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Semiconductor Device Manufacturing: Process > Bonding Of Plural Semiconductor Substrates Bonding Of Plural Semiconductor SubstratesBonding Of Plural Semiconductor Substrates patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.04/19/07 - 20070087528 - Method and structure for vertically-stacked device contact Method and structure for vertically stacking microelectronic devices are disclosed. Subsequent to appropriate deposition, patterning, trenching, and passivation subprocesses, a conductive layer is formed wherein one end comprises an external contact portion for C4 interfacing, and another end establishes electrical contact with an internal contact at the bonding interface between ... 04/19/07 - 20070087527 - Method and device for bonding wafers The invention relates to a method and a device (1) for bonding wafers (6, 9). Here at least one wafer surface is first wetted with a molecular dipolar compound, whereupon the wafers are brought into contact with each other. The bonding of the wafers then takes place by means of ... 04/19/07 - 20070087526 - Method of recycling an epitaxied donor wafer A method for forming a semiconductor structure comprising a thin layer of semiconductor material on a receiver wafer is disclosed. The method comprises removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the ... 04/12/07 - 20070082461 - Method of forming a recessed structure employing a reverse tone process The present invention provides a method of forming recesses on a substrate, the method including forming on the substrate a patterning layer having first features; trim etching the first features to define trimmed features having a shape; and transferring an inverse of the shape into the substrate. ... 04/12/07 - 20070082460 - Wafer processing method and wafer processing apparatus A method of processing a wafer includes a masking process for providing a mask on a surface of a film-formed wafer except for a wafer peripheral portion, and polishing process for spraying a processing liquid containing an inorganic material onto the wafer peripheral portion. According to the method of processing ... 04/12/07 - 20070082459 - Probes, methods of making probes and applications of probes Provided herein are methods and apparatuses for analog molecules, particularly polymers, and molecular complexes with extended confirmations. In particular, the methods and apparatuses are used to identify sequence information in molecules or molecular ensembles which is subsequently used to determine structural information about the molecules. Further, provided herein are various ... 04/05/07 - 20070077730 - Method and device for extracting an electronic chip from a silicon wafer and transporting the chip to its installation location on an electronic device Transferring the chips (20) from the roll-up film (28) directly and continuously on contacts (46, 48 or 58, 60) of the electronic device. ... 04/05/07 - 20070077729 - Method of fabricating a release substrate The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer ... 04/05/07 - 20070077728 - Adhesive system for supporting thin silicon wafer In some embodiments, an adhesive system for supporting thin silicon wafer is presented. In this regard, a method is introduced to bond a silicon wafer to a translucent carrier through the use of an adhesive. Other embodiments are also disclosed and claimed. ... 03/29/07 - 20070072392 - Method of cleaning cover glass having spacer The present invention provides a method of cleaning a cover glass having a spacer which is to be incorporated in a solid image pickup device, comprising: a dry cleaning step performed after dry etching; a wipe-off cleaning step performed after the dry cleaning step; a primary wet cleaning step performed ... 03/29/07 - 20070072391 - Method of sealing two plates with the formation of an ohmic contact therebetween a step for implantation of metallic species (4) in at least the first wafer, a step for assembly of the first and second wafer, an annealing step. ... 03/15/07 - 20070059901 - Metal and electronically conductive polymer transfer The invention relates to a donor laminate comprising in order, a substrate, an electronically conductive polymer layer in contact with said substrate, and a metal layer. ... 03/08/07 - 20070054466 - Semiconductor-on-insulator type heterostructure and method of fabrication The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of semiconductor material and an active layer derived from a donor substrate of semiconductor material. The method includes the steps of bonding and active layer transfer. ... 03/08/07 - 20070054465 - Lattice-mismatched semiconductor structures on insulators Monolithic lattice-mismatched semiconductor heterostructures are fabricated by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly-defective interface areas along with the underlying substrates to produce alternative active-area regions disposed over the insulator and substantially exhausted of misfit and threading dislocations. ... 03/01/07 - 20070048970 - Semiconductor device and manufacturing method thereof It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming ... 03/01/07 - 20070048969 - Stacked chip package using photosensitive polymer and manufacturing method thereof In a stacked chip configuration, and manufacturing methods thereof, the gap between a lower and an upper chip is filled completely using a relatively simple process that eliminates voids between the lower and upper chips and the cracking and delamination problems associated with such voids. The present invention is applicable ... 03/01/07 - 20070048968 - Semiconductor on glass insulator with deposited barrier layer Methods and apparatus provide for: a silicon on insulator structure, comprising: a glass substrate; a layer of semiconductor material; and a deposited barrier layer of between about 60 nm to about 600 nm disposed between the glass substrate and the semiconductor material, where the glass substrate and semiconductor material are ... 02/15/07 - 20070037362 - Method and apparatus for integrating iii-v semiconductor devices into silicon processes Method and apparatus for fabricating semiconductor devices, for example, III-V semiconductor devices, having a desired substrate, for example, a silicon substrate. A method for fabricating semiconductor devices includes providing a semiconductor wafer that includes a plurality of semiconductor structures attached to a native substrate formed of a first substrate material, ... 02/08/07 - 20070032041 - Gallium nitride device substrate containing a lattice parameter altering element A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate. ... 