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Semiconductor Device Manufacturing: Process > Formation Of Electrically Isolated Lateral Semiconductive Structure > Recessed Oxide By Localized Oxidation (i.e., Locos) > Dopant Addition > Implanting Through Recessed Oxide Implanting Through Recessed OxideImplanting Through Recessed Oxide patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.02/23/06 - 20060040466 - Methods of forming integrated circuits, and dram circuitry memory cells This invention includes methods of forming integrated circuits, and includes DRAM circuitry memory cells. In one implementation, a method of forming an integrated circuit includes forming a trench isolation mask over a semiconductor substrate. The trench isolation mask defines an active area region and a trench isolation region. An ion ... 11/03/05 - 20050245046 - Semiconductor substrate, semiconductor device, and manufacturing methods for them The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop ... ### FreshPatents.com Support |