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Semiconductor Device Manufacturing: Process > Bonding Of Plural Semiconductor Substrates > Subsequent Separation Into Plural Bodies (e.g., Delaminating, Dicing, Etc.) Subsequent Separation Into Plural Bodies (e.g., Delaminating, Dicing, Etc.)Subsequent Separation Into Plural Bodies (e.g., Delaminating, Dicing, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087531 - Method and apparatus for flag-less water bonding tool Embodiments in accordance with the present invention relate to methods and apparatuses for bonding together substrates in a manner that suppresses the formation of voids between them. In a specific embodiment, a backside of each substrate is adhered to a front area of flexible, porous chuck having a rear area ... 04/19/07 - 20070087530 - Detection of seed layers on a semiconductor device A device and/or method which detects a seed layer and a device and/or method of forming layers on a semiconductor device. The device which forms layers on the semiconductor device may include a metal layer forming unit (which forms a metal layer on a wafer), a copper seed layer forming ... 04/12/07 - 20070082464 - Apparatus for block assembly process Apparatuses and methods for improved fluidic self assembly (FSA). An apparatus performing an improved FSA method can include one or more of a block deposition and clearing section, a drying section, a lamination section and an inspection section. In a specific embodiment, each of these sections are connected in series ... 04/12/07 - 20070082463 - Semiconductor device with semiconductor chip and adhesive film and method for producing the same A semiconductor device includes a semiconductor chip and an adhesive film between the back side of the semiconductor chip and a chip pad of a leadframe. The adhesive film includes a film core and adhesive layers that cover both sides of the film core. The film core includes a brittle, ... 04/12/07 - 20070082462 - Wafer having indicator for first die and method of attaching die of the wafer Provided are a wafer having an indicator for a first die and a method of attaching a die of the wafer. The wafer includes an indicator formed on a back surface at a position corresponding to a position of a first die on a front surface, for indicating the position ... 04/05/07 - 20070077731 - Processing method of wafer A separation groove having a depth corresponding to a finished thickness of a semiconductor chip is formed in a boundary between a device region and an outer peripheral surplus region of a wafer, a protection tape whose adhesion is deteriorated by irradiation of ultraviolet rays is adhered on a surface, ... 03/08/07 - 20070054467 - Methods for integrating lattice-mismatched semiconductor structure on insulators Monolithic lattice-mismatched semiconductor heterostructures are fabricated by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly-defective interface areas along with the underlying substrates to produce alternative active-area regions disposed over the insulator and substantially exhausted of misfit and threading dislocations. ... 02/22/07 - 20070042566 - Strained silicon on insulator (ssoi) structure with improved crystallinity in the strained silicon layer This invention generally relates to strained silicon on insulator (SSOI) structure, and to a process for making the same. The process includes a high temperature thermal anneal of a SSOI structure to improve the crystallinity of the strained silicon layer, while maintaining the strain present therein. ... 02/08/07 - 20070032042 - Peeling method A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high ... 01/25/07 - 20070020886 - Method for reducing the trap density in a semiconductor wafer The invention provides methods for reducing trap densities at interfaces in a multilayer semiconductor wafer, specifically trap densities between an active layer and an insulating layer under the active layer. The methods comprise exposing wafers to high temperatures in a generally neutral atmosphere that also comprises one or more species ... 01/18/07 - 20070015342 - Fabrication method of semiconductor circuit device When a semiconductor wafer is formed to be thin, steps need to be taken to prevent warping of the wafer. For this purpose, a protective tape is affixed to a surface of the semiconductor wafer, and a back side of the semiconductor wafer is then ground to a predetermined thickness. ... 01/04/07 - 20070004172 - Method of thinning a wafer A method of thinning a wafer. A wafer having a front surface and a back surface is provided. Subsequently, a carrier wafer is provided, and the back surface of the wafer is bonded to the carrier wafer with a bonding medium. Following that, a wafer thinning process is performed to ... 12/21/06 - 20060286771 - Layer transfer technique A layer transfer technique in which a portion of a donor wafer is doped with positively charged hydrogen ions and positively charged helium ions before it is bonded to a portion of a handle wafer. Furthermore, the bonded wafers are annealed at one of two annealing temperatures, which determines whether ... 12/21/06 - 20060286770 - Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; ... 12/21/06 - 20060286769 - Wafer demounting method, wafer demounting device, and wafer demounting and transferring machine It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the ... 11/30/06 - 20060270191 - Manufacturing method of semiconductor device An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device ... 11/30/06 - 20060270190 - Method of transferring a thin crystalline semiconductor layer A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves deposition of a doped semiconductor layer on a substrate and epitaxial growth of a thin, monocrystalline, semiconductor layer on the doped layer. After bonding the thin epitaxial monocrystalline semiconductor layer to a second ... 11/02/06 - 20060246688 - Semiconductor film manufacturing method and substrate manufacturing method This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming ... 