02/08/07 - 20070032040 - Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses The present invention provides a method of manufacturing a multilayer semiconductor structure featuring reduced ohmic losses with respect to standard multilayer semiconductor structures. The semiconductor structure comprises a high resistivity silicon substrate with resistivity higher than 3 KΩ.cm, an active semiconductor layer and an insulating layer in between the silicon ... 01/25/07 - 20070020885 - Tube formed of bonded silicon staves Tubular silicon members advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. A silicon-based wafer support tower is particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces ... 01/25/07 - 20070020884 - Semiconductor structures formed on substrates and methods of manufacturing the same Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the ... 01/25/07 - 20070020883 - Patterned structures fabricated by printing mask over lift-off pattern A patterned integrated circuit structure defining a gap or via is fabricated solely by digital printing and bulk processing. A sacrificial lift-off pattern is printed or otherwise formed over a substrate, and then covered by a blanket layer. A mask is then formed, e.g., by printing a wax pattern that ... 01/11/07 - 20070010067 - Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring the transferred layer to the transfer member and reusing the substrate for another transfer. ... 01/04/07 - 20070004171 - Method of supporting microelectronic wafer during backside processing using carrier having radiation absorbing film thereon A method of supporting a microelectronic wafer during backside processing. The method comprises: selecting a rigid carrier including a radiation absorbing film thereon, an adhesive, and a radiation source to emit radiation at a predetermined wavelength range; forming a wafer-carrier stack by providing the adhesive between the wafer and the ... 12/28/06 - 20060292824 - Methods for bonding and micro-electronic devices produced according to such methods One inventive aspect is related to a method of bonding two elements. The method comprises producing on a first element a first micropattern, comprising a first metal layer. The method further comprises producing on a second element a second micropattern, comprising a second metal layer. The method further comprises applying ... 12/28/06 - 20060292823 - Method and apparatus for bonding wafers Embodiments of a method and apparatus for bonding wafers are disclosed. The bonded wafers may include self-passivating interconnects. Other embodiments are described and claimed. ... 12/28/06 - 20060292822 - Method for producing dislocation-free strained crystalline films A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon nitride layer. One of the substrates is ... 12/21/06 - 20060286768 - Method of supporting microelectronic wafer during backside processing A method of supporting a microelectronic wafer during backside processing. The method comprises: selecting a rigid carrier, an adhesive, and a radiation source to emit radiation at a predetermined wavelength range; forming a wafer-carrier stack by providing the adhesive between the wafer and the carrier and curing the adhesive to ... 12/21/06 - 20060286767 - Novel thinning process for 3 - dimensional integration via wafer bonding First and second semiconductor wafers are bonded together, with at least one of the wafers having a first layer of silicon, an intermediate oxide layer and a second layer of silicon. The first silicon layer is initially mechanically reduced by around 80% to 90% of its thickness. The remaining silicon ... 12/14/06 - 20060281280 - Method for producing bonded wafer A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at ... 12/07/06 - 20060276007 - Manufacturing method of thin film device substrate Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an ... 12/07/06 - 20060276006 - Method of segmenting a wafer A method of segmenting a wafer. A device wafer is provided, and a medium layer is formed on the upper surface of the device wafer. Then, a carrier wafer is provided, and the medium layer is mounted on the surface of the carrier wafer. Subsequently, a segment process is performed ... 12/07/06 - 20060276005 - Method of segmenting a wafer First, a device wafer having a substrate layer and a device layer is provided. Then, a first mask pattern is utilized to remove the device layer uncovered by the first mask pattern. Subsequently, a medium layer is formed on the surface of the device wafer, and the medium layer is ... 12/07/06 - 20060276004 - Method of fabricating a substrate for a planar, double-gated, transistor process A semiconductor fabrication process includes forming a sacrificial layer on a substrate of a donor wafer and implanting hydrogen ions into the substrate through the sacrificial layer to create a stress layer in the substrate. After forming the stress layer, multiple layer stacks are formed on the donor wafer substrate ... 12/07/06 - 20060276003 - Wafer with diamond layer A method of manufacturing a wafer using a support substrate of a crystalline material. On the surface of the support substrate, a layer of a diamond is grown to form a first wafer in combination with the support substrate. A further substrate is bonded to the surface of the diamond ... 11/30/06 - 20060270189 - Manufacturing method of semiconductor device including peeling step and semiconductor device using the same To simplify a peeling step in a method for manufacturing a semiconductor device including the peeling step. A first layer having a metal film is formed over a substrate; a second layer having a transistor is formed over the first layer having the metal film; a resin material is applied ... 11/30/06 - 20060270188 - Device transferring system, device transferring method, and display manufacturing method A device transferring system includes a first substrate support portion on which to mount a first substrate, a second substrate support portion for supporting a second substrate opposed to the first substrate, a swinging unit for regulating the position of the first substrate support portion so that a device on ... 11/30/06 - 20060270187 - Transfer method with a treatment of a surface to be bonded A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with ... 11/23/06 - 20060264004 - Method of detachable direct bonding at low temperatures A method for detachable bonding that forms an amorphous silicon layer, or a silicon oxide layer with a high hydrogen content, on an element such as a carrier substrate. A second element, such as a substrate, is bonded to the amorphous silicon layer or silicon oxide layer, and the second ... 