the excess zone followed by a finishing step to prepare the source substrate for recycling ... 10/20/05 - 20050233548 - Method for fabricating semiconductor wafer A supporting substrate (10) having a flat supporting face is integrated with a semiconductor wafer W while supporting the surface thereof on the supporting face of the supporting substrate (10). The semiconductor wafer W integrated with the supporting substrate (10) is polished or etched on the back thereof using a ... 10/20/05 - 20050233547 - Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body Provided is a laminated body (1) comprising a substrate (2) to be ground and a support (5), where the substrate (2) is ground to a very small thickness and can then be separated from the support (5) without damaging the substrate (2). One embodiment of the present invention is a ... 09/29/05 - 20050215031 - Photo-semiconductor device and method of manufacturing the same A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and ... 09/22/05 - 20050208734 - Thin flip-chip method Methods for thinning a bumped semiconductor wafer, as well as methods for producing flip-chips of very thin profiles, are disclosed. According to the methods of the present invention, a mold compound is interspersed between conductive bumps on the active face of a wafer to provide support and protection for the ... 08/25/05 - 20050186759 - Manufacturing of monolithically integrated pin structures Fabrication techniques for fabricating p-i-n structures that achieve a thin intrinsic layer and a small resistance across the p-i-n structure and thus a high response speed in a monolithically integrated circuit package. Germanium p-i-n structures may be fabricated over silicon or silicon-on-insulator substrates using silicon processing technologies. ... 08/18/05 - 20050181580 - Method for manufacturing mesa semiconductor device A semiconductor element is formed by forming at least one p-n junction on a semiconductor wafer (1), a recess (8) is formed around the semiconductor element by etching, an insulating film (5) is formed on a surface of the recess, and a metal film (6a) is deposited, by sputtering or ... 08/11/05 - 20050176216 - Ultra low dielectric constant thin film A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of ... 08/04/05 - 20050170612 - Substrate attaching method A method for attaching a substrate such as a semiconductor wafer in which cracking or chipping can be prevented when the substrate is thinned involves applying adhesive liquid onto a circuit (element)-formed surface of a semiconductor wafer. The adhesive liquid undergoes preliminary drying, so that its flowability is reduced and ... 07/07/05 - 20050148157 - Backside unlayering of mosfet devices for electrical and physical characterization A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor ... 06/23/05 - 20050136621 - Method for reducing harmonic distortion in comb drive devices Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch-buffers, liberating and removing one or more sacrificial etch-buffers prior to ... 06/09/05 - 20050124138 - Method for handling semiconductor layers in such a way as to thin same b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E0 between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum ... 06/02/05 - 20050118789 - Method of producing soi wafer and soi wafer The present invention relates to a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by forming an oxide film on a surface of at least one of a bond wafer and a base wafer, bonding the bond wafer to the ... ### FreshPatents.com Support |