11/02/06 - 20060246687 - Method for producing a semiconductor component A method for producing a semiconductor component, in which a semiconductor layer (2) is separated from a substrate (1) by irradiation with laser pulses (6), the pulse duration of the laser pulses (6) being less than or equal to 10 ns. The laser pulses (6) have a spatial beam profile ... 10/19/06 - 20060234474 - Method of transferring a thin crystalline semiconductor layer A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within ... 10/12/06 - 20060228870 - Method of making group iii-v nitride-based semiconductor crystal A method of making a group III-V nitride-based semiconductor crystal has: a first step of providing a first semiconductor crystal substrate; a second step of growing a first group III-V nitride-based semiconductor crystal on the first semiconductor crystal substrate in a first crystal axis direction until when reaching a first ... 10/12/06 - 20060228869 - Mems packaging structure and methods A MEMS article is made by forming a MEMS device on a first substrate, providing a second substrate, depositing a layer of etchable dielectric material, forming at least one lateral post-bond release-etch port by a damascene process using a sacrificial material, and bonding the two substrates together. ... 10/05/06 - 20060223283 - Method for producing a high quality useful layer on a substrate A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. ... 10/05/06 - 20060223282 - Processes for forming backplanes for electro-optic displays A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second ... 10/05/06 - 20060223281 - Manufacturing structure This utility discloses a manufacturing structure, suitable for at least one component that accomplishes manufacturing structure with high density and high suppleness. This structure comprises a substrate and at least one hole. These holes are arranged to be an array on the substrate. The size of the hole tallies with ... 09/28/06 - 20060216910 - Active organic semiconductor devices and methods for making the same Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate ... 09/21/06 - 20060211219 - Substrate stiffness method and resulting devices for layer transfer process A method and structures for manufacturing multi-layered substrates. The method includes providing a donor substrate, which has a first deflection characteristic. The donor substrate has a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face. The method includes bonding the ... 09/14/06 - 20060205181 - Method for forming an optical silicon layer on a support and use of said method in the production of optical components a) molecular bonding of a silicon block (20a) on the support, the silicon block having a surface layer (22a) delimited by a cleavage area, b) cleavage of the silicon block along the cleavage area to detach the surface layer from it, c) adjustment of the thickness of the said surface ... 09/14/06 - 20060205180 - Applications and equipment of substrate stiffness method and resulting devices for layer transfer processes on quartz or glass A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young's modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline ... 09/14/06 - 20060205179 - Method for making a stressed structure designed to be dissociated The invention concerns a method of making a complex microelectronic structure by assembling two substrates through two respective linking surfaces, the structure being designed to be dissociated at a separation zone. The invention is characterized in that is consists, prior to assembly, in producing a state difference in the tangential ... 08/24/06 - 20060189097 - Method for manufacturing semiconductor device The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A ... 08/24/06 - 20060189096 - Creation of high mobility channels in thin-body soi devices A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a ... 08/24/06 - 20060189095 - Semiconductor substrates having useful and transfer layers Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful ... 08/10/06 - 20060177994 - Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices Embodiments of the invention use silicon on porous silicon wafers to produce a reduced-thickness IC device wafers. After device manufacturing, a temporary support is bonded to the device layer. The uppermost silicon layer is then separated from the silicon substrate by splitting the porous silicon layer. The porous silicon layer ... 08/10/06 - 20060177993 - Method for manufacturing soi substrate The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an ... 08/10/06 - 20060177992 - Backside coating for mems wafer A transparent substrate has a micro electromechanical system (MEMS) on a first side of the substrate. An opaque layer is formed on a second side of the transparent substrate opposite the first side. The opaque layer comprises a first material that is removable by a MEMS release process. A second ... 07/13/06 - 20060154445 - Method for manufacturing soi wafer The present invention provides a method for manufacturing an SOI wafer with high productivity in which generation of voids is suppressed in manufacturing the SOI wafer. The present invention comprises the steps of: forming an insulating layer on at least one wafer of two starting wafers; and adhering the one ... 07/06/06 - 20060148209 - Methods for manufacturing porous dielectric substrates including patterned electrodes A method for manufacturing a porous dielectric substrate including patterned electrodes includes a patterned electrode-forming step of preparing a support plate having a releasable flat face and then forming the patterned electrodes on the flat face, a porous dielectric substrate-forming step of feeding a material for forming the porous dielectric ... 07/06/06 - 20060148208 - Method for producing a silicon-on-insulator structure The inventive method for producing a silicon-on insulator structure consists in implanting hydrogen is a silicon plate (1), chemically treating said silicon plate (1) and a substrate (3), in connecting and grafting the silicon plate (1) and the substrate (3) and in layering along the implanted layer (2) of the ... 06/22/06 - 20060134883 - Systems and methods for electrical contacts to arrays of vertically aligned nanorods Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the ... 