11/16/06 - 20060258120 - Electrical/optical integration scheme using direct copper bonding An electro-optic semiconductor package and fabrication method provides enhanced performance. An integrated circuit (IC) having one or more IC contact pads is provided, where the IC contact pads are connected to an IC on the IC wafer. An intermediate wafer having one or more intermediate contact pads is provided, where ... 11/09/06 - 20060252230 - Method of fabricating wafer level package A method of fabricating wafer level package is provided. First, a wafer having a front and a rear surfaces is provided. Several fosses are then formed on the front surface of the wafer. Next, an insulative layer is formed on a surface of each fosse; a conductive layer is then ... 11/09/06 - 20060252229 - Integrated circuit on high performance chip A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two ... 11/02/06 - 20060246686 - Multiple etch-stop layer deposition scheme and materials Described are methods and structures for mitigating the effects of mechanical stresses placed on the layers of semiconductor devices, and specifically disclosed are methods and structures for mitigating the diminished chemical bonds between etch-stop layers and other semiconductor device layers. The disclosed methods and structures use different structures and/or processes ... 10/26/06 - 20060240645 - Method and system for source switching and in-situ plasma bonding A system for in-situ plasma treatment. The system has a processing chamber, e.g., plasma chamber. The system has a first susceptor coupled within the chamber and a second susceptor facing the first susceptor and being within the chamber. The system has one or more power sources. Preferably, a first power ... 10/26/06 - 20060240644 - Substrate with determinate thermal expansion coefficient A composite support designed to successfully receive a transfer layer made of a crystalline material so that the assembly forms an epitaxy substrate, with the support having a longitudinal plane of symmetry parallel to its principal surfaces and a plurality of layers. The support includes a central first layer having ... 10/26/06 - 20060240643 - Method for producing a polymer structure on a substrate surface A method for producing a polymer structure on a patterning region of a substrate surface includes the steps of depositing an adhesion layer having a first polymer material onto the substrate surface, patterning the adhesion layer such that the first polymer material of the adhesion layer is removed in a ... 10/26/06 - 20060240642 - Method of bonding two wafers of semiconductor materials The invention relates to a method of bonding together two wafers made of materials selected from semiconductor materials by providing two wafers each having a surface that is suitable for molecular bonding; and conducting plasma activation of at least one surface of one of the wafers by directing plasma species ... 10/26/06 - 20060240641 - Apparatus and method for making circuitized substrates in a continuous manner Apparatus and method for making circuitized substrates using a continuous roll format in which layers of conductor and dielectric are fed into the apparatus, bonded, and passed on to other nearby work stations in which various processes such as hole formation, circuitization and, finally, segmentation occur. The resulting substrates can ... 10/26/06 - 20060240640 - Isostatic pressure assisted wafer bonding method In the invention, wafers are initially weakly bonded. The weak bond is sufficient to impede penetration of an isostatic pressure transmitting media, e.g., a gas or liquid, into any region between the wafers. The weak bond also permits handling. Weak bonds are strengthened, or new bonds formed, by heating and ... 10/19/06 - 20060234473 - Thin passivation layer on 3d devices Embodiments of the invention include a device with stacked substrates. Conducting interconnecting structures of one substrate are bonded to conducting interconnecting structures of another substrate. A passivating layer may be on the conducting interconnecting structures between the substrates and may be formed by an atomic layer deposition process or a ... 10/19/06 - 20060234472 - Method and device for pre-treating surfaces of substrates to be bonded The present invention provides a process and a device for treating the surfaces or bonding surfaces of substrates before bonding the substrates. In accordance with the invention, the surfaces of substrates to be bonded are treated with an atmospheric plasma before bonding. The surfaces of the substrates can thus be ... 09/28/06 - 20060216908 - Silicon parts joined by a silicon layer preferably plasma sprayed A method of joining two silicon members and the bonded assembly in which the members are assembled to place them into alignment across a seam. Silicon derived from silicon powder is plasma sprayed across the seam and forms a silicon coating that bonds to the silicon members on each side ... 09/28/06 - 20060216907 - Method of fabricating a semiconductor hetero-structure A method of fabricating a structure that includes at least one semiconductor material for applications in microelectronics, optoelectronics or optics. The method includes transferring, onto a support made of a first material, a thin monocrystalline layer made of a second material that differs from the first material, and performing a ... 09/21/06 - 20060211218 - Baffle wafers and randomly oriented polycrystalline silicon used therefor Baffle wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. An all-silicon hot zone of a thermal furnace may include ... 09/21/06 - 20060211217 - Methods for making large dimension, flexible piezoelectric ceramic tapes A method for producing a detection/test tape includes depositing a material onto a surface of at least one first substrate to form a plurality of element structures. Electrodes are deposited on a surface of each of the plurality of element structures, and the element structures are bonded to a second ... 09/14/06 - 20060205178 - Creation of high mobility channels in thin-body soi devices A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a ... 09/14/06 - 20060205177 - Stray field shielding structure for semiconductors A stray field shielding structure for die attaching onto a magnetic random access memory chip or to other chips to prevent loss of memory due to magnetic fields or radiation is made by a method which provides a thick layer of magnetic material which is precise in its dimensions and ... 09/14/06 - 20060205176 - Method for producing a component, body for producing a component of this type and component produced according to said method The invention relates to a method for producing a component, comprising a body (1), to which pressure-sensitive adhesive is applied, at least in sections. To produce the component (10, 20, 30), a pressure-sensitive adhesive base (6) is applied to the body (1). Said applied pressure-adhesive base (6) is at least ... 09/07/06 - 20060199353 - Wafer bonding of thinned electronic materials and circuits to high performance substrate A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a ... 08/31/06 - 20060194414 - Low temperature fusion bonding with high surface energy using a wet chemical treatment Described is a wet chemical surface treatment involving NH4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO2) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/m2 of the bonded interface have been ... 08/31/06 - 20060194413 - Method of bonding substrates A method of bonding a first substrate to a second substrate is provided. The method comprises the steps of: (a) providing a first substrate having a plurality of etched trenches defined in a first bonding surface; (b) providing a second substrate having a second bonding surface; and (c) bonding the ... 08/31/06 - 20060194412 - Method and device for sticking tape Tapes are attached to a long support film, and the support film is attached to frame member at positions where the tape to be stuck to an adherend such as a semiconductor wafer, is included in a frame of a frame member. The support film is pressed to stick the ... 08/24/06 - 20060189094 - Method for integrating an electronic component or similar into a substrate A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete back-etching of an area of the substrate from the back of the substrate to form a cavity; formation of ... 08/24/06 - 20060189093 - Adhesive with differential optical properties and its application for substrate processing An adhesive adapted with particular optical properties, and its use to couple a substrate to a substrate holder during substrate processing are disclosed. After processing the substrate, the optical properties of the adhesive may be exploited to locate and/or remove adhesive residue that may be present on the substrate. ... 08/10/06 - 20060177991 - Soi wafer production method By using, in the so-called Smart Cut process comprising the steps of bonding an ion-implanted active layer wafer to a base wafer and later splitting off the base wafer to produce a SOI wafer, a wafer doped with C in a single crystal ingot growing process (desirably to a carbon ... 08/03/06 - 20060172507 - Method and system for 3d aligment in wafer scale integration A substrate bonding system has a first and a second substrate table for holding a first substrate and a second substrate, respectively, and a controller. The first substrate includes a first device having first contact pads and the second substrate a second device having second contact pads. The wafer bonding ... 08/03/06 - 20060172506 - Process for producing a semiconductor chip In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, ... 08/03/06 - 20060172505 - Structure and method of integrating compound and elemental semiconductors for high-performace cmos A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The first substrate is wafer bonded onto a monocrystalline Si substrate, such ... 07/27/06 - 20060166461 - Method of producing mixed substrates and structure thus obtained The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer ... 07/20/06 - 20060160328 - Treatment of a removed layer of silicon-germanium The invention relates to a method of forming a structure comprising a removed layer taken from a donor wafer, the donor wafer including a first layer formed of Si1-xGex and a second layer of Si1-yGey on the first layer, where x and y, respectively, are in the range of 0 ... 07/20/06 - 20060160327 - Soi wafer with cooling channels and a method of manufacture thereof A method (100) of forming a silicon-on-insulator (SOI) wafer includes forming one or more channels in a top surface of a first wafer (104), and forming an insulator layer on a second wafer (106). The second wafer is treated (108) to generate a structural weakness therein, and the first and ... 07/13/06 - 20060154444 - Method of forming wiring A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam ... 07/13/06 - 20060154443 - Bonding system having stress control An approach where items of different temperatures are bonded to each other such that upon cooling down they contract in size resulting in zero residual stress between the bonded items at an ambient temperature. If materials of the bonded items have different thermal expansion coefficients and the items are put ... 07/13/06 - 20060154442 - Quasi-hydrophobic si-si wafer bonding using hydrophilic si surfaces and dissolution of interfacial bonding oxide The present invention provides a method for removing or reducing the thickness of ultrathin interfacial oxides remaining at Si—Si interfaces after silicon wafer bonding. In particular, the invention provides a method for removing ultrathin interfacial oxides remaining after hydrophilic Si—Si wafer bonding to create bonded Si—Si interfaces having properties comparable ... 06/29/06 - 20060141749 - Adhesive of folder package A package includes a flexible substrate with a first region and a second region, an encapsulated die supported by the first region, and a conformable fold adhesive introduced between the encapsulated die and the flexible substrate. The second region of the flexible substrate is folded over the surface of the ... 06/29/06 - 20060141748 - Thermal treament of a semiconductor layer A method for thermally treating a silicon germanium semiconductor layer from a donor wafer is described. An embodiment of the technique includes co-implanting atomic species into a first surface of the donor wafer to form a zone of weakness at a predetermined depth that defines the thickness of a transfer ... 06/29/06 - 20060141747 - Controlled cleaving process A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define ... 06/29/06 - 20060141746 - Methods for forming semiconductor structures The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, ... 06/29/06 - 20060141745 - Method and system for wafer bonding of structured substrates for electro-mechanical devices A method for forming a composite substrate structure. The method includes providing a first substrate, the first substrate having a surface region and a backside region, providing a handling substrate, the handling substrate having a bonding surface and a handling surface, and activating at least one of the surface region ... 06/29/06 - 20060141744 - System and method of forming a bonded substrate and a bonded substrate product The invention provides a method of forming a bonded substrate that includes providing a first substrate having a first substrate shape and at least one first alignment mark positioned at a first surface side. A second substrate is providing having a second substrate shape. The second substrate is oriented relative ... 