06/15/06 - 20060128118 - Nitride semiconductor device comprising bonded substrate and fabrication method of the same A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are ... 06/08/06 - 20060121695 - Method for manufacturing semiconductor thin film A substrate with a second semiconductor layer and a second mask film formed thereon is subjected to a heat treatment in an oxidizing atmosphere. Thus, second oxidized regions are formed through oxidization of the second semiconductor layer in regions of the second semiconductor layer that are not covered by the ... 06/08/06 - 20060121694 - Manufacturing method of semiconductor device A manufacturing method of a semiconductor device at low cost with high reliability, wherein a semiconductor device is manufactured by peeling an element forming layer having a thin film transistor and the like provided over a substrate from the substrate. A metal film is formed on a substrate, plasma treatment ... 06/08/06 - 20060121693 - Method and device for wafer scale packaging of optical devices using a scribe and break process A multilayered integrated optical and circuit device. The device has a first substrate comprising at least one integrated circuit chip thereon, which has a cell region and a peripheral region. Preferably, the peripheral region has a bonding pad region, which has one or more bonding pads and an antistiction region ... 06/01/06 - 20060115960 - Method of forming component interface in semiconductor or mems manufacture A method of forming component interface in semiconductor or MEMS manufacture is by way of a bad adhesion material or manufacture, or an easy etching and removable material, to form an easily removed component interface in the middle between a manufactured substrate and a layer of semiconductor circuit or MEMS ... 06/01/06 - 20060115959 - Flexible mems thin film without manufactured substrate and process for producing the same A process for producing flexible MEMS thin film without a manufactured substrate applied in a MEMS manufacture specially includes a method of forming a component interface in the middle between a manufactured substrate and a MEMS thin film formed on the manufactured substrate as a basis, which component interface is ... 05/04/06 - 20060094207 - Method of fabricating vertical devices using a metal support film A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive ... 04/27/06 - 20060088979 - Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same A method for fabricating a semiconductor structure having a high-strained crystalline layer with a low crystal defect density is disclosed. The structure includes a substrate having a first material comprising germanium or a Group(III)-Group(V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and ... 04/13/06 - 20060079070 - Substrate for stressed systems and method of making same A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. ... 04/06/06 - 20060073675 - Semiconductor device and method of manufacturing thereof A method of manufacturing a semiconductor device, comprises; fixing a plurality of semiconductor substrates to a surface of a wiring substrate in which a perforated line, a grooved portion or grooved portion like the a perforated line is formed in advance; splitting the wiring substrate into a plurality of pieces ... 04/06/06 - 20060073674 - Strained gettering layers for semiconductor processes A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering layer. Additionally, the donor wafer may possess a ... 03/30/06 - 20060068565 - System and method for hydrogen exfoliation A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming ... 03/16/06 - 20060057820 - Method and apparatus for producing ultra-thin semiconductor chip and method and apparatus for producing ultra-thin back-illuminated solid-state image pickup device A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method ... 03/16/06 - 20060057819 - Electronic part producing method and electronic part A conductor portion is formed on the surface of a support member. After the conductor portion is formed, a copper foil on which resin is attached is moved downward from above the conductor portion to pressurize the conductor portion while covering it. the copper foil with the resin is pressed ... 03/09/06 - 20060051935 - Method of separating mems devices from a composite structure A method of separating MEMS devices from a structure having a substrate, a sacrificial layer positioned on a front side of the substrate and a plurality of MEMS devices embedded in the sacrificial layer includes the step of securing a front handle wafer to the sacrificial layer. The substrate is ... 03/02/06 - 20060046432 - Method of forming through-wafer interconnects for vertical wafer level packaging A wafer is provided having through-holes therein to form a through-hole via wafer. A substrate of a sacrificial wafer is provided. The substrate is coated with a polymer having low adhesion to metals. A conductive layer is deposited on the polymer. A photoresist layer is coated on the conductive layer. ... 02/23/06 - 20060040470 - Methods for minimizing defects when transferring a semiconductor useful layer A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a ... 02/23/06 - 20060040469 - Soi wafer manufacturing method In order to adjust thickness of a bonded silicon single crystal film 15 depending of thickness of an SOI layer 5 to be obtained, depth of formation d1+tx of a separatory ion implanted layer 4, measured from a first main surface J, in the separatory ion implanted layer formation step ... 02/16/06 - 20060035440 - Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. ... 02/16/06 - 20060035439 - Method of forming a micromechanical structure A method of forming a micromechanical structure, wherein at least one micromechanical structural layer is provided above a substrate. The micromechanical structural layer is sustained between a lower sacrificial silicon layer and an upper sacrificial silicon layer, wherein a metal silicide layer is formed between the lower and upper sacrificial ... 01/26/06 - 20060019466 - Germanium substrate-type materials and approach therefor Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to ... 