06/29/06 - 20060141743 - Method and system for 3d alignment in wafer scale integration A substrate bonding system has a first and a second substrate table for holding a first substrate and a second substrate, respectively, and a controller. The first substrate includes a first device having first contact pads and the second substrate a second device having second contact pads. The wafer bonding ... 06/29/06 - 20060141742 - Method of producing a complex structure by assembling stressed structures The invention relates to a method of producing a complex microelectronic structure, in which two basic microelectronic structures (1, 3) are assembled at the two respective connecting faces (3) thereof. The invention is characterised in that, before assembly, a difference is created in the tangential stress state between the two ... 06/15/06 - 20060128117 - Forming structures that include a relaxed or pseudo-relaxed layer on a substrate A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity ... 06/15/06 - 20060128116 - Manufacturing method of silicon on insulator wafer Provided is a method of manufacturing a silicon on insulator (SOI) substrate. The method includes the steps of: (a) forming a buried oxidation layer to a predetermined depth of a first wafer and forming an oxidation layer on the first wafer; (b) forming a buried hydrogen layer in the first ... 06/08/06 - 20060121692 - Method for manufacturing soi wafer This method for manufacturing an SOI wafer includes: a step of subjecting a mirror-polished active layer wafer to a rapid thermal annealing treatment; a step of forming insulating films in a front surface and a rear surface of the active layer wafer; a step of bonding the active layer wafer ... 06/08/06 - 20060121691 - Method of manufacturing single crystal si film Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of ... 06/08/06 - 20060121690 - Three-dimensional device fabrication method A method is described for fabricating a three-dimensional integrated device including a plurality of vertically stacked and interconnected wafers. Wafers (1, 2, 3) are bonded together using bonding layers (26, 36) of thermoplastic material such as polyimide; electrical connections are realized by vias (12, 22) in the wafers connected to ... 06/01/06 - 20060115958 - Method and apparatus for forming buried oxygen precipitate layers in multi-layer wafers A method of forming a SOI wafer obtains an intermediate apparatus having a first wafer, a second wafer, and an insulator material bonding the first and second wafers together. The first wafer has an oxygen precipitate concentration sufficient for gettering. The method reduces the profile of at least a portion ... 05/25/06 - 20060110893 - Glass-type planar substrate, use thereof, and method for the production thereof The invented method is distinguished by a combination of the following method steps: provision of a semiconductor planar substrate composed of a semiconductor material, reduction of the thickness of the semiconductor planar substrate inside at least one surface region of the semiconductor planar substrate in order to form a raised ... 05/18/06 - 20060105542 - Method for fabricating and separating semiconductor devices A method of fabricating and separating semiconductor structures comprises the steps of: (a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices are attached to one another by at least one connective ... 05/11/06 - 20060099773 - Fabrication of a low defect germanium film by direct wafer bonding A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing ... 05/11/06 - 20060099772 - Method with mechanically strained silicon for enhancing speed of integrated circuits of devices A method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices is disclosed. The method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices includes the following steps: (a) providing a substrate, (b) fixing the substrate, (c) applying a stress ... 05/04/06 - 20060094206 - Packaging and manufacturing of an integrated circuit Apparatus, packaging, and methods of manufacture of an integrated circuit are provided. The integrated circuit includes a component of a first type fabricated on a first substrate containing a first material, and a component of a second type fabricated on a second substrate containing a second material. The first material ... 04/27/06 - 20060088978 - Method of making a semiconductor structure for high power semiconductor devices A substrate arrangement for high power semiconductor devices includes a SiC wafer having a Si layer deposited on a surface of the SiC wafer. An SOI structure having a first layer of Si, an intermediate layer of SiO2 and a third layer of Si, has its third layer of Si ... 04/20/06 - 20060084238 - Method for bonding wafers A first wafer is provided, and a photosensitive masking-and-bonding pattern is formed on the surface of the first wafer. Then, an etching process using the photosensitive masking-and-bonding pattern as a hard mask is performed to form a wafer pattern on the surface of the first wafer. Finally, the first wafer ... 04/13/06 - 20060079069 - Silicon wafer laser processing method and laser beam processing machine A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm. ... 04/06/06 - 20060073673 - Ammonium hydroxide treatments for semiconductor substrates Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen ... 03/30/06 - 20060068563 - Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates According to various exemplary embodiments of this invention, a method of producing a semiconductor structure is provided that includes providing a layered structure on a first substrate, the layered structure including a silicon layer that is provided over a first dielectric layer, a first dielectric layer that is provided over ... 03/23/06 - 20060063353 - Method of layer transfer comprising sequential implantations of atomic species A method of manufacturing a crystalline wafer that includes implanting first atomic species in a donor substrate to form a region of weakness at a first depth therein and configured to facilitate detachment of a first layer of the donor substrate from a remaining portion of the donor substrate. The ... 03/23/06 - 20060063352 - Process for manufacturing wafers of semiconductor material by layer transfer A process manufactures a wafer using semiconductor processing techniques. A bonding layer is formed on a top surface of a first wafer; a deep trench is dug in a substrate of semiconductor material belonging to a second wafer. A top layer of semiconductor material is formed on top of the ... 03/23/06 - 20060063351 - Method of making a microelectronic and/or optoelectronic circuitry sheet A circuitry sheet (322) comprising an electronic device layer stack (304) containing electronic devices, e.g., thin-film transistors, or portions thereof, formed by removing material from both sides of the device layer stack. The circuitry sheet may be made by an electronic/optoelectronic device manufacturing method (200) that includes the steps of ... 03/16/06 - 20060057818 - Package structure and method for optoelectric products An optoelectric product is packaged according to the technology of wafer level chip scale package. A transparent wafer with multitudes of cavities is bonded onto a device wafer with a plurality of protruding patterns during packaging process. Each slot may receive the protruding patterns corresponding to two adjacent chip units ... 03/16/06 - 20060057817 - Semiconductor device, its manufacture method and electronic component unit A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the ... 03/09/06 - 20060051934 - Method for manufacturing semiconductor device An insulating film is formed as a pore-wall protective film (103) on pore walls in a porous layer (102) by the use of a mixed gas plasma of a noble gas and an insulating film forming gas generated by microwave excitation. As a result, the pore-wall protective film can have ... 03/02/06 - 20060046431 - Layered semiconductor wafer with low warp and bow, and process for producing it Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semiconductor wafer has a ... 03/02/06 - 20060046430 - Batch process and device for forming spacer structures for packaging optical reflection devices A method for forming a standoff structure for packaging devices, e.g., optical devices, integrated circuit devices. The method includes providing a substrate, e.g., silicon wafer. The substrate includes a first surface region, a second surface region, and a thickness defined between the first surface region and the second surface region. ... 02/23/06 - 20060040468 - Method for transferring a semiconductor body from a growth substrate to a support material A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of ... 02/23/06 - 20060040467 - Process and apparatus for thinning a semiconductor workpiece The present invention provides system and apparatus for use in processing wafers. The new system and apparatus allows for the production of thinner wafers that at same time remain strong. As a result, the wafers produced by the present process are less susceptible to breaking. The unique system also offers ... 02/16/06 - 20060035438 - Method and resulting structure for manufacturing semiconductor substrates A method of manufacturing bonded substrates. The method includes providing a metallic substrate. The metal substrate has a predetermined thickness. The method also includes bonding a first thickness of compound semiconductor material overlying the metallic substrate and reducing a thickness of the first thickness of compound semiconductor material to a ... 02/09/06 - 20060030123 - Method for bonding a pair of silicon wafers together, and a semiconductor wafer A method for bonding a pair of silicon wafers (2, 3) together to form a semiconductor wafer (1) wherein an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2, 3). The method ... 02/09/06 - 20060030122 - Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring the transferred layer to the transfer member and reusing the substrate for another transfer. ... 02/09/06 - 20060030121 - Epitaxial semiconductor layer and method A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor materials. One advantageous application of such an interface includes an electrical-optical communication structure. Methods ... 02/09/06 - 20060030120 - Method of performing double-sided processes upon a wafer First, a wafer having a first surface and a second surface is provided. Then, a first heat sensitive tape is utilized to bond the second surface of the wafer to a first carrier, and at least a first semiconductor process is performed upon the first surface of the wafer. Subsequently, ... 02/02/06 - 20060024918 - Semiconductor memory device and manufacturing method of the same In this semiconductor memory device, a potential clamping region having no insulation layer formed therein is provided in an insulation layer. More specifically, the potential clamping region is formed under a body portion at a position near a first impurity region, and extends to a first semiconductor layer. A body ... 02/02/06 - 20060024917 - Method and system for fabricating strained layers for the manufacture of integrated circuits A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing ... 02/02/06 - 20060024916 - Modification of electrical properties for semiconductor wafers A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer is located adjacent to the second semiconductor wafer. A relationship is provided between a ... 02/02/06 - 20060024915 - Method for manufacturing soi wafer The present invention provide a method for manufacturing an SOI wafer which suppresses voids from being generated in an SOI wafer, especially, in an outer peripheral portion thereof to achieve high productivity. According to the present invention, in a method for manufacturing an SOI wafer in which an insulating layer ... 01/26/06 - 20060019463 - Die attaching method of semiconductor chip using warpage prevention material A die attaching method of a semiconductor chip simplifies the process of fabricating a package from the chip while preventing the chip form being damaged even when the chip is very thin. Warpage prevention material is adhered to a top surface of a wafer having a plurality of chips formed ... 01/19/06 - 20060014363 - Thermal treatment of a semiconductor layer A method for forming a structure that includes a layer that is removed from a donor wafer that has a first layer made of a semiconductor material containing germanium. The method includes the steps of forming a weakness zone in the thickness of the first layer; bonding the donor wafer ... 01/12/06 - 20060009007 - Integrated circuit having a device wafer with a diffused doped backside layer Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device handle, in the handle wafer, in the bond oxide or ... 01/12/06 - 20060009006 - Method for wafer bonding (al, in, ga)n and zn(s, se) for optoelectronic applications A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with ... 01/05/06 - 20060003549 - Assemblies including semiconductor substrates of reduced thickness and support structures therefor A fabrication substrate for use in fabricating integrated circuits and other electronic devices includes a substrate that comprises semiconductor material, as well as a support structure on an active surface of the substrate. The support structure is located at or adjacent to an entire outer peripheral edge of the substrate. ... 