01/26/06 - 20060019465 - Method and system for dopant containment According to one embodiment, a semiconductor device is provided. The semiconductor device includes an oxide layer. The semiconductor device also includes a silicon layer disposed outwardly from the oxide layer and having at least one region comprising a dopant. The semiconductor device also includes a dielectric layer disposed outwardly from ... 01/26/06 - 20060019464 - Method of fabricating silicon on glass via layer transfer A method of fabricating a silicon-on-glass layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; relaxing the SiGe layer; depositing a layer of silicon on the relaxed SiGe layer; implanting hydrogen ions in a second hydrogen implantation step to facilitate splitting of the wafer; bonding ... 12/22/05 - 20050282357 - Method of peeling off and method of manufacturing semiconductor device The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to ... 12/22/05 - 20050282356 - Semiconductor layer structure and method of making the same A method of forming a circuit includes providing a first substrate; positioning an interconnect region on a surface of the first substrate; providing a second substrate; positioning a device structure on a surface of the second substrate, the device structure including a stack of at least three doped semiconductor material ... 12/15/05 - 20050277269 - Method of manufacturing a material compound wafer The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate to form an assembly; heating the assembly for weakening the predetermined splitting area; and determining a degree of weakening of ... 12/08/05 - 20050272222 - Method for the manufacture of electronic devices on substrates and devices related thereto Methods for manufacturing electronic devices and devices produced by those methods are disclosed. One such method includes releasably bonding a first surface of a device substrate to a face of a first carrier substrate using a first bonding agent to produce a first composite substrate, where the face of the ... 11/10/05 - 20050250294 - Method for forming a relaxed or pseudo-relaxed useful layer on a substrate A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity ... 11/03/05 - 20050245049 - Atomic implantation and thermal treatment of a semiconductor layer Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer ... 10/20/05 - 20050233546 - Method of transferring devices, method of arranging devices using the same, and method of manufacturing an image display system A first adhesive layer is provided on a base substrate, and multiple devices are arranged on the first adhesive layer. The first adhesive layer is irradiated with laser light from the back side of the base substrate, only at positions corresponding to the devices to be transferred, by use of ... 10/20/05 - 20050233545 - Method and system for lattice space engineering A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. ... 10/13/05 - 20050227455 - Method of separating layers of material A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on the substrate and a homogeneous ... 10/06/05 - 20050221584 - Wafer processing method A wafer processing method capable of easily handling even a thinly formed wafer during the processing thereof is provided. An annular protective member is bonded to an outer circumferential excess region out of an outer surface of the wafer, on which devices are not formed, and a rear surface is ... 10/06/05 - 20050221583 - Method for making thin layers containing microcomponents The invention concerns a method for making thin layers containing microcomponents using a substrate. The method includes the following steps: a) provides a substrate; b) local implantation of at least a gaseous species in said substrate perpendicular to a plurality of implantation zones defined on the surface of the substrate, ... 09/29/05 - 20050215030 - Method and device for separating a reinforcing-plate fixed to a reinforced semiconductor wafer A reinforcing-plate fixed to a reinforced semiconductor wafer is separated from the wafer which includes a semiconductor wafer, a double-side adhesive sheet having, on at least one surface thereof, a peelable adhesive layer stuck to a front face of the semiconductor wafer, and the reinforcing-plate fixed to the other adhesive ... 09/01/05 - 20050191825 - Methods for transferring a thin layer from a wafer having a buffer layer A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer ... 08/25/05 - 20050186758 - Controlled cleaving process A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define ... 08/04/05 - 20050170611 - Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties ... 07/28/05 - 20050164471 - Method for producing thin layers of semiconductor material from a donor wafer A method for producing thin layers of a semiconductor material from a donor wafer, which comprises in succession forming a first weakened region in a donor wafer below a first face and at a depth corresponding substantially to the thickness of a first thin layer to be transferred, detaching the ... 07/14/05 - 20050153524 - Strained silicon on insulator from film transfer and relaxation by hydrogen implantation Transistors fabricated on SSOI (Strained Silicon On Insulator) substrate, which comprises a strained silicon layer disposed directly on an insulator layer, have enhanced device performance due to the strain-induced band modification of the strained silicon device channel and the limited silicon volume because of the insulator layer. The present invention ... 06/16/05 - 20050130391 - Method for manufacturing semiconductor device A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, ... 06/16/05 - 20050130390 - Semiconductor substrate assemblies and methods for preparing and dicing the same A method for forming semiconductor devices using a semiconductor substrate having first and second opposed surfaces and including first and second device regions includes directing a beam of laser light at the substrate such that the beam of laser light is focused within the substrate between the first and second ... ### FreshPatents.com Support |