01/05/06 - 20060003548 - Highly compliant plate for wafer bonding The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, ... 01/05/06 - 20060003547 - Highly compliant plate for wafer bonding The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, ... 12/22/05 - 20050282355 - High density bonding of electrical devices A method of thermocompressive bonding of one or more electrical devices using individual heating elements and a resilient member to force the individual heating elements into compressive engagement with the electrical devices is provided. The individual heating elements may be Curie-point heating elements or conventional resistive heating elements. A method ... 12/15/05 - 20050277267 - Method for manufacturing a compound material wafer The invention relates to a method for manufacturing a compound material wafer. The technique includes forming a weakened zone in a source substrate, attaching the source substrate to a handle substrate to form a source-handle assembly, and thermally annealing the source-handle assembly to further weaken the weakened zone. The method ... 12/15/05 - 20050277266 - Process for interfacial adhesion in laminate structures through patterned roughing of a surface The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Roughness may including any disturbance of an otherwise generally smooth surface, such as grooves, ... 12/01/05 - 20050266658 - Glass-based soi structures Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic ... 12/01/05 - 20050266657 - Substrate manufacturing method A first substrate which has a semiconductor and an insulating layer formed on the surface of the semiconductor is prepared. The periphery of the insulating layer is selectively removed to expose the semiconductor. The first substrate on the insulating layer side is bonded to a second substrate to form a ... 12/01/05 - 20050266656 - Method for producing a multilayer storage media An inventive method for producing a disc shaped workpiece comprises the steps of producing a first and a second disc-shaped substrate, applying a first adhesive at least partially onto one of the flat sides of said first substrate, curing said first adhesive, applying a second adhesive at least partially onto ... 11/24/05 - 20050260828 - Bonding method, bonding apparatus and sealing means A silicon substrate in which MEMS devices are formed and a quartz substrate used to seal the silicon substrate are tentatively bonded to each other. While the silicon substrate and quartz substrate are being pressed using a pressure jig, light having a wavelength that is absorbed into the silicon substrate ... 11/17/05 - 20050255672 - Method and resulting structure for manufacturing semiconductor substrates A semiconductor wafer composite is used as a basis for fabricating semiconductor chips, especially compound semiconductor devices. The semiconductor wafer composite advantageously comprises a metallic substrate 210 and multiple semiconductor tiles 220 bonded to the surface of the metallic substrate 210. The semiconductor wafer composite is effectively used as a ... 11/17/05 - 20050255671 - Process for producing silicon on insulator structure having intrinsic gettering by ion implantation The present invention is directed to a process for producing a silicon on insulator (SOI) structure having intrinsic gettering, wherein a silicon substrate is subjected to an ideal precipitating wafer heat treatment which enables the substrate, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process to ... 11/17/05 - 20050255670 - Glass-based soi structures A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a ... 11/03/05 - 20050245048 - Soi wafer and method for producing it An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the ... 11/03/05 - 20050245047 - Method and a device for bonding two plate-shaped objects A method for bonding two plate-shaped objects (5) with an adhesive which is cured by ultraviolet light irradiation and by heating. The two plate-shaped objects (5) with the adhesive in between are transported into a cure chamber (11) comprising an ultraviolet lamp (12) and a heating element (13). A moveable ... 10/27/05 - 20050239267 - Substrate manufacturing method A substrate manufacturing method includes steps of preparing a bonded substrate stack formed by bonding a second substrate to a first substrate having an insulator at least on a surface, forming a gettering layer to capture a metal contamination on the surface of the bonded substrate stack to form a ... 10/20/05 - 20050233544 - Method of smoothing the outline of a useful layer of material transferred onto a support substrate A method of providing a regular outline in a useful layer of material that is transferred from a source substrate onto a support substrate during the fabrication of a composite substrate for subsequent use in electronics, optics, or optoelectronics. The technique includes providing a shoulder on a front face of ... 10/20/05 - 20050233543 - Method of fabricating microelectromechanical system structures A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stacking of the components is determined to establish interfaces between the adjacent ... 10/13/05 - 20050227454 - Method for manufacturing silicon-on-insulator wafer A method for manufacturing a SOI wafer includes a step of forming a SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and also includes a step of introducing hydrogen into the interface between the insulating layer and the ... 10/06/05 - 20050221582 - Bonding tool for mounting semiconductor chips A vacuum bonding tool for pick-and-place and bonding semiconductor chips onto a substrate or onto a previously mounted die to form a die stack includes a shank and a suction part. The shank has a vacuum conduit extending from a first end to a second end of the shank. The ... 10/06/05 - 20050221581 - Wafer stacking using copper structures of substantially uniform height Wafer stacking employing substantially uniform copper structures is described herein. ... 09/29/05 - 20050215029 - Method for fixing wafer used in manufacturing procedure A method for fixing a wafer used in a manufacturing procedure is provided. The method includes steps of a) providing the wafer, a handling carrier, and a thermal release tape, wherein the wafer has a first and a second surfaces; b) adhering the thermal release tape between the first surface ... 09/29/05 - 20050215028 - Method of wafer/substrate bonding A method of bonding two components by depositing an amorphous and non-hydrogenated intermediate layer (2) on one of the components (1,4) and arranging the components (1,4) in spaced relationship with the intermediate layer (2) therebetween. The method further comprises heating one or both of the components (1,4) before bringing the ... 09/08/05 - 20050196937 - Methods for forming a semiconductor structure Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species through the free surface of the second layer to form ... 09/08/05 - 20050196936 - Methods for thermally treating a semiconductor layer A method for thermally treating a semiconductor layer is described. An embodiment of the technique includes implanting atomic species into a first surface of a donor wafer to form a zone of weakness at a predetermined depth that defines the thickness of a transfer layer, bonding the first surface of ... 09/01/05 - 20050191824 - Methods for producing a multilayer semiconductor structure Methods for producing a multilayer semiconductor structure are described. In an embodiment, the method includes providing a support substrate made of a first semiconductor material having a first lattice parameter, and depositing a layer of a second semiconductor material having a second lattice parameter that is substantially different than the ... 08/25/05 - 20050186757 - Method for lift off gan pseudomask epitaxy layer using wafer bonding way The epitaxial lateral overgrowth (ELOG) GaN obtains the dangling structure by using wet etching and the transferred substrate to separate from the GaN epitaxy layer by using stress concentration of thermal expansion coefficient of the transferred substrate. It is useful to separate of the GaN epitaxy layer and transferred substrate ... 08/18/05 - 20050181579 - Device and method for bonding wafers The invention relates to a device and a corresponding method for bonding wafers along their corresponding surfaces. ... 08/04/05 - 20050170610 - Low defect density, ideal oxygen precipitating silicon The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. ... 08/04/05 - 20050170609 - Conductive bond for through-wafer interconnect A conductive bond for through-wafer interconnect is produced by forming an electrode through a first wafer from a component on a front side of the first wafer to a back side of the first wafer, forming a first electrically conductive interface in contact with an exposed portion of the electrode ... 07/28/05 - 20050164470 - Method for fabricating a semiconductor device by transferring a layer to a support with curvature The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded ... 07/14/05 - 20050153523 - Method for compensating for cte mismatch using phase change lead-free super plastic solders Lead-free solders comprising 85-96% tin (Sn) and 4-15% Indium (In) by weight percentage (wt. %) and exemplary uses of the same are disclosed. The Sn—In solder undergoes a martensitic phase change when it is cooled from a reflow temperature to room temperature. As a result, residual stresses that would normally ... 07/14/05 - 20050153522 - Wafer level chip stack method Provided is a method by which differently-sized chips may be stacked at the wafer level. The wafer level chip stack method utilizes first and second wafer assemblies that support first and second wafers on adhesive tapes. One or both of the supported wafers may be sawed or otherwise divided to ... 07/07/05 - 20050148156 - Method of removing unnecessary matter from semiconductor wafer, and apparatus using the same In an unnecessary matter removal method of joining a separation tape onto a semiconductor wafer and, then, separating the separation tape from the semiconductor wafer, thereby separating an unnecessary matter on the semiconductor wafer together with the separation tape, the separation tape is separated from the semiconductor wafer in such ... 06/30/05 - 20050142812 - Manufacturing method of structural body, droplet discharging head and droplet discharging device Provided is technology capable of avoiding complex processes and high costs while securing the protection of the functional unit upon forming a device including a glass substrate. A manufacturing method of a structural body structured with a bonding body formed from a glass substrate and a semiconductor substrate, including a ... 06/23/05 - 20050136620 - Maleimide compounds in liquid form In accordance with the present invention, there are provided novel thermosetting resin compositions which do not require solvent to provide a system having suitable viscosity for convenient handling. Invention compositions have the benefit of undergoing rapid cure. The resulting thermosets are stable to elevated temperatures, are highly flexible, have low ... 06/16/05 - 20050130389 - Semiconductor device and manufacturing method thereof A semiconductor device typified by a wireless tag, which has improved mechanical strength, can be formed by a more simple process at a low cost and prevent radio waves from being shielded, and a manufacturing method of the semiconductor device. According to the invention, a wireless tag includes a thin ... 06/09/05 - 20050124137 - Semiconductor substrate and manufacturing method therefor The first step of implanting ions in the first substrate which has a gallium arsenide layer on a germanium member and forming an ion-implanted layer in the first substrate, the second step of bonding the first substrate to the second substrate to form a bonded substrate stack, and the third ... 06/09/05 - 20050124136 - Method for mass production of a plurality of magnetic sensors The present invention relates to a method for producing in large numbers a multiplicity of magnetic sensors produced on a semiconductor substrate, these sensors comprising at least one magnetic core produced in an amorphous magnetic material, characterised in that, after integration of the electronic circuits associated with the magnetic sensors, ... 06/02/05 - 20050118788 - Mask, method for manufacturing thereof, method for manufacturing organic electroluminescent device, and organic electroluminescent device A mask is provided for forming a desired high-precision layer pattern on a glass substrate or the like used as a layer-formation object material. The mask includes a first substrate having a first aperture and a second substrate having a plurality of second apertures serving as mask apertures, wherein the ... 06/02/05 - 20050118787 - System to form a layering of electronically-interactive material A machine controlled by a computer for depositing a liquefied electronically-interactive material on a sheet or support card, which includes: a base (1) to support the mobile bed (2) which is moved longitudinally (Y) by means of a worm screw (20) whose movement is controlled by a computer, and for ... ### FreshPatents.com Support - Terms & Conditions |